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Sep. 2002
G
G
D
S
S
TO-220F
Limit
Unit
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
30
ID
1.5
-Pulsed
IDM
4.5
IS
4.5
PD
29
0.23
W
W/ C
Parameter
Drain Current-Continuous
TJ, TSTG
-65 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
RJC
4.3
C/W
RJA
65
C/W
6-117
CEF02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Condition
Symbol
EAS
Maximum Drain-Source
Avalanche Current
IAS
125
mJ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Gate-Body Leakage
IGSS
VGS(th)
RDS(ON)
VGS =10V, ID = 1A
ID(ON)
gFS
1.2
tD(ON)
VDD = 300V,
ID = 2A,
VGS = 10V
RGEN=18
18
35
ns
18
35
ns
50
90
ns
600
V
25
100 nA
ON CHARACTERISTICS a
Forward Transconductance
2
3.8
5.0
A
S
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tr
tD(OFF)
Fall Time
tf
16
40
ns
Qg
20
25
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
nC
12
nC
CEF02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Condition
Symbol
DYNAMIC CHARACTERISTICS b
Input Capacitance
CISS
Output Capacitance
COSS
CRSS
250
PF
50
PF
30
PF
VSD
1.5
Notes
a.Pulse Test:Pulse Width 300s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
3.0
VGS=10,9,8,7V
2.5
2.0
1.5
VGS=6V
1.0
VGS=5V
0.5
150 C
-55 C
0.1
0
0
10
12
1.VDS=40V
2.Pulse Test
25 C
10
6-119
CEF02N6
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
600
C, Capacitance (pF)
500
400
Ciss
300
200
Coss
100
Crss
0
0
10
15
20
25
2.2
ID=1A
VGS=10V
1.9
1.6
1.3
1.0
0.7
0.4
-100
VDS=VGS
ID=250A
1.10
1.0
0.90
0.80
0.70
25
50
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.30
150
200
1.15
ID=250A
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
25
50
20
10
4
VDS=50V
100
Figure 3. Capacitance
0.60
-50 -25
50
1.20
-50
VGS=0V
0.1
0
0
0.4
0.6
0.8
1.0
1.2
CEF02N6
10
VDS=480V
ID=2A
1m
12
9
3
0
0
12
(O
10
0m
0.1
0.01
24
18
RD
i
)L
10
t
mi
D
15
Tc=25 C
Tj=150C
Single Pulse
1
500 1000
100
10
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
VIN
50%
50%
10%
PULSE WIDTH
r(t),Normalized Effective
Transient Thermal Impedance
2
1
D=0.5
0.1
PDM
0.1
0.05
t1
t2
1. RJC (t)=r (t) * RJC
2. RJC=See Datasheet
3. TJM-TC = P* RJC (t)
4. Duty Cycle, D=t1/t2
0.02
0.01
0.01
0.01
0.1
Single Pulse
10
100
1000
6-121
10000