BVDSS = 600 V

RDS(on) typ 

HFS2N60FS

ID = 2 A

600V N-Channel MOSFET

TO-220F

FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology

1.Gate 2. Drain 3. Source

Very Low Intrinsic Capacitances

Excellent Switching Characteristics
Unrivalled Gate Charge : 6.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : (Typ.) @VGS=10V
100% Avalanche Tested
Single Gauge Package

Absolute Maximum Ratings

Symbol
VDSS

TC=25 unless otherwise specified

Parameter
Drain-Source Voltage

Value

Units

600

Drain Current

Continuous (TC = 25)

2*

Drain Current

Continuous (TC = 100)

1.3 *

IDM

Drain Current

Pulsed

8*

VGS

Gate-Source Voltage

30

EAS

Single Pulsed Avalanche Energy

(Note 2)

110

mJ

IAR

Avalanche Current

(Note 1)

EAR

Repetitive Avalanche Energy

(Note 1)

2.3

mJ

PD

Power Dissipation (TC = 25)

- Derate above 25

23

TJ, TSTG

Operating and Storage Temperature Range

TL

Maximum lead temperature for soldering purposes,

1/8 from case for 5 seconds

ID

(Note 1)

0.18

W/

-55 to +150

300

* Drain current limited by maximum junction temperature

Thermal Resistance Characteristics

Typ.

Max.

RJC

Symbol
Junction-to-Case

Parameter

--

5.5

RJA

Junction-to-Ambient

--

62.5

Units
/W

HFS2N60FS

July 2015

Symbol

Parameter

unless otherwise specified

Test Conditions

Min

Typ

Max

Units

2.0

--

4.0

--

3.6

4.5

VGS = 0 V, ID = 250

600

--

--

VDS = 600 V, VGS = 0 V

--

--

10

VDS = 480 V, TC = 125

--

--

100

VGS = 30 V, VDS = 0 V

--

--

100

--

290

--

--

37

--

--

4.5

--

--

16

--

--

17

--

--

28

--

--

20

--

--

6.5

--

nC

--

1.5

--

nC

--

2.2

--

nC

On Characteristics
VGS
RDS(ON)

Gate Threshold Voltage

VDS = VGS, ID = 250

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 1 A

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate-Body Leakage Current

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

Switching Characteristics
td(on)

Turn-On Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

VDS = 300 V, ID = 2 A,
RG = 25
(Note 4,5)

VDS = 480 V, ID = 2 A,
VGS = 10 V
(Note 4,5)

Gate-Drain Charge

Source-Drain Diode Maximum Ratings and Characteristics

IS

Continuous Source-Drain Diode Forward Current

--

--

ISM

Pulsed Source-Drain Diode Forward Current

--

--

VSD

Source-Drain Diode Forward Voltage

IS = 2 A, VGS = 0 V

--

--

1.4

trr

Reverse Recovery Time

--

200

--

Qrr

Reverse Recovery Charge

IS = 2 A, VGS = 0 V
diF/dt = 100 A/V (Note 4)

--

0.7

--

&

Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=50mH, IAS=2.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD$GLGW$V9DD%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width V'XW\&\FOH
5. Essentially Independent of Operating Temperature

HFS2N60FS

Electrical Characteristics TJ=25 qC

HFS2N60FS

Typical Characteristics

101
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V

ID, Drain Current [A]

ID, Drain Current [A]

Top :

100

25oC

150oC

-25oC

* Notes :
1. 300us Pulse Test
2. TC = 25oC

* Notes :
1. VDS= 30V
2. 300us Pulse Test

-1

10

100

0.1

101

10

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

IDR, Reverse Drain Current [A]

RDS(ON)[:],
Drain-Source On-Resistance

12

VGS = 10V
6

VGS = 20V

150oC

25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test

* Note : TJ = 25oC

0
0

0.1
0.2

0.4

ID, Drain Current[A]

Capacitances [pF]

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd

Coss

300

200
* Note ;
1. VGS = 0 V
2. f = 1 MHz

Crss

100

1.0

1.2

1.4

1.6

1.8

12

VGS, Gate-Source Voltage [V]

Ciss

400

0.8

Figure 4. Body Diode Forward Voltage

Variation with Source Current
and Temperature

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage
500

0.6

VSD, Source-Drain Voltage [V]

10

VDS = 120V
VDS = 300V
VDS = 480V

2
* Note : ID = 2.0A

0
10-1

100

101

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

(continued)

2.5

RDS(ON), (Normalized)
Drain-Source On-Resistance

1.2

BVDSS, (Normalized)
Drain-Source Breakdown Voltage

HFS2N60FS

Typical Characteristics

1.1

1.0

0.9
 Note :
1. VGS = 0 V
2. ID = 250PA

0.8
-100

-50

50

100

150

2.0

1.5

1.0

Note :
1. VGS = 10 V
2. ID = 1 A

0.5

0.0
-100

200

-50

50

100

150

200

TJ, Junction Temperature [oC]

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature
2.0
Operation in This Area
is Limited by R DS(on)

100 Ps
1.5

ID, Drain Current [A]

1 ms
10 ms
100 ms

100

DC
10-1
* Notes :
1. TC = 25 oC

1.0

0.5

2. TJ = 150 C
3. Single Pulse

10-2 0
10

101

102

0.0
25

103

50

75

100

125

150

TC, Case Temperature [oC]

VDS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

D=0.5

ZTJC(t), Thermal Response

ID, Drain Current [A]

101

100

0.2
* Notes :
1. ZTJC(t) = 5.5 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)

0.1
0.05
0.02
10-1

0.01

PDM
single pulse

t1

-2

10

10-5

10-4

10-3

10-2

10-1

t2

100

101

t1, Square Wave Pulse Duration [sec]

Figure 11. Transient Thermal Response Curve

HFS2N60FS

Fig 12. Gate Charge Test Circuit & Waveform

.
12V

VGS

Same Type
as DUT

Qg

200nF

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
3mA

Charge

Fig 13. Resistive Switching Test Circuit & Waveforms

RL

VDS

VDS

90%

VDD
RG

( 0.5 rated VDS )

Vin

DUT

10V

10%

tr

td(on)

td(off)

t on

tf
t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD

L
VDS
VDD
ID

BVDSS
IAS

RG

10V

ID (t)
DUT

VDS (t)

VDD
tp

Time

HFS2N60FS

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT
+
VDS
_
IS
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
IS controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

IS
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

Vf

VDD

Body Diode
Forward Voltage Drop

HFS2N60FS

Package Dimension

{vTYYWmG

0.20

0.20
.2
0

2.540.20

6.680.20

0.700.20

12.420.20

3.300.20

2.760.20
1.47max

9.750.20

15.870.20




0.800.20

0.500.20

2.54typ
2.54typ

TO-220FM

TO-220F