BVDSS = 200 V

RDS(on) typ 

HFD630A / HFU630A

ID = 9.0 A

200V N-Channel MOSFET

D-PAK

I-PAK

FEATURES

1
1
2

Originative New Design

HFD630A

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

HFU630A

1.Gate 2. Drain 3. Source

Very Low Intrinsic Capacitances

Excellent Switching Characteristics
Unrivalled Gate Charge : 12 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) 7\S#9GS=10V
100% Avalanche Tested

Absolute Maximum Ratings

Symbol
VDSS

TC=25 unless otherwise specified

Parameter
Drain-Source Voltage

Value

Units

200

Drain Current

Continuous (TC = 25)

9.0 *

Drain Current

Continuous (TC = 100)

5.7 *

IDM

Drain Current

Pulsed

36 *

VGS

Gate-Source Voltage

30

EAS

Single Pulsed Avalanche Energy

(Note 2)

232

mJ

IAR

Avalanche Current

(Note 1)

9.0

EAR

Repetitive Avalanche Energy

(Note 1)

9.5

mJ

Power Dissipation (TA = 25)

2.5

Power Dissipation (TC = 25)

- Derate above 25

45

0.36

W/

-55 to +150

300

ID

PD

(Note 1)

TJ, TSTG

Operating and Storage Temperature Range

TL

Maximum lead temperature for soldering purposes,

1/8 from case for 5 seconds

* Drain current limited by maximum junction temperature

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

RJC

Junction-to-Case

--

2.77

RJA

Junction-to-Ambient*

--

50

RJA

Junction-to-Ambient

--

110

Units

/W

* When mounted on the minimum pad size recommended (PCB Mount)

HFD630A_HFU630A

August 2015

Symbol

Parameter

unless otherwise specified

Test Conditions

Min

Typ

Max

Units

On Characteristics
VGS
RDS(ON)
gFS

Gate Threshold Voltage

VDS = VGS, ID = 250

2.0

--

4.0

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 4.5 A

--

0.34

0.4

Forward Transconductance

VDS = 10 V, ID = 4.5 A

--

5.5

--

VGS = 0 V, ID = 250

200

--

--

VDS = 200 V, VGS = 0 V

--

--

VDS = 160 V, TJ = 125

--

--

10

VGS = 30 V, VDS = 0 V

--

--

100

--

420

525

--

99

128

--

24

28

--

11

--

--

91

--

--

70

--

--

72

--

--

12

17

nC

--

2.4

--

nC

--

3.5

--

nC

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate-Body Leakage Current

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

Switching Characteristics
td(on)

Turn-On Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS = 100 V, ID = 9 A,
RG = 25

VDS = 160 V, ID = 9 A
VGS = 10 V

Source-Drain Diode Maximum Ratings and Characteristics

IS

Continuous Source-Drain Diode Forward Current

--

--

ISM

Pulsed Source-Drain Diode Forward Current

--

--

36

VSD

Source-Drain Diode Forward Voltage

IS = 9 A, VGS = 0 V

--

--

1.4

trr

Reverse Recovery Time

--

158

--

Qrr

Reverse Recovery Charge

IS = 9 A, VGS = 0 V
diF/dt = 100 A/V

--

0.97

--

&

Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=4.3mH, IAS=9A, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width V'XW\&\FOH
4. Essentially Independent of Operating Temperature

HFD630A_HFU630A

Electrical Characteristics TJ=25 qC

HFD630A_HFU630A

Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current
and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

HFD630A_HFU630A

Typical Characteristics

(continued)

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

ZTJC(t), Thermal Response

D=0.5
100
* Notes :
1. ZTJC(t) = 2.77 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)

0.2
0.1
0.05
10-1

PDM

0.02
0.01
single pulse

10-5

10-4

t1
10-3

10-2

10-1

t2

100

101

t1, Square Wave Pulse Duration [sec]

Figure 11. Transient Thermal Response Curve

HFD630A_HFU630A

Fig 12. Gate Charge Test Circuit & Waveform

.
12V

VGS

Same Type
as DUT

Qg

200nF

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
3mA

Charge

Fig 13. Resistive Switching Test Circuit & Waveforms

RL

VDS

VDS

90%

VDD
RG

( 0.5 rated VDS )

Vin

DUT

10V

10%

tr

td(on)

td(off)

t on

tf
t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD

L
VDS
VDD
ID

BVDSS
IAS

RG

10V

ID (t)
DUT

VDS (t)

VDD
tp

Time

HFD630A_HFU630A

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT
+
VDS
_
IS
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
IS controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

IS
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

Vf

VDD

Body Diode
Forward Voltage Drop

HFD630A_HFU630A

Package Dimension

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HFD630A_HFU630A

Package Dimension

7.0 0.1 / 9.5 0.2

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