CEP51A3/CEB51A3

N-Channel Enhancement Mode Field Effect Transistor FEATURES

30V, 48A, RDS(ON) =16.5m @VGS = 10V. RDS(ON) =28m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D

G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a

Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30

Units V V A A W W/ C C

20
48 160 70 0.48 -55 to 175

Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range

Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 2.1 62.5 Units C/W C/W

2004.October 4 - 90

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CEP51A3/CEB51A3
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 40A VDS = 24V, ID =40A, VGS = 5V VDD =15V, ID =20A, VGS = 4.5V, RGEN =4.7 16 4.4 31 4.5 13 4 4 48 1.3 40 13 62 14 23 ns ns ns ns nC nC nC A V
c

Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS , ID = 250A VGS = 10 V, ID = 20A VGS = 4.5V, ID = 20A VDS = 10 V, ID = 20A 1 13.5 20 26 1340 232 82 Min 30 1 100 -100 3 16.5 28 Typ Max Units V
A

nA nA V m m S pF pF pF

VDS = 25V , VGS = 0V, f = 1.0 MHz

Drain-Source Diode Characteristics and Maximun Ratings

Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.

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CEP51A3/CEB51A3
30 VGS=10,8,6,5,4V 100 25 C

ID, Drain Current (A)

ID, Drain Current (A)

24

80

18

60

VGS=3V
12

40

20 TJ=125 C -55 C 3 4 5

0 0 1 2

VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics

1800 1500 1200 900 600 300 0 0 5 10 15 20 25 Coss Crss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100

VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics

C, Capacitance (pF)

Ciss

RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)

ID=20A VGS=10V

-50

50

100

150

200

VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance

1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50

TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature

VGS=0V
2

VTH, Normalized Gate-Source Threshold Voltage

VDS=VGS ID=250A

IS, Source-drain current (A)

25 50 75 100 125 150

10

10

10 -25 0

0.2

0.6

1.0

1.4

1.8

2.2

TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature

VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current

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CEP51A3/CEB51A3
VGS, Gate to Source Voltage (V)
10 VDS=24V ID=40A 10
3

ID, Drain Current (A)

4
10
2

RDS(ON)Limit 100s 1ms 10ms 100ms DC

10

0 0 4 8 12 16 20 24

10

TC=25 C TJ=175 C Single Pulse 10

-1

10

10

10

Qg, Total Gate Charge (nC) Figure 7. Gate Charge

VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area

VDD t on V IN D VGS RGEN G

90%

toff tr
90%

RL VOUT

td(on) VOUT

td(off)
90% 10%

tf

10%

INVERTED

VIN

50% 10%

50%

PULSE WIDTH

Figure 9. Switching Test Circuit

Figure 10. Switching Waveforms

r(t),Normalized Effective Transient Thermal Impedance

10

D=0.5

0.2

10

-1

0.1 0.05 0.02 0.01 Single Pulse

PDM t1 t2 1. RcJC (t)=r (t) * RcJC 2. RcJC=See Datasheet 3. TJM-TC = P* RcJC (t) 4. Duty Cycle, D=t1/t2

10

-2

10

-2

10

-1

10

10

10

10

10

Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve

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