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Ch. 2 Lecture Slides For Chenming Hu Book: Modern Semiconductor Devices For ICs
Ch. 2 Lecture Slides For Chenming Hu Book: Modern Semiconductor Devices For ICs
1
2
3kT
meff
3 1.38 10 23 JK 1 300K
0.26 9.1 10 31 kg
Slide 2-1
Slide 2-2
Thermoelectric Generator
(from heat to electricity )
and Cooler (from
electricity to refrigeration)
Slide 2-3
2.2 Drift
2.2.1 Electron and Hole Mobilities
Slide 2-4
q mp
mp
q E mp
mp
v nE
q mn
n
mn
Slide 2-5
V/cm
V s
n (cm2/Vs)
p (cm2/Vs)
Si
Ge
GaAs
InAs
1400
3900
8500
30000
470
1900
400
500
Based on the above table alone, which semiconductor and which carriers
(electrons or holes) are attractive for applications in high-speed devices?
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 2-6
Slide 2-7
1
1
3 / 2
T
phonon density carrier thermal velocity T T 1 / 2
= q/m
vth T1/2
Slide 2-8
Electron
Electron
Arsenic
Ion
impurity
3
th
3/ 2
v
T
Na Nd
Na Nd
Slide 2-9
Total Mobility
1600
1
1
1
phonon impurity
1400
Electrons
1
1
1
phonon impurity
1000
-1
-1
M obility (cmV s )
1200
800
600
400
Holes
200
0
1E14
1E15
1E16
1E17
1E18
1E19
1E20
Na +Concenration
Nd (cm-3)
Total Impurity
(atoms cm )
-3
Slide 2-10
10 1 5
Question:
What Nd will make
dn/dT = 0 at room
temperature?
Slide 2-11
Velocity Saturation
When the kinetic energy of a carrier exceeds a critical value, it
generates an optical phonon and loses the kinetic energy.
Therefore, the kinetic energy is capped at large E, and the
velocity does not rise above a saturation velocity, vsat .
Velocity saturation has a deleterious effect on device speed as
shown in Ch. 6.
Slide 2-12
E
unit
area
Jp
Jp = qpv
A/cm2 or C/cm2sec
cm
1.6
A/cm
=
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 2-13
1/ = is resistivity (ohm-cm)
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 2-14
P-type
N-type
RESISTIVITY (
cm)
= 1/
Slide 2-15
Slide 2-16
Slide 2-17
Slide 2-18
dn
qDn
dx
J p ,diffusion
dp
qD p
dx
Slide 2-19
JTOTAL = Jn + Jp
Jn = Jn,drift + Jn,diffusion = qnnE
Jp = Jp,drift + Jp,diffusion = qppE
dn
qDn
dx
dp
qD p
dx
Slide 2-20
Diagram and V, E
0.7eV
Si
(a )
V (x )
0 .7 V
+
N-
N type Si
E(x)= dx q dx q dx
0
(b )
E c(x )
E cE (x)
( )
f x
E f (x)
E v(x )
E v (x)
0 .7 V
+
x
0.7V
(c )
Slide 2-21
E c( x )
n N ce
N n- -ttyy pp ee s es me mi c o inc d ou cn t do ru c t o r
D e c r e a s in g d o n o r c o n c e n t r a ti o n
( Ec E f ) / kT
dn
N ( E E ) / kT dEc
ce c f
dx
kT
dx
n dEc
Ec(x)
kT dx
Ef
Ev(x)
n
qE
kT
Slide 2-22
qE
dx
kT
dn
0 at equilibrium.
dx
qD
0 qn nE qn n E
kT
J n qn nE qDn
kT
Dn
n
q
kT
p
Similarly, Dp
q
Slide 2-23
Slide 2-24
n n0 n'
p p0 p '
Slide 2-25
Charge Neutrality
Charge neutrality is satisfied at equilibrium (n=
p= 0).
When a non-zero n is present, an equal p may
be assumed to be present to maintain charge
equality and vice-versa.
If charge neutrality is not satisfied, the net charge
will attract or repel the (majority) carriers through
the drift current until neutrality is restored.
n' p'
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 2-26
Recombination Lifetime
Assume light generates n and p. If the light is
suddenly turned off, n and p decay with time
until they become zero.
The process of decay is called recombination.
The time constant of decay is the recombination
time or carrier lifetime, .
Recombination is natures way of restoring
equilibrium (n= p= 0).
Slide 2-27
Recombination Lifetime
ranges from 1ns to 1ms in Si and depends on
the density of metal impurities (contaminants)
such as Au and Pt.
These deep traps capture electrons and holes to
facilitate recombination and are called
recombination centers.
Ec
Direct
Recombination
is unfavorable in
silicon
Recombination
centers
Ev
Slide 2-28
Trap
dn
n
dt
n p
dn
n
p dp
dt
dt
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 2-30
EXAMPLE: Photoconductors
A bar of Si is doped with boron at 1015cm-3. It is
exposed to light such that electron-hole pairs are
generated throughout the volume of the bar at the
rate of 1020/scm3. The recombination lifetime is
10s. What are (a) p0 , (b) n0 , (c) p, (d) n, (e) p ,
(f) n, and (g) the np product?
Slide 2-31
EXAMPLE: Photoconductors
Solution:
(a) What is p0?
p0 = Na = 1015 cm-3
(b) What is n0 ?
n0 = ni2/p0 = 105 cm-3
(c) What is p?
In steady-state, the rate of generation is equal to the
rate of recombination.
1020/s-cm3 = p/
p= 1020/s-cm3 10-5s = 1015 cm-3
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 2-32
EXAMPLE: Photoconductors
(d) What is n?
n= p= 1015 cm-3
(e) What is p?
p = p0 + p= 1015cm-3 + 1015cm-3 = 21015cm-3
(f) What is n?
n = n0 + n= 105cm-3 + 1015cm-3 ~ 1015cm-3 since n0 << n
(g) What is np?
np ~ 21015cm-3 1015cm-3 = 21030 cm-6 >> ni2 = 1020 cm-6.
The np product can be very different from ni2.
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 2-33
Slide 2-34
n Nce
( Ec E f ) / kT
p Nve
( E f Ev ) / kT
p Nve
( E fp Ev ) / kT
Even when electrons and holes are not at equilibrium, within each
group the carriers can be at equilibrium. Electrons are closely
linked to other electrons but only loosely to holes.
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 2-35
Slide 2-36
-3
( Ec E fn ) / kT
EcEfn = kT ln(Nc/1.011017cm-3)
= 26 meV ln(2.81019cm-3/1.011017cm-3)
= 0.15 eV
Efn is nearly identical to Ef because n n0 .
Slide 2-37
-3
( E fp Ev ) / kT
EfpEv = kT ln(Nv/1015cm-3)
= 26 meV ln(1.041019cm-3/1015cm-3)
= 0.24 eV
Ec
Ef
Efn
Efp
Ev
Slide 2-38
dn
dx
dp
qD p
dx
J n ,diffusion qDn
J p ,diffusion
kT
Dn
n
q
kT
Dp
p
q
Slide 2-39
p Nve
fn
( E fp Ev ) / kT
Slide 2-40