MIL-HDBK-217F

BEF?1991
SUPERSEDING

MIL-HDBK-217E,
2 J8nwry 1990

MILITARY

NotIce 1

HANDBOOK
.

RELIABILITY PREDICTION OF
ELECTRONIC
EQUIPMENT

AMSC N/A
DISTRIBUTION

STATEMENT

A: Approved for public release; distribution unlimited.

MIL-HDBK-217F

DEPARTMENT OF DEFENSE
WASHINGTON DC 20301

RELIABILllY

PREDICTION

OF ELECTRONIC

EQUIPMENT

1. This standardization handbook was developed by the Department of Deferw

federal agencies, and industry.
with the assistance of the military dep~ments,
2. Every effort has been made to reflect the latest information on reliability
prediction procedures. It is the intent to review this handbook periodically to
ensure its completeness and currency.
3. Beneficial comments (recommendations, additions, deletions) and any pertinent
data which may be of use in improving this dooument should be addressed to:
Commander, Rome Laboratory, AFSC, AlTN: ERSS, Griffiss Ak Force Base,
New York 13441-5700, by using the self-addressed Standardization Document
Improvement Proposal (DD Form 1426) appearing at the end of this document
or by letter.

....

MIL-I+DBK-217F

CONTENTS
SECTION
1.1
1.2
1.3

1: SCOPE
Purpose .... .. .... ..... .. .. ... ... ....0...... .... .... .... . .... ....... ........ .. . ...... . .. .. .... .... ... ..... .. ... .... ....
Application .. ...... ...... .... ...*.. ......... .... .... ...... . ,, *........ ..........*. .....*...... .... ........ ..... .. ......
@rnputefized RdiabWty Predktbn .. .... .. .... ...... .. ....... .. .... .. .. .... .. .. ...... ... .. .... ..... ... .....

SECTION

2:

... ... ....... .... .. ................... .. .. ... ... ... .... ... .... ... .....

21

SECTION
3.1
3.2
3.3
3.4

3:
INTRODUCTION
Reliability Engineering . ........ ..
The Role of Reliability Predktbn ...**.*.*..... ......... ................ ......... ................. .............
Limitations of Reliability Predictions ..... *..*.*...
Part Stress Analysis Prediction ..... ........ ........ ...... . .. .... .. ..... ...... ... ... . ...0.. .... ... ... .... ....0

3-1
3-1
3-2
3-2

SEHION

4:

SECTION

5:
MICROCIRCUJTS,
INTRODUCTION .......**...**.....................0..... .................
C3ate/Lo@cArrays and Microprocessors ...... ..................................*... .....*..... .............

REFERENCE

DOCUMENTS

. .

. . .

. . . .

. .

. .

...0

. .

. . . .

. .

. . .

. .

. .

. . . . .

. .

. .

. .

. . .

. .

. .

. . . . . . . . . . . . .

. .

. .

. . .

. .

. .

. .

. .

. .

. . . .

. .

. .

. .

. .

. .

. .

. . . . .

. .

. .

. .

. . . . . .

. .

. .

. . . .

RELIABILIN

ANALYSIS

EVALUATION

.....................*..*... .......................

11
1-1
1-1

4-1
5-1
5-3
5-4
5-7
5-8
5-9
5-10
5-11
5-13

5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8

Memorfes ... ..... .... .... .... .... ...... .. . ...... .... .. .. .... ........ ...... ... .......... .... .. .... .... .. ..... .. .. ........
VHSICNHSIC
Like ... ........ ....... ........... ... ...... ........ .... ....... ....... .... .................... ..........
GaAs MMIC and D@ai Devioes . ........ .... .............. ... ...... ........ ..... ... ..... .. .... .. .... .. .. .......
Hybrids . .. .. ............ .... ...... .... ... ...... .. ........ ........ .... ....... .......... .... ...... ........ ... .. .. ... ... ....
SAW Devices .... .......... .. .... .... .. ...... ... .... .... ..... . ... .... ...... ... .... .. ...... .... .. .. ... ...... ..........
Magnetic Bubble Memories ........ ............ .... .. ... .... .......... .... ...... ... .. ... ..... .. ...... .. .. .. .....
XT Table for All .......... ............ ...... ...... ............ ...... ................... ........ ...... ............ .......

5.9

C2 Table for AIl . ....... .... .... ........ .... ....... .. ...... .. .... .............. ... .. .... ... ..... .. .......... ...........

5-14

5.10

5-15

5.11

%EsXL and fiQ Tabk= for ~i ..... ........ .... .... .... ... .. .. ........ ...... ... ....... ....... ........ .. .. ...... ...
TJ Determination, (All Except Hybrids) ...................................*... ............* ..................

5.12

TJ Determination,

(For Hybriis) ........... ......... ........................................... ....... .........

5-18

5.13

Examples .... ........ ........ .. .. ................... .. ........ .... .. .... ..... .... .......... ...... .... .... ... ...... .... ..

5-20

6:
DISCRETE
SEMICONDUCTORS
Discrete Semiconductors, Introduction ....... ........... ....... ......... .... .. ... ..... .. ... .... ... ..... ...
Diodes, Low F~ency
..... ........ .... .. .......... . .. .. ........ ...... .......
High Frequency (Microwave, RF) .... .......... .... .. ........ ..... ........ .... ....... .. ..... ......
Transistors, LOW Frequency, Bifx)lar ... .... .... ....... ... .... ..... .... ...... .... .. .... ..... ........ ... ... ...
Transistor,
Low Frequency, Si FET ..... ............... ............................................... ...*..
Transistors, Unijmction ..........00....................... .............. ....... ........ .......... ........... ... ...
Transistors, Low Noise, High Frequency, Bipolar . ..... ..... .... ...... ... ... ... .... .. ..... .. .. ........ .
Transistors, High Power, High Frequency, Bipolar .....................* ..........* .............. ... ...
Transistors, High Frequency, GaAs FET .. .. ..... .............0.... .. .... .... ... ... .... ....... .. ...........
Transistors, Hgh Frequency, Si FET ....... ....* ... .. ..... ... ... ...... .... ...... .. .... . .... ...... .... .... ...
~
end SCRS . ... .... ........ ........ .... .. ........... .... ...... ........ . ... .. .... .. .... .. .... ...... .. . ....
Optoelectronics, Detectors, Isolators, Emitters ........ ........ .. ... .. .......... .. .... .... ... .. .... .....
Optoeiectmnios, Alphanumeric Displays ... .... .. .... ................. .. .... ...... .... ... .... ... ..... .. ...
OploekWonios,
Laser Diode ................. ......* ...... .. ............ .... .... ... ...... .. ..*...... . .... ... ..
TJ Determination ..... .. .... .... .... ............ ... .... .... ...... .. ...... .. .... ..... .... ...... .... .... ..... .. .... ....

6-1
6-2
6-4
6-6
6-8
6-9
6-10
6-12
6-14
6-16
6-17
6-19
6-20
6-21
6-23

Example . ..... .... .. ........ ... .... ......... ............... .... ...... .. .................... .. .... ....... .. .... .. .........

6-25

SECTION
6.0
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
6.11
6.12
6.13
6.14
6.15

. . .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

Dbdes,

5-17

...

HI

MIL-HDBK-217F

CONTENTS
SECTION

7:
TUBES
All Types Except TM/T and Magnetron ........ ....................................................... .......
Traveli~ Wave . ....... .... ...... .... ........... ...... .. ...... .. ........ .... ......... .............. .. ...... ...........
Magnetron .. .. .......... .... .... .. ........ ... .......... .. .... ...*..... ...... .......... .. .... .......... ..... .........0..

7-1
7-3
7-4

SECTION
8.0
8.1
8.2
8.3
8.4

LASERS
0:
Introduction ... .................... ..... .... .. .... ...... .. ...... .... ......... .......... .. .. ............. .... ...... .. ....
Helium and Argon . .......... ... .......... .... ..... .... ... ..... .. ...........** . ... .... .... .... .... ...............* . ..
Catin
Dmxide, Sealed . .... .. ............ .. ....... ... ... .... ...... .. ...... .. .. ... ........ ...... .. ...... ....... ..
Carbon Dioxide, Fbwing .... .. ...... .... ........ .... ... .... .. .... ...... .... ....... ........ ...... ........ .........
SoIii State, ND:YAG and Ruby Rod .... .... .... .... ... ............ .. ............ .. .. .. ..... .... ...... .... ...

8-1
8-2
8-3
8-4
8-5

SECTION
9.0
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
9.10
9.11
9.12
9.13
9.14
9.15
9.16
9.17

RESISTORS
9:
Introduction .... ... ... ....... ............ ... .. ........ .... ... ... ................... .. .. ........ .... ......... ...... .. .. ..
Fixed, Composition (RCR, RC) ................................. ............................... .................
I%@, Fitm (RLR, RL, RN (R.C, or N). RN) . ............................ . ....... .... .................... ....
Fixed, Fltrn, Power (fWI) ........ ........ ...... ........ ... .. .. .......... .. ................... ............ ...........
Network, Fixed, Film (RZ) .. ........... ............. ............. .............. .................... ................
Fixed, Wirewound (RBR, RB) ... ......... ................... ............................ .................. ......
Fixed, Wkewound, Power (RWR, RW) ......... ...... .... .. .... ... .......... .. ........ .. ........... ...... ...
Fixed, Wirewound, Power, Chassis Mounted (RER, RE) ............................................
Thermistor (RTH) .......... ..... ........ .... ..... .... ...... .. .. .... .... ..... .... .... ........ .. ............ ... .. .. ....
Variable, Wirewound (RTR, RT) ......... ................................................................. ......
Variable, Wkewound, Precision (RR) ......... ....... ... ....... .......... .... .... ..... ................. ......
Variable, W/rewound, Semiprecision (RA, RK) . .... ................ ....... ................... ..... ..... .
Variable, Wkewound, Power (RP) . .......... .. ...... .. .. ..... .......... .... .... ....... .... ........ ..... ......
Variable, Nonwirewund
(RJ, RJR) ................................ ...........................................
Variable, Composttlon (RV) ...................*.. ........ ................................ ...... .. ................
Variabte, NOnwmwu nd, FitmwKI Prectsion (RQ, RVC) ... .... ........ ....... .. .... ................
Cakulation of Stress Rat& for Potent&meters . .... ........ .... .... ..... .... .... .. .. .... ..... ........ ...
Example . .. ..... .. ...... ....... ...... .... ..... ...... .... ... .. .. ............. .... .... ... .... .. ................... .........

9-1
9-2
9-3
9-5
9-6
9-7
9-8
9-1o
9-12
913
9-15
9-17
9-19
9-21
9-23
9-25
9-27
9-29

SECTION

10: CAPACITORS
Fixed, Paper, By-Pass (CP, CA) .. .... .... ...... ...... .. .. ... .... .... .......... ....... .............. ........ ...
Fixed, Feed-Through (CZR, CZ) . ........ ...... ........ .. ....... ...... .... .... ......... .. ...... .... .... .... ...
Fixed, Paper and Plastic Fitrn (CPV, CQR and CQ) .....................................................
Fixed, Metallized Pqw, Paper-Plastic and Plastic (CH, CAR) .. ...... .. .... ... ............... .... .
F&ed, Plastic and Metallized Plastic .............................................. ............................
Fixed, Super-Metallized Plastic (CRH) ........ ....... ..................... .... ........ ....... ...... .... .....
F&ed, MICA (CM, CMR) ........ .. .. .... .............. ... .. .. .. .. ...... ........ ............. ...... .. ...... .... .....
Fixed, MICA, Button (CB) ..... .. ....* . .... .......... .. ... .... .... .... .......... ..... .. ..... ..... .... .... .... .. ...
Fued, GJass (CY, CYR) ......... ........ ............. ....... ... ...... ............ ..... .. .. .... .... .. .. .... .... .....
Fixed, Ceramic, General Purpose (CK, CKR) .............................................................
.
and Chip (CCR and CC, CDR) . ...... ........ .
Fixed, Cerarnk, Tenpemtum ~
Fixed, Electrolytic, Tantalum, Solid (CSR) ........ .... .... .... .... ............. .... ....... .. .. ........ .. ...
Fixed, Electrolytic, Tantalum, Non-Solid (CL, CLR) ... .... .... .... ..... ........ ... ......... ..... .... ...
Fbd, Ektrotytic, Aluminum (CUR and CU) .... .. ...... .... .. .... ... .... .... .. .. .. .. ..... .... ...... .... .
Fixed, Electrolytic (Dfy), Aluminum (CE) ...................................... ..............................
Variable, Ceramic (CV) .. .......... ............ ............. ........................ ................................
Variable, Pkton Type (PC) ........ ......... ......... ......... ......... ................... ........................
Varitie. ArTfimmr
(C~ ............. ...... ........ .. ........... ...... ...... ....... ... ..... .... ........ ...... ...
Variable and Rxd. Gasor V.um(CG)
.. .... .. ..... ......... ... ...... ........ .... ... .... ......... ...... ..
Example ... ..... ........ .. ............ ... ........... .. .. ..... .... .. ..... .... .... ........... .... ..... .... ........ ..... .. ..

1o-1
10-3
10-5
10-7
10-9
10-11
10-12
10-14
10-16
10-18
10-20
10-21
10-22
10-24
10-26
10-27
10-28
10-29
10-30
10-32

7.1
7.2
7.3

10.1
10.2
10.3
10.4
10.5
10.6
10.7
10.8
10.9
10.10
10.11
10.12
10.13
10.14
10.15
10.16
10.17
10.18
10.19
10.20

iv

MIL-HDBK-217F

CONTENTS
SECTION
11.1
11.2
11.3

DEVICES
INDUCTIVE
11:
Transformers ........... .... .... .......... .. .... ..... .... .... ... ... ...... .... ....... .... .. .. .... ...... .. ..... .... .... ..
cob .... .....*.. .............................................................................*...... .....................
Determination of Hot Spot Temperature ............................................................0...0..

11-1
11-3
11-5

SECTION

ROTATING DEVICES
12:
Motors . . .... ........ .... .....* .. ........ .. .......... ......... .... ...... .. .. .... .............. ..... ........ .............
Synchros and Resolvers .............. .... ........ ..... .. ...... .... .... ........... ... ....... .. ............ ... ....
EIapsed Time Meters . .. .. .... ............*.. .. ........ .... ... ..... .... .... ............ ....... .. .. .... ........ ... ..
Example ... ...... .. ... .. .. ..... ........ ......... ........... .. .... .. ..... .... ........... ...... .. .. ... .. .......... ..... ....

12-1
12-3
124
12-5

RELAYS
13:
Mechanbl ......................................0.. ......................... ...................................0.....
Solid State and Time Delay

13-3

12.1
12.2
12.3
12.4

SECTION
13.1
13.2

. .

. . .

. .

. .

. .

. .

. .

. .

. .

. .

. .

...*.....

. .

. .

. .

. . .

. .

. . .

. .

. .

. .

..0......

13-1

SECTION

14:

SWITCHES

Toggle or Pushbutton ............ ..... ...... ...... ........ .... .............. .......... .. ... ... ............ ........
Basic sensitive .. .... ...... .. .. .......... .. .. ... ...... .... .. .... ...... .... .... ....... ............ ........ .. .. ... .... ..
Rotary .. ... .......... ...... ... .... ...... .. .......... .... ...... ... ...... .. .... ........ .... .... .. ..... ....... ... .... .... ...
Thumbwheel ... .. ....... ....... ...... ....... .... ........ .... ........ .. .... ........... ...... ...... ....... ... ..... .... ..
Circuit Breakers . ........ ........ .... .... ...... ........... .... .. ... ....... .... ....... .... .. .. .... .... ........ ..... ....

14-1
14-2
14-3
14-4
14-5

SECTION
15.1
15.2
15.3

15:
CONNECTORS
General (Except Printed Cir@t Board) .......... .... .... ...... ... .. ...... .... ... ..... ... .... .... .... .......
Printed Circuit Board . ... ........ .... .... ...... .... ... .... .... .. .. .. .. ........... ...... .. ...... ...... .. .. ....... ....
Integrated CituJlt Sockets .. ...... .......... ...... .. ... .......... .... .... .. ...... ... .. .. .............. .... .... ...

15-1
15-4
15-6

SECTION
16.1

lNTERCONNECTtON
ASSEMBLIES
16:
lntemomectkm Assenb+ies with Ptated Through t-totes . .. ....... ....... ... .... .... ........ ....... .

16-1

SECTION
17.1

17:
CONNECTIONS
Connections ..........................................................................................................

17-1

SECTION
18.1

METERS
18:
Meters, Panel .... ...... .. .... .. .. ................... .... ...... .... ...... .... ... .... ........ ........ .... .... ... .... ....

18-1

SECTION
19.1

19:

QUARTZ CRYSTALS
Quartz Crystals.......................................................................................................

19-1

SECTION
20.1

20:
hmp

LAMPS
.. ... .. .. .... ...... .... . ...... ...... .... ........ .. .... .. ....... ... ... .... .... .... .... .. .. . .. .... ........ .. .. .......

20-1

SECTION

ELECTRONIC
FILTERS
21:
Eiectmrtb Fitters, NorwTunabte................................................................................

21-1

SECTION
22.1

FUSES
22:
Fuses . . . ....0.... .. .. ....... ........ .... .......... .... ............ ... .. .... .. .. .... .... ....... .. ..... ... .. .. .. .........

22-1

SECTION
23.1

23:
MISCELLANEOUS
PARTS
Miscellaneous Patis ....... ..... ......... .. .... ... .... .... .... .......... ....... .... ........ .. .... ........ .. ....... ..

23-1

14.1
34.2
14.3
14.4
14.5

21.1

APPENDIX

A:

PARTS

COUNT

APPENDIX

B:

VHSIC/VtiSIC-LIKE

APPENDIX

C:

BIBLIOGRAPHY

RELIABILITY
AND

VLSI

PREDICTION
CMOS

. ...... .... .. ..... . ..... . .. .. .. .. ... ... .. .

(DETAILED

MODEL)

A-1

... .. .. ... ... .

B-1

. ......... .... .......... .... ... ...... .... .... .. .... ....... ...... ........ ............ ... ..

c-1

MIL-HDBK-217F

CONTENTS

LIST OF TABLES
Table
Table
Table
Table
Table

3-1:
3-2:
4-1:
&l:
S2:

Parts with Multi-Level Quality Spedfications .............................. ..........................

Environmental Symbol and Desdptiin ..............................................................
Reliability Analysis Cbckfist ...... ............... ... .. .......... .... ........ ..... ........ .. .......... ....
Default Case Temperatures for All Environments (~) ..... .. .... ....... ................. .......
Approximate Thermal Resistance for SernbncWtor
Devices
in Various Package Sizes ..... .... ..... ............. .... ........ .... ........ ... ............ .... ...... ... .

3-3
3-4
.
6:2;
6-24

LIST OF FIGURES
Figure 5-1:
Figure 8-1:
Figure 9-1:

vi

Cross Sectbnal Vk!w of a Hybrid with a Single Multi-Layered Substmte ......... ... .. ..
Examples of Active O@cal Surfaces ....... ........ ...... ... .... .... ... ..... .. ............. .... .... ...
MIL-R-39008 Deratinfj cum ... .. ............. ........................... ... ................. ... .. ... .. .

5-18
8-1
9-1

MIL-HDBK-217F

FOREWORD
This revision to MIL-HDBK-217
provides the following changes based upon recently completed studies
(see Ref. 30 and 32 listed in Appendix C):
1.

New failure rate prediction

microcircuits:
MonoliihE B~lar

models are prov-kled for the following nine major classes of

Dqital and Linear Gate/lm@c Array Devioes

Monolithic MOS Digital and Lmar

Gate/Logic Amy Devfces

Monolithic B@olar and MOS Digital Microprocessor Devkes (Including Controllers)

Monolithic Blpotar and MOS Memory Devices

Monolithk (W@

Monolithic GaAs MMIC Devices

Hybrid Microcircuits

Magnetic Bubble Memories

Di@tal Devices

Surface Acoustic Wave Devices

This revision provides new prediction models for bipolar and MOS microcircuits with gate counts up to
60,000,

linear microcircuits with up to 3000 transistors, bipolar and MOS digital microprocessor and co-

processor

up to 32 bits, memory devices with up to 1 nlftion bits, GaAs monolithic microwave integrated

circuits (MMICS) with up to 1,000 active elements, and GaAs digital ICS with up to 10,000 transistors.
Cl factors have been extensively revised to reflect new technology devices with improved
the activation energies representing the temperature
MOS devices and for memories.

The

reliability,and

sensitivity of the dice (nT) have been changed for

The C2 factor remains unchanged fmm the previous Handbook version,

but includes pin grfd arrays and surface mount packages using the same model as hermetic, solder-sealed
dual in-line packages.

New values have been included for the quality factor (~),

and the environmental

factor (@.

use, to delete the terrperature

the learning factor (~),

The rrwfel for hybrid microcircuits has been revised to be simpler to

dependence

provide a method of oakulating ohp jundon

of the seal and interconnect failure rate contributions, and to

temperatures.

2.

A new model for Very High Speed Integrated Circuits (V1-fSIC/VHSIC

Scale Integration (VLSI) devices (gate counts above 60,000).

Like) and Very Large

3.

The reformatting of the entire handbook to make H easier to use.

4.

A reduction in the number of environmental fado~

5.

A revised failure rate model for Network Resistors.

6.

Revised models for Ms

and Ktystrons based on data supplied by the Electronic Industries
Association Microwave Tube DiWon.

(~E) from 27 to 14.

vii

-- . ...=--------

- ----

--u.

I --

-u

MIL-HDBK-217F

1.0

Purpoee

- The purpose of thfs MruboOk

SCOPE

is to establish and maintain consistent and uniform

for estimating the hhemnt rek&Slity (i.e., the reUabflityof a mature design) of rnilbry @edron&
predictionsckhg aoquis&bn progmms
~~~
systems. It provides a common basfs for ~
for military ebctrcmc systems and equipment. h atso establishes a common basis for oomparfng and
evafuatlng reliability predictions of rdated or competitive destgns. The handbook is intended to be used
as a tool to increase the reliabil~ of the equ@merx being designed.
ti.~

1.2
Appllcatlon - This handtmok oontains two methods of reMWiJity pmdiotbn - Part Stress
Analysis In Sectfons 5 through 23 amf 7%rts Count- in Appendix IL These methods vary in degree of
informatbn needed to apply them. lhe Part Stress Anafysii Method recpires a greater amount of detailed
In&mtfon
and ts appfkabfe mrfng the later design phase when actual hardware and c&wits are being
designed. The Parts Count Method raquires less infonnatbn, generally part quantities, qmtity level, and
the applkatbn environmen& This method Is appfioable cMng the early de@ase and du~
pmpo@

formulation. In general, the Parts Count Metfwd wffl usually result in a more conservative estknate (i.e.,
~f*mte)ofsystem
r@taMtythanthe Parts Stress Method.
1.3
Computerfzad Rellablllty PmcffctlOn - Rome Laborato~ - ORACLE is a computer program
Based on
developed to aid in appfying the part stress analysis procedure of MIL-HDBK-217.
environmental use chamcteristks, piece part oount, thermal and electrical stresses, subsystem repair rates
and system configuration, the program calculates piece part, assemMy and subassembly failure rates. It
also flags overstressed parts, afbws the user to perform tradeoff analyses and provides system meantime-to-failure and availability. The ORACLE computer program software (available in both VAX and IBM
co~atible
PC versbns) is available at replacement tape/disc cost to all DoD organizations, and to
contractors for applbcatbn on spedfk
DoD contraots as government furnished property (GFP).
A
statement of terms and conditions may be obtained upon written request to: Rome Laborato~/ERSR,
Grtffiss AFB, NY 13441-5700.

f-l

..

,..
-,
..-,

.-

MIL-tiDBK-217F

2.0

REFE!?ENCE

DOCUMENTS

~s~cites
somespecificatbns which have beencanoslle dofwhiohdescrb ectevicesthatam
nottobeused fornewdes@n. lWiinfomatti&s
Wms$arytmcxames omeofthesed evicasarusecfin
soalfed %ff-th~
eqdpment which the Depwtment of Defense purchases. The documents cited
m this section are for @dance and information.
SPECIFICATION
MIL-C-5

SECTION #

10.7

MIL%l 1

9.1

MlL-R-l 9

9.11

MIL-G20

10.11

FMed,Mii-Dieisctric, General Specifii

Ca@&s,
~,

F&a

for

for

composition (Insufated) General $pecuii

Resiekx. Variab&gWirewound (Low Operating Tmpwatum) General

Spo&@atbn for
~)
@Pw@%=d~
~
v@fw=Estdfkhed and Nonestabiished Reliability, General Specifiiion

for

MIL-R-22

9.12

Rask!or, Wuewow

MIL-C-25

10.1

~.
fiti
p~r~~~
Dire Cwrent (Hermetically Sealed
in Metal Case@, General Specification for

MIL-R-26

9.6

MIL-T-27

11.1

ML-(X2

10.15

Resistor, Fued, Wkewound (Power Type), Genarai Specifhbn

10.16

for

Tmnsfonner and fndwtor (Audio, Power, High Power, High Power

Pulse). General Sfxdiibn
for

~r.

Pdar&ed),

MIL-G81

Power Type, General Spa&cation for

Fiu~ ~fo~~
(DG fgruminum.W
Gened spadkamn

E~@,

Capacitor, Variable, Ceramic Dielectric (Trimmer). General Specification

for

MIL-92

10.18

MIL-R-93

9.5

MIL-R-94

9.14

Resistor, Variable, Composition, General Specifiin

MIL-V-9S

23.1

Vior,

W-L-1 11

20.1

-.

W=

14.5

Ckauit Br@der, MOidOdC&m, BrarmflcfrcuRand~

W-F-1726

22.1

Fuse, Q@ridge, CJassH (Thii mvem renewable and mrwnebie)

w-f-i814

22.1

Fuse, Camidge, High Interrupting

Cqmcity

MfL-G3098

19.1

MIL-G3807

15.1

MIL-G3643

15.1

Resistor, Fwed, Wkewound (Aocura!e), General Spdfkdon

MlL4N8so

Luw

15.1

for

for

for

Interrupter and Self -RectifyingO General Specification for

Miniature, Tungaran Fikment

hadaant

Unk ~

~~end Spcifiw&m for

Connector,Coax&~Radii Frequency, Series Pulse, Gene@

,
SpdMlOns

for

Connector, Coaxial, Radio Frequency, Series NH, Associated Ftiings,

~neral

Variable, Air Dielectric (Trimmer), General Specificaii

Ctpcitor,

s~

for

Connector, Coaxial, Radio Frequency, Series LC

MIL-HDBK-217F
.
2.0

REFERENCE

SECTION #

SPECFKATJON
.

DOCUMENTS

Mt4X655

15.1

conneotor, P&q and Ramptda,

_(Jl=SeriasTwin)and
Associated Fitlmgs, General SpuM@mn
.

ML-C-3767

15.1

~.
SpacMiion

MIL-S-3786

14.3

S*.
~bn

Rotary (Circxit Selector, Low-Current (Capady)),

for

MfL-G3950

14.1

=.

Toggle, Envlmnmantally sealed, General

MIL-G3965

10.13

fq ~
for

(po~*

Elti~

=b~~~

(No-lkf

B&~

TYP@ -~~

General

Speckatbn

for

Electrolyte), Tantalum, General

MIL+5015

15.1

~,
Eledrkal,
Spedflcation for

MIL-F-5372

22.1

I%aa, Currati Limiter Type, Amaft

MIL-R-5757

13.1

Relay. Electrbl (For Electronic and Communkation

General Specifbaticm for

MIL-R-6106

13.1

Circular Threaded, AN Type, General

Type Equipment),

Relay, Electromagnetic (Including Established Reliability(ER) Typs),

~-~s~
bnp,

for
Incandemt,

Aviation Service, General Raquirament for

MIL-L-6363

20.1

MIL-S-8805

14.1, 14.2

SwhcheS and Switch Assemblies, Swxdtivo and Push, (SW

for
General Sfx@in

MIL-S-8834

14.1

Switches, Toggle, Positive Brealq General Specification for

MlL-M-l 0304

18.1

Meter, Electkal Indicating, Panel Type, Ruggedzed,

Spedficatbn for

MlL-R-l 0509

9.2

MIL-C-1095O

10.8

General

for

Resistor, f%cad IWm (High Stability). General Speoikatbn

-Or,

Fud,

Mii

Action)

Dielectric, Button Style, General Specifiiion

for

MIL-C-1101S
M!L-GI

10.10

~,
~bn

FU~, Ceramic Dtiric

for

(General Pupae),

Fixed, Glass Dlelectrb, General Spcfkatbn

Ganeral

1272

10.9

Capadtor,

MlL-C-l 1693

10.2

Capadtor, Feed Through. Radio Interference Reduction AC

.
Sdedh
Metal Casos)Eatabkhed
and No~
for
MaMfiio General Spdicatbn
l!!!!

MlL-R-l 1804

9.3

MIL-G12889

10.1

MIL-R-12934

9.10

Resistor, Freed, Film (Power Type), General Specifiin

for

andDC,
hed

for

Cap&or,
By-Pa&: Radio - Interfermce Reduction, Paper Dielectdc,
AC d
DC, (Hermetbally Sealed in Metallk Casas), Ganeral
Spectficatbn for
Resistor, Variable, Wirewound, Preasion, General Specification for

2-2

r- . . .

nv

-1

[1-/!1

, ---

--

.uu

l--

,-- --------

. .

ba

MIL-HDBK-217F

2.0

sPEcfFlcATloN

ML-C-141S7

REFERENCE

DOCUMENTS

SECTKMJ #

10s

~,
-d:
a
(papcurrent (Hermabd lySeabdin
@J-~ ~n

for

PI-tic) or mastic Dweot*

Direct
Refkwty,
Matal Cases) amMshed

MIL-G14409

10.17

~.
vSpac#ioatbn for

MIL-F-15160

22.1

Fuse, Instmnem

MK-C-IS305

11.2

Coil, Fixed and Vari*,

MfL-F-15733

21.1

FBtler,Rack

UL-GW312

10.4

~.
Dbbdrk,
~ibn

ML-F-13327

21.1

Pass, Band Pass, Band Suppression and Dual

Filter, High Pass, k
Funcknkg,
General Specdfiition for

MIL-R-16546

9.7

6.0

TyP, Tlar

Trimmer), GWWraI

Poww amf Telephone

Radio Frequency, General Specifiibn

Imarkmrux,

General SpecMin

for

for

-,
Metzdl&ed (Paper, Paper Plastic or Plastic Film)
Dkocl Cummt (Herrneticaliy sealed in Metal Cases), Gemral
for

Redstor, Freed, WWewound(Power Type, Chassis Mounted), General

Specificatbn

MIN-19500

(Pii

for

SomkOnductor Oevice, Geneml Specification for

MIL-R-19523

13.1

Relay, Contmi, Naval Ship&oard

ML-R-19M8

13.1

Roley, Tree, Delay, lherm~

ML-C-19978

10.3

~or,
Fmecf Plastic (or Paper-Plastic) Dielectric (Hermetically
Sealed m Metal, Cemmc or Glass Cases), EstafXished and
Noneatabiiahed ReGabilii, General Specifiicatbn for

MIL-T-21036

11.1

Transformer, Pulse, Low Power, General Specikatiin

MUA-21097

15.2

General Specifiition

for

for

Connector, Electrical, Printed WInng Board, General Purpose, General

Spedfbatbn for
MIL-FM2097

9.13

Rasistor, VarMMe, Nonwirewound (AdjustmentTypes), General

Spedfbatbn for
MIL-R-Z?664

9.2

MIL-S-2271O

14.4

S*.
-nerd

ML-S-22665

14.1

Switches, Pushbutton, Illuminated, General Specification for

MIL-C-22W2

1s.1

Connector, Cyfinddcal, Heavy Outy, General Specification for

ML+163

10.19

Resistor, F&d,

Mary
~*

~~

Film, lnsdated,

General Specifiiion

(Printed Circuit), (Tlwmbwheel.

ofi,v*.

M&GZ3269

10.9

em.
Fi~.
GSpeclkatbn
for

MIL-FW3265

9.1s

Reaiir,

V=xum

Diekrik

MI-*

Estiiiihed

for

In-1ine and Pushbutton),

General Specifiibn

Reliabllky, General

Variable, Nonwirewound, General Specificationfor

2-3

..

MIL-HDBK-217F

2.0

REFERENCE

SPECfFICATlON

DOCUMENTS

sEcTKm

MIL-F-23419

22.1

MIL-T-23648

9.8

MfL-G24308

15.1

#
Fuse, bstrumont

Type, Gonad

~km

for

Thormistw, (Tharmafly Sensitive Resistor), Insulated, Generaf

Spadfioatbn for
Connec40r, EPanel. Genoraf

Rectangular, Miniature Polatizad Shell, Rack and

Spodcatbn for

MIL-G25516

15.1

Cortnector, ~
-~~fof

MfL&+6482

15.1

Cormoctor, Efoctr&f (Circular. Minirdure, QuH kamnoc&

Environment Rl&ting)
ReU@ac&
and Plugs, General Spocik@ion
for

MN-R-27208

9.9

Resistor, VariaM,
Speciftiion
for

, Miniature, ~

Environment Resistant Type.

WKewound, (Lead Screw Actiied)

General

MIL-C-2f1748

15.1

Con-or,
Ebct~
Rectangular, Ra& and Panel, solder Type and
Crimp Type Contads, General Spacifiition
for

MIL-R-28750

13.2

Relay, Solid State, Ganeral Specification for

MfL-G288tM

15.1

Connector. E&ctric Rectangular, High Density, PoMzed Cantral

Ja&euww, Genoraf Spedficstion for, Inactive for New Designs

MIL-C-2884O

15.1

Conrmdor, ~
cimUlar Threaded, High Denaity, High Shock
Shipboard, Class D, General Spechation
for

MIL-hR851 O

5.0

M&oc5rcuits, Generaf Specificatii

MIL-H-38S34

5.0

Hybrid Microcircuits, General Specification for

MIL-I-38535

5.0

Integrated Circuits (Microcircuits) Manufacturing, General

Speclfiiion
for

MIL-C-38999

15.1

Qxvwc#or, E~
Chcular, Miniature, Hgh Density, Quick
Disconnect, (Bayonet, Threadad, and Breech Coupiing) Environment
Resistant Remowble Crimp and Hermetic Solder Cmtacts, General
Specifiiion
for

MfL-C-39001

10.7

qor.
~~,
Mh
Specification for

MIL-R-39002

9.11

Raa&stor, Variable, Wkewound, Sem&Precision, General Spa&icstion

for

MfLG39003

MIL-R~

10.12

a_~&*ewg

9.5

Raslatcx, Fixed, ~nd,

Specification for

MtL+39006

10.13

-N.
~~.
-I&
EstalMshed Relilii,

MfL-Raoo7

9.6

Resistor, Fixed, W~
General Speckition

Dkktk

for

Estabkhed ReliaMfity, Generat

T-lJm*

(Aaamte)

EstaMshed

Fteflabllity, General

(NortsoMf Ek%rolyte) Tantalum

for
General SpadkMon
nd (Power Type) EstaMished Reliability.
.

for

- -

..

.-. .

..

..

MIL-HDBK-217F

2.0

SPEOFICATR3N
MIL-R~

REFERENCE

DOCUMENTS

SECTION #
9.1

Redstor, Fixed, Campoah n, (Insutated) Established Reliability,

Genefal S@fio@hfor

9.7

R@!sMcw,m
~nd
(Power Type, chassis Mounted)
EstaMished R@aMfity, General SpecMcMion for

MLC-3901O

11.2

Cd, Fbrti
Spec#iibn

MIL-CX9012

15.1

Connector, Coaxial, Racfb Frequency, General Spdfii~

UL-C39014

10.10

MK-C49015

9.9

MIL-R39016

13.1

Radio Frequency, Molded. Established Ratiiity,

for

General

for

~.
~
Carandc Dielectric (General purpose) EsMMbhd
R8iiabili!y, Gmeral SpeoWation for
WkewOund (Lead screw Actuated) Emabfished
Rdetor, V*,
Reliability, General Spdfkatbn for
Relay, Electromagnetic, Established ReIiabilii,

General Specifiition

for
MtL-R-39017

9.2

Resietor, Freed, Fh

Specifiikm

(insulated), Estabkhed Reliabitky, General

for

Capacitor. f%ed, Ebctmlytio (Aluminum Oxide) Established Reliabil.~

and Nonestablished ReKaMIity, General SpecdfbNion for

MIL-G39018

10.14

MIL-C-39019

14.5

Cfrcutt Breakera, Magn@iq Low Power, Sealed, Trip%ee,

~bn
for

MIL-G39022

10.4

~r,
~d.
Mettiized Paper, Paper-Plastic Film, or Plastic Film
Dielectric, Direct and Alternating Current (Hermetically Sealed m Metal
Caaas) Estabfbhed Reliability, General Specification for

MIL-R-39023

9.15

Resistor, Varkble,

MIL-R-39035

9.13

Resistor, Variable,Nonwhwound, (Adjustment Type) Established

Reliability, General Spedkttbn for

MiL-G49142

15.1

Conne@or, Triaxial, RF, General Specification for

MIL-P-5511O

152

PrintedWdng Boards

General

Nonwirewound, Precision, General Specification for

Reliabilii,

General Specification for

MIL-R-65W2

9.2

MIL-G55235

15.1

Connector. Coaxial, RF, General Specif=tion for

MIL-G55302

15.2

Connector, Printed Circuit, Subassembly and Accessories

MILG65339

15.1

Adapter, CoaJC~ RF, General SpeMc8tbn for

MIL-G65514

10.5

qor.
~~,
,~k
(CWM@tdfizd Plastic) Dielectric, Direct
Current In Non-Metal Cases, General Spedfiibn
for

MIL-C-5S629

14.5

Circuit Breaker, Magnetic, Unsealed, Trip-Free, General Specification

for

MIL-T-S5631

11.1

Transformer, Intormdiato Ftewemx,

Radio Frequency, and
Discriminator, General Specific&lonfor
.
-

Resbtor,F~~EstddWd

------

MIL-HDBK-2 17F

2.0

REFERENCE

DOCUMENTS

SECTION#

SPECIFICATION
ML-C-55681

10.11

~r,
Rewility,

MIL-(X3383

Established

Conne,
Ekc&icaf, Circular, High Demity, Quiok Dmnect,
Envhonment Resisting, and Acc=swies, General SpecHMh

15.1

MlL~1511

Chip. M@t@lebayer, Freed, Ceramic Diekct~

General Sp&iGatm for

for

Circ@i6reaker, Remote ~ntrol, Thermaf, TripFree. General

SpecMiion for

14.5

MtL-R-S3401

9.4

MiL-G83421

10.6

~r,
f%cf Supennetallizodf%stb f% DiskcMc(DC, ACor DC
Soalecf in Metal Cases, ~bhed
Refiabiiity,
and AC) Hmwtb#y
ud~~

MIL-C-83513

15.1

Cwmecbr, EkcZrical, Rectangular, Mbrominiaturo,

Garbefal Specification for

ML-C-83723

15.1

Connedor, Ebctricd (Circular Environment Resisting), Receptacles

and Plugs, GeneraJ Speclficatbn for

MIL-R=72s

13.1

Relay, Vacuum, GoneraI Specification for

Resbtor Notwodq Fixu!, Fti.

Ganwal Spdkabn

for

Polarized Shell.

MIL-R-63726

13.1, 13.2,
13.3

MILoS-83nl

14.1

Switch, Toggle, Unsealed and Sealed Toggle, Ganeral Specifiin

MN-C-83733

15.1

Conmw%x, Ebc!dc@, Miniature, Rectangular Type, Rack to Panel,

Relay, lime Delay, Elec!ric and Electronic, General Specifiiion

for

for

EnvironmentResisting,200 Degraas C Tcxal ContinuousOpOfa@J

Temperature, General Spedcatbn

MIL-S43734

socket

15.3

Pl@n

for

Electronic Components, General Specifiikm

for

STANDARD
MIL-STD-756

Rehbility

MIL-STD-883

Test Mathods and Prmxdures for Microelectronics

Mk4TD-975

NASA Star#ad E&trid.

MIL=WD-1!547

Pmt8, Matwials nd Procasses fof Spaco Launch Veh&k8,

Requirements for

MtL-SlD-1~

Modeling and Prec&tbn

Efactronic
and EbctmmachanbalPartsLkt
TechnioaI

Requtrwnents ?orHyMd Mcrockufl FacflltWJand Unes

copies of specImat&ns and Stmdads required by contractors in comectbn with spcific acquisition
functbns should be oMlnad fmrn the contracting activityor as directed by the a)ntracting offiir. ~ngle
_
- ako available(withoutcharu8)uponwrfttenrequest
I to:

StandwdizatbnDocumentOrderDesk
700 Robins Ave.
Building 4, Seotion D
Philadelphia,
PA 19111-5094
(216) 697-2867

2-6

-----

- ~_

v.,

~.-y..,-..--

,.

. . -----

MIL-HDBK-217F

3.0

INTRODUCTION

Rellablllty Englneerlng - Reliability k currently recognized as an essential need in miIitary

3.1
ebctronic systems. It is looked upon as a means for -cing
costs fmm the factory, where rework of
debotive cxmpcments adds a mn-proddve
overhead expense, to the field, where repak costs Inotude
not onty pa~ and labor but also transportation and storage. More knportantly, reliabilitydirectly inpacts
force effectiveness, measured In terms of availability or sortie rates, and determines the stze of the
bgistics w inhibitingforce utilization.
The achievement of reliability is the fumtbn of refiabifity engineering. Every aspect of an eleotrodc
system, from the purtty of matertals used in fts oomponent devices to the operatots Inteflaoe, has an
impact on reliability. RelMWty engineering must, therefore, be appbd throughout the systems
development in a dillgent and timely fashion, and integmted wfth other engbewhg disoi@nes.
A variety of reliability engineedng tools have been developed.
supportinga basic tool, reliabilitypredctbn.

This handbook provides the models

The Role of Reflablllty Prediction - Reliability predictbn provides the quantitative baseline
needed to assess progress in reliabWty engineering. A prediction made of a proposed design may be

3.2

used in several ways.

A characteristic

of Computer Aided Design is the ability to rapidly generate alternative solutions to a

particular problem. Reliability pmdiibns
for each design alternative provide one measure of relative worth
which, mrWned with other considerations, will aid in selecting the best of the available options.
Once a design is selected, the reliabilii predktii nwiybe used as a @de to Iwpmvement by showing
the hphest contdbutorsto faifure. If the pwt stress analysis method is used, it may also rewaf other Wtful
areas for change (e.g., over stressed parts).
The Impact of proposed design changes on reliabilityoan be detemnktedonly by comparfng the reliatMty
predictions of the existing and proposed designs.
The ablltty of the design to maintain an accepable reliability level under environmental extremes may be
the need for
The predctkms
may be used to evafuate
assessed through reHaMty
pmdictbns.

erwtronmental control systems.

The effects of complexity on the probability of mission success can be evaluated through reliability
predictions. The need for redundant or baok-up systems may be determined with the aid of reliability
predictions. A tradeoff of redundancy against other reliability enhancing techniques (e.g.: more oooling,
higher part quality, etc.) must be based on reliability predictions coupled wfth other pertinent
considerations such as cost, spaoe limitations, eto.
The predbtbn will also he~ evahwte the s@fficance of reportscf fallume. For exa@e,
if emmml falkrres
of one type or oo~nent
occur In a system the predkted faliure rate can be used to determine whether

the number of failures Is commensurate with the number of components used in the system, or, that it
indicates a pmbbm area.
Finally, reliability predictbns are useful to varbus other engineering analyses. As examples, the location
of txdtt-h-test circuitry 6houfd be influenced by the predicted failure rates of the chwltry monftored, and

malntenanoe strategy plannem can make use of the relative pmbabifhy of a failures location, based on
predictions, to minimize downtime. Reliability predbtbrts are also used to evaluate the probabilities of
fajlure events described in a failure modes, effeots and criticalityanalysis (FMECAS).

3-1

----

-e

--

e-m~+

__
... ... . .. ____.=----

MIL-HDBK-217F
3.0

INTRODUCTION

Limitations of Rellabiltty Prodktions - This handbook provides a common basis for

reliability predictbns, based on anatysis of the best available data at the the of Issue. It Is interded to
make reliability prediction as good a tool as possble. However, like any tool, reliabilii predktbn rrust be

3.3

used htefiigently,withdue oonskferat)onof its MnWions.

The first limitation is that the failure rate models are point estimates which are based on available data.
Hence, they are valii for the condltbns under which the data was obtained, and for the devkes oovered.
Some extrapolation during model development is possible, but the inherently empirical nature of the
models can be severely restrictive. For exanple, none of the models m this handbook predict nuclear
suMvability or the effects of bnizing radiatbri.
Even when used in similar environmetis, the differences between system appliiions can be significant.
Pmdkted and aohleved rWaMlty have atways been doaer for ground electronic systems than for avbnk
systems, because the environmental stresses vary fess from system to system on the ground and hence

the field cor@tbns are In general cbser to the environment under which the data was oo#e@edfor the
prediction model.
However, failure rates are also impacted by operational scenartos, operator
characteristics, maintenance -s,
measummmt ~es
and dtlfe~~s
In deftnftbn of falfure.
Hence, a rellablflty predktlon should never be assumed to represent the expected field reliability as
Mean-Tirne-Between-Removak, etc.).
measured by the user (i.e., Mean-The-Between-Maintenance,
This does not negate its value as a reliability engineering tool; note that none of the applications
discussed above requires the predicted reliability to match the field measurement.
Electronic technology is noted for its dynamk nature. New types of devices and new processes are
oontjnually introduced, compounding the difficultiesof predkting reliability. Evolutbnary changes may be
handled by extmpolatbn from the existing models; revolutionarychanges may defy analysis.
Another Ilrnitatbn of retiablltty predktbns is the mechanks
method re@res a signlfkant afmmt of design detail. mk

of the process. The part stress analysis

naturalty knposes a time and cost permtty.

More signiiioantly, many of the detatts are not avaitab+ein the earty des~

stages. For thts reason rn!s

handbook contains both the part stress anatysts method (Sectbns 5 through 23) and a simpler parts count
method (Appendix A) which oan be used in early design and bid formulatbn stages.
Finally, a basic limitation of reliability prediction is its dependence on correct application by the user.
Those who correctly apply the models and use the information in a conscientious reliability program will
find the predktbn a useful tool. Those who V&Wthe prediction only as a number whkh must exceed a
specifiedvalue can usualty find a way to achievetheir ~at without any ion the system.

3.4

Part

Stress

Analysls

Predlctlon

Appltcabllfty - Th&smethod is applicable when most of the design is completed and a detailed
pads list incbding part stresses Is available. ft can also be used during later design phases for rel&bility
trade-offs vs. patl selection and stresses. Sections 5 through 23 contain failure rate models for a broad
variety d parts used in ekmtrmb equipment. The parts we grouped by major categories and, where
appropriate, are subgrouped within oategorfes. For mechanical and electromechanical pats not covered
3.4.1

by this Handbook, refer to Bibfbgraphy ftems 20 and 36 (Appendix C).

The failure rates presented appty to equipment under normal operating conditbns, Le., with power on and
performingIts intended functbns in Its ~ended environment. Extrapolationof any of the base faihn rate
models beyond the tabulated vahJessuch as high or subzero temperature, electrical stress values above
1.0, or extrapolation of any associated model modifiers is oompletety invalid. Base failure rates can be
interpolated between electrical stress values from O to 1 using the underlying equations.
The general procedure for determining a board level (or system level) failure rate is to sum individually
calculated failure rates for each oomponent. This summation is then added to a failure rate for the citcuit
board (which includes the effects of solderfng parts to tt) using Section 16, Interconnection Assemblies.

3-2

MIL-HDBK-217F

INTRODUCTION

3.0

For parts or wires soldered together (e.g., a jumper wire between two parts), the connections model
appearing in Section 17 is used. Finaliy, the effects of connecting circuit boards together is accounted for
by adding in a faiiure rate for each connector (Section 15, Connectors). The wire between connectors is
assumed to have a zem failure rate. For various sewice use profiles, duty cycles and redundandes the
procedures described in MIL-STD-756, Reliability Modeling and Prediction, should be used to determine
an effective system ievel faiiure rate.

3.4.2

Part Qualtty - rne~~of

apmh~am
effti~ti
pm fdhmratea~~mlntb
part models as a factor, *Q. Many parts am covered by spedfbations that have several quaffty levels,
hence, the part models have vaiues of XQ that am keyed to these qu~~

leve~=

Such Pafis w~h their

quality designetora are shown h Table 3-1. The detdled requirements for these levels are ciearty defhed

in the applicable specffkation, except for mkrockcuits.

depenckht on the ~mber

of MIL-STD-683

TatNe 3-1:
w

was

Mkmimfis

screens (or equivalent) to whii

Parts With Multl-Level

have qualhY levels which are

they are subjected.

Qua!lty Speclflcatlons
Uvumwa

UWw.

Microcimuits

S, B, B-1, Othec ~aliiy

Screening Level

Discrete Semiconductors

JANTXV, JANTX, JAN

Capacitors, Established
Reiiabiiii (ER)

D, C, S, R, B, P, M, L

Resistors, Established
Reliablllty (ER)

S, R, P, M

Coils, Molded, R. F.,

ReiiabUty (ER)

S, R, P, M

Relays, Established
Reliabiiily (ER)

R, P, M, L

r.q.

. .

. .

Judged by

Some Mrts are covered by older specifications, usualty referred to as Nonestablished

that & not have rnutti-levels of qu~i.
These part rn&fels generally have two qualfty
MIL-SPEC.-,
and Lower.
If the part is procured in complete accordance
specification, the ZQ value for MIL-SPEC should be used. If any requirements

Reliability (Non-ER),
levels d&i@ated &
with the applicable
are waived, or if a

commercial part is procured, the XQ value for Lower should be used.

The foregoing discussion involves the as procured part quality. Poor equipment design, production,
and testing facilities can degrade pad quality. The use of the higher quality parts requires a total

W?U@M~ de$~ ~ W~
COtid process co-~rate
with the high part quality. it wouid make iiile
sense to procure high quality parts on!y to have the equqmentproduction procedures damage the paftS
or introduce latent defects. Total equipment program descriptions as they might vary with different part
quality mixes is beyond the scope of this Handbook. Reliability management and quality control
procedures are described in other DoD standards and publications.
Nevertheless, when a proposed
equipment development
is pushing the state-of-the-art
and has a high reliability requirement
necessitating high quality pans, the ~
equipment program should be given careful scrutiny and not just

3-3

MIL-HDBK-217F

INTRODUCTION

3.0

the parts quafhy. Otherwise, the bw failure rates as predicted by the models for hgh quality parts will not

be realized.

3.4.3

models
h@lJde
the
Uee Environment - N Dart reliabm
through the environmental factor,- %Er except ~orthe effects of bn~

of envkorlmental Streeses
@~~.
The dem~b~
of

effeots

these envhunentsareshownin TaMe3-2.

The~fac!or
isqxmtfWdwithfn eachpartfaiUre rat8rnod8l.
These environments encorrpass the major areas of equprnent use. Some eqJ@ent wlfl experience
h such a case, the
more than one environrrwnt during its normal use, e.g., equipment in spacecraft.
reliabitii analysis should be segmented, namely, missile launch (ML) conditions during boost into and

returnfromo~

and space flight(SF) while

Table 3-2:

in orbft.

Envhomnental

Symbol

and Deacrlptlon

EqtJhratBnt
Environment
Ground, Bengn

Symbol
GB

MIL-HDBK-217E,
Notice 1
~ symbol
GB
%S

Nonmobile, temperature and humidity

controlled environments readily accessitde to
maintenance; includes laboratory instruments
and test equipment, medical electronic
equipment, businass and scientifc computer
mmplexes, and missiles and support
equipment in ground sibs.

Ground, Fixed

GF

Moderately amtrolied environments such as

installation in permanent racks with adequate
oooling air and possible installation m unheated
buildings; includes permanent tnstattatton of air
traffic control radar and communications
facilities.

Ground, MoMle

GM

GM

Equipment installed on wheeled or tradwd

vehicles and equipment manually transported;
includes ttiicai missile ground support
equipment, mobile communication equipment,
tactical fire direction systems, handheld
=mmunications equipment, laser designations
and range finders.

Mp

Naval, Shelterad

NS

NS
SB

Naval, Unsheltered

Nu

%
NW
NH

3-4

D-ription

Includes shehered or bebw deck conditions on

surface ships and equipmant installed in
submarines.

Unprotected surface ahipborne equipment

exposed to weather conditions and equipment
immersed in salt water. Includes sonar
$@pment and equipment installed on hydrofoil
vessels.

I
.4-..-.

.,

,.,

,.,

.,

. .. . . . .

..,..

. . .

!.

...

..,.

MIL-HDBK-217F

3.0

Environmental

Tabto 3-2:

Symbol

and Deecrtptlon

INTRODUCTION

(CXMWd)

E@valont
Description

Environment
%E

Airborne, Inhabitsd,

symbol
AK

tc
Am
*IB

Typical conditbns in cargo compartments

whbhcan beoaX@adby
arlahcraw.
Envlronmont axhmes d ~~U~,
~u~,sand vibration W. minimal.

Examplas Inctuda bng mission akcraftsuchas

thac130,c5, B!52andc141.

Thisoatagory
aboappueata
~edaroasinbwu
performance smaller aircraft such as the T38.

Airborne, Inhabited,
Fighter

IF

IF

Same as NC but installed on high performance

IA

aircraft such as fighters and interceptors.

Examples include the F15, F16, F1 11, F/A 18

and Al O aircraft.

Airborne, Uninhabited,

%C

Am
+
%JB

Environmentally uncontdbd
areas which
oannot be rnhdited by an aircrww during flight.
Environmental extrernos of pressure,
tefnperature and shock maybe severe.
Examples include uninhabited araas of bng

missiin ahwaft such as the C130, C5, B52 and

C141. This category aiso appJiis to
uninhabited area of bwer performance smaller
aircraft such as the T38.

Airborne,
Uninhabited,
Fighter

Same as NC but installed on high performanem

aircraft such as f~htem and interceptors.
Exarnplesincludethe F15, F16, F111 and AlO

AUF

aircraft.

Airborne, Rotary
w-

Space, Flight

ARvv

SF

%/

Equipment installed on helicopters. Ap@h to

both internally and externallymounted
squipmentsuch as laser designators, fire
mntrol systems, and communications
squpment.

---

APP=J

~mw9~~~

cmditions. Vehicle neither underpowered

flight nor in atmosphorio reentry; includes
satellites and shuttles.

3-5

MIL-HDBK-217F
3.0

INTRODUCTION

Table

3-2:

Environmental

Symbol

and

Descrfptlon

Equivabnt
MIL+fDBK-217E,
Mice 1
~ Symbol

Environment

(centd)

Description

~E Symbol
Missile, Flight

Conditions r.lated to poweredflightof air

breathing missibs, cruise missiles, and
missiles in unpowered free flight.

4A

Miiile,

Launch

Cannon, Launch

\
u=

CL

CL

Severe amditions relatwi to missile launch (air,

ground and Sea), space Vshiob boost into
orbit, and vehicle re+n~
and landing by
par~e.
Also applies to soI&l roclwt motor
ww~bn
POWW@ fhght, and torpedo and
missile launch from submarines.

Extremely severe conditions related to cannon

launching of 155 mm. and 5 inch guided
projectiles. Conditions apply to the projectile
trom launch to target impact.

3.4.4
Part Failure Rate Models - Part failure rate models for microelectronic parts are significantly
different fmm those for other parts and are presented entirely in Section 5.0. A ~pical example of the
type of model used for most other part types is the folbwing one for discrete semiconductors:

~=~fiTfiA~R~S~C~Q~E

is the patt failure rate,

is the base failure rate usually

expressed

by a model relating the influence of electrical and

temperature stresses on the part,

and the other n factors modify the base failure rate for the category
eppkath

of environmental

amf other parameters that affectthe paft reKMity.

me ZE and XQfaotors are used in most ali models and other x factom app~ only to SWC~~ ~dels.

The

applicability of z factors is Identified in each sectbn.

The base failure rate (~)

models are presented

in each part section along with identification of the

applicable model factors. Tables of calculated ~ values are also provided for use in manual

calculations.

The model equations can, of course, be incmporated into computer programs for machine processing.
The tabulated values of ~ are cut off at the part ratings with regard to temperature and stress, hence, use
of parts beyond these cut off points will

3-6

overstress tk pan. The use of the lb models in a ~mPuter

MIL-HDBK-217F
.
3.0

pmgrarn should take the part rating limits into account.

The ~

equations are

INTRODUCTION

mathematically continuous

beyond the part ratings but such faiiure rate vaiues are invalii in the overstressed regions.

Aii the part modeis imiude faiiure data from both cahstmphic

and permanent drift failures (e.g., a resistor

permanently falling out of rated tolerance bounds) and are based upon a constant failure rate, except for
motors whch show an increasing failure rate overtime.
FaiJures associated with connection of parts into
circuit asserrbiies are not imluded within the part faiiure rate models. Information on cxmnection reliabilii
is provided in Sections 16 and 17.

- The use of this prediction method requires the determinatbn

of the
3.4.5
Thermal
Aspects
temperatures to which the parts are subjected.
Sinoe parts reliability is sensftive to temperature, the
thermal anatysis of any design shouid fairty accurately provide the ambient temperatures needed in using
the part models. Of course, bwer temperatures produce better reliihty
but aiso can pmc&ce hcreased
penatties in terms of added toads on the environmental oontrol system, unless achkved
through
improved thenmal design of the equipment. The thermal analysis shouid be part of the design process
and included in ail the trade-off studies covering equipment performance, reliability, weight, volume,
environmental control systems, etc. References 17 and 34 listed in Appendix C may be used as guides in
determining component temperatures.

3-7

[
,,.,.... .
I

,., ,.

,..

...

.,.
...!

,.-

MIL -HDBK-217F

4.0

RELIABILITY

ANALYSIS

EVALUATION

for evaluating a reliability predii

report.
Tabie 4-1 provides a ~
For completeness, the cttecfdist includes categories for refiabiiity modeling and albcatbn,
which are
sometimes deiivered as part of a predctibn report. it should be noted that the scope of any reliability
analysis depends on the specific requirements called out in a statement-of-work
(SOW) or system
k not intended to change the soope of these requirements.
speckatbn.
The inclusion of this ckkiist
Tabl.
Malor
COncarns
--- ---. --

4-1:

Reliablllty

MODELS
Are allfunctional elements included in the
raliabiihybbdc diagram /model?
Are all modes of operation considered in the
nlti

modd?

Do the math model results show that the design

achieves the reliabiiii requirement?

ALLOCATION
Are system reliability requirements allocated
(suMivided) to useful levels?

Does the allocation process consider

;am~:;?ty, design flexibility, and safety
m
PREDICTION
Does the sum of the parts equal the value of
the module or unit?

Anatysls

Checkltet
Commonts

. . . ..-

System design drawingddiagrarna must be rwiewed to

be sure that the relkbilii modekfkgram qreoa with tho
hardwn.
~
@OS, an~ae
paths, degraded conditbns and
redundant units must bedefinedandmodeted.
Unit failure rates and redundancy aquations are used
from the detailed paft predictions in the system math
model (See MIL-STD-756, Reliability Predictbn and
Modeiing).

Useful Ievets are defined as: equipment for

sulxxmtractors, assemblies for sub-subcontractors,
arouit boards for designers.
Conservative values are needed to prevent reallocation
at every desgn change.

Many predictbns neglect to include all the parts producing

optimistic results (check for solder connections,
connectors, circuit boards).

Are environmental ccmditmnsand part quality

representative of the requirements?

Optimistic quality levels and favorable environmental

cxmditions are often assumed causing optimistic resutts.

Are the circuit and part temperatures defined

and do they represent the design?

Temperature is the biggest driver of part failure rates;

bw temperature assumptions will cause optimistic
results.

Are equ~ment, assembly, subassembly and

part reliability drivers identified?

Idontifioation is needed so that corrective actions for

reliabitii improvement can be considered.

Are alternate (Non MIL-HDBK-217) failure rates

highlighted along with the rationale for their
use?

Use of alternate failure rates, if deemed necessary,

require submission of backup data to provide credence in
the values.

Is the level of detail for the part failure rate

models sufficient to reconstruct the result?
Aro critical components such as VHSIC,
Monolithic Microwave Integrated Circuits
(MMIC), Application Specific Integrated
Circuits (ASIC) or Hybrids highlighted?

Each component type should be sampled and failure

rates completely reconstructed for accuracy.
Prediction methods for advanced technobgy parts should
be oarefully evaluated for imp-on
the module and
system.
I
I

4-1

MIL-HDBK-217F

5.0

MICROCIRCUITS,

INTRODUCTION

This section presents failure rate prediction models for the following ten mapr classes of microelectronic
devices:

Swis2rl
5.1

Monolithic Bipolar Digital and Linear Gate/LogicArray Devices

5.1

Monolithic MOS Digital and Linear Gate/Logic Array Devices

5.1

Monolithic Bipolar and MOS Digiial Microprocessor Devices

5.2

Monolithic B~lar

5.3

Very High Speed Integrated Chcuit (VHSIC/VHSIC-Like

Gates)

5.4

Monolithic

5.4

Monolithic GaAs MMIC

5.5

Hybrid Microcircuits

5.6

Surface

5.7

Magnetic Bubble Memories

and MOSMemoryDevices
and VLSI) CMOS Devioes (> 60K

GaAs Digital Devices

Acoustic Wave

Devices

In the title description of each monolithic device type, Bipolar represents all llL,

ASITL,

DTL, ECL, CML,

ALSITL, HTTL, Fl_ll, F, L~L, SITL, BiCMOS, LSITL, IIL, 13L and ISL devices, MOS represents all
metal-oxide microcimuits, which includes NMOS, PMOS, CMOS and MNOS fabricated on various
substrates such as sapphire, poiycrystaftine or single crystai siiicon. The hybrid model is structured to
accommodate aii of the monolithic chip device types and various complex~ Ieveis.
Monolithic memory complexity factors are expressed in the number of bits in accordance with JEDEC STD
21A. This standard, which is used by ail government and industry agencies that deal with microcircuit
memories, states that memories of 1024 bits and greater shall be expressed as K bts, where 1K = 1024
bits. For example, a 16K memory has 16,364 bits, a 64K memory has 65,536 bits and a 1M merno~ has
1,048,576
bits. Exact nurrbers of bits are not used for memories of 1024 bits and greater.
For devices having both linear and digital functions not covered by MIL-M-3651 O or MIL4-38535, use the
iinear modei. Line drivers and iine receivers are considered iinear devices. For iinear devices not covered
by MIL-M-3851 O or MiL-i-38535, use the transistor count from the schematic diagram of the devioe to
determine circuit complexity.
For digitai devices not covered by MIL-M-3851 O or MIL-I-38535, use the gate count as determined from
the logic diagram. A J-K or R-S flip fbp is equivalent to 6 gates when used as part of an LSi circuit. For the
putpose of this Handbook, a Oate is constierecf to be any one of the following functions; AND, OR,
exciusive OR, NAND, NOR and inverter. When a bgic diagram is unavailable, use dev.ke transistor count
to determine gate count using the folbwing expressions:

Bipolar
CMOS
Al! other MOS except CMOS

No. Gates = No. Transistors/3.0

No. Gafes = No. Transistors/4.O
No. Gates = No. Transistors/3.O

5-1

MIL-HDBK-217F

5.0

MICROCIRCUKS,

INTRODUCTION

A detailed form of the Section 5.3 VHSIC/VHSIGLikemodel is inoluded as Appendix B to allow more
detailed WleWfs to be performed. Reference 30 should be consulted for more information about this
model.
Reference 32 should be consulted for more Informatbn about the models appeartngin Sections5.1,5.2,
5.4,5.5. and 5.6. Reference 13 should be consulted for additional information on Section s.7.

MIL-HDBK-217F

5.1

GATE/LOGJC

MICROCIRCUITS,

ARRAYS

AND

MICROPROCESSORS

DESCRIPTION
1. Bipolar Devices, Digital arxf Linear Gate/Logic Arrays
2. MOS Devices, Di@tal and Linear Gate/Logio Arrays
ArTay (~)
am
3. F*H PmgranwwMe Lx
Programmable Array Logic (PAL)
4. Microprwessors

(ClZT + C2Y@ ~

~=

Hgml,ar Di@al and Linear GafeA@c

DighJ
No. Gates
1 to
101 to
1,001
to
3,001
to
10,001
to
30,001
to

100
1,000
3,000
10,000
30,000
60,000

to

101 to
301
1,001

to
to

100
300
1,000
10,000

c.

.020
.040
.060

Linear
No. Transistors

c,

100
1,000
3,000
10,000
30,000

.010
.020
.040
.080
.16
.29

ltol

c,
.010
.020
.040
.060

to 60,000

NOTE:

For CMOS gate counts above 60,000 use the V1-iSIC/VHSIC-Like

101 to
301

1,001

Die Complexity Failure Rate - Cl

Up to 8
Upto 16
up to 32

PLA/PAL
No. Gates

.010

1
101
1,001
3,001
10,001
30,001

No. Bits

Failure Rate-Cl
c,

up to 200
201
1,001

.010
.021
.042

to 1,000
to 5,000

D@al and Linear Gate/Logic Army Die CorqSexlty Failure Rate - Cl

DQital
No. Gates
to
to
to
to
to

c.
.0025
.0050
.010
.020
.040
.080

Amy Die Cm@exity

Linear
No. Transkws

I
[

Fdlures/106 t+ours

to
to

3
1,0

10,0

PLNPAL
No. Gates
up to 500
501 to 1,000
2,001 to 5,000
5,001 to 20,000

c,

.00085
.0017
.0034
.0068

model in Section 5.3

All Other Model Parameters

Parameter
Refer to

Bipolar

MOS

c,

c,

Section 5.8

.060

.~4

Section 5.9

.12

.28

Section 5.10

.24

.56

II

5-3

..

MIL-HDBK-217F
.

5.2

MICROCIRCUITS,

MEMORIES
DESCFilPTION
1. Red ~
Memories (ROM)
2. ~armable
Read Only Memorns (PROM)
3. lJ~
mPROMS (UVEPROM)
4. Flash; MNOS and Floating Gate ElectdcaBy
bOkJdf3S both
Erasable PROMS (EEPROM).
fbating gate tunnel oxide (FLOTOX) and textured
polysiliin type EEPROMS
5. Static Rancbm Access Mermles (SRAM)
6. ~
R~
/@cess Mwnories (DRAM)
~=

(C1 %T + C2 %E + ~

FailumsH06

HOtJm

Die Complexity Faih.JmRate -Cl

M

lar

>

PROM,
uvEPROM,
Memory Size, B (Bits)

ROM
.00065
.0013
.0026
.0052

up to 16K
16K<Bs64K
64K<Bs256K
256K<Bs1M

Al Factor for ~c
Total No. of
Programming
Cycles Over
EEPROM Life, C

z=
.00085
.0017
.0034
.0068

SRAM
DRAM

(MOS &
BiMOS)

ROM,
PROM

SRAM

.0013
.0025
.0050
.010

.0078
.016
.031
.062

.0094
.019
.038
.075

.0052
.011
.021
.042

Cablatbn
Textured-

Flotox

Polp

.00070
.0014
.0034
.0068
.020
.049
.10
.14
.20
.68
1.3
2.7
3.4

.0097
.014
.023
.033
.061
.14
.30
.30
.30
.30
.30
.30
.30

Factor for kc

I Total No. of Programming

Cycles Over EEPROM
Ltfe. C

Calculation
I
Textured-Poly
I

Up to 300K
up to 100
100< CS2OO
200< C<500
500< CS1K
1K<CS3K
3K<CS7K
7K<CS15K
15K < CS20K
2oK<csi30K
30K < CS lOOK
100K < CS200K
200K<CS400K
400K < C s 500K
1.

Al =6.817

x10+(C)

2.

No underlying equation for TexturedPoly.

300K < C s 400K

1.1

400K < C s 500K

2.3

AJl Other Mc
Parameter

IelParametem
Refer to

XT

Section 5.8

C*

Section 5.9

fiE,

~Qt

Section 5.10

XL

(EEPROMS

~c

Page 5-5

only)

~c

= O

For all other devices

5-4

A2

..

MIL-HDBK-217F

5.2

MICROCIRCUITS,

w,

~=o

All Memory Devices Except Fbtox and

Textured-Poly EEPROMS
Fbtox and Textured Poty EEPROMS
~[

c=

Al

61 +

A*B*
~

ECC

Al

P-54

P*
Page 54

B,

Page 5-6

Page 5-6

A2

A2=o

Page 5-5

02

~=o

P*

%Q

Sectbn

Error Correction Code (ECC) Optkms:

1. No On-Chip ECC

MEMORIES

5-6

Seotion 5.10

5.10

= 1.0

%ECC = ~.0

2. On-ChP Hamming Code

~ECC = .72

%ECC = .72

3. Two-Needs-One

~ECC = .68

~ECC = .66

~ECC

Redundant Cell Approach

NOTES:

1.

See Reference 24 for modeling off-chip error detecton and correction

schemes at the memory system level.

2.

If EEPROM

3.

Error Correctbn Cde Optbns: Some EEPROM manufacturers have incorporated

on-chip error correction chxwitry into their EEPROM devioes. This is represented by
the on-chip hamming code entry. Other manufacturers have taken a redundant cell
-~
which immporates an extra storage transistor in every memory ceil. mis
is represented by the two-needs-cm
redndant cell entry.

4.

The Al and

type is unknown, assume Fbtox.

factors shown in Section 5.2 were devebped

based on an assumed

system life of 10,000 operating hours. For EEPROMS used h systems whh
significantly bnger or shorter expected lifetimes the Al and ~ factors should be
multiplied by:
10,000
System

Lifetime

Operating

Hours

5-5

MIL-HDBK-217F
5.2

MICROCIRCUITS,

MEMORIES
t

~
Fa

co

x
*

8
m

%6

===1

,,

.. ,

MIL-HDBK-217F

5.3

MICROCIRCUITS,

VHSICNHSIGLIKE

AND

VLSI

CMOS

DESCRIPTION
CMOS greater than 60,000 gates
~

%@MFGfiPCD

+ ~pzEx@p~

Failurest106 HOUrS

+ ~~~

ANOther Model Parameters

Ok Base Falture Rate - ~D

I

Part Type

60

Logic and Custom

0.16

me

0.24

Army

Parameter

Refer to

%T

Section 5.8

%E~~

Se@on

Correction Factor

Package Type

Manufaotwing

%FG

II

.55

Process

QML or QPL
Non QML or Non QPL

Hefmetc

DIP
Pn Grid Amy
CMp Carrier
(Surface Mount

2.0

- Xm

PT
Nm&mettc

Paokage Type

5.90

1.0

1.3

2.2
4.7

2.9
6.1

T@chnnlnnv\

Dle Complexity Correction Factor - ~D

I

Feature S&e

(Mkmns)
.80
1.00
1.25

As.4
8.0
5.2

[
I
I

A =

-f+)

[v

Die Ama (Cr#)

.7< AsI.O
1.0< As2.O
19
38
I
1
13
25
I
I
I
I

.4< As.7
14
8.9

:i+-M

1
2.0<
i
I
I

A s 3.0
58
37

Total Scrbed Chip Die Area in cm2

58

82

:-asw;:bns)s)

Die Area Conversion: cm2 = MIL2 + 1S5,000

Package Base FaUure Rate - ~p

BP

24
28
40
44
48
52
64
84
120
124
144
220

.0026
.0027
.0029

ksp
NP

Ekctrical Overstress Faiture Rate - l~h~

Number of Pins

=
=

.0022+

((1 .72X

10-5)

Nu~r

of Package Pins

VTH (ESD %SC@bility

o-

.0030
.0030
.0031
.0033
.0036
.0043
.0043
.0047
.0060

~OS

(NP))

TH

(VOttS))*

.065

1000

>1000-2000

.053

>2000-4000

.044

>4000-

16000

.029

> 16000

UJCU7_n

EOS

- (-In (1 -.00057

.0027

exp(- .0002 Vw))

/.00876

= ESD Susceptibility (volts)

Voltage ranges which will cause the pad to

fail. If unknown, use O -1000 vofts.

Al

Q!

,.,

.-.

MIL-HDBK-217F

5.4

MICROCIRCUITS,

GaAs

MMIC

AND DIG~AL

DEVICES

DESCRIPTION
Ga)iiim Arsenide Microwave Monolithic Integrated Citwit
(GaIW MMIC) amt GaAs Digitai hltegrated Ci-ixhsUshg
MESF~ Transistorsand Gold Based MetaJliion

Die Complexity FaiWe Rates - Cl

(No.of

1.

Cl

Application

4.5
7.2

1 to 100
101 to 1000

accounts for the following active

elements:

..

c,

complexity
Elements)

%A

MMIC Devices
Low Noise & Low Power (S 100 mVV)
Drtvar& High Rnuer(> 100 mw)
Unknown

1.0
3.0
3.0

Digttal Devices
All Digital Applications

1.0

transistors, diodes.

<
-:

Die CompkIXRy Failure Rates - Cl

Complexity
(No. of Elements)
1 to 1000
1,001 to 10,000

1.

Cl

c,

25
51

aocounts tor the following aotive

elements:

All Other Model

Parameter

Parametem
Refer to

XT

Sectbn

5.8

C*

Section 5.9

transistors, diodes.
nE, XL,

5-8

~Q

Section 5.10

I
?

....

.,.

...

MIL-HDBK-217F

5.5

MICROCIRCUITS,

HYBRIDS

DESCRIPTION
Hybf@ MicrociruJits

+.2XE)ICF~Iy

~=[~Nc~l(l

FaMureM06Hours

Nc

Number of Each Particular Conpnent

kc

Failure Rate of Each Particular Corqmnent

The general pmcechme for developing an overall hybrid faikJm rate )s to oalculde an individual failure fate
for each component type used in the hybrid and then sum them. This summatbn is then modfied to
axoun
for the ovendl hybrid fumtiin (x#, suwning level (~), and matudty (~.
~
~
~
failure rate is a function of the active mmponent faiture modified by the environmental factor (i.e., (1 + .2
~E) ). Ow th ~~ne~
~
w~ in th fob~~
t8bk ar8 rnns~~
to ~nf~e
8@Wb~& ~

the overall failure rate of most hybrids. AU other cxxnponent types (e.g., m@stor& inductag et@ are
considered to contribute lnslgnffkanttyto the overalt hybridfailure rate, and are assumed to have a failure
rate of zero. This simplification is valid for most hybrids; however, if the hybrid consists of mostiy passive
components then a failure rate should be calculated for these devices. tf factorirm in othi?r comQonenf
.
types, assume ZQ = 1, ~ =1 and TA = Hybrid Case Temperature for these calculat b~s.
of&

Determination

Determine ~ for These

Handbook

Section

Mak~ These Asswptions

L

co mponent Types
Microcircuits

C2=0,

XQ=l ,1=

Section 5.12, ~P
Discrete Semiconductors

When Determining

1, TJ as Determined from
= O (for VHSIC).

= 1, TJ as Detemined

from Section

6.14,

%E=l.

Capacitors

10

~=1,

TA

= Hybrid Case Temperature,

~E=l.
NOTE:

If maximum rated stress for a die is unknown, assume the same as for a discretely pdie of the same type. If the same dw has several ratings based on the discrete ~
type, assume the bwest rating. Power rating used sh6uld be based on case terrper~ure
for discrete semiconductors.
Chcuit Function Factor -

All Other Hybrfd Model Parameters

Digital
Vii,

1.0
10MHz<f<l

Microwave,

f >1 G1-lz

Linear, f <10

Power

MHz

Circuit Type

GHz

~LI ~Q, ~E

Refer to Section 5.10

I

1.2
2.6
5.0
21

5-9

MIL-HDBK-217F

5.6

MICROCIRCUITS,

SAW DEVICES
DESCRIPTION
Surface Acoustic Wave Devices

$ = 2.1

IQ %E Fai)ures/106 Hours

Environmental

Quaiity Factor - ~
Screening Level

XQ

10TerTpf&mre Cycleal
(+5% to

.10

Factor - xcL
%E

Environment

+125C) with end point electrical

tests at temperature extremes.
None beyond bestcwmmwkat
practices.

.5

%3

2.0

4.0

II
1.0

his

4.0

Nu

6.0

AC

4.0
5.0

IF

5.0

%c

8.0

UF

8.0

RW

.50

SF

5.0

MF
ML

12

CL

220

5-1o

1
I

El

.-

MIL-HDBK-217F

5.7

MICROCIRCUITS,

MAGNETIC

The magnetic bubble memory device in its present form is a noMwnWic

folbwing two mapr structural segments:

BUBBLE

MEMORIES

assembty consisting of the

1.

A basic bubble chip or die consisting of memory or a storage area (e.g., an array of minor
hops), and required control and detection elements (e.g., generators, various gates and
detectors).

2.

A magnetic structure to provide controlled magnetic fields consisting of permanent

coils, and a housing.
.

magnets,

These two structural segments of the device are intemcmnected by a mechanical substrate and lead
frame. The interconnect substrate in the present technology is normally a printed cirwit bead.
tt shoukf
be noted that this model does not inohde external suppmt microelectronic devices reqJired for magnetk
bubble memory operation. The model is based on Reference 33. The general form of the fakwe rate
model is:
~=

~1 + ~

FaiJurest106 Hours

where:
k, = Failure Rate of the Control and Detection Structure

~ = Failure Rate of the Memory Storage Area

ctips per Package - NR

Nc

Device Complexity Failure Rates for Control and

Detectbn Stmcture - Cl, and C,l

Number of Bubble Chips per

c,, =

Packaged Device

Temperature

~T=(.l)@xp
[ 8.63

Factor - XT

-Ea
X

1
10-5

TJ +273-=

)1

C2,

.0001 (N1)226

N,

Number of Dissipative Elements

on a Chip (gates, detectors,
generators, etc.), N, $1000

Use:
=

.8 to Caloulate ?tTl

Ea

.55 to Calotdate *T2

TJ

Junction Temperature

(C),

25 STJS175
TJ

.00095( N1)40

TCASE + IOC

MIL-HDBK-217F

MICROCIRCUIT,

5.7

MAGNETIC

BUBBLE

MEMORIES

Device Complexity Failure Rates for Memory

Storage Sttucture -Cl ~ and C99

Write Duty Cycle Factor - ~

.00007(h@3

C22

s=

.00001 (N2)3

N2

Number of Bits, N2s 9 x 106

%2
Zw

D=
R/w=

1
Avg. Device Data Rate
Mfg. Max. Rated Data Rate

No. ofReads

~,

per Write

NOTE:
For seed-bubble generators, divide
~
by 4, or use 1, whkhever is greater.

AJlOther Model Parameters

Parameter
Section

C5

5.9
5.10

D=

5-12

Avg. Device Data Rate

Mfg. Max. Rated Data Rate

~,

I
&

MIL+IDBK-217F
S.8

MICROCIRCUITS,

XT

TABLE

FOR ALL

-18

-1!!
.

1
I

5-13

_z...

.,.

.-.

,!

..!-..

MIL-HDBK-217F
I

5.9

MICROCIRCUITS,

C2 TABLE

FOR

ALL

Package Failure Rate for all Mhocircuits

. ~.
Fbnnetb . w%
w/Solder or
Weld S@ Pin
Grid Array

Number of
Functmnal
Pins, Np

Dlf% ti

Gtass

Sea?

(PGA)l, SMT
(Leaded and
Nonkmded)

3
4
6
8
10
12
14
16
18
22
24
28
36
40

1.

c2=2.8

x 10+

3.

C2 = 3.0

x 10-5 (N~l

5.

C2 = 3.6

X 10+

C2

xp

Fk@adcs wtth
Axiaf Leads on

Cans4

50 Mil Centers3

Nonhermetic:
DIPs, m
SMT (Leaded
and
Nonleaded)5

.00047
.00073
.0013
.0021
.0029
.0038
.0048
.0059
.0071
.0096
.011
.014
.020
.024
.048

.00092
.0013
.0019
.0026
.0034
.0041
.0048
.0056
.0064
.0079
.0087
.010
.013
.015
.025
.032
.053
.076
.097

::
128
180
224

(f$J .m
.=

.00022
.00037
.00078
.0013
.0020
.0028
.0037
.0047
.0058
.0083
.0098

.00027
.00049
.0011
.0020
.0031
.0044
.0060
.0079

2.

c~ = 9.0 x 10-5 (N&151

4.

C2 = 3.0

.0012
.0016
.0025
.0034
.0043
.0053
.0062
.0072
.0082
.010
.011
.013
.017
.019
.032
.041
.068
.098
.12

x 10-5 (N~2.01

1.08
(I$J

NOTES:
1.

SMT:

Surface Mount Technology

2.

DIP:

3.

If DIP Seal type is unknown, assume glass

4.

The package failure rate (C2) aocounts for failures associated only with the package itsetf.

Dual In-Line Package

Failures associated with mounting the package

Section 16, Interconnection Assemblies.

5-14

..=

to a circuit board are accounted for in

MIL-HDBK-217F
I

5.1O

MICFIOCJRCUITS,

%E,~L

Envinmment Factor - ~

ANDxO

TABLES

FOR

ALL

Quality Faotors - ~

Environment

%E

%
%

.50

Descrf@on
s~

2.0
4.0

%
NS

4.0

6.0

AC

4.0

%F

5.0

Uc

5.0

*UF

8.0

ARW

8.0

MF

5.0

SF

1:

Procured in fufl accordance

with MIL-M-38!H O,Ciass S

requirements.
2.

Procuraf in full accordance

with MlL-+=3853smd
~a
B lherwo (Cfaae u).

3.

Hybrids: (Procured m Cfaaa

s requirements (Qualily L@vOl
K) of MIL-H~.

1.

Procured in full accordance

with MIL-M-3851 O,class B
requirements.

2.

Procured m fut!accordance
with MIL-I-38535, (Class Q).

3.

Hybrids: Procured to Class B

requirements (QualityLevel

.25

.50

ML

12

c1

220
Learning Factor - XL

Years in Production, Y

s .1
.5
1.0
1.5

7CI
2.0
1.8
1.5

1.0

1-f)of MIL-H-3$534.

1.2
*

XL=

.01 e)(p(s.ss - .35Y)

Y = Years generic cfevice type has been

in production

Fully compliant with all

requirements of paragraph 1.2.1
d MIL-STD-883 and procured to a
MIL drmving, DESC drawing or
dher government approved
documentation. (Does not include
hybrids). For hybrids use custom
screening section below.

2.0

5-15

T**

& --

b--h

-a--s

-d.-

..1

4 ---

.,.

.. . .

,, ..+....

.,.

MIL-HDBK-217F

5.10

MICROCIRCUITS,

%E, %L AND XQ

TABLES

FOR

ALL

Quality Factors (centcf): ~

Group

2*

4*

CdcUlation for Custom Screening Programs

Poinf Va)uatkm
MlL-STD-&
Scmermeat (Note 3)
TM 10IO(Ternperature Cycle, Cond BMinirmsm)and TM 2001
(Constant Acceleratbn, Cord B Minimum) and W 5004 (or 5008

30
36

Th42020Pirld(PaRi0fe

11

TM 5004

50

for Hybrids) (Finaf Electrkals @Te~E%trenws)

and TM 1014
(Seal Test, Cond ~ B, or C) and TM 2009 (External Visual)
TM 1O1O (Terrqmature Cycle, Cond B Minimum) or TM 2001
(Constant Acceleration, Cond B Minimum)
TM 5004 (or 5008 for Hytxlds) (Fhal EkOtca& @ Terrp Extremes)
and TM 1014 (Seal Test, Cond A, B, orC) and TM 2009 (External
visual)
Pre-Bum in Electrkals
TM 1015 (Bum-in B-LeveVS-Level) and TM 5004 (or 5008 for
(Post Burn-in ElectdcaJs @ Te ~ Extremes)
fmpaothJ0ie0

(or 5008 for Hybrids)

~)

37

11

(Final Electricats @ Te~rature

(B Level)
(S Level)

(Note 1)

Extremes)
TM 2010/17

6
7*

(internal Visual)

TM 1014 (Seal Test, Cond A, B, or C)

(Radiography)

TM 2012

TM2009 (ExternalVisual)

10

TM 5007/5013

11

TM 2023

(Note 2)

Bond Pull)

87

ZQ =2+
Z Point

NOT APPROPRIATE
NOTES:
1.
2.
3.
4.
5.

(GaAs) (Wafer Acceptance)

(Non-Destructive

(Note 2)

Valuations

FOR PIJWTIC

PARTS.

Point valuation only assigned if used independent of Grwps 1, 2 or 3.

Point valuatbn onty assigned if used independent of Groups 1 or 2.
Sequencing of tests within groups 1, 2 and 3 must be followed.
TM refers to the MIL-STD-883 Test Method.
Nonhermetk pafis should be used onty in controlled environments (i.e., GB and other
temperaturelhumldtty

controlled environments).

EXAMPLES:
1.

Mfg. performs

Group 1 test and Class B bum-in:

7
-.

Mfg. performs

infernal visual test,

~Q

2 +_

87

seal test and final electrical test:

Other Commercial or Unknown Screening Levels

= 3.1
~Q

fiQ=

2+~

87

= 5.5

10

5-16

.___ .

., .,.

MIL-HDBK-217F

5.11

h81CROClRCU?TS, 7.s DETERMINATION,

(ALL

EXCEPT

HYBRIDS]

Ideally, device case temperatures should be determined from a detailed thermal analysis of the
wmm.
NV*
@wtion temperature is then calculated with the fofbwing relationship:
..

TJ .

Tc +

Tempemture

OKP

TJ

Worst Case Ju~ion

Tc

Case Temperature (oC). If not avaiM#e,

Default Case Tempemture

TC (C)

(3JC =

35

45

60

50

Junction-toese

~C).

(T~

60

the Wlowing default tatlb.

for all Environments

75

75

60

I 35

50

60

45

thermal resistance (CAwtt) for a device soldered into a printed circuit

board. If OK is not available, use a Vabe contained in a specification for the closest
equivalentdevke or use the following tabJe.

Die Area >14,400

Package Type
(ceramic only)

(w

ew

Die Areas

14,400 rni?

8JC (~

Dual-in-Lm

11

28

Flat Package

10

22

Chip Carner

10

20

Pin Grid Array

10

20
70

Can

m~

The maximum power dmtion

realized in a systemappficatiin. If the applied power is

not available, use the maxknum power dissipationfrom the specificationfor the closest
equivalent device.

MIL-HDBK-217F

5.12

MICROCIRCUITS,

T-l

DETERMINATION,

(FOR

This sectbn descrfbes a method for estimating junction temperature

mounted inahybrkfpackage.

HYBRIDS)

(TJ) for integrated circuit dke

A~k~~mti~timormrew-e~-tiW

within a sealed package. Each substrate assetity

consists of active and passive chips with thick orthin

film metallization mounted on the substrate, whii

in turn may have multiple layers of metallization and

dielectric on the surface.

substrate.

The

characteristics.

Figure 5-1 is a cross-sectional

layers within the hybrid are made

The table folbwlng

view of a hybrid with a single multi-layered

up of various

materials

with different

thermal

Figure 5-1 provkles a llst of commonly used hybrid materials with

typical thicknesses and comesponding thermal conductivtties (K). If the hybrid internal structure cannot be
determined, use the following default values for the temperature
1Oc; transistors, 25%;

diodes, 20W.

kalJrm

rise from case to junction: miomdrculs,

are at Tc.

CHIP (A)
LID
CHIP ATJACH (B) .

\~
I

INSULATING
LAYER (C)
m
SUBSTRATE (D)
MATERIAL
THICKNESS, L i
EPOXY (E)

PACKAGE
LEAD

CASE (F)

Figure 5-1:

5-18

Cross-sectional

View

of a Hybrtd with a Single

Multl-Layered

Substrate

MIL-HDBK-217F

5.12

MICROCIRCUITS,
Tvkal

DETERMINATION,

(FOR

HYBRIDS)

Hvbrid Characterktii

Feature
From Figure
5-1

Typkal
Thickness,
+ (in.)

Typical U!wge

Material

T-l

Conductivity,
Ki
.W/in*
() Win

IL
Ki
()()

( in2 oC/W

Chip Device

0.010

2.20

.0045

chip Devbe

0.0070

.76

.0092

Au Eutectic

Chip Attach

0.0001

6.9

.000014

Solder

Chip/Substrate

Attach

0.0030

B/E

1.3

.0023

Epoxy (Dielectric)

Chip/Substrate

Attach

0.0035

BIE

Epoxy (Conductive)

Chii Attach

0.0035

Thck Film Dielectric

Gl=

Alumina

Substrate,

Beryllium Oxide

Substrate,

Kovar

Silicon

.0060

.58

.15

.023

0.0030

.66

.0045

MHP

0.025

.64

.039

PHP

0.025

Case, MHP

0.020

AJuminum

Case,

MHP

0.020

4.6

.0043

Copper

Case,

PHP

0.020

9.9

.0020

NOTE:

Insubthg

Layer

Muftichip Hybrid Package, PHP: Power Hybrid Package

MHP:

6.6
.42

.0038
.048

(Pwc > 2W, TypicaUy)

;1(*)(i)
em=

Number of Material Layefs

Ki

Thermal Conductivity of ith Material

Li

Thiiness

W/in*
~
()

(User Provided or Fmm Table)

of im Material (in) (User Provided or From Table)

Die Area (inz). If Die Area cannot be readity determined, estimate as follows:
A = [ .00278 (No. of DB Active Wire Terminals) + .041#

Estimate TJ

as Folk)ws:
TJ = Tc + .9 (e~

Tc

Hybrid

Case

Temperature

eJ~

= Junction-to-Case

Pf)

(p~

(C). If unknown, use the Tc Defautt Table shown in Section 5.11.

Thermal Resistance (C/W) (As determined above)

Die Power Dissipation (W)

5-19

MIL-HDBK-217F

5.13

MICROCIRC

Example 1:
Given:

UIT&

CMOS

EXAMPLES

Dlgftal Gate Array

A CMOS digitaltiming~
(4048) in an ahborne inhabitedcargo applkxdbn, case temperature
4YC, 75mW power deefpatim
The device is pmwrad with normal marndacturetsscreening
consisting of terrperature oycflng, oomtant aooeleratbn, electrical testing, seal test and external
visual Owpectkm, in the seqMnce given. The oorrponent manufacturer also performs a B-1evel
bum-in folbwed by electrical testing. AU screens and tests are performed to the applicable MILSTD-883 screening method. The package is a 24 pin oeramic DIP with a glass seal. The device
has been manufactured for severaf years and has 1000 transistors.

Section 5.1

c1

.020

1000 Transistor

XT

.29

Determ\ne TJ from Sectbn 5.11

-250

Gates, MOS Cl Table, Digital Column

TJ = 48W + (28@W)(.075w)

= 50W

Determine ~T from Section 5.8, Digital MOS Column.

c~

.011

Section 5.9

?tE

4.0

Section 5.10

7CQ

3.1

Seotion 5.10
Group 1 Tests
Group 3 Tests (Blevel)

50 Points

TOTAL

80 Points

XL

Section 5.10

~=

Example
Given:

2:

[ (.020)(.29)

+ (.011) (4)] (3.1)(1)=

.15 Failure/106 l-lows

EEPROM

A 128K

Flotox EEPROM

that is expected

to have a TJ of 80C

and experience 10,000

readhmite cycles over the life of the system.

The part is procured to all requirements of
Paragraph 1.2.1, MIL-STD-883,
Class B screenin
level requirements and has been in
in a 26 pin D7 P with a glass seal and will be used In an
productbn for three years. tt b packagd
airborne uninhabited oargo application.
~=(ClXT+C2YCE+~)nnL

c1

.0034

Section 5.2

XT

3.8

Section 5.8

C2

.014

Section 5.9

Sectbn

5.2

MIL-HDBK-217F

5.13
~E

5.0

Section 5.10

ICQ

2.0

Section 5.10

XL

1.0

Section 5.10

.38

Section 5.2:

c=

A2B*
%[
~

= f32 = O for Fiotox

No ECC, %ECC = 1

A,=.l,7Ksc

s15KEntry

81 .3.8
(

~~

EXAMPLES

=AIB1+~~~

MICROCIRCUITS,

(Use Equation 1 at bottom of B1 and ~

Tabie)

= 1 B, = (-1)(3.8) = .38

I
I

~=

Example 3:
Given:

[ (.0034)(3.8)

+ (.014)(5.0)+

.38] (2.0)(1)=

.93 Failures/106

Hours

GaAs MMIC

A MA4GM212

Single Pole Double Throw Switch, DC -12 GHz, 4 transistors, 4 inductors, 8

resistors, maximum Input PD = 30 ~,
16 pin hermetio flatpack, maxirrum TCH = 14WC m a

ground benign environment. rne part has been manufactured for 1 year and is screened to
Paragraph 1.2.1 of MIL-STD-883, Class B equivalent soreen.
Seotion 5.4

c1

4.5

Section 5.4, MMIC Table, 4 Active Elements (See Footnote to

.061

Tabie)
Section 5.8, TJ = TCH = 145C

3.0

Section

.0047

Section 5.9

%E

.50

Section 5.10

XL

1.5

Section 5.10

7FQ

2.0

Section 5.10

~=

NOTE:

[(4.5)( .061) (3.o) + (.0047)(.5)]

UrhOwn

(1.5)(2.0)

Application

= 2.5 Failures/106

Hours

The passive elements are assumed to contribute negligibly to the overall device failure rate.

Example 4:
Given:

5.4,

Hybrid

A linear muttichip hybrid driver in a hermetically sealed Kovar package. The substrate is aiumina
there are two thi@ film dielectric layers. The die and substrate attach materials are
conductive epoxy and soider, respectively. The application environment is navai unsheltered,
65C case temperature and the device has been in production for over two years. The device is
and

5-21

MIL-HDBK-217F

5.13

MICROCJRCUJTS,

EXAMPLES

screened to MIL-STD-883, Method 5008, in accmkwxe

The hybrid contahw the followhg components:
Active Components:

Passive Components:

LMl 06 Bipolar Co~rator-er

Die (13 Transistors)
LM741A Bipolar Operational Arnpliir Die (24 Transistor)

112222
17

S NPN Transistor
Si PNP Tmnsistor
Si General Purpose Diodes
-

Cerwlb c~
Capacitors
Thick FItm Resistors
+ -~E)

1.

with Table Vlll, Class B requirements.

%F ~

Sectbn

5.5

Estimate Active Device Junction Terrperatures

If limited informationis available on the specific hybtid materials and construction characteristics
the defautt case-to-junction temperature rises shown in the introduction to Section 5.12 can be
used. When detailed information becmmes available the following Section 5.12 procedure
shoukf be used to determine the junction-to-case (tlJc) thermal resistance and TJ vatues for
each component.

,,c

w
A

(Equatbn

1)

~
()()

Li

Layer

Ki

Fgure 5-1 Feature

in2 OC/W
Silicon Chip
Conductive

Epoxy

.0045

.023

Two Dielectric Layers

Alumina Substrate

.039

Solder Substrate Attachment

.0023

Kovar Case

TJ =

5-22

(2)(.0045)

Die Area= [ .00278 (No. Die Active Wire Terminals) + .0417J2

Tc + OJC D

(Equation 3)

.009

(Equation 2)

MIL-HDBK-217F

5.13

LM 106
No. of Pins

LM741A
14

8
I

Si NPN

PNP

.33

.35

.6

.6

Area of Chpjin.2)

.0041

.0065

.0025

.0025

(w

J (~)

2.

lSi

Diode

EXAMPLES

Source
Vendor Spec. Sheet

Power Dissipation,
pD (W)

e~

MICROCIRCUITS,

II

.42

CircaJitAnalysis

.0022

Ey.

2 Above

30.8

19.4

50.3

50.3

56.3

Equ. 1 Above

75

72

95

95

89

Ew.

3 Above

Calculate Failure Rates for Each Corrqmnent:

A)

LM106 DM, 13 Transistors (from Vendor Spec. Sheet)

~=[c,q+c~Yc~l~Qq
Because
P

Section 5.1

C2 = O;

Cl XT

(.01)(3.8)(1)(1)

~Q

XL

~T:

= .038 Failures/106

LM741 Die, 23 Transistors.

B)

5.8;

s-h

~Q,

ZL

Default tO 1.0

Hours

Use Same Procedure as Above.

Cl XT Z* XL = (.01)(3.1)(1)(1)

= .031 Failures/106

Hours

c) Silicon NPhl Transistor, Rated Power= 5W (From Vendor Spec. Sheet), Vc#VCEO

= .6,

Linear Application
~

D)

s8CtiOn 6.3; ZQ, ~E Defautt to 1.0

=
=

%PAR%KQE

.0023 Failures/l 06 Hours

(.00074)(3.9)(1

.5)(1 .8)(.29) (l)(1)

Silicon PNP Transistor, Same as C.

.0023 Failures/106

E)

Hours

Silicon General Purpose Diode (Anabg),

Construction.

Vottage Stress=

%T%~nQ%
(.0038)(6.3)(.29)(1)(1)(1)

60%, Metallurgically Bonded

Section 6.1; nQ, XE Default to 1.0

.0069 Failures/l 06 Hours

5-23

,.

.. . .

MIL-HDBK-217F
[

5.13

MICROCIRCUITS,

EXAMPLES

F) Ceramic ChipCapacitor, Voltage Stress= 50%.,

A CASE for the Hybrid, 1340 pF, 125C Rated

Tenp

G)

=
=
=

Section 10.1 1; xQ, fiE Default to 1.0

%%V%)E
(.0028)(1.4)(1)(1)
.0039 Faitures/106

Hours

Thiok Film Resistors, per kwtructbns in Section 5.5, the contribution of these devices is
considered insiinifiint
relative to the overall hybrid failure rate and they maybe ignored.

[XbJc~c](l+2@ItF~q
6.0

Section 5.10

5.8

Section 5.5

Section 5.10

Section

[ (1)(.038)+

(1)(.031)+

+ (2)(.0069)

+ (2)(.0039)

1.3 Failures/l

5-24

06 Hours

(2) (.0023)+

5.10

(2) (.0023)

](1 + .2(6.0))

(5.8) (1)(1)

f
... .

. . . . . ..

. .

...

. .

.. .. .-

..!.

MIL-HDBK-217F

6.0

DISCRETE

SEMICONDUCTORS,

INTRODUCTION

The semiconductor tmnsistor, dbde and opto-electronic devke sections present the faWe rates on
cmstwtbn.
An mafytbd -I
of the talbre rate is also presented for each
the basis ofdevketypeand
devkes require different failure rate
devke category.
The various types of dkcrete semkmductor
models that vary to some degree.
The models apply to single devices unless otherwise noted. For
mh**v-rn
as@k_t~~ti
h~ti5.5*Mb
Md.
The applicable MIL specification for transistors, and optoelectronk
quality levels (JAN, JANTX, JANTXV) are as defined in MIL-S-19500.
The t~p9mtWt3

faCtOr (%T) is based on the devke

jumtbn

devices is MIL-S-19500.

temperature.

Junctbn

The

temperature

should be oomputed based on worse case power (or maxhmm power c!ksipatbn) and the device junction
to ease thermal resktanoe. Determinatbn of junction temperatures is explained in Section 6.14.
I
I

Refererwe
section.

28 should be consulted for further detailed information on the mode!s appearing

in this

6-1

MIL-HDBK-217F
I

DIODES,

6.1

LOW

FREQUENCY

SPECIFICATION
MlL-S-l 9500

DESCRIPTION
@
Frecpxmqr D-s:
General Putpse Analog, Switch~
Fast Rewvery, f%wer RecWer, Tmsient S~r,
Current
Regulator, Vol@e Regulator, Voltage Reference

Lp =

Failures/l

&##czQzE

OG

Base Failure Rate - &

Diode Type/Appiicatbn

Temperature

General PuqxM Analog

switching
Power Redfiir, Fast Recovery
Power Rectifier/Schottky
Power Diode
Power Rectifier with
HigiI Voltage Stacks
Transient Suppressor/Vanstor
Current Reguiator
Voltage Regulator and Voltage
Reference (Avaianche
and Zener)

.0038
.0010
.069
.0030
.0050/
Junction
.0013
.0034
.0020
I
i

(General Purpose Analog, Switching, Fast Recovery,

Poul r Rectifier, TI dent Su-pgm isor)
XT
TJ ~C)
XT
TJ (C)

XT =

TJ -

6-2

1.0
1.2
1.4
1.6
1.9
2.2
2.6
3.0
3.4
3.9
4.4
5.0
5.7
6.4
7.2
8.0

((

exp -3091

105
110
115
120
125
130
135
140
145
150
155
160
165
170
175

9.0
10
11
12
14
15
16
18
20
21
23
25
28
30
32

1
1
TJ + 273 -Z&

JunctionTemperature (C)

))

Factor - q

(VOitag. Regulator, Voitqo Rdormce,

h cunUWRncddYW)
.---- . ... . -~---.
#
%T
TJ (C)
J (=)

Terrperature Factor - XT

25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100

Hours

25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100

1.0
1.1
1.2
1.4
1.5
1.6
1.8
2.0
2.1
2.3
2.5
2.7
3.0
3.2
3.4
3.7

%T =

exp

-1925
((

TJ

105
110
115
120
125
130
135
140
145
150
155
160
165
170
175

1
TJ +273-=

JunctionTemperature (oC)

3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
6.4
6.7
7.1
7.5
7.9
8.3
8.7

1
))

.,

+.

MIL-HDBK-217F

DIODES,

6.1

7CS

Transient Suppressor,
Voltage Regulator, Voltage
Reference, Current
Regulator

Quality

tcQ

JANTXV

0.7

JANTX

1.0

JAN

2.4

Lower

5.5

Plastic

8.0

1.0

All Others:
v~ s .30

0.054

.3 c v~ s .40

0.11

.4< Vs s .50

0.19

.5<v#60

0.29

.6< Vs s .70

0.42

.7< V~ s .80

0.58

.8< V~ s .90

0.77

.9<v#.

1.0

oo

Environment Factor - ZE
Environment

For All Except Transient Suppressor, Voltage

Regulator, Voltage Reference, or Current
Regulator
7CS=

FREQUENCY

Quality Factor - X(

Electrical Stress Factor - ZS

Stress

LOW

.054

~s = v~2.43

(Vs

s .3)

(.3 < v+

1)

Voltage Applied
~~ = Voltage Stress Ratio =
Voltage Rated
Voltage is Diode Reverse Voltage

7tE

GB

1.0

GF

6.0

9.0

N~

9.0

Nu

19

Ic

13

IF

29

*UC

20

UF

43

RW

24

SF

.50

MF

14

ML

32

CL

320

Contact Construction Factor - xc

Contact Construction

Metallurgically Bonded

I@
1.O

I
Non-Metallurgically Bonded and
Spring Loaded Contacts

2.0

6-3

MIL-I+DBK-217F

6.2

HIGH FREQUENCY

DIODES,

(MICROWAVE,

SPECIFICATION
MlL-S-l 9500

RF)

DESCRIPTION
Si IMPA7T; Buk Effect, Gunn; Tunnel, Back; Mixer, Detector,
PIN, Schottky; Varactor, Step Recovery

Failures/l 06 Hours
Tenqxmtum

Base Failure Rate - ~

Dbde Type

h
TJ

Si lMPAIT (s 35 GHz)
Gunn/Bulk Effect
Tunnel and Bd (including
Mixers, Detectors)
PIN
Schottky Barrier (including
Detectors) and Point Contact
(200 MHzs Frequenqs 35 GHz)
Vamctor and Step Recovery

.22
.18
.0023
.0081
.027
.0025

Temperature Factor - q
TJ (C)
25
30
35
40
45
50
55
60
65
70

75
80
85
90
1:

XT =

(All Types
XT

Excq)t

IMPA7T)
TJ (oC)

1.0
1.1
1.3
1.4
1.6
1.7
1.9

105
110
115
120
125
130
135

4.4
4.8
5.1
5.5
5.9
6.3
6.7

2.1
2.3

140
145

7.1
7.6

2.5
2.8
3.0

150
155
160

8.0
8.5

3.3
3.5
3.8

165
170
175

4.1

exp -2100

1
TJ +273-~

((
TJ =

6-4

9.0
9.5
10
11

JunctionTemperature (C)

1
))

Factor- %T

~)
1.0
1.3
1.8
2.3
3.0
3.9
5.0
6.4
8.1

25
30
35
40
45
50
55
60
65
70
75
80
85

16
19

z
100

24
29
35

T
TJ

105
110
115
120
125
130
135
140
145
150
155
160
165
170
175

10
13

=
=

42
50

84
99
120
140
160
180
210
250
280
320
370

((

exp -5260

TJ + 273 -Zz
))

JunctionTemperature (C)

Application

Factor - fiA

Diodes Application
Varactor, Voltage Control

~A
.50

Varactor, Mu?tip!ier

2.5

All Other Diodes

1.0

,,.

.- .-.

,.

MI-HDBK-217F

6.2

Power

DIODES,

HIGH

FREQUENCY

(MICROWAVE,

RF)

Quality Factor - ~
(Scha ky)

Rating Factor - XR

Rated Power, Pr (Watts)

Quaiity

PIN Diodes

p~ < 10

JANTXV

.50

10 < Pr s
IOO<Pr

100

1.3

Sl~

1000 <Pr

2.0

S3000

All Other Diodes

JANTX

1.0

JAN

1.8

Lower

2.5

2.4

1.0

All Other Diodes

Pthl Diodes

Iqq = .326 k(Pr) -.25

Plastic

For high frequency part classes notspecified

to

MlL-S-l 9500 equipmentqualityclasses are

defined ae devices meeting ths Same
requirementsas MlL-S-l 9500.

XR = 1 .0

Environment Factor - z=

Quaiity Factor - nQ

Environment

(All Ty pas Except Scl

Quality

~E

1.0

GF

2.0

5.0

Ns

4.0

GB

JANTXV

.50

.50

JANTX

1.0

JAN

5.0

Nu

11

Lower

25

Ac

4.0

Plastic

50

IF

5.0

*UC

7.0

For high frequency part classes not spedfied to

Ml L-S-l 9500 equipmentqualhyclassesare
defined as devbes meeting the same
raqulrementsas MlL-S-l 9500.

..

UF

12

RW

16

SF
MF

.50
9.0

ML

24

CL

250

6-5

MIL-HDBK-217F

6.3

TRANSISTORS,

LOW

FREQUENCY,

BIPOLAR

DESCRIPTION
NPN (Frequency<
PNP (Frequency<

SPECIFICATION
MIL-S-19500

Ap =

AXR%ZQXE

%?

Failures/l

06 I-loufs
Application Factor - %A

Base Failure Rate - ~

Type

NPN and PNP

Application

h
.00074

TJ

(*)

XT

25
30
35
40
45
50

1.0
1.1
1.3
1.4
1.6
1.7

55
60

;::

%
75
80

5::
2.8
3.0

E
95
100

:::
3.9
4.2

200 MHz)
200 MHz)

T J (C) -

1.5

Linear Ampliiicatiorl

.70

Switching

%T

105
110
115
120
125

4.5
4.8
5.2
5.6
5.9

130
135
140
145
150
155
160
165
170
175

6.3
6.8
7.2
7.7
8.1
8.6
9.1
9.7
10
11

Power Rating Factor - ZR

..
Rated Power (Pr, W~S)

exp -2114

1
1
TJ + 273 -=

((
TJ =

Junclbn Temperature (C)

.43

Pr = .5

.77

Pr =1.0

1.0

Pr = 5.0

1.8

Pr = 10.0

2.3

Pr = 50.0

4.3

P~ = 100.0

5.5

10
I

))

Rated Powers .lW

%-. *
~ - (Pr).37

Rated Power >.1 W

6-6

?tR

Pr~ .1

Pr -500.0
XT =

%A

.l@

MIL-HDBK-217F

6.3

Voltage

o<v

VCEO

~~

#.3
@.5

BIPOLAR

Environment

%E
1.0

GF

6.0

.21

9.0
9.0

.16

.4<v

FREQUENCY,

GB
.11

.3<v~s.4

LOW

Erwironment Factor - ~F

Stress Factor - YCS

Applied vCE/Rabd

TRANSISTORS,

.5c

V~S.6

.29

Ns

.6<

V#.7

.39

19

AC

13

IF

29

AM

20

UF

43

RW

24

.7<v

@.0

.8<

V#.9

.9<

v~ s 1.0

.54
.73
1.0
~~

,045 exp (3.1(vS))

v~

Applied VCE / Rated VGEO

VCE

Voltage, Collector to Emitter

CEO

Voltage, Colleotor to Emitter, Base

(o<v#l.o)

SF

Open

.50

MF

14

ML

32

CL

320

Quality Factor - ZQ
Quality
JANTXV

7c~
.70

JANTX

1.0

JAN

2.4

Lower

5.5

Plastic

8.0

6-7

MIL-HDBK-217F

6.4

TRANSISTORS,

LOW

FREQUENCY,

SPECIFICATION
MIL-S-19500

SI

FET

DESCRIPTl
ON
N-Channel and P-Channel Si FET (Frequencys

400 MHz)

Ap = kb7cT7cA7tQ7cE
Failures/l 06 Hours

Application Factor - ~A

Base Failure Rate - ~

Transistor Type

Application
(Pr, Rated Output Power)

I :::5I

MOSFET
JFET

Linear Amplifkxtion
(Pr < W)
small S@rlal Switching

.70

Temperature Factor - n~
T ~ (C)

TJ (C)

*T

25
E
40
45
50
55
60
65
70
75
80
85
90
95
100

1.0

105

1.1
1.2

110
115
120
125
130
135
140
145
150
155
160
165
170
175

1.4
1.5
1.6
;::
2.1
2.3
2.5
2.7
u
3.4
3.7

Power FETs
(Non-linear, Pr z

XT

::;
4.5
4.8
5.1
5.4
5.7
6,0
6.4
6.7
7.1
7.5
7.9
8.3
8.7

2<

nT

exp

- 1925
((

TJ

Junction

1
TJ + 273

2.0

5<Pr<~W

4.0

50 s Pr < 250W

8.0
10

Environment Factor - x=

Environment

xc

GB

1.0

GF

6.0

GM

9.0

NS

9.0

1
-izii
))

Temperature

Pr<5W

Pr > 25OW

2W)

(C)

1
Quality Factor - ~
Ouality

7CQ

JANTXV

.70

Nu

19

Alc

13

IF

29

*UC

20

*UF

43
24

JANTX

1.0

*RW

JAN

2.4

SF

Lower

5.5

MF

14

Plastic

8.0

ML

32

CL

320

.50

b-U

1=-IO

=1

MIL-HDBK-217F

6.5

Lp = kb7cT7TQ7cEFailures/l

OG Hours

Base Failure Rate - ~

Quality Factor - ~

All Unijuntilon

.0083
I

~T

100

nT

TJ

TJ (C)

1.0
1,1
1.3
1.5
1.7
1.9
2.1
2.4
2.7
3.0
3.3
3.7
4.0
4.4
4.9
5.3

exp

-2483
((

Junction

Temperature

%Q

JANTXV

.70

JANTX

1.0

JAN

2.4

Lower

5.5

Plastic

8.0

XT

105
110
115
120
125
130
135
140
145
150
155
160
165
170
175

1
TJ + 273

Quality

Temperature Factor - XT

25
30
35
40
45
50
55
60
65
70
75
80
85
90
95

UNLIUNCTION

DESCRIPTION
Unijunction Transistors

SPECIFICATION
MIL-S-19500

T ~ (C)

TRANSISTORS,

5.8
6.4
6.9
7.5
8.1
8.8
9.5
10
11
12
13
13
14
15
16

Environment Factor - XE

Environment

%E

GB

1.0

GF

6.0

%/l

9.0
9.0

1
-m

Nu

19

AC

13

IF

29

Uc

20

*UF

43

*RW

24

))

(C)

SF

.50

MF
I

ML

32

CL

6-9

<1

MIL-HDBK-217F

TRANSISTORS,

6.6

LOW

NOISE,

HIGH

FREQUENCY,

BIPOLAR

DESCRIPTION
Bipolar, Micmvave RF Transistor
(F~ency
>200 MHz, Power< lW)

SPECIFICATION
MIL-S-19500

kp =

b~z#&QKE

Failures/l 06 Hours

Applkatlon
Note: The model applies to a single die (for multiple die use the hybrid model). The model does
apply to ganged transistors on a single die.
Power Rating Factor - Xn
..
Base Failure Rate - &
R~6d ~
(Pr, W~S)
%R

I
1

,18

All Types
I

Temperature Factor - q
TJ (C)

XT

TJ W)

XT

25

1.0

105

30
35

1.1
1.3

110

4.8

40
45
50
55

;:;
1.7

115
120
125
130

5.2
5.6
5.9
6.3
6.8

60
65
70

;::
2.3
2.5

:Z
145
150

75
80
85

2.8
3.0
3.3
3.6
3.9
4.2

155
160
165
170
175

E
100

XT =

exp -2114

7KR..43

P~ S.lw

Pr >.lW

= (Pr )37

7.2
7.7

Voltage
Applied VCE/R~ed
o<v

1
TJ +273-=

JunctionTemperature (oC)

1
))

.3 <V=s

VCEO

%
.11

.4

.16

#.5

.21

.5<

V#.6

.29

.6<

V8S.7

.39

.7<

VSS .8

.54

.73

.8<v~s.9
.9<

1.0

v~ s 1.0

.045 exp (3.1(vS))

v~

Applied VCE / Rated VC~

v=

Vottage, Collector to Emitter

CEO

Voltage, Collector to Emitter, Base

Open

Stress Factor - x~

#.3

.4<v

((

TJ =

4.5

0.1
8.6
9.1
9.7
10
11

.43
.55
.64
.71
.77
.83
.88
.92
.96

Pr < .1
.l<Pr
5.2
.2< PrS.3
.3< Pr $.4
.4< PrS.5
.5< Pr~.6
.6< PrS.7
.7< PrS.8
.8< Pr <.9

(o< v~ s 1.0)

. ..

,,

!.,

MIL-HDBK-217F

6.6

TRANSISTORS,

LOW

NOISE,

HIGH

FREQUENCY,

BIPOLAR

Environment Factor - ~F

Quality Factor - ~
7tQ

Quality

.50

JANTXV

Environment

~E

GB

1.0

GF

2.0

JANTX

1.0
GM

5.0

JAN

2.0

Ns

4.0

Lower

5.0

Nu

NOTE: For these devices, JANIXV quatii class must

inciude IR Scan for die attach and scraan for barrier

19

Alc

4.0

%F

5.0

Uc

7.0

layer pinhotes on gold metallized devices.

UF

12

RW

16
.50

SF
MF

9.0

ML

24

CL

250

6-11

MIL-HDBK-217F

6.7

TRANSISTORS,

HIGH

POWER,

HIGH

SPECIFICATION
M! L-S-19500

BIPOLAR

DESCRIPTION
Power, Mkrowave, RF Bipolar Transistors
(Average Power 21 W)
%=

%%XAXM%ZE

ailres/loOs

Base Failure Rate - ~

.
I

FREQUENCY,

Output Power (Watts)

50
100
.050
.067
.060
.080
.086
.11
.12
.16
.17
.23
.25

Frequency

1.0

(GHz)

.038
.046
.065
.093
.13
.19

s 0.5
;
3
4
5

lb

5.0
.039
.047
.067
.095
.14
,19

10
.040
.048
.069
.098
.14
.20

F=

.032 exp(.354(F) + .00558(P))

300
.20
.24
.35

200
.12
.14
.20
.28

Frequency (GHz)

400
.36
.42

500
.62
.74

600
1.1
1.3

OUtp@POwer W)

NOTE: Output power refers to the power level for the overall packaged device and not to indwidual transistors within the
package (if more than one transistor is ganged together). The output power represents the power output from the active
device and should not account for any duty cycle in pulsed applications. Duty cycle iS accounted for when determining A.

Temperature Factor - XT

Temperature

(Gnlri
Mdalli7atinn\
\ -Vs (VCE/BVCE@
!.-

TJ (C)

s .40
.10
.12
,15
.18
.21
.25
.29
.34
.40
.45
.52

sl 00
110
120
130
140
150
160
170
180
190
200

T = .1 exp -2903
((
(VS < .40)

. .

..-

. .

/Aliiminllm
,,,
,,

.50

.20
.25
.30
.36
.43
.50
.59
.68
.79
.91
1.0

.30
.37
.45
.54
.64
.75
.88
1.0

- z (VS - .35) eXP -2903

.55
.40
.49
.59
.71
.85
1.0
1.2
1.4
1.6
1.8
2.1

1.2
1.4
1.6

..--.,,--

.,

W..

s .40

.45

.50

.55

Sloo
110
120
130
140
150
160
170
180
190
200

.38
.57
.84
1.2
1.7
2.4
3.3
4.4

.75
1.1
1.7
2.4
3.4
4.7
6.5
8.8
12
15

1.1
1.7
2.5
3.6
5.1
7.1
9.7
13
18
23
30

1.5
2.3
3.3
4.8
6.8
9.5
13
18

))
TJ ~ 273

?:;

1
TJ +273

-5794

$:
40
1

nT = ?.55 (VS - .35) exp

1
-m

VCE / BVCES

VCE

Operating Voftage (volts)

BVCES

Collector-Emitter Breakdown
Voftage with Base Shorted to
Emitter (Volts)

TJ

Peak Junction Temperature (C)

-5794

1
1
TJ + 273 - ~

((
(.4 < Vs s .55)

))

v~

))

((
(VS s .40)

((
(.4 < v~ s .55)

6-12

.,

TJ (~)

XT = .38exp

1
-

.F,

Factor - nT
Matalli7atinn\

Vs (VCE/BVCES)

.45

1
TJ +273

,?,

,
))

v=

VCE / BVCES

VCE

Operating Voltage (Votts)

BVCES

Collector-Emitter Breakdown
Voltage with Base Shorted to
Emitter (Votts)

TJ

Peak Junction Temperature (C)

I
-+

MIL-HDBK-217F

6.7

TRANSISTORS,

HIGH

POWER,

HIGH

ZQ

Quality

Duty Factor
N/A

.50

JANTXV
.46

s 1%

Pulsed

5!%
1 0%+40
15%
20%
25%
2 30%

.70
1.0
1.3
1.6

JANTX

1.0

JAN

2.0

1.9

Lower

5.0

2.2
N07E: For these devices, JANTXV qualityclass
must IncludeIR Scan for die attach and screenfor

7tA

7.6, CW

n~

.06 (Duty Factor

barrier layer pinholes on gold metaltized devices.

0/0)

.40,

Pulsed

Environment

Matching

BIPOLAR

Quality Factor - ~

Application Factor - ~A
Application

FREQUENCY,

Network

Factor - fiM

Matching

~M

Input and Output

1.0

Input

2.0

None

4.0

Factor - zcb

Environment

~E

GB

1.0

GF

2.0

GM

5.0

Ns

4.0
11

Nu

4.0

Ic

5.0

IF

7.0

*UC

12

UF

16

*RW

.50

SF

9.0

MF
ML

24

CL

250

6-13

m-a

-l....

_._.

--

--

--

--

AAM

.-

.-.

MIL4-IDBK-217F
.
TRANSISTORS,

6.8

HIGH

FREQUENCY,

GaA,

SPECIFICATION
MIL-S-19500

FET
DESCRIPTION
Galls Low Noke, Driver and Power FETs (2 lGHz)

Base FaihJre Rate - ~

<.1

.054
.083
.13
.20
.30
.46
.71

1< F<1o,

%=
F-

Frequency (GHz)

.13
.20
.30
.47
.72
1.1

::

.052
.0093 exp(.429(F)

.084

.&6
.10
.16
.24
.37

+ .486(P))

4sFs1o,
p.

.14
.21
.32
.50
.76
1.2
1.8

-.

--

.052
.052
.052
.052
.052
.052
.052
.052

1
4
5
6
7
0
9
10

Average Output Power (Watts)

1
.5

.1

.36
.56
.85

.96
1.5
2.3
3.5

;::

P<.1
.ls

Ps6

Average Output Power (Watts)

The average output power represents the power output from the active device and should not account for any duty
cycle in pulsed applications.

Temperature Factor - m

Tc (=)

1.6
2.1
$:;
4.0
4.9
5.9
7.2
8.7
10
12
15

%T

24
28
33
38
44
50
58
66

115
120
125
130
135
140
145
150
155
160
165
170
175

E
97

110
120
140
150

;7

TC =

U-14

TC (C)
1.0
1.3

25
30
35
40
45
50
55
60
65
70
7s
80
85
90
95
100

Application Factor - XA

((

Xp 4485

&3-L

Channel Temperature (C)

298
))

Application (Ps 6W)

All Low Power and Pulsed

~A
1
4

P = Average Output Power (Watts)

MIL-HDBK-217F

6.8

Matching

Network

Factor

HIGH

~M

Environment
%3

Input and Output

1.0

Input Only

2.0

None

4.0

~Q

.50

1.0

5.0

NS

4.0

Qualiiy Factor- ICQ

~E

2.0

%c

JANTXV

GaAs

GF

Quality

FREQUENCY,

Environment Factor - xcL

- ~M

Matching

TRANSISTORS,

*UC
*UF
RW

JANTX

1.0

SF

JAN

2.0

MF

Lower

5.0

11
4.0
5.0
7.0
12
16
.50
7.5

ML

24

CL

250

FET

MIL-HDBK-217F

6.9

TRANSISTORS,

HIGH

FREQUENCY,

SPECIFICATION
MIL-S-19500

Si

FET
DESCRIPTION
Si FETs (Avg. Power< 300 mW, Freq. >400 MHz)

= &Tz@E

Failures/l OGHours

Base Failure Rate - ~

Quality Factor - ~

Transistor Type

I
I

A~

MOSFET

Quality

.060

JANTXV

.023

JANTX

1.0

JAN

2.0

Lower

5.0

.50

JFET

Temperature Factor - m
TJ (C)

XT

1.0
1.1

25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100

T
TJ

1.2
1.4
1.5
1.6
1.8
2.0
2.1
2.3
2.5
2.7
3.0
3.2
3.4
3.7

=
=

exp

((

- 1925

7tT

105
110
115
120
125
130
135
140
145
150
155
160
165
170
175

1
TJ + 273

Junction Temperature (C)

3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
6.4
6.7
7.1
7.5
7.9
8.3
8.7

Environment

))

xc

GB

1.0

GF

2.0

GM

5.0

N~

4.0

11

AIC

4.0

IF

5.0

Uc

-E

Factor - ~=
L

Environment

7.0

*UF

12

RW

16
.50

SF
MF

6-16

9.0

ML

24

CL

250

MIL-HDBK-217F

6.10

THYRISTORS

AND

SCRS

DESCRIPTION
Thyristors
SCRS, Triacs

SPECIFICATION
MIL-S-19500

Failures/l 06 Hours
Base Failure Rate - ~
I

Device Type

Current
Lb

All Types

Rated Forward Current

ffms (Amps)

.05
,10
.50
1.0
5.0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
175

Temperature Factor - q
TJ (%)

TJ(%)
1.0
1.2
1.4
1.6
1.9
2.2
2.6
3.0

25
30
35
40
45
50
55
60
65
70
75
80
85
90
95

:::
4.4

5.0
5.7
6.4
7.2
8.0

100

TJ

Factor

- ~R

.0022
I

~T

Rating

exp

((

-3082

8.9
9.9
11
12
13
15
16
la
19
21
23
25
27
30
32

105
110
115
120
125
130
135
140
145
150
155
160
165
170
175

1
TJ + 273

Junction Temperature (C)

1
-m

+rms

))

.30
.40
.76
1.0
1.9
2.5
3.3
3.9
4.4
4.8
5.1
5.5
5.8
6.0
6.3
6.6
6.8
7.0
7.2
7.4
7.6
7.8
7,9

($rmJ40
RMS Rated ForwardCurrent (Amps)

6-17

MIL-HDBK-217F
.

. .

THYRISTOf?S

6.10

AND

SCRS

Voltage Stress Factor - XC

w

Environment Factor - XC
L

Environment

V~ (Blocking Voltage Applied/

BlockingVottage Rated)
v~ s

Xs

.30

.10

%E

1.0

GF

6.0

.3<v

#.4

.18

9.0

.4<v

#.5

.27

NS

9.0

.5<

V#.6

.38

.6<

V#.7

.51

.7<

V@.8

.8<

V~S.9

NU

19

.65

Alc

13

.82

IF

29

1.0

.9 < v~ s 1.0

7CSD.1O

(VS s 0.3)

Uc

20

UF

43

%J

24
.50

SF
~s = (Vs)

1.9

(VS> 0.3)

MF

14

ML

32

cL
Quality Factor - ZQ
Quality

ZQ

JANTXV

0.7

JANTX

1.0

JAN

2.4

Lower

5.5

Plastic

8.0

6-18

320

. .

MIL-HD6K-217F

6.11

OPTOELECTRONICS,

DETECTORS,

DESCRIPTION
Photodetectors,

SPECIFICATION
MIL-S-19500

ISOLATORS,

Opto-isolators,

EMITTERS

Emitters

Failures/l 06 Hours
Quality Factor - ZQ

Base Faiture Rate - &

OptoelectfonkType

Photodetectors
Photo-Transistor

.0055
.0040

Photo-Diode
Opto-isolators
Photodbde Output, Si@e Device

.013

Photodarlington Output, Single Device

,013

Light Sensitive Resistor, Single Devioe

.0064

Photodiode Output, Dual Device

.0033

Phototransistor Output, Dual Device

.017

Photodarlington Output, Dual Device

.017

Lght Sensitive Resistor, Dual Device

.0086

Emitters
Infrared Light Emitting Diode (IRLD)

.0013
.00023

LightEmittingDiode (LED)
Temperature Factor - ~T
XT
1.0
1.2
1.4
1.6
1.8
2.1
2.4
2.7
3.0
3.4

25
30
35
40
45
50
55
60
65
70

JAW

.70

JANTX

1.0

JAN

2.4

Lower

5.5

Plastic

8.0

.0025

Photot:aosistor Output, Single Device

TJ (C)

YCQ

Quality

Environment Factor - n
Environment
GB

1.0

GF

2.0

GM

8.0

Ns

5.0

75
80
85
90
95
100
105
110
115

-2790

TJ

Junction Temperature (C)

3.8
4.3
4.8
5.3
5.9
6.6
7.3
8.0
8.8

4.0

IF

6.0

Uc

6.0

UF

8.0

RW

.50

SF
MF

c1

17

9,0
24

;
I

450

<

TJ +273-~

((
=

12

Ic

ML
exp

XT

TJ (C)

ttT =

~E

))

6-19

MIL-HDBK-217F
I

OPTOELECTRONICS,

6.12

ALPHANUMERIC

SPECIFICATION
MIL-S-19500

DISPLAYS

DESCRIPTION
~numedc
Display

&TQzE

Failures/l 06 Hours
Tenqwature

Base FaihJre Rate - &

Number

+)

Charactws
1
1 whgk

Chip

2
2

Chip

W/b@C

.00043

.00026

.00047
.00066

.00030
X)0043
.00047
.00060
.00064
.00077
.00081
.00094
.0011
.0013
.0015
.0016
.0018
.0020
.0021
.0023
.0025
.0026

.00090

3
3 Wlhxjo chip
4
4 w/Logic Chip
5
6
7
8
9
10

.0013
.0013
.0017
.0018
.0022
.0026
.0030
.0034
.0039
.0043
.0047
.0052
.0056
.0060
.0065

:;
13
14
15

TJ (C)

~T

25
30
35
40
45
50
55
60
65
70

1.0
1.2
1.4
1.6
1.8
2.1
2.4
2.7
3.0
3.4

%T =

TJ

exp

((

-2790

Factor - q
TJ (%)

%T

75
80
85
90
95
100
105
110
115

3.8
4.3
4.8
5.3
5.9
6.6
7.3
8.0
8.8

TJ + 273

1
-ZE
))

Junction Temperature ~C)

Environment Factor - xc
~ - .00043(C)+
~.

.00009+

~C,

Environment

for Segment Displays

.00017(C)+

2.0

c=

Number of CharaAers

%-

.000043 for Displays with a Logic Chip

8.0

0.0 for Displays without Imgic Chip

Ns

5.0

NOTE: The numbar of characters in a display is the

number of characters mntained in a _
sealed
package. For example, a 4 character display
comprising 4 separately packaged single characters
mounted together would be tine
character dispiays,

not 1-four character display.

Quality Factor - ~
I

1.0

~C, Diode Array Displays

12

Nu

AC

4.0

IF

6.0

%c

6.0

*UF

8.0
17

Quality

lcQ

JANTXV

0.7

JANTX

1.0

JAN

2.4

Lower

5.5

Plastic

8.0

.50
MF

9.0
24

ML

450

Ci

6-20

----

------

--------

MIL-HDBK-217F

6.13

OPTOELECTRONICS,

LASER

DIODE

DESCRIPTION
laser Diodes with Optical Flux Densities

SPECIFICATION
MIL-S-19500

<3 MW/cr#

Cufrmt <25 ~

amt Fofward

Failures/l 06 Hours
Forward Cument Factor, I
q

Forward Peak Current (Anps)

Temperature Factor - XT
TJ (C)
1.0

25
30
35
40
45
50
55
60
65
70
75

TJ

0.17
0.21
0.62
1.0
1.6
2.1
2.6
3.0
4.8
6.3
7.7
8.9

1.3

1.7
2.1
2.7
3.3
4.1
5.1
6.3
7.7
9.3

(1)68

Fonnmrd Peak Currant (Amps), I $25

NOTE: For VariaMa Current Souroes, use the Initial

Current Value.

Application

exp

((

-4635

TJ + 273

- ~

x~

1
))

Pulsed

JunctionTemperature(C)

4.4
.32
.45
.55
.63
.71
.77
.84
.89
.95

.1
.2
.3
.4
::
.7
.8
.9

Quality Factor - ~
Quality

Factor %A

Duty Cydo

Application
XT

.050
.075
.1
.5
1.0
2.0
3.0
4.0
5.0
10
15
20

1-

Hermetic Package

1.0

Nonhermetic with Faoet Coating

1.0

Nonhermetic without Facet Coating

3.3

~A = 4.4, CW
%A = ~

Cycle

0-5,f%.i-d

NOTE: A duty cyclaof one in pulsed application

represents the maximum amount it can ba driven in
a pulsad mode. This is different from wntinuous
wave applicationwhich will not withstandpulsed

oparatingIavels on a continuousbasis.

-..

-----

--

MIL-HDBK-217F
.

..

OPTOELECTRONICS,

6.13

Power ~radation

LASER

DIODE
Environment Factor - fiE

Factor - np

Ratio P~P~

%p
.50
.53
,56
.59
.63
.67
.71
.77
.83

0.00
.05
.10
.15
.20
.25
.30
.35
.40
.45

.91
1.0
1.1
1.3
1.4

.50
.55
.60
.65
.70
.75
.80
.85
.90
.95

1.7
2.0
2.5
3.3
5.0
10

Environment
GB
GF

1
2 (1 -&

PS

s .95

Ps =

Rated Optical Power Output (rnW)

Pr

Required Optical Power Output (mW)

NOTE: Each laser diode must be replaced when power

output falls to Pr for fai lure rate prediction to be valid.

6-22

ttE
1.0
2.0

GM

8.0

Ns

5.0

Nu
Ac
IF
%c
UF
RW

12
4.0

6.0
6.0
8.0
17

.50

SF
MF
ML

lcp =

9.0
24

450

9
1

MIL-HDBK-217F

DISCRETE

6.14

Idealty, device case temperatures should be detetined

Wl@me~.
D8Vb #.IndOn te~-m
iS then ~M~
TJ = Tc +

SEMICONDUCTORS,

TJ

DETERMINATION

from a detailed thermal anatysis of the

with tb folbwing relationship:

e~p

where:
TJ

Junction Temperature(%)

TC

Case Temperature (~).

tf no thermal analysis exists, the defautt case

temperatures shown in Table ~1 should be assumed.

Junction-to-Case Thermal Resistance (CAN). This parameter should be
determhwd from vendor, military specffkation sheets or Table 6-2, whiohever is
greater. It may also be estimated by taking the mclpmcal of the reconvnended
&wa!lng Ieve!. For examp!e, a devtce derating reconxnendatton of .16 W
wou!d
restAina6K
of6.250CAN.
lf6wcannot
bedetermhwd assurnea O~vabeof
7oc/w.
P=

Device Worse Case Power Diss@ation (W)

The models are not applicable to devices at overstress conditions. If the calculated junction temperature
is greater than the maximum rated junction temperature on the MIL slash sheets or the vendors
specifications, whichever is smaller, then the device is overstressed and these models ARE NOT
APPLICABLE.

Table 6-1:

Default

Caee

Temperatures

Environment

(Tc)

for All Environments

TC (C)

35
45
50

%
Ns

45

Nu

50

AC

60

IF

60

Uc

75

UF

75

*RW
SF

60
35

MF

50

ML

60

CL

45

MIL-HDBK-217F

6.14

Table

DISCRETE

6-2:

SEMICONDUCTORS,

Approximate

Juriction-to-Case
Devices

Package Type
TO-1
TO-3
TO-5
TO-8
TO-9
TO-12
TO-1 8
TO-28
TO-33
TO-39
T041
TO-44
T046
TO-52
TO-53
TO-57
TO-59
TO-60
TO-61
TO-63
To-66
TO-71
TO-72
TO-83
TO-89
TO-92
TO-94
TO-99
TO-126
TO-127
TO-204
TO-204AA

T i

OJC (w
70
10
70
70
70
70
70
5
70
70
10
70
70
70
5
5
5
5
5
5
10
70
70
5
22
70
5
70
:
10
10

DETERMINATION

Thermal

In Varfous

Resistance

(6JC)

for

Semiconductor

Package Sizes

Package Type
TO-205AD
TO-205AF
TO-220
Do-5
D07
Do-9
DO-13
DO-14
Do-29
Do-35
DO-41
DO-45
DO-204MB
DO-205AB
PA-42A,B
PD-36C
PD-50
PD-77
PD-180
PD-319
PD-262
PD-975
PD-280
PD-216
PT-2G
PT-6B
PH-13
PH-16
PH-56
PY-58
PY-373

Ok (%A#)
70
70
5
5
5
10
5
5
10
5
10
10
10
5
70
5
70
70
70
70
70
70
70
70
70
70
70
70
70
70
70
70
70

When available, estimates must be based on military specification sheet or vendor vaiues, whichever
is higher.

6-24

OJC

MIL-HDBK-217F

6.15

DISCRETE

SEMICONDUCTORS,

EXAMPLE

Example
Given:

Silicon dual transistor (complementary), JAN grade, rated for 0.25 W at 25C, one side
onty, and 0.35 W at 25C, both sides, with TM
= 2000C, operating in linear service at
55C case temperature in a sheltered naval environment. Side one, NPN, operating at
0.1 W and 50 percent of rated voltage and side two, PNP, operating at 0.05 W and 30
percent of rated voltage. The device operates at iess than 200 MHz.

Since the device is a bipolar dual transistor operating at low frequency (c200 Miiz), it falls into the
Transistor, Low Frequency, Bipoiar Grwp and the appropriate modei is given in %ction 6.3. Since the
device is a dual device, it is necessary to compute the faiiure rate of each side separately and sum them
OJc
k
ufk~wn,
OJc
= 70%/w
~i~
be
a~md.
t~e{k.
Also, si~
Based on the given information, the following model factors are determined from the appropriate
shown in Section 6.3.

tables

.00074
2.2

s@O1, TJ=TC+eJC

2.1

Side 2, TJ = 55+ 70(.05) = 59C

%55+70(

.1).62c

1.5
.68

Using equation shown with XR tabie, Pr = .35 W

.21

Side 1, 5070 Voltage Stress

.11

Side 2, 3(I?% Voitage Stress

2.4
9

=
=

(.00074)(2.2)(1
.011 Faiiures/106

.5)(.68) (.21)(2.4)(9)

+ (.00074)(2.1)(1

.5)(.68) (.1 1)(2.4)(9)

Hours

6-25

MIL-HDBK-217F

TUBES,

7.1

ALL TYPES

EXCEPT

TWT AND

MAGNETRON

DESCRIPTION
All Types Except Traveling Wave Tubes and Magnetrons.
Includes Receivers, CRT, Thyratron, Crossed Field Amplifier,
Pulsed Gridded, Transmitting, Vidicons, Twystron, Pulsed
Klystron, CW Klystron

(Includes
Tube Type

= kb7cLnE

Both

Transmitting
Triode, Peak Pwr. s 200 KW, Avg.
Pwr, s 2KW, Freq. g 200 MHz
Tetrode & Pentode, Peak Pwr.
s 200 KW, Avg. Power 5 2KW,
Freq. S 200 KW
If any of the above limits exceeded
Vidicon
Antimony Trisulfide (Sb2S3)
Photoconductive
Material
Silicon Diode Array Photoconductive
Material
Twystron
VA144
VA145E
VA145H
VA913A
Klystron, Pulsed
4KMP1OOOOLF
8568
L3035
L3250
L3403
SAC42A
VA842
Z501OA
ZM3038A

06 Hours

Base Failure Rate - ~

and Wearout
Failures)
Rando[
Tube Type
Lb

Receiver
Tnode, Tetrode, Pentode
Power Rectifier
Thyratron
Crossed Field Amplifier
QK681
SFD261
Pulsed Gridded
2041
6952

Failures/l

Klystron, Low Power,

(e.a Local Oscillator)

5.0
10
50
260
150
140
390

75
100

250

51
48
850
450
490

230
43
230
66
69
93
100
18
150
190

If the pulsed Klystron of interest is not listed above,

use the Alternate Pulsed Klystron Ab Table on

the following page.

Klystron, Continuous Wave*

3K3000LQ
3K50000LF
3K21OOOOLQ
3KM300LA
3KM3000LA
3KM50000PA
3KM50000PA1
3KM50000PA2
4K3CC
4K3SK
4K50000LQ
4KM50LB
4KM50LC
4KM50SJ
4KM50SK
4KM3000LR
4KM50000LCI
4KM50000LR
4KM170000LA
8824
8825
8826
VA800E
VA853
VA856B
VA888E

30

9.0
54
150
64
19

110
120
150
610
29
30
28
15
38
37
140
79
57
15
130
120
280
70
220
65
230

If the CW Klystron of interest is not listed above,

use the Alternate CW Klystron ~ Table on the

following page.

MIL-I-IDBK-217F

7.1

TUBES,

ALL

TYPES

EXCEPT

TWT

AND

MAGNETRON

Attemate* Base Failure Rate for Pulsed Klystrons - A

Learning

F(GHz)

Zs!&!L

.2

.4

.6

.8

1.0

2.0

.01
.30

16
16
16
17
18
19
21
22
31

16
16
17
17
20
22
25
28
45

16
17
17
18
21
25

16
17
18
18
23
28

16
17
18
19
25
31

16
18
21
22
34
45

;:
25
28
51
75

30

35

40

63

110

34
60

40
75

45
90

75
160

.80
1.0
3.0
5.0
8.0
10
25

4.0

T (years)

;:
30
34

Operating Frequency in GHz, 0.2s Fs 6

10

2.3

>3

+2=

1.0

10(T) -2, 1 sT<3

=
=

10, TsI
1,T23

Numtw of Years since Introduction

to Field Use

Peak Output Power in MW, .01 s Ps 25 and

P-

<1

2.94 (F)(P) + 16

6.0

Factor - XI

P s 490 F-295
See previous page for other Klystron Base Failure
Rates.

Environment

Factor - nE

Environment

GB
T

Aftemate Base Failure Rate for CW Klystrons - ~

GM

3K!!!!L
0.1

14

N~
30
31
32
33
34
35
45
55
70
80

;;;
5.0
8.0
10
30
50
80
100

1.0

GF

31
32
33
34
35
36
46
56
71
81

33
33
34
35
37
38
48
58
73

34
34
35
36
38
39
49
59

38
39
40
41
42
43

47
48
49
50

57
57
58

66
66

Nu

8.0
24

%c

5.0

IF

8.0

%c

6.0

UF
RW

12
40

SF

0.5P + .00046F + 29

P=

Average Output Power in KW, 0.1 s Ps 100

and Ps 8.0(10) 6( F)-17

Operating Frequency in MHz,

300s Fs8000

See previous page for other Klystron Base Failure

Rates.

.20

MF

22

ML

57

CL

1000

MIL-HDBK-217F

7.2

TUBES,

TRAVELING

WAVE

DESCRIPTION
Traveling Wave Tubes
Xp = &E

Failures/l

06 Hours
Environment Factor - XF

Base Failure Rate - &

Power (W)
100
500
1000
3000
5000
8000
10000
15000
20000
30000
40000

.1

Environment

Frequency (G-Hz)
4
6
8
10

11
12 13
16
20 24
16
20 24
11
12 13
12 14
16
20 24
11
172125304465
12
13 14
12
13 15
18
22 26
19
23 20
13
14 16
14~5~62024293551
15
16 18
22
26 32
17
18 20
24
29 35
20
22 24
29
36 43
25
27 30
36
43 53

14

18

29
29
29

42
42
43

61
62
62

32
33

46
49

39
43
52
64

56
62
76
93

68
72
75
83
91
110
140

GB

1.0

GF

3.0

GM
Ns

11(1.00002)P

p.

Rated Power in Watts (Peak, if Pulsed),

.001< P s 40,000

(1.l)F

14
6.0

21

%c

10

IF
Uc

%=

~E

14
11

UF

18

RW

40
.10

SF
MF

22

ML

66

CL

1000

Operating Frequency in GHz, .3s Fs 18.

If the operating frequency is a band, or two different

values, use the geometric mean of the end point
frequencies when using table.

/-3

MIL-HDBK-217F

7.3

TUBES,

MAGNETRON
DESCRIPTION
Magnetrons, Pulsed and Continuous Wave (CW)
7c@@E

%=%

Failures/l

06 Hours

Base Failure Rate - ~

.1
1.4
1.9
2.2
2.8
3.1
3.5
4.4

Qs!!?!m
.01

.05
.1
.3
.5
1
3

Pulsed

.5
4.6
6.3
7.2
9.0
10
11
14

1
7.6
10
12
15
17
19
24

5
24
34
39
48
54
62
77

10
41
56
64
80
89
100
130

20
67
93
110
130
150
170
210

Magnetrons:

.73 ~pl.20

%) =

Frequency (GHz)
30
40
50
91
130
110
120
150
180
140
180
210
180
220
260
200
240
290
230
280
330
350
280
410

9(F)

Operating Frequency in GHz,

.1 s Fs 100

Output Power in MW,

.ol<p~5

.44

.50
.55
.61

0.4

.66
.72
.78
.83
.89
.94

0.5
0.6
0.7
0.8
0!9
1.0
=

0.44 + 0.56R

Radiate Hours/Filament

Hours

Factor - mr
nc

GB

1.0

GF

2.0

GM

4.0

N~

15

Nu

47

*IC

10

IF

16

*UC

12

UF

23

*RW

80

1.0

nu

90
200
280
320
400
440
510
630

Environment
7CU

80
190
260
290
370
410
470
580

A@8

Environment

0.0
0.1
0.2
0.3

70
170
230
270
330
370
420
530

CW Magnetrons (Rated Power < 5 KW):

Utilization Factor - q I
Utilization (Radiate Hours/
Filament Hours)

60
150
210
240
300
330
380
470

.50
Construction
Construction

Factor - m

XC

MF

43

ML

133

c,
CW (Rated Power< 5 KW)

1.0

Coaxial Pulsed

1.0

Conventional Pulsed

5.4

/-4

2000

100
220
300
350
430
480
550
680

MIL-HDBK-217F

8.0

LASERS,

INTRODUCTION

. .
, i.e., those items
The models and failure rates presented in thk section apply to ~
wherein the Iasing action is generated and controlled. In addition to laser peculiar Items, there are other
assernbhes used with lasers that contain electronic parts and mechanical devices (pumps, valves, hoses,
etc.). The failure rates for these parts should be determined with the same procedures as used for other
electronic and mechanid
devices in the equipment or system of which the laser is a part.
The laser failure rate models have been developed at the functional, rather than piece part level
because the available data were not sufficient for piece part model devebpment.
Nevertheless, the
laser functional models are included in this Handbook in the interest of completeness.
These laser
models will be revised to include piece part modek and other laser types when the data become available.
Because each laser family can be designed using a variety of approaches, the failure rate rnodets have
been structured on three basic laser functbns whii
are common to most laser families, but may differ in
the hardware knplernentation of a given function. These functions are the Iasing rneda, the laser pumping
mechanism (or pump), and the coupfing method.
Examptes of media-related hardware and reliability Influencing factors are the solid state rod, gas, gas
pressure, vacuum integrity, gas mix, outgassing, and tube diameter.
me electrical discharge, the
flashlamp, and energy level are exarr@es of pump-related hardware and reliabilii influencing factors. The
coupling function reliability influencing factors are the Q switch, mirrors, windows, crystals, substrates,
coatings, and level of dust protection provided.
Some of the laser models require the number of active optical surfaces as an input parameter. An active
opticai surface is one with which the laser energy (or beam) interacts. internally reflecting surfaces are not
counted. Figure 8-1 below illustrates examples of active optiil suffaces and count.

Tot*

wloclw9 Mnuf
cho ActhmQxkalsurb20

Pdult

.
b@u

Figure

8-1:

*am
Examples

of Active

Optical

Surfaces

8-1

MIL-HDBK-217F

8.1

LASERS,

HELIUM

AND

ARGON
DESCRIPTION
Helium Neon Lasers
Helium Cadmium Lasers
Argon Lasers

= MED,AZE

+ COUPLING

n E Failures/l

06 Hours

..
Environment Factor - n=

Lasing Media Failure Rate - kMEDIA

Type

MEDIA

~E

Environment

.30

GB
He/Ne

84

He/Cd

228

Argon

457

GF

1.0

GM

4.0

N~

3.0

Nu

4.0

%c
%
Coupling Failure Rate - ~0[
----- lpi ,NG
...
Types
%OUpLING
Helium

Argon

Uc

4.0
6.0
7.0

UF

9.0

RW

5.0
.10

SF

NOTE: The predominant argon laser failure

mechanism

is related to the gas media (as reflected

in XMEDIA; however, when the tube is refilled

periodically (preventive maintenance) the mirrors
can be expected to
(as part of ~OUpLIN@
deteriorate after approximately 104 hours of
operation if in contact with the discharge region.
COUPLING

8-2

is negligible for helium lasers.

MF

3.0

ML

8.0

CL

NIA

MIL-HDBK-217F
-

8.2

LASERS,

CARBON

DIOXIDE,

SEALED

DESCRIPTION
C02 Sealed Continuous Wave Lasers

Lasing Media FaiWe Rale - ~DM

Tube Current (rnA)

10
20
30
40
50
100

-.
%UEDIA
240
930
1620
2310
3000
6450

~S

Surfaces

0s

- Numbr

of Active Optical SUrfaces

NOTE: Only *ive optical surfaoss ars

counted. An active optical surfaca is one with

%tEDIA - 69(1)-0
l= Ttitimti(mA),

Active OptW

whiohth.laser anorgyorbwn~
Internallyreflecting surfaces are not oounted.
Sae Fquro 8-1 for exampleson datorminingthe

10s Is15O

number of optical surfaces.

Gas Overfill Factor = *

C02 Overfill Percent (%)

%0

Environment Faotor - XE

%-1

1.0

Environment

%E
.30

25

.75

%3

50

.50

1.0

GM

4.0

Ns

3.0

-.01 (%0Overfill)

Overfill percent is based on the psrwnt increase

Nu

4.0

ovsr the o@imum002 partialpssure which is

(llm=l
normalIyintherango ofl.5t03Tm

AC

4.0

mm Hg Prassure) for mostsealad C02 lasers.

IF

6.0

*UC

7.0

*UF

9.0

RW

5.0

Peroent of BaJlast
Vohmetric Increase

o
50
100
150
200

sF

1.0
.58
.33
.19
.11

.10

hu~

3.0

ML

8.0

WA

n~ - (1~) (% Vol. Inc./l 00)

U-3

MIL-HDBK-217F

8.3

LASERS,

CARBON

DIOXIDE, FLOWING
DESCRIPTION
C02 Flowing Lasers

+J = &JpLIN&OS

x E Failures/l OGHours

Environment

Coupling Failure Rate - XCWPL,NG

Power (KW)

%OUpLING

.01
.1

1.0

Factor - XE

fiE

Environment

.30

GB

300

GF

1.0

GM

4.0

Ns

3.0

NU

4.0

*IC

4.0

Beyond the 1KW range other glass failure mechanisms

b~in to predominate and alter the ~OUpLING

IF

6.0

%OUPUNG
P _ Aver-

3WP

PowerOutputin KW, .01 s Ps 1.0

values.

It should also be notedthat C02 flowinglaser optical

devices are the primary source of failure occurrence.

A tailored optical cleaning preventive maintenance
program on optic devices greatty extends iaser fife.

*UC

7.0

*UF

9.0

*RW

5.0
.10

SF

Optical Surface Factor - ~S

Active Optical Surfaces

3.0

ML

8.0

CL

0s

XOS - Number of Active Opticai Surfaces

NOTE: Oniy active optical surfaces are counted.
An active opticai surface is one with which the iaser
energy or beam interacts. Internally reflecting
surfaces are not counted. See Figure 81 for
exampies on determining the number of opticai
surfaces.

8-4

MF

NIA

,..

MIL-HDBK-217F

LASERS,

8.4

STATE,

SOLID

ND:YAG

DESCRIPTION
Neocfymium-Ytt~m-AbminurnGamet

AND

RUBY

ROD

(ND:YAG) Rod Lasers

Ruby Rod Lasers

+)= ( p~~ +MEDIA

+ 16.3 xc~s)

fXannn
1

--------

The empiricalfmula

IKnmtnn
,.
... ~.-.. Ftaehla~}
.

Fla=hlarrmm\

---

. .

.-w.

.-,

Ktypton lamp is:

~p

= @~)

(PPS) 2000
[

k
(d,k)

8058

PPS

is the repetition pulse rate in pulses per

1[km] Failures/l

is the fkwhlamp or flashtube input energy

per pulse, in joules. Its value is determined
from the actual or desgn input energy . For
values less than 30 @Jes, use Ej = 30.
Default value: E = 40.
j

is the average input power in Idbwatts.

Default value: P =4.

is the flashlamp or flashtube arc length in

inches. Defautt value: L -2.

Zca

is the woling factor due to various cooling

media immediately surrounding the flashlamp
or fkht~.
~~L
= 1 for a~ air or inert
gas cooling. n-

-.1

for all liquid

cooled.

is the flashlamp or flashtube arc length in

inches. Default value: L = 2.

Meda Failure Rate - ~EDiA

is the truncated pulse width in

microseconds. Use t -100 microseconds
for any truncatd pulse width exceeding 100
microseconds. For shotier duration pulses,
pulse width is to be measured at 10 percent
of the maximum current amplitude. Defautt
value: t = 100.

designs. Defautt va!ue: ~c~L

is the cooling factor due to various cooling

media immediately surrounding the
flashlamp or flashtube, ~~~L
= 1.0 for
any air or inefl gas cooling, ~C@L

= .1 for

ail liquid cooled designs. Default value:

COOL

06 Hours

is the flashlamp or flashtube inside

diameter, in millimeters.
Default value: d = 4.

xc~L

for

evalutad herein are the continuouswave

(CW) type and are most widely used for
commercial solid state applkations. They
are approx-imatety7mm in diameter and 5 to
6 inches brig.

second. Typbal values range between 1

and 20 pulses per second.

.~v,

is the failure me contributionOf the krypton

flashlamp or flashtube. me flashlamps

kpUMp

k the failure rate contribution of the xenon

flashlamp or flashtube. The flashlamps
evaluated herein are linear types used for
military solid state laser systems. Typical
defautt model parameters are given below.

Ej

- [625][,0($9

] ~nm,

@lJfvIp

..-.

The empirical formula used to determine *MP

used to determine ~UMp

(Failures/1@ Hours) for Xenon lamps is:

+WMP

06 Hours

Pump Pulse Failure Rate - kpUM@

Pump Pulse Failure Rate - kpuMp

~E Failures/l

Laser Type

MEDIA

ND:YAG
)

R~

= .1, liquid

o
_

(3600) (PPS) [43.5 F2052~

PPS

is the number of pulses per second

is the energy density in Joules per cm. z/pulse

over the cross-sectional area of the laser
beam, which is nominalty equivalent to the
cross-sectional area of the laser rod, and its
value is determined from the actual design
parameter of the laser rod utilized.

= .1, Iquid cooled.

NOTE: ~MEDIA is negligible for ND:YAG lasers.

8-5

MIL-HDBK-217F

LASERS,

8.4

SOLID

STATE,

ND:YAG

%
1

Rk3#ltml#c&&s ~-r~d.
~

BOUOWB
provided over
tin.

Mln&nalprmXw$Orwdwing opaning,
makltananoe, mpdr, and testing.
Bellows prddad Ovw Optkat train.

30

duringopening,
Minimal pr~ons
mdntorumca, repair,and ta8drg. No

60

tx?lbw, prOvWxfOvu ~

RUBY

ROD

Environment Factor ~E

CouplingCleadinassFactor - -z
CleardinessLovd

AND

train.

Environment
GB

Optioal Surfaoe Factor - ~S

Active Optical Surfaces

~s

0s

= Numbr of ActiveOptical Surfaces

NOTE: Only activeoptioalsurfmmsare munted.

Anactiveopticalsurfaceis one withwhid the iaser
energyor beam interacts.Internallyreflecting
surfacesare notcxxmted.See Figure8-1 for
examphw on dettinlng
surfaces.

8-6

the number of OPUcat

.30

GF

1.0

GM

4.0

Ns

3.0

Nu

4.0

Ac

4.0

AF

6.0

%c
NOTE: Mhoughsodod qsternstendmberelMle
OnoeCompatible
materialshavebeenSeh30ted
and
proven,extremecaremuststtltbe takento prevsnt
theentranoeof partkdatesduringmanufacturing,
field ftashlamp repkemmt, or routine maintenance
repair. Contamhatkm is the major cause of solid
state lasermatfurx3ion, and spedal provlsbns and
vigilanoe must oontirwalty be provided to maintain the
deanllness level required.

%E

7.0

UF

9.0

RW

5.0

SF

.10

MF

3.0

ML

8.0

CL

N/A

,,,

MIL-HDBK-217F

9.0

RESISTORS,

INTRODUCTION

This section includes the active resistor specificationsand, in addition, some eider/inactive specifications
are included because of the large number of equipments stilt in field use which oontain these parts.
The Established Reliability (ER) resktor family generaity has four qualification failure rate levels when
tested per the requirements of the appikabie specification. These quaiiitbn
failure rate levels difier by
a factor of ten (from one level to the next). However, field data has shown that these failure rate levels
differ by a factor of about only three, hence the ~ values have been set accordingly.
The use of the resistor modek requires the calculation of the electrfcat power stress ratio, Stress =
-~
Pow@r/~t~~er,orPr~9.16
for variable msktors. The models have been structured
such that derating curves do not have to be used to find the base failure rate. The rated IXWer for the
stress ratb is ~al
to the full nominal rated power of the resistor. For example, a MlL-R_
resistor has
the foiiowing derating cume:

100

80
60
40

20

0
40

80

120

AMBlENT TEMPERATURE
DEGREES CELSIUS

Figure

9-1:

MIL-Ft-39006

IN

Deratlng

Curve

This particular resistor has a rating of 1 watt at 70C arrtknt, or below. If Itwere behg used in an ank#ent
temperature of 10OC, the rated power for the stress calculation would still be 1 watt, ~ 45% of 1 watt (as
read off the curve for 100*C). Of course, while the deratlng cuwe k not needed to determine the base
failure rate, it nmst still be observed as the maxinum operating condtbn. To aid in detenMing if a resistor
is being used within rated conditions, the base failure rate tables show entries up to certain combinations
of stress and temperature.
If a given operating stress and temperature point faits in the blank portion of
the base failure rate table, the resistor is ovemtmssed.
Such wisappfbatbn wouid require an anatysis of
the circuit and operating conditions to bring the resistor within rated conditions.

9-1

-----

MIL-I+DBK-217F

9.1

RESISTORS,

FIXED,

SPECIFICATION
MIL-R-39008
MIL-R-11

COMPOSITION
DESCRIPTION
Resistors, Fixed, Composition (Insulated), Established Reliability
Resistors, Fixed, Composition (Insulated)

STYLE
RCR
RC

Xp s kbXRXQnE Failures/l OGHours

Base Failure Rate - ~

Quality Factor - ~

stress-

TA (%)
0
10
20
30
40
50
60

.00007
.00011
.00015
.00022
.00031
.00044
.00063
.00090
.0013
.0018
.0026
.0038
.0054

;:
90
100
110
120

Quality

.3

.5

.7

.9

.00010
.00015
.00022
.00031
.00045
.00066
.00095
.0014
.0020
.0029
.0041
.0060

.00015
.00021
.00031
.00046
.00067
.00098
.0014
.0021
.0031
.0045
.0065

.00020
.00030
.00045
.00066
.00098
.0014
.0021
.0032
.0047

.00028
,00043
.00064
.00096
.0014
.0021
.0032
,0048

.1

7CQ

.03

0.1

0.3

1.0

MlL-R-l 1

5.0
15

Lower

Environment Factor - ~E

%=4.5x

10-gexp

12

Environment

(W))exff?(-))

T=

Ambient Temperature (C)

s=

Ratio of Operating Power to Rated Power

~E

GB

1,0

GF

3.0

GM

8.0

Ns

5.0

Nu
Resistance Factor - ~R
Resistance Range (ohms)
<.l

>.l

Mtol

>l.OMtol
>1OM

~R
1.0

M
OM

1.1

13

Ic

4.0

IF

5.0

%c

7.0

*UF

11

RMI

19

1.6

SF

2.5

MF

11

ML

27

CL

490

.50

9-2

-- -

1-

r.llauLe

Lila

aullclllu

LAG

u&uw*,

.y

*u

b..*--

~-----

MIL-HDBK-217F

9.2
SPECIFICATION
MIL-R-39017
MIL-R-22684
MIL-R-55182
MIL-R-105O9

RESISTORS,

FIXED,

FILM

DESCRIPTION
Fixed, Film, Insulated, Established Reliability
Fued, Film, Insulated
Fixed, Film, Established Reliability
Fixed, Film, High Stability

STYLE
RLR
RL
RN (R, C, or N)
RN

Failures/l OG Hours
Base Failure Rate - ~

Base Failure Rate - ~

[MIL-R-1 0509 and MIL-R-551 82)

IMIL-R-22684
and MIL-R-990171
.....-
-- ----...._ .._ --- .
I

TA (%)

.1

.3

.5

.7

.00059

.00073

.00089

.0011

.0013

10

.00063

.00078

.00096

.0012

.0014

.9

20

.00067

.00084

.0010

.0013

.0016

30

.00072

.00090

.0011

.0014

.0018

40

.00078

.00098

.0012

.0016

.0019

50

.00084

.0011

.0014

.0017

.0022

60

.00092

.0012

.0015

.0019

.0024

70

.0010

.0013

.0017

.0021

80

.0011

.0014

.0018

.0024

90

.0012

.0016

.0021

.0027

100

.0013

.0018

.0023

110

.0015

.0020

.0026

120

.0017

.0023

TA (Z:
o

.0027

.0019

140

.0022
-

~=3.25x

S =

104 .xp(*)exf(=))

.3

.00061

.5

.00074

.00091

.7

.9

.0011

.0014

10

.00067

.00082

.0010

.0012

.0015

20

.00073

.00091

.0011

.0014

.0017

30

.00080

.0010

.0013

.0016

.0019

40

.00088

.0011

.0014

.0017

.0022

50

.00096

.0012

.0015

.0020

.0025

60

.0011

.0013

.0017

.0022

.0028

70

.0012

.0015

.0019

.0025

.0032

80

.0013

.0016

.0021

.0028

90

.0014

.0018

.0024

.0031

F
.0040

100

.0015

.0020

.0026

.0035

.0045

110

.0017

.0022

.0029

.0039

.0051

120

.0018

.0024

.0033

.0043

.0058

150

z~~
.0024

.0033

=;

0065

160

.0026

.0036

170

.0029

130
140

130

.1

~=

5x10-5exp

.0045

((=YXPP
(-))
35

T.

Ambient Temperature (C)

s.

Ratio of Operating Power to Rated Power

Ambient Temperature (oC)

Ratio of Operating Power to Rated Power

NOTE: Do not use MlL-R-l 0509 (Characteristic B)

below the line. Points below are overstressed.

9-3

MIL-HDBK-217F

9.2

RESISTORS,

FIXED,

FILM

Resistance Factor - ~n,,

Resistance Range (ohms)

lc~

Environment Factor - ~
b

Environment

<.l M

1.0

GB

1.0

>().lMtOIM

1.1

GF

2.0

>l.OMtol

OM

8.0

1.6

Ns
>IOM

2.5

QuaJ-~ Factor - ~
Quality

lt~

.03

Nu

4.0
14

*IC

4.0

IF

8.0

*UC

10

*UF

18

%+/v

19

0.1

0.3

MF

10

1.0

ML

28

MlL-R-l 0509

5.0

MIL-R-22684

5.0

Lower

9-4

~E

15

SF

c,

.20

510

MIL-HDE3K-217F

9.3
SPECIFICATION
MIL-R-11804

RESISTORS,

RD

0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
&
%=

.3

.0089
.0090
.0092
.0094
.0096
.0098
.010
.010
.010
.011
.011
.011
.012
.012
.012
.013
.013
.014
.014
.015
.015
.016

.0098
.010
.010
.010
.011
.011
.011
.012
.012
.012
.013
.013
.014
.014
.014
.015
.016
.016

stress
.5

QuaIii
-

.011
.011
.012
,012
.012
.013
.013
.014
.014
.015
.015
.016
.016
.017

Factor - ~

Quality
.7

.9

.013
.013
.014
.014
.015
.015
.016
.016
.017

.015
.015
.016
.017
.017

%Q
!

I
I
\

MIL-SPEC

Lower

II

3.0

Environment Factor - x=
Environment
GB

2.0

GF
GM

NU

202
(-

1.0

10

5.0

Ns

7.33 x 10-3 exp

(*)2)

,
xp((~)

POWER

OGHours

Base Failure Rate - ~

.1

FILM,

DESCRIPTION
Fued, Film, Power Type

STYLE

Ap = kb7cRz*7cE Failures/l

TA (%)

FIXED,

17

*IC

6.0

IF

8.0

*UC

14

*UF

18

RW

25

.50

SF

(=)8)3

T=

Ambient Temperature (C)

MF

14

s=

Ratio of Operating Power to Rated Power

ML

36

660

Resistance Factor - ZR
Resistance Range (ohms)

x~

lo to 100
> 100to
>lOOKtol
>lM

1.0
100K
M

I
I

1.2

1,3
3.5

9-5

---

MIL-HDBK-217F

9.4

RESISTORS,

NETWORK,

SPECIFICATION
MIL-R-83401

FIXED,

FILM

STYLE
Rz

~=
Temperature

DESCRIPTION
Resistor Networks, Fixed, Film

.00006 ~ ZNRZQXE Failures/106 Hours

Factor - XT
.

Quality Factor - ~
Quality

TC (Z)

1.0
1.3
1.6
1.9
2.4
2.9
3.5

25
30
35
40

45
50
55
60

80
85
90
95
100
105

110
115
120
125

4.2
5.0

%
75

6.0
7,1

8.3
9.8
11
13
15
18
21
24

MIL-SPEC
Lower

Envirmment

2.0

GM

8.0

N~

4.0

Uc

TC

TA + 55 (S)

TA

Ambient Temperature (C)

Operating Power
Package Rated Power

NR = Number of Film Resistorsin Use

I
Do not include resistors that are not used.

4.0
8.0
9.0

UF

18

RW

19

.50

MF

14

ML

28

c,

Number of Resistors Factor - ~NR

9-6

14

SF

Any device operating at TC > 125C is overstressed.

NOTE:

~E

GF

IF

If Tc is unknown, it can be estimated as

follows:

Factor - n=

Case Temperature (C)

NOTE:

1.0

Ic

s=

GB

Nu

Tc

I
I

Environment

27
31

7CQ

510

MIL-HDBK-217F

9.5
SPECIFICATION
MIL-R-39005
MIL-R-93

RESISTORS,

FIXED,

WIREWOUND

DESCRIPTION
Fixed, Wlrewound, Accurate, Established Reliability
Fixed, Wirewound, Accurate

STYLE
RBR
RB

Xp = lbnRZQnE Failures/l OGHours

Quality Factor - ~

Base Failure Rate - ~

str13s .1

.3

.0033
.0033
.0034
.0034
.0035
.0037
.0038
.0041
.0044
.0048
.0055
.0065
.0079
.010
.014

.0037
.0038
.0039
.0040
.0042
.0043
.0046
.0049
.0053
.0059
.0068
.0080
.0099
.013

TA (W)
0
%
30
40
50
60
70
80
90
100
110
120
130
140

.5
.0CM5
.0047
.0048
.0050
.0052
.0055
.0059
.0064
.0070
.0079
.0092
.011
.014
.018

.7
.0s7
.0059
.0062
.0066
.0070
.0075
.0081
.0089
,0099
.011
.013
.016
.021
.028

Quality

7tQ

.030

.10

.30

.9
.0075
.0079
.0084
.0090
.0097
.011
.012
.013
.015
.017
.020
.025
.033

1.0

MIL-R-93

5.0

Lower

15

Environment Factor - XE

Environment
~.

.0031 exp

(T+273)loexpp(T;g3)
398

)15

GB
GF

T-

Ambient Temperature (oC)

GM

s=

Ratio of Operating Power to Rated Power

N~

Resistance
Resistance

>lOOKtol
>IM

~R
1.0

Up to 10K
> 10Kto

Factor - ~R

Range (ohms)

100K
M

1.7
3.0
5.0

2.0
11
5.0

Nu

18

AC

15

IF

18

*UC

28

*UF

35

%w

27

.80

SF
MF

14

ML

38

c,

610

9-7

I
4

,, . .

,,

MIL-HDBK-217F

9.6

RESISTORS,

FIXED,

WIREWOUND,

SPECIFICATION
MIL-R-39007
MIL-R-26

POWER

STYLE

DESCRIPTION
Fixed, WireWound, Power Type, Established RelkbNty
Fixed, Wirewouruf, Power Type

hb7c#Q7t~ Failures/l OGHours

Base Failure Rate - &.

Stress
TA (C)

.1

.3

.5

Resistance Factor - ZR
.7

.9

1:
20
30
40

.0042
.0045
.0048
.0052
.0056

.0062
.0068
.0074
.0081
.0089

.0093
.010
.011
.013
.014

.014
.016
.017
.020
.022

.021
.024
.027
.031
.035

50
60
70
80
90
100

.0081
.0066
.0072
.0078
.0085
.0093

.0097
.011
.012
.013
.014
.016

.016
.017
.020
.022
.025
.028

.025
.028
.032
.037
.042
.048

.ti

110
120
130
140
150

.010
.011
.012
.014
.015

.018
.020
.022
.025
.028

,031
.036
.040
.046
.052

.055
.063

160
170
180

.032
,036
.040
.046
.052

.060
.068
.078

X%

.017
.019
.021
.023
.026

210
220
230
240
250

.029
.033
.037
.042
.047

.059
.068
.077
.088
,10

260
270
280
290
300
310

.054
.061
.06
.079
.091
.10

~-M148eXP(~)2ex@)

(MIL-R-39007)
Re istan ) Ra[
up s00
bsoc
1:

Siyte

7!3(

*75
KkJ
1*

>19(

>Iw

I&

&

1.0

1.0

1.2

1.2

1.6

1.6

1.6

NA

1.0

1.0

1.0

1.2

1.6

1.6

NA

N/l

1.0

1.0

1.0

1.0

1.2

1.2

1.2

1.6

1.0

1.2

1.6

1.6

NA

NA

NA

NA

1.0

1.6

NA

NA

NA

NA

NA

NA

1.0

1.6

1.6

NA

NA

NA

NA

NA

1.0

1.0

1.1

1.2

1.2

1.6

NA

NA

1.0

1.0

1.4

NA

NA

NA

NA

MA

74

78

80

81

82

84

89

Quality Factor - nQ
Quality

KQ

.03

.10

.30

(=))

T=

Ambient Temperature (C)

s=

Ratio of Operating Power to Ftatad Power

NOTE: Do not use MlL-R-39oo7 Resistors below the

line. Points below are overstressed.

--

71

1.0

MIL-R-26

5.0

Lower

Y-u

>1K

15

MIL-HDBK:217F

9.6

Resistanm

10
Rwll
Rw

RW12
Rw 13
Rw 14
Rw 15
RW16
RW20
Rw 21
KE
RW 24
RW 29
RW30
Rw 31
RW32
ZE
EE
Rw 37
E:
Rw 47
RW55
RW56
RW 67
l%:
Rw 70
Rw 74
Fw 70
R:
RW 81

up
s
100
1.0
t .0
1.0
1.0
1.0
1.0
1,0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0

Environment
I

>100
m
IK

>1K
to
ICM

100K

1.0
1.0
1.0
1.0
1.0
1.0
1.2
1.0
1.0
1,0
1.0
1.0
1.0
1.2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.2
1.0
1.0
1.0
1.2
1.2

1.0

1.0

1.0
1.2
1.0
1.0

1.2
1.6
2.0
2.0
2.0
NA
NA
2.0
1.6
1.4
1.2

;::
1.6
1.2
1.2
1.0
1.0
1.4
1.6
1.4
1.2
1.0
1.0
1.0
1.2
1.2
1.0
1.0
1.0
1.4
1.2
1.0
1.0
NA
1.4
;::
1.4
1.6
NA

>1OK
to

I&
NA
NA
1.4

1.4
1.4
1.5

1.6
1.4
1.4
1.4
2.4
2.6

FIXED,

WIREWOUND,

POWER

Environment Factor - ~

Factor - XR

(MIL-R-2
Resistance mge
MIL-R-26

RESISTORS,

~E

]ms)
*la
b
I!iw

>150K

J%

GB

1.0

GF

2.0

10

1.2
1.6
M

1.6
NA
NA

E
NA
NA
NA
NA
NA

K
NA
WA
NA
NA
NA

K
NA
NA

E
NA
NA

SF
MF

13

$
NA
NA
NA
1.6
1.6
1.6
NA

E
NA

ML

34

CL

610

NS
NU

$
NA
2.0
2.0
NA
NA

5.0
16

Ic

4.0

IF

8.0

Uc

9.0

*UF

18

Rw

23
.30

K
E
NA
W
1.6
1.6
NA
NA
NA

E
NA
E
NA
E

K
NA
NA
K
K
NA

9-9

MIL-HDBK-217F

9.7

FIXED,

RESISTORS,

WIREWOUND,

SPECIFICATION
MIL-R-39009

STYLE
RER

MIL-R-18546

RE

POWER,

CHASSIS

DESCRIPTION
Fixed, Wirewound, Power Type, Chassis Mounted,
Established Reliability
Fixed, Whewound, Power Type, Chassis Mounted

Resistance Factor - ZR

Base Failure Rate - ~

stress
TA (Z)

.1

.3

(Characteristic G (tnductive Winding ti MlL-R-l 8546 and

lL-R- 1009)
Kmotr
hms
mos I 10
+*1
T
+
Rated
XIK
c)
to
Styte Powar
2%
IK
IOK
z

.5

MOUNTED

.7

.0021

.0032

.0049

.0076

10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250

.0023
.0025
.0020
.0031
.0034
.0037
.0041
.0045
.0050
.0055
.0060
.0066
.0073
.0081
.0089
.0098
.011
.012
.013
.014
.016
.017
.019
.021
.023

.0036
.0040
.0045
.0050
.0056
.0063
.0070
.0079
.0088
.0098
.011
.012
.014
.015
.017
.019
.022
.024
.027
.030

.0056
.0064
.0072
.0082
.0093
.011
.012
.014
.016
.018
.020
.023
,026
.030
.034

.0087
.0100
.012
.013
.016
.018
.021
.024
.028
.032

.9
.012
.014
.016
.019
.022
.026

T=

Ambient Temperature (C)

s=

Ratio of Operating Power to Rated Power

1.0

1.2

1.2

1.6

NA

NA

RE 65
RER65

10

1.0

1.0

1.2

1.6

NA

NA

RE 70
RER70

20

1.0

1,0

1.2

1.2

1.6

NA

RE 75
RER75

30

1.0

1.0

1.0

1.1

1.2

1.6

RE 77

75

1.0

1.0

1.0

1.0

1.2

1.6

RE 80

120

1.0

1.0

1.0

1.0

1.2

1.6
I

Resistance Factor - XR
(Charaderistic N (NoninductiveWinding)of MIL-R-18546
and Noninc ctively Woun Styles of MIL 3-39009)
Resi: mce Ran e
Raled
4

~ = .00015 exp 2.64

(
(%)ex(aa)

RE 60
RER60

Styb

Ptxer

-qr

52)

T!mi 4
to
lK

1;

20K

RE 60
RER40

1.0

1.2

1.6

NA

NA

NA

RE 65
RER45

10

1.0

1.2

1.6

NA

RE 70

20

1.0

1.0

1.2

1.6

NA

NA

30

1.0

1.0

1.1

1.2

1.4

NA

75

1.0

1.0

1.0

1.2

1.6

NA

120

1,0

1.0

1,0

1.1

1.4

NA

RER50
RE 75
RER55

RE 80

,,.

!.

MIL-HDBK-217F

9.7

RESISTORS,

FIXED,

WIREWOUND,

POWER,

MOUNTED

Environment Factor - ~

Quality Faotor - ~

Environment

Quality
s

.030

.10

.30

1,0

GF

2.0

GM
Ns

1.0

Nu

MIL-R-18546

5.0

AIc

15

~E

GB

Lower

CHASSIS

IF
Uc
*UF
RW

10
5.0
16
4.0
8.0
9.0
18
23
.50

SF
MF

13

ML

34

c~

610

9-11

MIL-FIDBK-217F

SPECIFICATION
M IL-T-23648

DESCRIPTION
Thermally Sensitive Resistor, Insulated, Bead, Disk
and Rod-Types

STYLE
RTH

Xp = &QzE

Failures/l OG Hours

Environment Factor - xz

Base Failure Rate - ~

Type

A~

Bead
(Styles 24, 26,28,30,32,
34, 36, 38, 40)

.021

Environment

GB

1.0

GF

5.0

%
Disk
(Styles 6,8, 10)

.065

Rod

.105

(Styles 12, 14, 16, 18,

20, 22, 42)

Quality
MIL-SPEC
Lower

9-12

21

Ns

11

Nu

24

Ic

11

IF

30

Uc

Quality Factor - fl~

~E

16

UF

42

RW

37
.50

SF
~Q

1
15

MF

20

ML

53

c,

950

. ..

.. .
*.

....,.

.,.

.. . .

.,, ..

. . . .. .

MIL-tiDBK-217F

9.9

SPECIFICATION
MIL-R-39015

STYLE
Iv-R

MIL-R-27208

RT

RESISTORS,

VARIABLE,

W! REWOUND

DESCRIPTION
Variable, Wtrewound, Lead Screw Actuated,
Established Reliability
Variable, Wkewound, Lead Screw Actuated

Xp = kbfiTAp~XRZvXQzE Failures/l OG Hours

Potentiometer Taps Factor - q~o=

Base Failure Rate - ~

snr

stress

.1

.0089
.0094
.010
.011
.012
.013
,014
.016
.018
.021
.024
.029
.035
.044
.056

;
30
40
50
60
70
80
90
100
110
120
130
140

l--

.3
.011
.012
.012
,013
.015
.016
.018
.020
.023
.027
.032
.038
.047
.059

.5

.7

.013
.014
.015
.017
.018
.020
.023
.026
.03
.035
.042
.051

.9

.016
.017
.019
.021
.023
.026
.029
.033
.039
.046
.055

.020
.021
.024
.026
.029
.033
.037
.043
.050
.060

N
TAPS

TAPS

3
4
5
6
7
a
9
10
11
12

1.0
1.1
1.2
1.4
1.5
1.7
1.9
2.1
2.3
2.5

2.7
2.9
3.1
3,4
3.6
3.8
4.1
4.4
4.6
4.9

N
TAPS

TAPS

23

5.2
5.5
5.8
6.1
6.4
6.7
7.0
7.4
7.7
8.0

z
E
::
30
31
32

.
%

Ambient Temperature (C)

Ratio of Operating Power to Rated Power.

See Section 9.16 for Calculation of S.

0062(=?X(S
(T=);

Resistance Range (ohms)

TAPS

13
14
15
16
17
18
19
20
21
22

=
%APS

TAPS

2S

+ 0.792

Number of PotentiometerTaps,
includingthe Wiper and Terminations. ~
I
Voltage Factor - xv

Applied
Rated
Otoo.1
>0.1 to
>0.2 to
>0.6 to
>0.7 to
>0.8 to
>0.9 to

Resistance Factor - XR

N
TAPS

10t02K

1.0

>2K to 5K

1.4

>5K to 20K

2.0

Applied

Voltage*
Voltage

1.10
1.05
1.00
1.10
1.22
1.40
2.00

0.2
0.6
0.7
0.8
0.9
1.0

~RpApplied

Nominal Total Potentiometer

Resistance

Applied

Power Dissipation

Rated

Rated

40 Volts for RT 26 and 27

90 Votts for RTR 12, 22 and 24; RT 12
and 22

MIL-HDBK-217F

9.9

RESISTORS,

VARIABLE,

WIREWOUND

QualityFactor - nfi

Environment

Quality

%Q

.020

.060

Environment

1.0

GF

2.0

.20

Ns

.60

Nu

Lower

3.0
10

~E

%...

MIL-R-27208

Factor - KG

12
6.0
20

Ic

5.0

IF

8.0

Uc

9.0

UF

15

RW

33
.50

SF
MF

18

ML

48

cl

9-14

870

.!

.,,

MIL-HDBK-217F

1
9.10
SPECIFICATION
MIL-R-12934

RESISTORS,

VARIABLE,

Resistance Factor -

stress

30
40
50
60
70
80
90
100
110
120
130
140

.10
.11
.12
.13
.14
.15
.17
.19
.21
.24
.28
.33
.40
.49
.60

.3

.5

.7

.9

.11

.12
.13
.14
.16
.J7
.20
.22
.26
.30
.36
.44
.54

.13
.14
.16
.17
.20
.22
.26
.30
.36
.44
.54

.14
.15
.17
.19
.22
.26
,30
.36
.43
.54

.12
.13
.14
.15
.17
.19
.22
.25
.30
.35
.42
.52
.65

-.0735

exp ( 1.03

(~

1.0

>?OK to 20K

1.1

>20K to 50K

1.4

>50K to 10OK

2.0

to 200K

2.5

>100

to 500K

>200K

TAPS

)4.45)X

3.5

s.

(*)351)

Ratio of Operating Power to Rated Power.

See Section 9.16 for Calculating S.

?AP:

TAPS

TAPS

TAPS

;::
2.1

:::
3.6
3.8
4.1
4.4

5.2
5.5
5.8
6.1
6.4
6.7
7.0
7.4

:::

:;

:::

;;:

1.2
1.4
1.5

Ambient Temperature ~C)

13
14
15
16
17
18
19
20

1.1

T=

100 to IOK

1.0
exp((z%)

Resistance Range (ohms)

Potentbrneter Taps Factor \

PRECISION

DESCRIPTION
Variable, WIrewound, Precision

STYLE
RR

Base Failure Rate - ~

.1

WIREWOUND,

$:;

ConstructionClass Factor - z=
b
f

ConstructionClass
RR0900AZA9J1

03

7K*
2.0

1.0

3.0

1.5

%APS

TAPS

M5
25

.(-),,,

Number of Potentiometer Taps,

including the W@er and Terminations.

Sample type designation to show how

construction class can be found, In this example
the construction cJass is 2. Construction class
should always appear in the eighth position.

MIL-HDBK-217F

RESISTORS,

9.10

VARIABLE,

WIREWOUND,

PRECISION

Vottage Factor - ~
Applied
Rated
o

Quality Factor - XQ

Voltage
voltage

to 0.1

%
MIL-SPEC

2,5

Lower

5.0

1.10

>0.1 to 0.2

1.05

0.6

1.00

>0.2 to

UQ

Quality

Environment Factor - n=

>0.6 to 0.7

1.10

>0.7 to 0.8

1.22

GB

1.0

>0.8 to 0.9

1.40

GF

2.0

>0.9 to 1.0

2.00

GM

Environment
L

18

Ns

Applied

==

RP

Applied
v

Rated

Nu

Nominal Total Potentiometer

Rated

Rated

8.0

*IC
IF

12

*UC

13

Power Dissipation

*UF

18

*RW

53

250 Votts for RR0900, RRI 100,

423 Volts for RR3600, RR3700

500 Votts for RR1 000, RR1 400,
RR21 00, RR3600, RR3900

9-16

30

Resistance

RR1300, RR2000, RR3000,

RR31OO, RR3200, RR3300,
RR3400, RR3500
v

8.0

SF

.50

MF

29

ML

76

CL

1400

MIL-HDBK-21

RESISTORS,

9.11
SPECIFICATION
MIL-R-19

STYLE
RA

MIL-R-39002

RK

;F

VARIABLE,

WIREWOUND,

DESCRIPTION

Variable, Wirewound, Semiprecision (Low Operating

Temperature)
Variable, WWnvound, Semiprecision

kp =

+)~A#Rf/nQn Failures/l

06 Hours

Resistance Factor - ZR

Base Failure Rate - ~

A(~)

.1

.055

.063

10

.058

stn?ss
.5

Resistance Range (ohms)

.7

.9

.072

.083

.095

.069

.081

.095

.11

>2K

>5K to 10K

.3

SEMIPRECISION

10t02K

20

.063

.076

.092

.11

.13

30

.069

.086

.11

.13

,17

40

.076

.098

.13

.16

.21

.085

.11

.15

.20

.27

50

70
80

:6,1=
.16

.26

.42

.69

100

.19

.34

.59

1.0

.45

.85

90

110

.24

120

.31

130

.42

1.1

1.0

to 5K

1.4
2.0

Potentiometer

60

= .0398 exp

e+%

(-

514

(*)446

(%)5).
)

T=

Ambient Temperature (C)

s-

Ratio of Operating Power to Rated Power,

See Section 9.16 for S Calculation.

TAPS

Taps

TAPS

Factor - ~APq

. . ..-

TAPS

TAPS

N
TAPS

TAPS

1.0

13

2.7

23

5.2

1.1

14

2.9

24

5.5

1.2

15

3,1

25

5.8

1.4

16

3.4

26

6.1

1.5

17

3.6

27

6.4

1.7

18

3.8

28

6.7

1.9

19

4.1

29

7.0

10

2.1

20

4.4

30

7.4

11

2.3

21

4.6

31

7.7

12

2.5

22

4.9

32

8.0

2
NOTE: Do not use MlL-R-l 9 below the line. Points
below are overstressed.

MS
?APS

TAPS

25

+ 0.792

Number of Potentiometer Taps,

including the Wiper and Terminations.

9-17

MIL-HDE3K-217F

RESISTORS,

9.11

VARIABLE,

WIREWOUND,

SEMIPRECISION

Vottage Factor - ~

Environment

Factor - z=
L

Environment

Applied Voltage*
Rated Voltage

Otoo.1

GB

1.0

1.10

GF

2.0

>0.1 to 0.2

1.05

GM

>0.2

to 0.6

1.00

>0.6

to 0.7

1.10

>0.7

to 0.8

1.22

16
7.0

N~

28

Nu

8.0

Alc

12

IF

0.9

1.40

>0.9 to 1.0

2.00

>0.8

to

N/A

%c

N/A

UF

38

RW
V

.50

SF
Applied

Nominal Total Potentiometer

Rp

MF

N{A

ML

N/A

CL

NIA

Resistance
Applied
v

Power D~ssipation
50 Votts for RA1o

Rated

75 Volts for RA20X-XC, F

130 Volts for RA30X-XC, F
175 Volts for RA20X-XA
275 Volts for RK09
320 Volts for RA30X-XA

Quality Factor - n=
Quality

MIL-SPEC

2.0

Lower

4.0

9-18

#u

.UUIE

.Ulz

.UEU

MIL-HDBK-217F

9.12

VARIABLE,

Sm?ss

H..,.

Resistance Factor - nR

Base Failure Rate - ~

.1

.3

.5

.7

.064

.074

.084

.097

.11

10

.067

.078

.091

.11

.12

20

.071

.084

.099

.12

.14

30

.076

.091

.11

.13

.16

.15
.17

TA (%)

POWER

Variable, Whwound, Power Type

&~Ap#R~ZcZ&EFailures/IO

%=

WIREWOUND,

DESCRIPTION

STYLE
RP

SPECIFICATION
MIL-R-22

RESISTORS,

.9

Resistance Range (ohms)

1 to 2K
>2K

tO

1.0
5K

1.4

>5K to 10K

2.0

Potentiometer

Taps

Factor - ~APS

., .,-

TAPS

N
TAPS

1.0

13

2.7

23

5.2

1.1

14

2.9

24

5.5

1.2

15

3.1

25

5.8

.15

1.4

16

3.4

26

6.1

.18

1.5

17

3.6

27

6.4

1.7

18

3.8

28

6.7

1.9

19

4.1

29

7.0

10

2.1

20

4.4

30

7.4

11

2.3

21

4.6

31

7.7

12

2.5

22

4.9

32

8.0

40

.081

.099

.12

50

.087

.11

.14

60

.095

.12

.15

70

.10

.14

.18

80

.12

90

.13

100

.15

110

.17

120

.20

TAPS

TAPS

N
TAPS

TAPS

~
= .0481 exp

exp(+

334

(T:%)46)X

(TJ~~)2083)
2
us

T.

Ambient Temperature (C)

%APS

s=

Ratio of Operating Power to Rated Power.

See Section 9.16 for S Calculation.

TAPS

25

+ 0.792

Number of Potentiometer Taps,

including the W@er and Terminations

9-19

.-.

.A

--,

I
I

MIL-HDBK-217F

RESISTORS,

9.12

VARIABLE,

WIREWOUND,

POWER

Voltage Factor - ~

Quality Factor - XQ

Applied Voltage*
Rated Voltage

Quality
%

MIL-SPEC
Otoo.1

1.10

>0.1 to 0.2

1.05

>0.2 to 0.6

1.00

>0.6 to 0.7

1.10

Lower

1.22

>0.8 to 0.9

1.40

>0.9 to 1.0

2.00

Environment

Environment

Rp

Nu

Nominal

Alc

Rated

IF

Power

250 Volts for RP06,

Dissipation

Uc
RP1 O

Class Factor - ~

Construction

Style

.
-

Xc

Class
Enclosed

RP07,

Unenclosed

All Other Styles are

Unenclosed

RP1l,

RP16
I

9-20

~E
16
7.0
28
8.0
12
N/A

UF

N/A

*RW

38
.50

SF

500 Votts for Others

Construction

3.0

~RPpApplied
Total Potentiometer

Factor - ZE

GF

Resistance
Applied

4.0

1.0

Ns
Applied

2.0

GB

GM

~Q

\
>0.7 to 0.8

20
1.0

II

MF

N/A

ML

WA

cL

NIA

MIL-HDBK-217F

9.13
SPECIFICATION
MIL-R-22097

STYLE
RJ

MIL-R-39035

RJR

RESISTORS,

TA (%)

.1

DESCRIPTION

Failures/l

.021
.021
.022
.023
.024
.025
.026
.028
.030
.034
.038
.043
.050
.060
.074

;:
30
40
50
60
70

%
100
110
120
130
140

smss
.5

.023
.023
.024
.025
.026
.028
.030
.032
.035
.039
.044
.051
.060
.073

.024
.025
.026
.028
.029
.031
.033
.036
.040
.045
.052
.060

06 Hours
Resistance Factor - mR

Failure Rate - &

.3

NONWIREWOUND

Variable, Nonwifewound (Adjustment Types)

Variable, Nonwirewound (Adjustment Types),
Established Reliability

% = b%APSR%%E
Base

VARIABLE,

.7

.9

.026
.027
.029
.030
.032
.035
.038
.042
.046
.053
,061

.028
.030
.031
.033
.036
.039
.043
.047
.053
.061

Resistance Range (ohms)

10 to 50K

1.0

>50K to 100K

1.1

>IOOK to 200K

1.2

>200K to 500K

1.4

>500K

1.8

to 1 M

Potentiometer
N

Taps

Factor -

%APS
N

TAPS

TAPS

2.7

23

5.2

14

2.9

24

5.5

1.2

15

3.1

25

5.8

1.4

16

3.4

26

6.1

Ambient Temperature (C)

1.5

17

3.6

27

6.4

Ratio of Operating Power to Rated Power.

See Section 9.16 for S Calculation.

1.7

18

3.8

28

6.7

1.9

19

4.1

29

7.0

10

2.1

20

4.4

30

7.4

11

2.3

21

4.6

31

7.7

12

2.5

22

4.9

32

8.0

TAPS

TAPS

TAPS

1.0

13

1.1

TAPS

I
I

.019 exp (. 445

.xP(&(T;;r)

T=
s

(Il&y)x

246)

2
MEf
hAPS

TAPS

25

+ 0.792

Number of Potentiometer Taps,

,
including the Wiper and Terminations.

9-21

1I
MIL-HDBK-217F

9.13

RESISTORS,

VARIABLE,

NONWIREWOUND

Voltage Factor - ~

Environment Factor - xc
L

Applied Voltage
Rated Voltage

Environment
*v

GB

1.0
3.0

Oto 0.8

1.00

GF

>0.8 to 0.9

1.05

>0.9 to 1.0

1.20

N~
Nu

==

Rp

Applied

6.0
24
5.0

IF

7.0

AUc

12

UF

18

RW

39

Applied

Power Dissipation

200 Votts for RJ and RJR26;

SF

RJ and RJR50

MF

22

ML

57

Rated

300 Volts for All Others

*

Quality Factor - G

Quality
s

.020

.060

.20

.60

MIL-R-22097
Lower

9-22

__

14

Alc

Nominal Total Potentiometer

Resistance

~E

. _ _

3.0
10

c1

.50

1000

MIL-HDBK-217F

RESISTORS,

9.14

Variable, Composition, Low Precision

Failures/l

Lp = #TAp&#f/nQnE

COMPOSITION

DESCRIPTION

STYLE
RV

SPECIFICATION
MIL-R-94

VARIABLE,

OG Hours
Resistance Factor - Xn

Base Failure Rate - ~

..

Resistance Range (ohms)

Stress
.5

.7

.9

.032

.035

.038

50 to 50K

1.0

.031

.034

.038

.042

>50K to lOOK

1.1

.029

.033

.037

.042

.048

>1OOKto 200K

1.2

30

.031

.036

.041

.048

.056

>200K to 500K

1.4

40

.033

.039

.047

.056

.067

>500K tO 1 M

1,8

50

.036

.044

.054

.067

.082

60

.039

.050

.065

.083

.11

70

.045

.060

.08

,11

.14

80

.053

.074

.10

.15

90

.065

.096

,14

100

.084

.13

110

.11

TA (%)

.1

.3

.027

.030

10

.028

20

Potentiometer
N

.0246

.xp(&(w)

Ts

13XP

[. 459

(*)9.3-)X
)

Ambient Temperature (C)

=

Ratio of OperW!ng Power to Rated Power,

See Section 9.16 for S Calculation.

Factor - ~AP:
TAPS

1.0

13

2.7

23

TAPS
7
5.2

1.1

14

2.9

24

5.5

1.2

15

3.1

25

5.8

1.4

16

3.4

26

6.1

1.5

17

3.6

27

6.4

1.7

18

3.8

28

6.7

1.9

19

4.1

29

7.0

10

2.1

20

4.4

30

7.4

11

2.3

21

4.6

31

7.7

12

2.5

22

4.9

32

8.0

TAPS

TIW

Taps

?APS

TAPS

TAPS

TAPS

MEr+07,2
25

Number of Potentiometer Taps,

including the Wiper and Terminations.

9-23

MIL-HDBK-217F

9.14

RESISTORS,

VARIABLE,

COMPOSITION

Environment Factor - XE

Voltage Factor - ~
Applied Voltage*
Rated Voltage

Environment

GB

1.0
2.0

o to 0.8

1.00

GF

>0.8 to 0.9

1.05

GM

>0.9 to 1.0

1.20

Applied

Rp

-d
Nominal Total Potentiometer
Resistance

Applied
v

Rated

29

*IC

40

IF

65

Uc

*RW
500 Volts for RV4X--XA8XB

500 Vofts for 2RV7X--XA&XB

350 Volts for RV2X-XA&XB

350 Votts for RV4X--XA&XB

350 Votts for RV5X--XA&XB

350 Volts for RV6X--XA&XB

250 Votts for RV1 X--XA&XB

200 Votts for All Other Types

Quality Factor - nO

9-24

MIL-SPEC

2.5

Lower

5.0

48
78
46

SF

.50

MF

25

ML

66

cl
=

8.0

Nu

Power Dissipation

19

N~

*UF
.

~E

1200

lvllL-t-fDBK-217F

9.15

RESISTORS,

SPECIFICATION
MIL-R-39023

STYLE
RQ

MIL-R-23285

RVC

VARIABLE,

NONWIREWOUND,

Failures/l

OG Hours
Base Failure Rate - ~

~RQ
Stvle OnIv)

%
80
90
100
110

.1

.3

.5

.7

.9

.023
.024
.026
.028
.032
.037
.044
.053
.068
.092
.13
.20

.024
.026
.029
.032
.036
.042
.051
.064
.083
.11
.17

.026
.029
.032
,036
.041
.049
.060
.076
.10
.14

.028
.031
.035
.040
.047
.057
.070
.091
.12

.031
.034
.039
,045
.053
.065
.083
.11

T+273

:.,;;;

0
;;
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170

7.4

T=
s

&F)

Resistance

Range

.5

.7

.9

.028
.029
.030
.031
.032
.034
.036
.039
.043
.048
.055
.064
.077
.096
.12
.17
.24
.37

.031
.032
.033
.035
.037
.040
.044
.049
.055
.063
.075
.091
.11
.15
.20
.29
.44

.033
.035
.037
.040
.043
.047
.053
.060
.070
.083
.10
.13
.17
.23
.33
.50

.036
.038
.041
.045
.050
.056
.064
.075
.09
.11
.14
.18
.25
.36
.53

.039
.042
.046
.051
.058
.066
.078
.093
.11
.15
.19
,26
.37
.55

T+273

() 398

7.9

(T;Y);3

Ambient Temperature (C)

Ratio of Operating Power to Rated Power.

See Section 9.16 for S Calculation.

Up to 10K

1.0

>1 OK to 50K

1.1

>50K

to 200K

1.2

>200K

tO 1 M

1.4

>lM

.3

q(a)

Factor - ZR

(Ohms)

.1

.0257 exp

%=

Ratio of Ogmrating Power to Rated Power.

See Section 9.16 for S Calculation.

Resistance

!.,

Ambient Temperature (C)

=

-F

TA (C)

()
h

lRVP.
,. . . . .Shfk
-., .- mlu) )

&iess

PRECISION

DESCRIPTION

Base Failure Rate - ~

10
20
30
40
50

AND

Variable, Nonwirewound, Film, Precision

Vatiabie, Nonwirewound, Film

Lp = kbXTAp~ZRZvZQnE

TA (W)

FILM

1,8
I

9-25

MIL-HDBK-217F

9.15

RESISTORS,

VARIABLE,

NONWIREWOUND,

FILM

AND

Potentiometer Taps Factor - ~APq

Quality Factor - TCO

. . ..-

TAPS

TAPS

TAPS

TAPS

PRECISION

TAPS

TAPS

Quality

1.0

73

2.7

23

5.2

1.1

14

2.9

24

5.5

1.2

15

3.1

25

5.8

1.4

16

3.4

26

6.1

1.5

17

3.6

27

6.4

1.7

18

3.8

28

6.7

1.9

19

4.1

29

7.0

10

2.1

20

4.4

30

7.4

11

2.3

21

4.6

31

7.7

NS

12

2.5

22

4.9

32

8.0

Nu

MIL-SPEC

Lower

Environment
Environment

Factor - XE
~E

GB

1.0

GF

3.0

GM

14
7.0
24

w
6.0

*IC
2
d
%APS

TAPS

+ 0.792

25

Number of Potentiometer Taps,

including the Wiper and Terminations.

IF

12

%c

20

*UF

30

RW

39

SF
Voltage
Applied
Rated

Factor - ~

Voltage
Voltage

MF

22

ML

57

c,

O to 0.8

1.00

>0.8

to 0,9

1.05

>0.9 to 1.0

1.20
r

Nominal Total Potentiometer

Applied

Rp

Resistance
Applied

Power Dissipation

250 Votts for RQ090, 110, 150, 200,

Rated

300

9-26

500 Volts for RQ1 00, 160, 210

350 Votts for RVC5, 6

I
.50

1000

,.

MIL-HDBK-217F

9.16

CALCULATION

OF

STRESS

RATIO

FOR

POTENTIOMETERS

Stress Ratb (S) Cakulation for Potentiometers

Stress Rat& (S) Calculationfor Rheostats

Connected Conventionally

&

mnax

s-

APPLIED

s.
EFF

%AffiEt)(maxr~ed)

x GANGED

Equhmkmtpowerinputtothe
potendometerwhenitis not
loaded(i.e.,wiper lead
dkaommctod).Calcukte as
follows:

Maxinwn ament Whii will

be passed through the rheosta
in tho ckouft.

ImZIXrat~

Current rating of

the

potentiometer. H ourrent
rating is not given, use:

V2
in
Applied

&te@p
P

rated

Rp

x RATED

Power Rating of Potentiometer

Vin

InputVoltage

Rp

Nominal Total Potentiometer

Resistance

Nominal TotalPotentiometer

%ATED

Power Rating of Potentiometer

Resistance

%ANGED

%4NGED

Factor to cxmect for the

Factor to correct for the reduction

in effective rating of the
potentiometer due to the dose
proxim~ uf two or more
potentiometers when they are
ganged together on a common
shaft. see below.

reduction in affective ratfng

of the potentiometer due to
the dose proximity of two or
more potentiometer when they
are ganged together on a
cwnmon shaft. See bebw.

Correction factor for the electrical

loading effect on the wiper
oontact of the potentiometer. Its
value is a function of the type of
potentiometer, its resistance,
and the bad resistance. See
next page.

Ganged-Potentiometer FWOf

Number of
Sections
Single
TW
Three
Four
Five
Six

First
Potentiometer
Next to Mount
1.0
0.75
0.75
0.75
0.75
0.75
I

l-hkd in Gang

Second in
Gang
0.60
0.50
0.50
0.50
().50

0.60
0.50
0.40
0.40

- ICG~GED
Fourth in Gang

Not App Iioable

Not
Not
0.60
0,50
I
040

Fifth in Gang

Sixth in Gang

Applicable
Applicable
Not
0.60
050

Applicable
1 Not Applicable
I
060

9-27

,-

MIL-HDBK-217F

9.16

CALCULATION

OF STRESS

RATIO

FOR

Styk Constant - KH
.,

Loaded Potentiometer Derating Factor- ZEFF

%1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
3.0
4.0
5.0
10.0
100.0

Potentiometer

0.2

0.3

0.5

1.0

.04
.13
.22
.31
.38
.45
.51
.55
.59

.03
.09
.16
.23
.29
.35
.40
.45
.49
.53
.65
.73
.81
.86
,88
.94
.99

.02
.05
.10
.15
.20
.25
.29
.33
.37
.40
.53
.82
.72
.78
.82
.90
.99

.01
.03
.05
.08
.11
.14
.17

%
.80
.87
.90
.92
.96
1.00

%?
.25
.36
.44
.56
.64
.69
.83
.98

f%

Style Type

MlL-R-l 9

RA

0.5

MIL-R-22

IW

1.0

MN-R-94

Rv

0.5

MlL-R-l 2934

RR1 000, 1001,

0.3

1003, 1400,
2100, 2101,
2102,2103
All Other Types

0.2

MIL-R-22097

RJll,

0.3

MIL-R-22097

All Other Types

0.2

MIL-R-23285

Rvc

0.5

MIL-R-27208

RT22, 24,26,27

0.2

MIL-R-27208

AH Other Types

0.3

MIL-R-39002

RK

0.5

MIL-R-39015

RTR 22,24

0.2

use lowest value). RL is the total

MJL-R-39015

RTR12

0.3

resistance between the wiper arm

and one end of the potentiometer.

MIL-R-39023

RQ

0.3

MIL-R-39035

RJR

0.3

RL2 + KH

RP2 + 2RPRL
(

RL

MIL-SPEC

MIL-R-12934

RL2

%FF

POTENTIOMETERS

Load resistance (If RL is variable,

RJ12

Nominal Total Potentiometer

Resistance

%i

Style -nstant.

See KH

Table.

9-28

.--

MIL-HDBK-217F

9.17

RESISTORS,

EXAMPLE

Example
Type RVISAYSA505A
vartable 500K ohm resistor procured per MIL-R-94, rated at 0.2
watts is being used in a fixed ground environment. The resistor ambient temperature is
40C and is dissipating 0.06 watts. The resistance connected to the wiper contact varies
between 1 megohm and 3 megohms. The potentiometer is connected conventionally
without ganging.

Given:

The appropriate model for RV style variable resistors Is given in Sectbn 9.14.
Based on the given
infonnatbn the folbwing modei factors are determined fnm the tables shown in Seotbn 9.14 and by
foiiowingthe procedure for determining electrical stress for potentiometers as desdbed in Section 9.16.

From Section

9.16

APPLIED

.06W

EFF

.62

KH . .5 for MIL-R-94 (Section 9.16 Tabie)

1.0

Not Ganged (Section 9.16 Table, Single Section,

%ANGED

First Potentbmeter)
RATED

APPLIED

From Section

.2W

~EFF x GANGED

x RATED

.06
= (.62)(1.0)(.2)

= m

9.14

.047

TA = 40C, S Rounded to .5

1.4

500K

1.0

3 Taps, Basic Single Potentiometer

VRATED = 250 VOttS for RV1 prefu

1.0

ohms

VAPPLIED

= ~ (500,000)(.06)

APPLJE#RATED

173
= ~

~ 173 VOftS
=
W

2.5

2.0

% TAPS%
(.047)(1.0)(1

V Q E
.4)(1 .0)(2.5) (2.0) = .33 Failures/l 06 Hours

9-29

MIL-HDBK-217F

10.1

CAPACITORS,

FIXED,

PAPER,

BY-PASS

SPECIFICATION
MII--C-25

STYLE
CP

DESCRIPTION
Paper, By-pass, Filter, Blocking,

MIL-C-12889

CA

Paper, By-pass, Radio Interference Reduction AC

DC

andl3-Zp = lbZCVXQnE

Failures/l

OG Hours
Base Failure Rate - ~

Base Failure Rate - ~

(T.85c MaxRated)

(T-125%

(All MIL-G-12889:MIL-C-25 Stvles CP25. 26.27.28.29.

40, 41, 67, 69,70,72,
75, 76,77,78:80:81
i 82:
Characteristics E. F)

S&

TA (%]

.1

.3

.00088

.0011

.0036

.015

.051

10

.00089

.0011

.0036

.016

.052

20

.00092

.0011

.0037

.016

.054

30

.00097

.0012

.0039

.017

.057

40

.0011

.0013

.0044

.019

.063

50

.0013

.0016

.0052

.022

.075

60

.0017

.0021

.0069

.030

.10

70

.0027

.0034

.011

.048

.16

80

.0060

.0074

.024

.10

.35

TA (%)

\=.00086[(~)5+

T=
s

.5

Max Ra!ed)

(MIL-C-25 Styles CP 4,5,8,9,

10, 11, 12 13;
Characteristic K)

.1

.3

stress
.5

.7

.9

.9

.7

l]exp(2.5(~)18)

.00086

.0011

.0035

.015

.051

10

.00087

.0011

.0035

.015

.051

20

.00087

.0011

.0035

.015

.051

30

.00088

.0011

.0035

.015

.051

40

.00089

.0011

.0036

.015

,052

50

.00091

.0011

.0037

.016

.053

60

.00095

.0012

.0039

.017

.056

70

.0010

.0013

.0041

.018

.060

80

.0011

.0014

,0046

.020

.067

90

.0014

.0017

.0056

.024

.081

100

.0019

.0023

.0076

.033

.11

110

.0030

.0037

.012

.052

.18

120

.0063

.0078

.026

.11

.37

Ambient Temperature (C)

=

Ratio of Operating to Rated Voltage

Operating vottage is the sum of applied D.C. vottage

and peak A.C. voltage.

~=.ooW3[(5)5+
1]-p(2..(~)8)
T.
s

Ambient Temperature (C)

-

Ratio of Operating to Rated Vottage

Operating voftage is the sum of applied D.C. voltage

and peak A.C. voltage.

1o-1

MIL-HDBK-217F

10.1

CAPACITORS,

FIXED,

PAPER,

BY-PASS

Capacitance Factor- WV
-.
Capacitance, C (@)

Environment

c v

MIL-C-25*
.0034
.15
2.3
16.

0.7
1.0
1.3
1.6

MIL-C-12889
All

1.0

Factor - x_

Environment

fiE

e~

1.0

GF

2.0

GM

9.0
5.0

Nu

15
6.0

Ic
IF

Cv

= 1.2c095

*UC
*UF
%w

17
32
22

SF

Quality Factor - Xfi

Quality

10-2

8.0

MIL-SPEC

3.0

Lower

7.0

.50

MF

12

ML

32

CL

570

+.-

- ., .

... .,.

. ... . ... .. .

., .,.

,,,

.. ...

..

MIL-HDBK-217F

CAPACITORS,

.10.2

PAPER,

FEED-THROUGH

DESCRIPTION
Paper, Metallizecf Paper, Metallized Plastiq RFI
Feed-Throuqh Established Reliability and

STYLE
CZR and CZ

SPECIFICATION
MlL-C-l 1693

FIXED,

Non-Establi;ht?d Reliability
Xp = kbZCvZQzE

Failures/l

06 Hours
Base Failure Rate - ~

Base Failure Rate - ~

~=

(T=85c MaxRated)
(Char-enstics E, W)
TA (C)
o
;;
30
40
50
60
70
80

.1
.0012
.0012

.3
.0014
.0015

,0012
.0013
.0014
.0017
.0023
.0037
.0080

.0015
.0016
.0018
.0021
.0028
.0045
.0099

.5
.0047

.7
.020

.9
.069

.0048
.0050
.0053
.0058
.0069
.0092
.015
.032

.021
.021
.023
.025
.030
.039
.064
.14

.070
.072
.076
.084
.10
.13
.21
.47

~=.o.11,[(~)
+1]..P(2.,(~)18)
Ambient Temperature (C)
Ratio of Operating to Rated Voltage

T=
s=

Operating voltage is the sum of applied D.C. voltage

and peak A.C. voltage.

TA (%)

.1

.0012

E
30
40
50
60
70
80
90
100
110
120
130
140
150

.0012
.0012
.0012
.0012
.0012
.0012
.0012
.0013
.0013
.0015
.0017
.0022
.0033
.0058
.014

Base Failure Rate - ~

TA (C)

.1

.0012
.0012
.0012
.0012
.0012
.0012
.0013
.0014
.0015
.0019
.0025
.0040
.0084

;:
30
40
E
70
80
90
100
110

120

\=.00115[(~)
T.
s

(T= 125C Max Rated)

(Characteristic K)
Sfmss
.3
.5
.0014
.0014
,0014
.0014
.0015
.0015
.0016
.0017
.0019
.0023
.0031
.005
.010

.0047
.0047
.0047
,0047
.0048
.0049
.0052
.0055
.0062
.0075
.010
.016
.034

~00115[(~)5+

.9

.020
.020
.020
.020
.021
.021
.022
.024
.027
.032
.044
.07
.15

.068
.068
.068
.069
.070
.072
.075
.08
.09
.11
.15
.24
.49

+ l]w(25(Tjfl)18)

Ambient Temperature (C)

Ratio of Operating to Rated Voftage

Operating vottage is the sum of applied D.C. voltage

and peak A.C. voltage.

.3
.0014
.0014
.0014
.0014
.0014
.0015
.0015
.0015
.0016
.0017
.0018
.0022
.0028
.0040
.0072
.017

.5

.7

.9

.0047
.0047
.0047
.0047
.0047
.0048
.0048
.0049
.0051
.0055
.0060
.0071
.0091
.013
.024
.057

.020
.020
.020
.020
.020
.020
.021
.021
.022
.023
,026
.03
.039
.057
.10
.24

.068
.068
.068
.068
.068
.069
.070
.071
.074
.079
.087
.10
.13
.19
.34
.62

11expF5(-Y

Ambient Temperature (C)

T=

.7

150C Max Rated)

i~haraeinrktic
,-,
,-, ----- .. ... P}
. f

Ratio of Operating to Rated Vottage

Operating voltage is the sum of applied D.C. vottage

and peak A,C. voltage.

MIL-HDBK-217F
i

10.2

CAPACITORS,

Capadtance

FIXED,

PAPER,

FEED-THROUGH

Factor-WV

Environment

Capacitance, C (JAF)
0.0031

L
1.0

1.8

1.5

Environment

.70

0.061

Factor - XE

v = 1.4c02

Quality Factor - XQ
Quality

GB

1.0

GF

2.0

GM

9.0

N~

7.0

Nu

15

*IC

6,0

IF

8.0

*UC

17

*UF

28

%w

22

.50

SF
M
Non-Established
Lower

1.0
Reliability

3.0

MF

12

ML

32

c,

10

10-4

MIL-HDBK-217F

10.3
SPECIFICATION
MIL-C-14157
MIL-C-19978

CAPACITORS,

PAPER

1P = &cVZQnE

Failures/l

0
;:
30
40
50
60

.3

.00053
.00055
.00061
.00071
.00094
.0015
.0034

.00065
.00069
.00075
.00088
.0012
.0019
.0042

(-r. e5chk Ratacf)

ML-C-14157 StvleCPV17:
MIL@--19978 Characteristics E, F; G, M)

St?ess
.5

.0021
.0022
.0025
.0029
,0038
.0061
.014

.7
.0092
.0096

.011
.012
.016
.026
.059

.9

.1
.00051
.00052
.00054
.00057
.00063
.00074
.00099
.0016
.0035

.031
.032
.036
.042
.055
.088
.20

~=..oo,[(~)+1].xp(2..(~)18)
Ts-

Ambient Temperature (C)

Ratio of Operating to Rated Voftage

(MIL-C-141 57 StVta CPV09 and MlL-C-l 9978

Chara&teristics K, Q, S)
Stress
TA (C)
.1
.3
.5
.7
.9

%
80
90
100
110
120

.0020
.0020
.0020
.0021
.0021
.0021
.0022
.0024
.0027
.0033
.0044
.0071
.015

.0087
.0088
.0088
.0089
.009
.0092
.0096
.010
.012
.014
.019
.030
.064

.029
.029
.030
.030
.030
.031
.032
.035
.039
.047
.064
.10
.21

~-.ooW[(~)5+
l]e.p(2.5(*)8)
T=
s.

.00063
.00064
.00066
.00070
.00077
.00092
.0012
.0020
.0043

.0021
.0021
.0022
.0023
.0025
.0030
.0040
.0064
.014

.7
.0089
.0090
.0093
.0099
.011
.013
.017
.028
.061

.9
.030
.030
.031
.033
.037
.043
.058
.093
.20

Ambient Temperature (C)

s
Ratio of Operating to Rated Voltage
Operating voltage is the sum of appiied D.C. voftage
and peak A.C. voltage.

(T. 125oCMaxRated)

.00062
.00062
.00062
.00063
.00064
.00066
.00068
.00073
,00083
.0010
.0013
.0022
.0045

.5

T-

Base Faibre Rate - ~

.00050
.00050
.00051
.00051
.00052
.00053
.00055
.00059
.00067
.00081
.0011
.0018
.0037

.3

~-.wm[(~)s+
l]e.p(2.5(*)18)

Operating voltage is the sum of applied D.C. vottage

and pa ak A.C. voltage.

o
10
20
30
40
50

FILM

Oe Hours

stress
.1

PLASTIC

Base Failure Rate - ~

Base Failure Rate - ~

(?-=65c MaxRated)
(MIL-C-14157styleCPV07;
MlL-C-l9978 Characteristics P, L]
TA ~)

AND

DESCRIPTION
Paper and Plastk Film, Est. Rel.
Paper and Plastk Film, Est. Rel. and Non-Est. Ret.

STYLE
CPV
CQR and C(2

FIXED,

Ambient Temperature (C)

Ratio of Operating to Rated Vottage

Operating voltage is the sum of applied D.C. voftage

and peak A.C. voltage.

A (%)
o

Y
30
40
::
::
90
100
110
120
130
140
150
160
170

Base Failure Rate - ~

(T= 170C Max Rated)
(MIL-C-1 9978 Characteristic T)
Stress
.1
.3
.5
.7
.00050
.00050
.00050
.00050
.00050
.00050
.00051
.00051
.00052
.00054
.00056
.00060
.00067
.00079
.0010
.0015
.0026
.0061

~=.0005[(~)5+

.00062
.00062
.00062
.00062
.00062
.00062
.00063
.00063
.00065
.00066
.00069
.00074
.00083
.00098
.0013
.0018
.0032
.0075

.0020
.0020
,0020
.0020
.0020
.0020
.0021
.0021
.0021
.0022
.0023
.0024
.0027
.0032
.0041
.006
.011
.025

,0087
.0087
.0087
.0087
.0087
.0088
.0088
.0089
.0091
.0093
.0097
.010
.012
.014
.018
.026
.046
.11

.9
.029
.029
.029
.029
.029
.030
.030
.030
.031
.031
.033
.035
.039
.046
.060
.087
.15
.36

1].xp(2.5(*)18)

.
T
=
Ambient Temperature ~C)
s=
Ratio of Operating to Rated Voftage
Operating vottage is the sum of applied D.C. vottage
and Desk A.C. voltaae.

10-5

MIL-HDBK-217F

10.3

CAPACITORS,

FIXED,

PAPER

AND

PLASTIC

FILM

Environment

-.
Capacitance, C @F)

MIL-C-14157:
.0017
.027
.20
1.0

*CV

.70
1.0
7.3
1.6

MIL-C-19978: w
.00032
.033
1.0
15.0

.70
1.0
1.3
1.6

Cv = 1.6C013
7tcv = 1.3C

0.077

~Q

.03

.10

.30

1.0

3.0

Lower

10-6

Non-Est.

%E

GB

1.0

GF

2.0

GM

8.0

Ns

5.0

Nu

14

%c

4.0

IF

6.0

*UC

11.0

*UF

20

*RW

20

Rel.

10
30

.50

MF

11

ML

29

Quality

9978,

Environment

SF

Quality Factor - nQ

MlL-C-l

Factor - XE

530

MIL-HDBK-217F

10.4

CAPACITORS,

FIXED,

SPECIFICATION
MIL-C-18312
MI L-C-39022

METALLIZED

PAPER,

Base Failure Rate - ~

(T-85c MaxRated)
(MIL-C-39022Charactertatic
9 and 12 (50 Voltsrated].
~ (%)

eristic 49; and MlL-C-l 8312 Characteristic R)

stress
.1
.5
.7
.9
.3

.00070

.00087

.0029

.012

.041

10

.00072

.00089

.0029

.012

.042

20

.00074

.00091

.0030

.013

.043

30

.00078

,00097

.0032

.014

.046

40

.00086

.0011

.0035

.015

.051

50

.0010

.0013

.0041

.018

.06

60

.0014

.0017

.0055

.024

.08

70

.0022

.0027

.0089

.038

.13

80

.0048

.0059

.019

.084

.28

~=.WW9[(~)5+

l]exp(2.5

AND

PLASTIC

DESCRIPTION
Metallized Paper, Paper-Plastic, Plastic
MetalJized Paper, Paper-Plastic, Plastic,
Established Reliabifii

STYLE
CH
CHR

kp = kbTCCvXQxE Failures/l

Chara

PAPER-PLASTIC

OG Hours
Base Failure Rate - ~

(T=1250CMax
Rated)
(MIL-C-39022 Char~eristic
9 and 12 (above 50 Votts
ratedl Characteristics 1.10, 19, 29, 59; and
.MlL-C-l8312 Chara%istic
N)
Strass
.1
.3
.7
.9
.5
TA (~)
o

.00069

.00086

.0028

.012

.041

10

.00069

.00086

.0028

.012

.041

20

.00070

.00086

.0028

.012

.041

30

.00070

.00087

.0028

.012

.041

40

.00071

.00088

.0029

.012

.042

50

.00073

.00090

.003.

.013

.043

60

.00076

.00094

.0031

.013

.04s

70

.00082

.0010

.0033

.014

.048

80

.00092

.0011

.0037

.016

.054

90

.0011

.0014

.0045

.019

.065

100

.0015

.0019

.0061

.026

.088

110

.0024

.0030

.0098

.042

.14

120

.0051

,0063

.020

.088

.30

(=)18)

T.

Ambient Temperature (C)

s-

Ratio of Operating to Rated Voltage

Operating voftage is the sum of applied D.C. voltage

and peak A.C. voltage.

\=.00069[(~)+
T=
S

l]exP(2.5

(=)18)

Ambient Temperature (C)

=

Ratio of Operating to Rated Voltage

Operating voltage is the sum of applied D.C. voltage

and peak A.C. voltage.

MIL-HDBK-217F

10.4

CAPACITORS,

Capadtance

FIXED,

METALLIZED

PAPER,

PAPER-PLASTIC

AND

PLASTIC

Emkmment Factor -xc

Factor - wv

Capacitance, C @F)

c v
.70

0.0029
0.14

1.0

2.4

1.3

Zcv = 1.2C

Environment
GB

1.0

GF

2.0

8.0

NS

5.0

Nu

0.092

*IC
IF
*UC

Quality Factor - Xn
u

7CQ

Quality

~E

14
4.0
6.0
11.0

*UF

20

RW

20

0.03

SF

.10

MF

11

.30

ML

29

CL

530

1.0

3.0

MIL-C-18312,
Lower

Non-Est.

Rel.

7.0
20

.50

MIL-HDBK-217F

10,5
SPECIFICATION
MIL-C-55514

CAPACITORS,

FIXED,

PLASTIC

AND

STYLE

DESCRIPTION

CFR

Plastic, Metallized

Xp = kbXcvXQzE

Failures/l

METALLIZED

PLASTIC

Plastic, Est. Rel.

OG Hours

Base Failure Rate - ~

(T= 12SOCMax Rated)
(Charadari@im
\ -. -------- .-. . 0-,

(Characteristics M, N)

TA (%)

.1

.3

R
, ., !%)
- t

Strws
.5

.5

.7

.9

TA (C)

.1

.3

.00099

.0012

.7

.9

.0040

.017

.058

.0010

.0012

.0041

.018

.059

10

.0010

.0013

.0042

.018

.060

10

.0010

.0012

.0040

.017

.058

20

.0011

.0013

.0043

.018

.062

20

.0010

.0012

.0041

.017

.059

30

.0011

.0014

.0045

.020

.066

30

.0010

.0012

.0041

.018

.059

40

.0012

.0015

,0050

.022

.073

40

.0010

.0013

.0041

.018

.060

50

.0015

.0018

.0059

.026

.086

50

.0011

.0013

.0043

.018

.062

60

,0020

.0024

.0079

.034

,11

60

.0011

.0014

.0044

.019

.064

70

.0032

.0039

.013

.055

.18

70

.0012

.0015

.0048

.020

.069

80

.0069

.0085

.028

.12

.40

80

.0013

.0016

.0054

.023

.077

90

.0016

.0020

.0065

.028

.094

100

,0022

.0027

.0087

.038

.13

110

.0035

.0043

.014

.06

.20

120

.0073

.0090

.029

.13

.43

~=.00099[(:)5+

l]exP(2.5

(%)18)

T=

Ambient Temperature (C)

s=

Ratio of Operating to Rated Voltage

Operating vottage is the sum of applied C).C. voftage

and peak A.C. voltage,

\=.00099[(;)5+

1].XP(2.5

(-)18)

T=

Ambient Temperature (C)

s-

Ratio of Operating to Rated Voltage

Operating vottage is the sum of applied D.C. voltage

and peak A.C. voftage.
i

. .

,..

MIL-J+DBK-217F

CAPACITORS,

10.5

FIXED,

PLASTIC

AND

METALLIZED

Environment Factor - n=

Capacitance Factor - WV
Capacitance, C (jLF)

.70

0.33

1,0

7.1

1.3

7CCV=1.1 C

~E

Environment

~cv

0.0049

GB

1.0

GF

2.0
10

GM

5.0

Ns

1.5

38.

PLASTIC

0.085

Nu

16

Alc

11

%c

18
30

*UF
Quality Factor - ZQ
Quality

~Q

.030

.10

.30

23

RW

.50

SF
MF

13

ML

34
610

cL

1.0

10

Lower

1o-1o

,--

nI

--A

A.-

MIL-HDBK-21

10.6
SPECIFICATION
MIL-C-63421

CAPACITORS,

7F

FIXED,

STYLE

DESCRIPTION

CRH

Super-Metallized Plastic, Est. Rel.

1P = kbXCvZQnE

Failures/l

(T= 125C Max Rated)

stress
.1
.3
.5

::
30
40
50
60
70
80
90
100
110
120

.00055
.00055
.00056
.00056
.00057
.00058
.00061
.00065
.00073
.00089
.0012
.0019
.0040

.00068
.00068
.00069
.00069
.00070
.00072
.00075
.00081
.00091
.0011
,0015
.0024
.0050

,0022
.0022
.0023
.0023
.0023
.0024
.0025
.0026
.0030
.0036
.0049
.0078
.016

Capacitance Factor - WV
t

.7

.9

.0096
.0096
.0097
.0098
.0099
.010
.011
.011
.013
.015
.021
.033
.070

.032
.032
.033
.033
.033
.034
.036
.038
.043
.052
.07
.11
.24

Capacitance,

C (vF)

+ 1].XP(2.5

(~)

Cv

.001

.64

0.14

1.0

2.4

1.3

23

ncv

1.6

= 1 .2C

0.092

Environment
~=.00055[(~)5

PLASTIC

OG Hours

Base Failure Rate - ~

SUPER-METALLIZED

Factor - X_

Environment

GB
T.

Ambient Temperature (C)

GF

4.0

s=

Ratio of Operating to Rated Vottage

GM

8.0

Ns

5.0

Operating voltage is the sum of applied D.C. voltage

and peak A.C. voltage.

Quality Factor - ZQ

Quality

7tQ

.020

14

Alc

4.0

IF

6.0

Uc

13.0

UF

20

fhv

20

.10

sF

.30

MF

11

ML

29

M
Lower

. . .

Nu

1.0
10

CL

.50

530

MIL-HDBK-217F

10.7

CAPACITORS,

FIXED,

MICA

SPECIFICATION
MIL-C-5

STYLE
CM

DESCRIPTION
MICA (Dipped or Molded)

MIL-C-39001

CMR

MICA (Dipped), Established Reliability

Ap = LbZCvZQzE

Failures/l

BaseFailure Rate - ~
(T=70C Max Rated)
(MIL-G5, Temp. Range M)
stress
.1
.3
.5

TA ~)

.00030
.00047
.00075
.0012
.0019
.0031
.0049
.0078

10
20
30
40
50
60
70
~=

8.6x10-10

.00041
.00066
.0011
.0017
.0027
.0043
.0068
.011
[(3)3

.00086
.0014
.0022
.0035
.0056
.0089
.014
.023

I
.7
.0019
.0030
.0047
.0075
.012
.019
.030
.049

+ I]exP(16

.9

TA (C)

.0036
.0058
.0092
.015
.023
.037
.059
.095

(~)

0
10
20
30
40
50
60
70
80

Ambient Temperature (C)

Ratio of Operating to Rated Voltage

s.

TA (C)
o
10
20
30
40
50
60
70
80
90
100
110
120
~b=
T=
s=

.00005
.00008
.00011
.00017
.00025
.00038
.00057
.00085
.0013
.0019
.0028
,0042
.0063

.00007
.00011
.00016
.00024
.00036
.00053
.0008
.0012
.0018
.0027
.0040
.0059
.0089

8.6)( 10-10 [(3)3+

.00015
.00022
.00033
.00050
.00074
.0011
.0017
.0025
.0037
.0055
.0083
.012
.018
jeW(16

8.6 XW1O

[(~)3+

.7

.00051
.00079
.0012
.0010
.003
.0047
.0074
.012
.018

.0011
.0017
.0027
.0042
.0065
.010
.016
.025
.039

1]W(16

(w)

.9
.0021
.0033
.0052
.0081
.013
.020
.031
.048
.076
)

Ambient Temperature (oC)

Ratio of Operating to Rated Vottage

Operating voltage is the sum of applied D.C. voltage

and peak A.C. voltage.

n=1500C
Temp. Ranqe 0)
.7

.00032
.00048
.00071
.0011
.0016
.0024
.0036
.0053
.008
.012
.018
,027
.040

.9
.00062
.00093
.0014
.0021
.0031
.0046
.0069
.010
.016
.023
.035
.052
.077

(%%))

Ambient Temperature (C)

Ratio of Operating to Rated Vottage

Operating voltage is the sum of applied D.C. voltage

and pa ak A.C. voltage.

10-12

.00024
.00038
.00059
.Ooow
.0015
.0023
.0036
.0056
.0087

Base Failure Rate - ~

Base Failure Rate - ~

(T=125CMax Rated)

f!fwi

.00017
.00027
.00042
.00066
.0010
.0016
.0025
.0040
I .0062

T=
s.

Operating vottage is the sum of applied D.C. voltage

Temp. Range O; MIL-C-39001

Stress
.1
.3
.5

Base Failure Rate - ~

(T=850C Max Rated)
(MIL-C-5, Temp. Ran@ N)
stress
.1
.3
.5

)
lb=

T.

OG Hours

Max Rated)

UY!!kQsTemp.R-ange P; MIL-C-39001,
TA (C)

.1

.3

o
10
20
30
40

.00003
.00004
.00006
.00008
.00012
.00018
.00026
.00038
.00055
.0008
.0012
.0017
.0025
.0036
.0053
.0078

.00004
.00005
.00008
.00012
.00017
.00025
.00036
.00053
.00077
.0011
.0016
.0024
.0035
.0051
.0074
.011

%
70
80
90
100
110
120
130
140
150

Ab= S.6XIO-10[(33+

stress
.5

.00008
.00011
.00017
.00024
.00035
.00051
.00075
.0011
.0016
.0023
.0034
.0050
.0073
.011
.015
.023
1].XP(16

Temp. Ranqe P)
.7

.9

.00017
.00024
.00036
.00052
.00076
.0011
.0016
.0024
.0034
.0050
.0073
.011
.016
.023
.033
.049

.00033
.00047
.00069
.0010
.0015
.0022
.0031
.0046
.0067
.0098
.014
.021
.030
.044
.065
.095

(7;;?)

Ambient Temperature (C)

T=
Ratio of Operating to Rated Voftaqe
sOperating voltage is the s~m of applied D.C. voltage
and peak A.C. voltage.

* ,.

MIL-HDBK-217F

10.7

CAPACITORS,

FIXED,

MICA

Capacitance Factor - ~V

Environment Factor - z=

Capacitance, C (pF)

Cv

.50

38

.75

300

1.0

2000

1.3

8600

106

29000

1,9

Environment
GB

1.0

GF

2.0
10

%
Ns

6.0
16

Nu

84000

Cv

2.2

= 0.45C4

%c

5.0

IF

7.0

Uc

22

UF

28

%nN

23

SF

Quality Factor - nQ
Quality
T

.010

.030

.10

.30

1.0

1.5

MIL-C-5, Non-Est. Rel. Dipped

3.0

MIL-C-5, Non-Est. Ref. Molded

6.0

Lower

.50

MF

13

ML

34

c1

610

15

10-13

r-

--

...:--

r---

----

nu.

MIL-HDBK-217F

10.8

CAPACITORS,

FIXED,

SPECIFICATION
MIL-C-1095O

MICA,

BUTTON

DESCRIPTION
MICA, Button Style

STYLE
CB

Xp = LbZCvXQnE

Failures/l

OG Hours

Base Failure Rate - ~

Base Failure Rate - ~

(T= 85C Max Rated)

(T= 150C Max Rated)

fAll
Fxrxmt ----CR50\
\ . ....-TvoP=------

(Stvle CB50)

s&-

.1

.3

.5

.7

.9

TA (C)

.1

.3

.0067

.0094

.019

,042

.082

.0058

.0081

10

.0071

.0099

.021

.044

.086

10

.0059

20

.0076

.011

.022

.047

.092

20

30

.0082

.011

.024

.051

.10

40

.009

.013

.026

.056

50

.010

.014

.029

60

.012

.016

70

.013

.019

TA (Z)

::00

5~~~~)~~l]ex~72

stress
.5

.7

.9

.017

.036

.071

.0083

.017

.037

.072

.0061

.0085

.018

.038

.074

30

.0062

.0087

.018

.039

.076

.11

40

.0064

.009

.019

.040

.079

.063

.12

50

.0067

.0094

.019

.042

.082

.033

.072

.14

60

.0070

.0098

.020

.044

.086

.039

.084

.16

70

.0074

.010

.022

.046

.090

80

.0079

.011

.023

.049

.096

90

.0085

.012

.025

.053

.10

100

.0093

.013

.027

.058

.11

110

.010

.014

.03

.064

.12

(~-

T.

Ambient Temperature (C)

120

.011

.016

.033

.072

.14

s=

Ratio of Operating to Rated Voltage

130

.013

.018

.038

.082

.16

140

.015

.021

.044

,095

.18

150

.018

.025

.052

.11

.22

Operating vottage is the sum of applied D.C. voltage

and peak A.C. voltage.

~=

.0053 [(~)3

+ l]exP(l.2

(T~~~)63)

T=

Ambient Temperature (C)

s==

Ratio of Operating to Rated Voftage

Operating voltage is the sum of applied D.C. voltage

and peak A.C. voltage.
c

10-14

MIL-HDBK-217F

10.8

CAPACITORS,

FIXED,

MICA,

BUTTON

Environment Factor - X.

Quality Factor - ZQ

Quality

ftQ

MIL-C-1095O

5.0

Lower

Environment
GB

1.0

GF

2.0

15

Capacitance Factor - ~v

Capacitance, C (pF)

GM
Ns

10

Nu

16

5.0

Cv

AC

5.0

.50

IF

7.0

50

.76

*UC

22

UF

28

RW

23

160

1.0

500

1.3

SF

1200

1.6

MF

13

2600

1.9

ML

34

5000

2.2

cL

Cv

.50

610

= .31c023

. =n--==-=-c=.==s-ee..-

10-15

_m_-

. .

..

_._.._.
~== _.

MIL-HDBK-217F

II
I

,
I

10.9

CAPACITORS,

FIXED,

SPECIFICATION
MlL-C-l 1272
MIL-C-23269

GLASS

DESCRIPTION
GIass
Glass, Established Reliability

STYLE
CY
CYR

Ap = kbnCVTCQnE Failures/l

OG Hours

Base Faiture Rate - ~

Base Failure Rate - &

(T= 200C Max Rated)
(MIL-C-1 1272 Ternp Range D)
&
.1
.3
.5
.?

(T=125C Max Rated)

WL!!!!! C-23296

and MlL-C-l 1272 Temp. Range Cl

Stmss

TA (%;
o
10

.3

.5

.7

.9

.00005

.00010

.00023

.0005!

.1
.00005
.00007

.00008

.00014

.00035

.00008

.00019

.00011

.00027

.00032

.00078

.0018

.0017

.00018

.00044

.00013

.00014

.00025

.00061

.0015

90

.00018

.00020

.00035

.00086

.0020

100

.00025

.00028

.00050

.0012

.0029

110

.00035

.00039

.00070

.0017

.0040

120

.00049

.00055

.00098

.0024

.0056

.0039

.0092

80

.0012

.0014

.0024

,0058

.014

90

.0018

.0020

.0036

.0087

.021

100

.0027

.0030

.0054

.013

.031

110

.0040

.0045

.0080

.019

.046
.069

(T;%)

Ratio of Operating to Rated Vottage

.00074

80

.0016

s=

.00031

.0041

.00091

Ambient Temperature (C)

.00013

.0010

.0008

T=

.00053

.00007

70

+ 1].xlp

.00038

,00022

.00010

.0062

b = 8.25X lo-fo [(:)4

.00016

.00009

.00006

.0026

.029

.00007

.00005

.00009

.0011

.012

.00004

.00005

60

.00061

.0068

.00003

50

70

.00054

.0060

40

.0028

60

120

.00014

.00003

.00018

.00072

.00006

.00005

.00016

.00041

.00002

.00002

30

.00036

.00010

.00001

.00003

.0012

50

.00004

.00001
.00002

.00052

.0012

.Oooo1 .00002

10

.00002

.00022

.00048

.00001

20

.00012

.00027

30

.00011

.00024

.9

.0008

20

40

TA (C

Operating voltage is the sum of applied D.C. vottage

and peak A.C. voltage.

130

.00069

.00078

.0014

.0033

.0079

140

.00096

.0011

.0019

.0047

.011

150

.0014

.0015

.0027

.0065

.016

160

.0019

.0021

.0038

.0092

.022

170

.0027

.0030

.0053

.013

.031

180

.0037

.0042

.0075

.018

.043

190

.0052

.0059

.010

.025

.060

200

.0073

.0083

.015

,035

,084

$=

8.25x

I0 -q(:)4+

1]W(16

(%%)

T=

Ambient Temperature (C)

s.

Ratio of Operating to Rated Voltage

Operating voltage is the sum of applied D.C, voltage

and peak A.C. voltage.

Ml13HDBK-217F

10.9

Cv

.62

.75

Environment

~E

GB

1.0

GF

2.0

GM

10

30

1.0

Ns

200

1.3

Nu

900

1.6

AC

5.0

3000

1.9

IF

7.0

8500

2.2

Cv = 0.62C014

Quality Factor -

6.0
16

*UC

22

*UF

28

RW

23

SF

.50

MF

13

ML

34

CL

610

~Q

Quality

~Q

.030

.10

.30

1.0

3.0

MlL-C-l 1272, Non-Est. Rel.

3.0

Lower

GLASS

FIXED,

Environment Factor - ZE

Capacitance Factor - ~,v

-.
Capacitance, C (pF)

CAPACITORS,

10

10-17

7F

MJL-HDBK-21

10.10

CAPACITORS,

FIXED,

3ECIFICATION

CERAMIC,

GENERAL

STYLE
GK
CKR

M !L-C-11015
M L-C-39014

PURPOSE

DESCRIPTION
Ceramk, General Puqxxe
Ceramk, General Purpose, Est. Rel.

Lp = kbZcvZQnE

Failures/l

Base Failure Rate - ~

(T= 850C Max Rated)
AIL-C31014 Styles CKR13, 48, 64, 72;
IL-C-I 1015 Type A Rated Temperature)

OG Hours
Base Failure Rate - ~
(T =1500C Max Rated)
ItL-C-l 1015 T ype C Rated Temperature)

TA (W
o
10
20
30
40
50
60
70
80

.1

.3

.5

.7

.9

.00067
.00069
.00071
.00073
.00075
.00077
.00079
.00081
.00083

.0013
.0013
.0014
.0014
.0014
.0015
,0015
.0016
.0016

.0036
.0037
.0030
.0039
.004
.0042
.0043
.0044
.0045

.0088
.0091
.0093
.0096
.0099
.010
,010
.011
.011

.018
.019
.019
.020
.020
.021
.021
.022
.023

.7

.9

.3

.00059

.0011

.0032

.0078

.016

10

.00061

.0012

.0033

.008

.016

20

.00062

.0012

.0034

.0082

.017

30

.00064

.0012

.0035

.0084

.017

40

.00065

.0013

.0035

.0086

.018

50

.00067

.0013

.0036

.0088

.018

.
%-

0003[(33
18X(T=
)

60

.00068

.0013

.0037

.009

.018

T=
s=

Ambient Temperature (C)

Ratio of Operating to Rated Voltage

70

.00070

.0013

.0038

.0092

.015

80

.00072

.0014

.0039

.0095

.019

90

.00073

.0014

.0040

.0097

.020

100

.00075

.0014

.0041

.0099

.020

110

.00077

.0015

.0042

.010

.021

120

.00079

.0015

.0043

.010

.021

130

.00081

.0016

.0044

.011

.022

140

.00083

.0016

.0045

.011

.022

150

.00085

.0016

.0046

.011

.023

Operating vottage is the sum of applied D.C. voltage

and peak A,C. voltage.

.5

.1

Base Failure Rate - ~

(T= 125C Max Rated)
(MIL-C-39014 Styles CKR05-12, 14-19, 73, 74;
IL-C- I 1015 Type B Rated Temperature)
stress
.1
.3
.5
.7
.9
(=)
o

10
::
40
50
60
70
80
90
100
110
120

.
b =
T=
s.

.00062
.00063
.00065
.00067
.00068
.00070
.00072
.00074
.00076
.00077
.00079
.00081
.00084

.0012
.0012
.0013
.0013
.0013
.0014
.0014
.0014
.0015
.0015
.0015
.0016
.0016

.0033
.0034
.0035
.0036
.0037
.0038
.0039
.0040
.0041
.0042
.0043
.0044
.0045

.0082
.0084
.0086
.0088
.0090
.0093
.0095
.0097
.010
.010
.010
.011
.011

.017
.017
.018
.018
.018
.019
.019
.020
.020
.021
.021
.022
.023

ooo[(~)+11p(=)

0003[(33+11xp

T-

Ambient Temperature (C)

s.

Ratio of Operating to Rated Vottage

Operating vottage is the sum of applied D.C. voltage

and peak A.C. voltage.

Ambient Temperature (C)

Ratio of Operating to Rated Voltage

Operating voltage is the sum of applied D.C. vottage

and peak A.C. voltage.

NOTE: The rated temperature designation (type A,

B, or C) is shown in the pan number, e.g.,
CKG1AW22M).

MIL-HDBK-217F

10.10

CAPACITORS,

FIXED,

CERAMIC,

GENERAL

PURPOSE

Environment Factor - n=

Capacitance Factor - WV

Capacitance, C (pF)

~cv

6.0

.50

GF

2.0

GM

9.0

Ns

5.0

1.0

36,000

1.3

Nu

240,000

1.6

Ac

4.0

1,100,000

1.9

IF

4.0

2.2

Uc

8.0

4,300,000

0.11

15

*UF

12

*RW

20

SF

Quality Factor - n=

Quality

.030

.10

.30

1.0

3.0

MlL-C-l 1015, Non-Est. Rel.

3.0

1.0

3300

Xcv = .41C

Lower

GB

.75

240

Environment

.40

MF

13

ML

34

c1

610

10

10-19

MIL-I-IDBK-217F

10.11

CAPACITORS,

FIXED,

CERAMIC,

SPECIFICATION
MIL-C-20

STYLE
CCR and CC

MIL-C-55681

CDR

TEMPERATURE

COMPENSATING

DESCRIPTION
Ceramic, Temperature Compensating,
and Non Est. Rel.
Ceramic, Chip, Est. Rel.

lp = kbZcVXOzE

Failures/l

(MIL-C

.1

.3

.00015
.00022
.00033
.00049
.00073
.0011
.0016
.0024
.0036

.00028
.00042
.00063
.000!34
.0014
.0021
.0031
.0046
.0069

~~ W)
10
20
30
40
E
70
80

T.
s-

.00080
.0012
.0018
.0026
.0039
.0059
.0088
.013
.019

1].XP(14.3

= 2.6x1O -9[(:)3+

Stress
.5

.7
.0019
,0029
.0043
.0064
.0096
.014
.021
.032
.047

(T;3

E
30
40
50
60
70
80
90
100
110
120

~=

2.6x10
T=
s.

g[(~)+

.00027
.00038
.00055
.00078
.0011
.0016
.0023
.0033
.0047
.0068
.0097
.014
.020
l]exp(143

.00065
.00093
.0013
.0019
.0027
.0039
.0056
.008
,011
.016
.024
.034
,048
(TJ~T

.0040
.0059
.0088
.013
.020
.029
.044
.065
.097

I
,

2.2

I
\

Quality

~Q

.030
.10
.30
1.0
3.0

R
P
M
Non-Est.
Lower

Rel.

Environment

Factor - XE
~E

GB

1.0

GF

2.0
10

%
N~

5.0

Nu

17

%c

4.0

IF

8.0

*UC

16

*UF

35

*RW

24

Ambient Temperature (C)

Ratio of Operating to Rated Voltage

.50

SF

10
Environment

.0013
.0019
.0027
.0039
.0056
.008
.011
.016
.023
.034
.048
.069
.099
)

.75
1.0
1.3
1.6
1.9

Quality Factor - XQ
)1

Operating vottage is the sum of applied D.C. voftage

and peak A.C. voltage.

I0-20

7
81
720
4,100
17,000
58;000
0.12
Zcv = .59C

.9

Base Failure Rate - ~

(T= 125oC Max Rated)
(MIL-C-20 Styles CC 5-9,13-19,21,22,26,27,
31,33,
36, 37, 47, 50-57, 75-79, 81-83, CCR 05-09,13-19, 5457, 75-79, 81-83, 90; MIL-C-55681 All CDR Styles)
Stress
TA (C)
.1
.3
.5
.7
.9
.00009
.00014
.00019
.00028
.00040
.00057
.00082
.0012
.0017
.0024
.0034
.0049
.0071

Cv
.59

Ambmnt Temperature (%)

Ratio of Operating to Rated Voltage

.00005
.00007
.00010
.00014
.00021
.00030
.00042
.00061
.00087
.0012
.0018
.0026
1 .0037

Est.

Capacitance, C (pF)

45, 85, 95-97)

Operating vottage is the sum of applied D.C. vottage

and maak A.C. vottaoe.

Capacitance Factor - ~,v

Max Ratecf)

Stybs CC 20,25,30,32,35,

CHIP

OG Hours

Base Failure Rate - ~

(r-85%

AND

MF

13

ML

34

610

MIL-HDBK-217F

10.12
SPECIFICATION
MIL-C-39003

CAPACITORS,

FIXED,

n Failures/l
Q E

~ (c)

.1

.3

.5

.7

.0042
.0043
.0045
.0048
.0051
.0057
.0064
.0075
.0092
.012
.016
.024
.039

.0058
.0060
.0063
.0067
.0072
.0079
.009
.011
.013
.017
.023
.034
.054

.012
.012
.013
.014
.015
.016
.019
.022
.027
.034
.047
.07
.11

.026
.027
.028
.030
.032
.035
.040
.047
.050
.074
.10
.15
.24

T.
s=

OG Hours

Circuit Resistance, CR (ohms/vott)

Stress

Lb = .00375 [(~)3

SOLID

Series Resistance Factor - Zsl

Base Failure Rate - ~

90
100
110
120

TANTALUM,

DESCRIPTION
Tantatum Electrolytic (Solid), Est. Ret.

STYLE
CSR

P = %mCV%R

10
20
30
40
50
60
70
80

ELECTROLYTIC,

1]..p(2.6

% R

.9
.051
.052
.055
.058
.063
.069
.078
.092
.11
.14

>0.8

.066

>0.6 to 0.8

.10

>0.4 to 0.6

.13

>0.2 to 0.4

.20

>0.1

.27

to 0.2

0 to 0.1

(T~&

CR

.33

= Eff. Res. Between Cap. and Pwr. Supply

Voltage Appiied to Capacitor

Ambient Temperature (C)

Ratio of Operating to Rated Vottage

operating votiage is the sum of applied D.C. vohage

and peak A.C. voltage.

Envimment

Factor - YC=
L

Environment

Capacitance Factor - WV
Capacitance, C @F)

Cv
0.5
.75
1.0
1.3
1.6
1.9

.003
.091
1.0
8.9
50
210
710

n~v = 1 .Oc

0.12

Quality Faotor-x.

Quality
D

c
s

B
R
P
M
L
Lower

+%-I
0.010
0.030
0.030
0.10
0.30
1.0
1.5
10

GB

1.0

GF

2.0

8.0

NS

5.0

Nu

14

AC

4.0

IF

5.0

*UC

12

*UF

20

RW

24

SF

.40

MF

11

ML

29

CL

530

MIL-HDBK-217F

10.13

CAPACITORS,

FIXED,

ELECTROLYTIC,

NON-SOLID

DESCf IPTION
Tantalw 1, Electrolyk (Non-Solid)
Tantalw I, Electrolytic (Non-Solid),

STYLE
CL
CLR

SPECIFICATION
MIL-C-3965
MIL-C-39006

TANTALUM,

kp = kbXcVZCXQxE

Failures/l

06 Hours
Base Failure Rate - ~

Base Failure Rate - ~

(T= 175eC Max Rated)

tllL-C-3965 Sty Ies CL1O, 13, 14, 16-18)

(-r = 85C Max Rated)

(MIL-C-3965 Styles CL24-27, 34-37)
TA (C)

.1

0
10
20
30
40
50
60

.0021
.0023
.0026
.0030
.0036
.0047
.0065

.3
.0029
.0032
.0036
.0042
.0051
.0066
.0091

Est. Rel.

stress
.5
.0061
.0067
.0075
.0087
.011
.014
.019

TA (%

.7

.9

.013
.014
.016
.019
.023
.029
.041

.026
.028
.031
.036
.044
.057
.079

.1

.3

.5

.7

.9

.0017

.0024

.0050

.011

.021

10

.0017

.0024

.0051

.011

.021

20

.0018

.0025

,0052

.011

.022

30

.0018

.0025

.0053

.011

.022

40

.0019

.0026

.0054

.012

.023

50

.0019

.0027

.0056

.012

.023

60

.002

.0028

.0058

,013

.024

70

.0021

.0030

.0062

.013

.02L

80

.0023

.0032

.0066

.014

.028

90

.0025

.0035

.0072

.016

.030

100

.0028

.0039

.0080

.017

.034

110

.0032

.0044

.0092

.020

.039

120

.0037

.0052

.011

.023

130

.0046

.0064

.013

.029

140

.0059

.0082

.017

.037

150

.0079

.011

.023

.049

160

.011

.016

.033

.071

170

.018

.025

.051

~~ool~

T
s.

Ambient Temperature (C)

Ratio of Operating to Rated Voltage

Operating voltage is the sum of applied D.C. voltage

and peak A.C. voltage.

Base Failure Rate - ~

(T= 125C Max Rated)
(MIL-C-3965 Styles CL20-23, 30-33, 40-43, 46-56, 64i7, 70-73; and all MI L-C-39006 Styles)
Stress
.7
.9
,1
.3
TA (C)
.5

o
10
20
30
40
50
60
70
80
90
100
110
120

.0018
.0019
.0020
.0021
.0023
.0025
.0028
.0033
.0041
,0052
.0071
.011
,017

Ab=.00165[(~)3+
T=
s.

.0026
.0026
.0028
.0029
.0032
.0035
.0040
.0046
.0057
.0073
.010
.015
.024

.0053
.0055
.0057
.0061
.0066
.0072
.0082
.0096
.012
.015
.021
.031
.050

l]exp(2.6

.011
.012
.012
.013
.014
.016
.018
.021
.025
.033
.045
.066
.11
(Tj~~

.022
.023
.024
.026
.028
.030
.034
.040
.049
.084

kb=.00165[(~)3+
)

)-0)

Ambient Temperature (C)

Ratio of Operating to Rated Vottage

Operating vottage is the sum of applied D.C. voltage

and peak A.C. voltage.

10-22

l]exp(2.6(~

T.

Ambient Temperature (C)

s=

Ratio of Operating to Rated Vottage

Operating voltage is the sum of apphed D.C. voftagc

and peak A.C. voltage.

MIL-HDBK-217F

10.13

Capadtanoe

I
I

CAPACITORS,

Capadance, C (p.F)

.091

Constmction

~cv
.70
1.0
1.3

Factor - ~

Type

Quality

.030

.10

.30

1.0

1.5

MIL-C-3965,

NON-SOLID

Non-Est. Rel.

3.0

7CC

Slug, All Tantalum

Foil, Hermetic
Slug, Hermetic
Foil, Non-Hermetic
Slug, Non-Herrnetk

TANTALUM,

Quality Factor - nfi

WV = .82C0066

Construction

ELECTROLYTIC,

Factor - ~v

20
1100

FIXED,

10

Lower

.30
1.0
2.0
2.5
3.0

Environment

Factor - z=
L

Environment

Type

of Seal Identified as Follows:

GB

1.0

GF

2.0

1) MIL-C-3965 (CL) - Note Last Letter in Part Number:

G - Hermetio
E - Non-Hermetic

GM

Example: CL1 OBC700TPQ is Hermetic

Ns

2) MIL-C39006 (CLR) - Consult Individual Part

Specification Sheet (slash sheet)

Nu

NOTE:
Foil Types -

CL 20-25,30-33,40,41,51
CLR 25,27,35,37,53,71,73

-54, 70-73

Slug Types - CL 10, 13, 14, 16, 17, 18,55,56,

64-66, 67
CLR 10, 14, 17,65, 69,89
All Tantalum - CL 26,27,34-37,42,43,
CLR 79

46-49

fiE

10
6.0
16

Ac

4,0

IF

8.0

Uc

14

UF

30

RVV

23

SF

.50

MF

13

ML

34

cL

610

10-23

MIL-HDBK-217F

10.14

CAPACITORS,

FIXED,

ELECTROLYTIC,

DESCRIPTION
Ektrolytic,
Aluminum Oxide, Est. Rel. and Non-Est. Rel.

STYLE
CUR and CU

SPECIFICATION
MIL-C-39018

ALUMINUM

Lp = kbZCvmQzE

Failures/l

06 Hours
Base Faiture Rate - ~

Base Failure Rate - ~

(T= 125C Max Rated)

(All h L-C-3901 8 Styles Except 71, 16 and 17)
stress
TA (~)
.1
.5
.7
.9
.3

(T= 85C Max Rated)

[M IL-C-39018
stvle 71 ~

Stfws
T* (%)
0
;:
30
40
50
60
70

;=.O

.1

.3

.5

.7

.0095
.012
.017
.023
.034
.054
.089
.16

.011
.015
.020
.028
.042
.065
.11
.19

.019
.024
.033
.046
.068
.11
.18
.31

.035
.046
.062
.087
.13
.20
.33
.58

o:[(~;~+

.9
.064
.084
.11
.16
.23
.36
.60
1.1
.

l]:;~.og;-;

T=

Ambient Temperature (C)

s-

Ratio of Operating to Rated Voftage

Operating voltage is the sum of applied D.C. voltage

and peak A.C. voftage.

Base Faiture Rate - ~

(T= 105C Max Rated)
(MIL-C-39018
Styles 16 and 17)
Sttess
.7
,1
.3
.5

[A(~)
0
10
20
30
40
50
60

.0070
.0085
.011
.014
.019
.026
.038
.059
.095

::

,0064
.010
.013
.017
.022
.031
.046
.071
.11

.014
.017
.021
.027
.037
.052
.076
.12
.19

.026
.031
.040
.051
.069
.097
.14
.22
.35

s=

),

Ambient Temperature (C)

Ratio of Operating to Rated Voltage

Operating voftage is the sum of applied D.C. voltage

and peak A.C. voltage.

10-24

.011

.021

.038

10

.0065

.0078

.013

.024

.044

20

.0077

.0093

.015

.029

.052

30

.0094

.011

.019

.035

.064

40

.012

.014

.023

.044

,080

50

.015

.019

.030

.057

.10

60

.021

.025

.041

.077

.14

70

.029

.035

.057

.11

.20

80

.042

.050

.083

.16

.28

90

.064

.077

.13

.24

.43

100

.10

.12

.20

.38

110

.17

.21

.34

.63

120

.30

.37

.60

1.1

+ I]exp(s.09

(~)

T.

Ambient Temperature (C)

s=

Ratio of Operating to Rated Voltage

5 )

Operating voltage is the sum of applied D.C. voltage

and peak A.C. voltage.

I
T

.0067

,,=.00254[(:)3

:=,0
1]:~.og::;;7;~

.0055

.9
.047
.057
.072
.094
,13
.18
.26
.40
.64

100

O:[($;:+

MIL-HDBK-217F

CAPACITORS,

10.14

Capacitate

Factor - WV

ELECTROLYTIC,

Environment

Capacitance, C (@)

Cv

2.5

1.0

1700

1.3

Factor - YC_
k

GB

1.0

GF

2.0

.70

400

ALUMINUM

Environment

.40

55

GM

12
6.0

Ns
r

Cv

FIXED,

NU

17

5500

1.6

AK

10

14,000

1.9

AIF

12

2.2

*UC

28

32,000

UF

35

65,000

2.5

RW

27

120,000

2.8

= .34c08

Quality Factor - YCQ

Quality

%Q

.030

.10

.30

1.0

Non-Est. Ret.

3.0

Lower

10

SF

.50

MF

14

ML

38

CL

690

MIL-HDBK-217F

10.15

CAPACITORS,

FIXED,

ELECTROLYTIC

ALUMINUM

DESCRIPTION
Aluminum, Dry Electrolyte, Polarized

STYLE
CE

SPECIFICATION
MIL-C-62

(DRY),

Ap = XbXcvZQzE

Hours

~ailures/106

Base Failure Rate - ~

Quality Factor - Xfi

(T
= Roc.- ----Mar .Ratt?ch
.-. -.-,
\ --

stress
TA (C)

.1

.3

.0064

::
30
40
50
60

.0078
.0099
.013
.018
.026
.041

.0074
.009
.011
.015
.021
.030
.047

Quality

.5

.7

.9

.011
.014
.017
.023
.031
.046
.071

.020
.024
.030
,040
.055
.08
.12

.034
.042
.053
.070
.096
.14
.22

7rQ

3.0

MIL-SPEC

10

Lower

Environment

Factor - n=
L

Environment

:~o

:1:0
(i);;

;5)3

T.

Ambient Temperature (C)

s-

Ratio of Operating to Rated Voftage

Capacitance,

C (vF)

3.2
62

400
1600
4800
12,000
26,000
50,000
91,000

~cv

= .32C

GF
GM
N~

Operating voltage is the sum of applied D.C. vottage

and peak A.C. voltage.

Capacitance

GB

Factor - Xcv
~cv
.40

n~

1.0
2.0

12
6.0

Nu

17

*IC

10

IF

12

*UC

28

*UF

35

*RW

27

.50

SF

.70
1.0
1.3
1.6
1.9
2.2
2.5
2.8

~F

14

ML

38

c1

0.19
I

690

MIL-HDBK-217F

10.16

SPECIFICATION
MIL-C-81

CAPACITORS,

VARIABLE,

CERAMIC

DESCRIPTION
Variable, Ceramic

STYLE
Cv

kp = kbfiQZE Failures/l

06 Hours

Base Failure Rate - ~

(T= 85C Max Rated)
1 Styles CV 11, 14, 21,31,
32,34,40,

(MIL-CTA (Z)

.1

o
10
20
30
40
50
60
70
1

.0030
.0031
.0033
.0036
.0041
.0047
.0058
.0076
.011

80

Ab=.00224[(~)3
T
s.

.3

.5

.016
.017
.018
.020
.022
.026
.031
.041
.058

.086
.069
.073
.080
.089
.10
.13
.17
.24

+ 1].xp(l.,,

Quality Factor - nQ
41)

.7

.9

.18
.10
.20
.21
.24
.20
.34
.4s
.63

.37
.39
.41
.45
.50
.59
.72
.94
1,3

(~)101)

(T= 125C Max Rated)

(M IL-C-81 Styles CV 35, 36)
stress
.1
.3
.5
.7
.0028
.0028

.015
.015

Environment

Factor - n=
L

Environment

xcL

GB

1.0

GF

3.0

Ns
Nu

13
8.0
24
6.0

37

.9

*UF

70
36

.061
.062

.16
.17

.35
.35

RW
SF

.0029

.016

.064

.17

.36

.016
.017
.018
.019
.021
.023
.027
.033
.043
.059

.066
.068
.072
.077
.084
.095
.11
.14
.17
.24

,18
.18
,19
.21
.23
.25
.30
.36
.47
.64

.37
.39
.41
.44
.48
.54
.63
.76
.98
1.4

T=
s=

20

Uc

.0030
.0031
.0033
.0035
.0038
.0043
,0050
.0062
.0079
.011

~-.00224[(~)3+

Lower

10

;:

iF

30
40
50
%
80
90
100
110
120

MIL-SPEC

AC

Base Failure Rate - ~

x~

GM

Ambient Temperature (C)

Ratio of Operating to Rated Voftage

Operating voltage is the sum of applied D.C. vottage

and peak A.C. voltage.

TA (C)

Quality

.40

MF
ML

52

CL

l]exp(l.59(~)101)

Ambient Temperature (C)

Ratio of Operating to Rated Voltage

Operating vottage is the sum of applied D.C. voltage

and peak A.C. voltage.

10-27

MIL-HDBK-217F

10.17

CAPACITORS,

VARIABLE,

SPECIFICATION
MIL-C-14409

PISTON

STYLE
Pc

TYPE
DESCRIPTION
Variable, Piston Type, Tubular Trimmer

Lp = XbXQnE Failures/l

OG Hours
Quality Factor - nQ

Base Failure Rate - ~

(T. 125C Max Rated)
(MIL-C-14409 Styles G, Ii, J, L, T)
Stress
.1
.3
.5
.7

TA (C)

.0030
.0041
.0055
.0075
.010
.014
.019
.025
.034
.047
.063
.086
.12

1:

20
30
40
50
60
70
80
90
100
110
120
$=7.3

.0051
.0070
.0094
.013
.017
.024
.032
.043
.059
.079
.11
.15
.20

X1 O-7 [(~)3+

.013
.010
.024
.033
.044
.060
.082
.11
.15
.20
.27
.37
.51

l]exP(1201

.063
.085
.11
.16
.21
.29
.39
.53
.71
.96
1.3
1.8
2.4

(%%)

~er~ting

vohage is the sum of applied

and pe ak A.C. voltage.

Iv

Lower

Environment

GB

)
,

D.C. vohage

GF

3.0

GM

-+-l

Ns
Nu

Alc
IF

Base Failure Rate - ~

150C Max Rated)
(MIL-C-1 4409 Characteristic
(T=

0)

,3
.0032
.0042
.0056
.0074
.0099
.013
.018
.023
.031
.041
.055
.073
.097
.13
.17
.23

.1

.0019
.0025
.0033
.0044
.005s
.0077
.010
.014
.018
.024
.032
.043
.057
.076
.10
.13

10
20
30
40
50
%
80
90
100
110
120
130
140
150

.5
.0081
.011
.014
.019
.025
.034
.045
.060
.079
,11
.14
.19
,25
.33
.44
,59

.7
.019
.025
.034
.045
.060
.079
.11
.14
.19
.25
.33
.44
.59
.78
1.0
1.4

.9
.038
.051
.068
,09
.12
.16
.21
.28
.38
.50
.67
.89
1.2

3.0
4.0
20

UF

30

RW

32

SF

4::
2.8

.50

MF

18

ML

46

c,

18

%c

Stress

Factor - ZE

Environment

Ambient Temperature (C)

Ratio of Operating to Rated Vottage

T=

ZQ

MIL-SPEC

.9

.031
.042
.057
.077
.10
.14
.19
.26
.35
.48
.65
.88
1.2

Quality

830

11ex421
(-))

kb = 7.3 x 10-7

[(33+

(C)
Ambient Temperature
s=
Ratio of Operating to Rated Vottage
Operating voltage is the sum of applied D.C. voltage
and peak A,C. voltage.
T

--

.-

. ..

----

-r

----

--

I
I

MIL-HDBK-217F

10.18

SPECIFICATION
MIL-C-92

1A (C)

- ...-.

. .-. --,

.3

.5

.0074

.013

10

.010

20

.7

.9

.032

.076

.15

.017

.044

.10

.21

.014

.023

.059

.14

.28

30

.018

.031

.08

.19

.38

40

.025

.042

.11

.26

.52

50

.034

.057

.15

.35

.70

60

.046

.078

.20

.47

.94

70

.062

.10

.27

.63

80

.083

.14

.36

.85

Failures/l

06 Hours

1.0

GF

3.0

%
NU
*IC

XIO-6[(-&)3+

1]

.wfos

Ambient

Temperature

s=

Ratio of Operating

13
8.0
24
6.0

IF

10

Uc

37

*UF

70

1.3

RW

36

1.7

SF

(~)

%
T-

nE

GB

NS

- 1.92

TRIMMER

Environment

stress

.1

AIR

Environment Factor - z~

Base Failure Rate - ~

--

VARIABLE,

DESCRIPTION
Variable, Air Trimmer

STYLE
CT
kp = kb~QmE

CAPACITORS,

.50

MF

20

ML

52

CL

950

(C)

to Rated

Voltage

Operating voltqe
is the sum of applied
and peak A.C. voltage.

D.C. vottag~

Quality Factor - XQ
Quality

MIL-SPEC
Lower

~Q

5
20

10-29

------

r--

MIL-HDBK-217F

10.19

CAPACITORS,

VARIABLE

SPECIFICATION
M IL-C-23 183

AND

FIXED,

GAS

OR

VACUUM

STYLE

DESCRIPTION

CG

Gas or Vaa.mm Dielectric, Fixed and Variable, Ceramic or

Glass Envebpe

Lp = kbXcFXQnE

Failures/l

OG Hours

Base Failure Rate - ~

Base Failure Rate - ~

(T. 85C Max Rated)

(Styles CG 20,21,30,31,32,40-44,

stress
0

10
20
30
40
50
60
70
80

.1

.3

.015
.016
.017
.018
.020
.024
.029
.038
.054

.081
.084
.090
.098
.11
.13
.16
.20
.29

.5

.88
,92
.98
1.1
1.2
1.4
1.7
2.2
3.2

Ambient Temperature
(C)
Ratio of Operating to Rated

s=
Operating
and peak

voltage

1.9
1.9
2.1
2.2
2.5
2.9
3.6
4.7
6.6

Vottage

is the sum of applied

D.C. voltage

A.C. voltage.

Base Faiture Rate - ~

(T= 100C Max Rated)
(Styles CG 65, 66)
Stress

.1
o

1:

30
40
50
60
70
80
90
100

~=.0112
T=

s.

.014
.015
.015
.016
,018
.020
.022
.027
.034
.045
.066

[(+)3+

.3

.078
.080
.084
.088
.095
.11
.12
.14
.18
.24
.36

.7

.9

.85
.87
.91
.96
1.0
1.2
1.3
1.6
2.0
2.7
3.9

1.8
1.8
1.9

.5

.30
.33
.34
.36
.39
.43
.49
!59
.74
.99
1.5

l]exP(l.59

Ambient Temperature
(C)
Ratio of Operating to Rated

;;;
2.4
2.8
3.3
4.2
5.6
8.2

(~)lol)

Voltage

Operating vottage is the sum of applied

and oeak A.C. voltaae.

10-30

.1

.3

.5

.7

.9

.014

.075

.37

.82

1.7

10

.014

.077

.31

.83

1.8

20

.014

.078

.32

.85

1.8

30

.015

.08

.33

.88

1.9

40

.016

.084

.34

.91

1.9

50

.016

.088

.36

.96

2.0

60

.018

.095

.39

1.0

2.2

70

.019

.10

.42

1.1

2.4

80

.022

.12

.48

1.3

2.7

90

.025

.14

.55

1.5

3.1

100

.031

.17

.68

1.8

3.8

110

.04

.21

.87

2.3

4.9

120

.055

.29

.9

11(15
(=)O1;

[(~)3+
T=

.7

.33
.34
.37
.40
.45
.52
.64
.83
1.2

Ab=.o112

(T= 125C Max Rated)

(stvl@
-- .50)
-.-,
\ -.= .- CG
Strm8

51,60-64,

D.C. voltage

T=
s=

1.2

Ambient TemWrature (C)

Ratio of Operating to Rated Vottage

Operating vottage is the sum of applied D.C. vottage

and pa ak A,C. voltage.

I .!

.,.

... . .

... .,,

,..

MIL-HDBK-217F

I
10.19

CAPACITORS,

--

C F
.10

Fixed

AND

Environment
%
GF

1.0

Variable

GM
Ns
QuaIii

Factor- XQ

Quality

~Q

MIL-SPEC

3.0

Lower

FIXED,

Environment

Configuration Factor - TCCF

Conf~ratkm

VARIABLE

20

GAS

OR

VACUUM

Factor - fiE

~E
1.0
3.0
14
8.0

Nu

27

AC

10

IF

18

*UC

70

*UF

108

RW

40
.50

SF
MF

NIA

ML

NIA

cL

NIA

MIL-HDBK-217F

10.20

CAPACITORS,

EXAMPLE

Example
A 400 VDC

Given:

rated capacitor

type CQ09A1 KE153K3

is being used in a fixed ground

environment, 59C component ambient temperature, and 200 VDC applied with 50 Vrms
@ W Hz.
The Capadtor
specification.

iS Ming

procured

in full accodance

with the applicable

The letters CQ- h the type designation hdkate that the specification is MIL-C-19978 and that it is a NonEstablished Reliability qualii level. The Ist K in the designation indicates characteristic K. The E in
the designation corresponds to a 400 vott DC rating. The 153 in the designation expresses the
capacitance

in pioofarads.

The first two digits are signifiint

and the third is the number of zeros to follow.

Therefore, this capacitor has a capacdance of 15,000 picofarads. (NOTE: Picos 10-12, p = 10~

The appropriate model for CQ style capacitors is given in Section 10.3. Based on the given information
the following model factors are determined from the tables shown in Section 10.3. Voltage stress ratio
must account for both the applied

DC volts and the peak AC vottage,

S=

.68

lb

.0082

hence,

DC Volts Applied + ~2 (AC Volts Armlied~ =

DC Rated Voltage

Substitute S = .68 and TA = 55C into equatbn shown

with CharacteristicK ~ Table.

7ECV

7CQ

10

~E

2.0

10-32

.94

= ~

Use

Table Equation (Note 15,000 pF = .015 pF)

ICcv nQ XE = (.0082)(.94)(1

O)(2) = .15 FailuresJl 06 Hours

MIL-HDBK-217F
11.1

SPECIFICATION

STYLE
TF
TP

MIL-T-27
MIL-T-21038
MIL-T-55831

INDUCTIVE

DEVICES,

TRANSFORMERS

DESCRIPTION
Audio, Power and High Power Pulse
Low Power Pulse

IF, RF and Discriminator

Xp = lb~QXE

06 Hours

Failures/l

,
Base Faiture Rate - ~

Maxinwm Rated OperatingTemperature (C)

~~ 1

TH~ (%)
30

.0024
.0026
.0028
.0032
.0038
.0047
.0060
.0083
.012
.020
.036
.075

35

40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
180
185
NOTE:
1

\..oolat?xp

.0023
.0023
.0024
.0025
.0027
.0029
.0032
.0035
.0040
.0047
.0057
.0071
.0093
.013
.019
.030

}1s are valtd onl

fiHS
+ 273\
---=
\

>1706

1705

.0016
.0016
.0016
.0016
.0017
.0017
.0017
.0017
.0017
.0017
.0017
.0017
.0018
.0018
.0018
.0018
.0019
.0019
.0019
.0020
.0020
.0021
.0021
.0022
.0023
.0024

.0018
.0018
.0019
.0019
.0020
.0020
.0021
.0021
.0022
.0023
.0024
.0024
.0025
.0026
.0027
.0028
.0030
.0031
.0032
.0034
.0036
.0038
.0040
.0042
.0044
.0047
.0050
.0053
.0056

.0021
.0022
.0022
.0022
.0023
.0023
.0023
.0024
.0025
.0026
.0027
.0028
.0029
.0031
.0033
.0035
.0038
.0042
.0046
.0052
.0059
.0068
.0079
.0095
.011
.014

.0022
.0023
.0024
.0025
.0026
.0027
.0029
.0030
.0033
.0035
.0039
.0043
.0048
.0054
.0062
.0072
.0085
.010
.013
.016
.020

.0025
.0026
.0027
.0029
.0030
.0032

Themo

, =4

,~3

1052

lSs

if THS IS not above the temperature rating for a given insulation class.
MIL-T-27 Insdatmn Class 0, MIL-T-21038

Insulation Class C?,and MlL-T-5563I

MIL-T-27 Insulation Class R, MIL-T-21 038 Insulation Class R, and MIL-T-55831

3
4

+-18*F=)87

MIL-T-27 Insulation Class S, MlL-T-2I 038 Insulation Class S, md MIL-T-S5631

+=m2exc:~273)i0

MIL-T-27 Insulation Class V, MIL-T-21 038 Insulation Class T, and MIL-T-s5631

~-om-(:))

~-mwx(TH:;:73)84

Class O.

Insulation Class A.

Insulation Class B.

Insulation Class C,*

MIL-T-27 Insulation Class T and MIL-T-21 038 Insulation Class U.*

MIL-T-27 Insulation Class U and MIL-T-21038

tnsuhon

. Hot Spot Temperature (%),

See Se&h

11.3.

Rotor to Transformer

Insulanon Class V

Application

Not-

tor Oatormlnstlon

of Irwulatlon

Class
I

11-1

MIL-HDBK-217F

11.1

INDUCTIVE

DEVICES,

TRANSFORMERS

Quality Factor - ~
Family Type
Pulse Transformers

1.5

Audio Transformers

3.0

I Lower
I
5.0
I
7.5

8.0

30

Power

Transformers

1 MIL-SPEC

and Filters

RF Transformers

12

Refer to Transformer
Appllcatlon
Determlnatlon
of Family Typ.

Environment

30

Note

Factor - ZE

Environment

TRANSFORMER
APPLICATION
NOTE:
Insulation Class and Family Type
Determination

MIL-T-27

Example
R

TF

I
MIL-T-27

I
Grad,

GF

6.0

Alc
IF

12

~
symbol

Are:

Power Transformer

and Filter:

Audio Transformer:

10 thru 21, 50 thru 53

Pulse Transformer:

22 thru 36, 54

Example
4

01 thru 09, 37 thru 41

16

Grade

MIL-T-55631.

8.0

Type I

Type

II

Type

Ill

Grade

.50

Grade

13

Grade 3

34

Class O

610

Grades

and Classes.

For Use When immersion and

Moisture Resistance Tests are
Required
For Use When Moisture Resistance
Test is Required
For Use in Sealed Assemblies

Class A

Class B

Class C

Types,

Intermediate
Frequency Transformer
Radio Frequency Transformer
Discriminator
Transformer

24

SF

I
Insulation

The Transformers are Designated

with the following

9.0

X11 OO8COO1

Class

6.0

UF

Designation
Q

5.0

7.0

MF

Fatity

Family Type Codes

MIL-T-21038

*UC
RW

85oC Maximum Operating

Temperature
105C Maximum Operaiing
Temperature
12SeC Maximum Operating
Temperature
> 125C Maximum Operating
Temperature

The class denotes the maximum operating

temperature
(temperature
rise plus maximum
ambient temperature).

11-2

576

for

TP

Nu

Imldabrl
Clasa

MI L-T-21038
1.0

Ns

01

~E

GB

Deslgnatlon

MIL-HDBK-217F

11.2

DEVICES,

COILS

DESCRIPTION
Fixed and Variable, RF
Moided, RF, Est. Rel.

STYLE

SPECIFICATION
MIL-C-15305
MIL-C-3901O

INDUCTIVE

Xp = kbnc7cQ7LEFailures/l 06 Hours
Construction Factor - Xc

Base Failure Rate - ~

Maximum Operating Temperature ~C)
TH~ (oC)
30
35
40
45
50
E
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150

851
.00044

1052
.00043

.00039

.00048

.00044

.0004

.00053
.0006
.00071
.00087
.0011
.0015
.0023
.0037
.0067
.014

.00046
.00048
.00051
.00055
.0006
.00067
.00076
.00089
.0011
.0013
.0018
.0024
.0036
.0057

.00042
.00043
.00045
.00048
.00051
.00054
.00058
.00063
.00069
.00076
.00085
.00096
.0011
.0013
.0015
.0018
.0022
.0028

1253

1504
.00037
.00037
.00037
.00038
.00038
.00039
.0004
.00041
.00042
.00043
.00044
.00046
.00047
.0005
.00052
.00055
.00059
.00063
.00068
.00075
.00083
.00093
.0011
.0012
0014

Construction
Fixed
Variable

Zc

1
2

Quality Factor - ~
Quality

7rQ

.03

.10

.30

M
MIL-C-15305
Lower

1.0
4.0
20

NOTE: The models are valid onty if THS is not above

the tern perature rating for a given insulation class.

~=mmex(:~:)
,n$u~onc,-$o
MlL-C- 15305

=mgexp(:;:)

MlL-C-l 5305
InsulationClass A and
MIL.C-3901 o
,~u~~c,wA,

3.
MIL-C-15305
InsulationClass B and

~--19exp(TH::27a)e7
MIL-C-3901O
InsulationChseeB.

4.

MIL-C-I 5305
InsulationClass C and
MIL-C-3901O
InsulationClass F .

HS

= Hot Spot Temperature(C), See Section f 1.3.

Refer to Coil Appllcetlon Note for Determhmtlon of

Inaulatlon Claes.

11-3

MIL-HDBK-217F

11.2

INDUCTIVE

DEVICES,

COILS

COIL

Environment Factor - ZE

NOTE:
Infsulatlon Class
From Part Designation

APPLICATION

Determination
~E

Environment
GB

1.0

GF

4.0

%
Ns
Nu

001

I
5.0

MIL--G153O5

I
Insulation
Class Code

Famify

16
5.0

IF

7.0

*UC

6.0

*UF

8.0
24

SF

11-4

LT

12

Ac

RW

MlL-C-l 5305. All parts in this specification are

R.F. wils. An example type designation is:

.50

MF

13

ML

34

CL

610

The codes used for the Insulation C&ss are:

1,2,3
Class C:
4, 5, 6
Class B:
7, 8, 9
Class O:
10,11,12
Class A:

MI L-C-3901 O. An example type designation per

this specification is:
M
I
Military
Designator

39010/01

Document
Sheet
Number

Insulation
class

MIL-HDBK-217F

11.3

INDUCTIVE

DEVICES,

DETERMINATION

OF

HOT

SPOT

TEMPERATURE

Hot Spot temperature can be estimated as follows:

THS=TA+

1.1 (AT)

where:
THS

Hot Spot Temperature

TA

Inductive Device Ambient Operating Temperature

AT

Average Temperature

(C)
(C)

Rise Above Ambient (C)

AT can either be determined by the appropriate Temperature Rise- Test Method paragraph in the device base
specification (e.g., paragraph 4.8.12 for M IL-T-27 E), or by approximation using one of the procedures
described below.
AT Approximation
Infnrmatinn
..
... .. ... .
..

1.

,.,

AT Annrqximation
w
.

Knnwn
,....

-,

MIL-C-3901 O Slash Sheet Number

MIL-C-39010/l C-3C, 5C, 7C, 9A, 10A, 13, 14

AT = 15C
AT = 35C

tvllL-c-39010/4C, 6C, 8A, 11, 12

2.

Power Loss
Case Radiating Surface Area

3.

Power Loss
Transformer Weight

4.

Input Power
Transformer Weight
(Assumes 80% Efficiency)

w~

Power Loss (W)

Radiating Surface Area of Case (in2).

wt.

Transformer Weight (Ibs.)

w,

Input Power (W)

.yp.

AT=

125 w@

AT=

11.5 WL/(Wt.).6766

AT = 2.1 w,/(w@66

See below for MIL-T-27

Case Areas

NOTE: Methods are listed in preferred order (i.e., most to least accurate). MIL-C-3901 O are microminiature devices with surface areas less than 1 in2. Equations 2-4 are applicable to devices with
surface areas from 3 in2 to 150 in2. Do not include the mounting surface when determining radiating
surface area,

Case
AF
AG

MIL-T-27 Case Radiating Areas (Excludes Mounting Surface)

Case
Case
Area (in*)
Area {in2)
4
GB
33
LB
7
43
GA
LA

Area (in2)
82
98

AH

11

HB .

42

MB

98

AJ
EB
EA
FB
FA

18

HA
JB
JA
KB
KA

53
58
71
72
84

MA
NB

115
117

::

139
146

;;
25
31

11-5

MIL-HDBK-217F
I

12.1

ROTATING

DEVICES,

MOTORS

I
I

The following failure-rate model appiies to motors with power ratings betow one horsepower. This model is applicable to
polyphase, capacitor start and run and shaded pole motors. Its application may be extended to other types of fractional
horsepower motors utilizing rolling element grease packed bearings. The rndel is dictated by two failure modes, bearing
failures and winding failures. Application of the model to D.C. brush motors assumes that brushes are inspected and
replaced and are not a failure mode. Typical appkations
include fans and Mowers as well as various other motor
applications. The model is based on Referenoe 4, which oontains a more comprehensive treatment of motor life precktion
methods. The reference should be reviewed when bearing loads exceed 10 percent of rated bad, speeds exceed 24,000
rpm or motor back include motor speed slip of greater than 25 percent.
The instantaneous failure rates, or hazard rates, experienced by motors are not oonstant but increase with time. The
failure rate model in this sectbn is an average failure rate for the motor operating over time period t. The motor operating
time period (t-hours) is selected by the analyst. Each motor must be replaced when it reaches the end of this perbd to
make the calculated ~ valid. The averaga failure rate, ~, has been obtained by dividing the cumulative hazard rate by t,
and can be treated as a constant failure rate and added to other part failure rates from this Handbook.

~2
%[

UB 3+~

x 106 Failures/l 06 H0ur6

1

Bearing & Winding Characteristic Life - aB and aw

TA ~C)

aB (Hr.)

-40
-35
-30
-25
-20
-15
-lo
-5
o
5
10
15
20
25
30
35
40
45
50

aB

aw

310
310
330
370
460
660
1100
1900
3600
6700
13000
23000
39000
60000
78000
86000
80000
68000
55000

10 (

(Hr.)

1.9e+08
1.2e+08
7.4e+07
4.78+07
3.1 e+07
2.0e+07
1.4e+07
9.2e+06
6.4e+06
4.5e+06
3.2e+06
2,3e+06
1.6e+06
1.2e+06
8.9e+05
6.60+05
5.oe+05
3.8e+05
2.9e+-5

2357
2534 7A + 273
)

+
2010 (

[
2357
[ TA + 273

aB (Hr.)

55
60
65
70
75
80
85

44000
35000
27000
22000
17000
14000

2.3e+05
1.8e+05
1.4e+05
1.1 e+05
8.8e+04
7.0e+04

11000

5.7e+04

9100
7400
6100
5000
4200
3500
2900
2400
2100
1700
1500

4.6e+04
3.8e+04
3.le+04
2.5e+04
2.1 e+04
1.8e+04
1.5e+04
1.2e+04
1.oe+04
8. 9e+03
7.5e+03

E
100
105
110
115
120
125
130
135
140

1
4500
7A + 273

+ 300

aw

(Hr.)

-1
1

1 .83]

aw

10

aB

Weibull Characteristic Life for the Motor Bearing

aw

Weibull Characteristic Life for the Motor Windings

TA

Ambient Temperature (C)

Motor Operating Time Period (Hours)

NOTE:

TA (oC)

See next page for method to calculate aB and aw when temperature is not constant.

12-1

MIL-HDBK-217F

12.1

ROTATING

DEVICES,

MOTORS

%.ala

Ilation Or cYcled eWr*ure

The following equation can be used to calculate a weghted

(e.g., for bearings substitute aB for all as in equation).

characteristic life for both bearings and windings

h1+h2+h3+------hm
hm
+
al

+
a2

+-------
a3

where:
either (%Bor aw

a=
h,

Time at Temperature

h2

Time to Cycle From Temperature

h3

Time at Temperature

T3

hm

Time at Temperature

Tm

al

Bearing

(or Winding)

Life at T,

Bearing

(or Winding)

Life at T2

T,

T, + T3
NOTE:

T2=2,

T, to T3

T3 + T,
T4=2

T3
i=
T2
T1
hl

h2

h3

Hours
Thermal

12-2

(h)
Cycle

am

MIL-HDBK-217F

12.2

ROTATING

DEVICES.

SYNCHROS

AND

RESOLVERS

DESCRIPTION
Rotating Synchros and Resolvers
Lp = XbKSZNXE
NOTE:

Synchros and resolvers are predominately used in service requiring only slow and infrequent motion.
M-echanical wearout problenis are infrequent so that the electrical failure mode dominates, and no
mechanical mode failure rate is required in the model above.

Number Of Brushes Factor - ~N

Base FaiUre Rate - ~

TF (%)

Tr (C)
30
35
40
45
50
55
60
65
70
75
80

%
TF

Failures/l 06 Hours

85
90
95
100
105
110
115
120
125
130
135

.0083
.0088
.0095
.010
.011
.013
.014
.016
.019
.022
.027

Number of Brushes
.032
.041
.052
.069
.094
.13
.19
.29
.45
.74
1.3

= .00535 exp
=

Synchro

3.2

~E

2.0
12
7.0
18

Aic

4.0

IF

6.0

*UC

16

UF

25

*RW

26

Size 18 or
Larger

SF
MF

14

1.5

ML

36

2.25

1.5

CL

680

Size 8 or
Smalier

Size 10-16

2
3

I
Resolver

GF

Nu

DEVICE
TYPE

2.5

1.0

NS

%s

GB

Frame Temperature (C)

Size Factor - XS

1.4

Environment

GM

If Frame Temperature is Unknown Assume

TF .40 C + Ambient Temperature

Environment Factor - YIC=

)85

(T~:~3

%N

.50

12-3

MIL-HDBK-217F

12.3

ROTATING

DEVICES,

ELAPSED

TIME

METERS

DESCRIPTION
Elapsed Time Meters

kp = kbycE

Base Failure Rate - ~

Failures/l 06

Hours

Environment Factor - Xr

Type

k~

A.C.

20

Inverter Driven

30

Environment
%

1.0

GF

2.0

GM
Commutator D.C.

80

N~
Nu

Temperature

Stress Factor - ZT

Operating T (C)/Rated T (C)

XT

12
7.0
18

*IC

5.0

IF

8.0

*UC
o to

ZE

16

.5

.5

UF

25

.6

.6

*RW

26

.8

.8

1.0

1.0

SF

12-4

.50

MF

14

ML

38

CL

NIA

MIL-HDBK-217F

12.4

ROTATING

DEVICES,

EXAMPLE

Example
Fractional Horsepower Motor operating at a thermal duty cycle of: 2 hours at 10OC, 8
hours at 20C, 0.5 hours from 100C to 20C, and 0.5 hours from 20C back to 100C.
Find the average failure rate for 4000 hours operating time.

Given:

The basic procedure is to first determine operating temperature at each time intewai
temperature when traversing from ow temperature to another, e.g. T2 = (100 + 20/2 = ~c.
aB and aw at each temperature
to use in the ~

ati

then use these vakes to determine a wei@kf

(or averge
~te~in

average ~

and aw

e~ation.

T,

1 OOC;

aB

6100 hours;

aw

31000

h2 = h4 = 0.5 hr.

T2

60%;

aB

35000

hOUfS;

aw

180000

h3

T3

20C;

aB

39000

hours;

aw

1600000 hours

h,

2 hr.

8 hr.

aB

aw

2
6100

2 +0.5+8+0.5
0.5
8
+ 35000
+ 39000

2
31000

2 +0.5+8+0.5
0.5
8
+ 180000
+ 1600000

hOUR

= 19600 hours

0.5
+ 180000

= 146000

hOUB

(3++0
(

(4000)2

(19600)3

0.5
+ 35000

hours

9.0 FaihxeW

1
+ 146000

X106
)

06 Hours

12-5

MIL-HDBK-217F

RELAYS,

13.1
SPECIFICATION
MIL-R-5757
MIL-R-6106
MI L-R-19523
MIL-R-39016

MIL-R-19648
MIL-R-83725
MIL-R-83726

DESCRIPTION
Mechanical Relay
(Except Class C, Solid State Type)

Lp = &XLZCZCYCXFXQXE
Base Failure Rate - ~
Rated

TA (W)

06 Hours
Load Stress Factor - XL

.0060
.0061
.0063
.0065
.0068
.0072
.0077
.0084
.0094
.011
.013
.016
.020

%
75
80
85
90
95
100
105
110
115
120

Failures/l

Temperature

85%+

30
35
40
45
50
55
60

MECHANICAL

125

125c~
.0059
.0060
.0061

Resist ive

.05
.10
.20
.30
.40
.50
.60
.70
.80
.90
1.00

.0062
.0064
.0066
.0068
.0071
.0074
.0079
.0083
.0089
.0097
.011
.012
.013
.015
.018
.021
.025
.031

Load Typo -

XL = @Xp

3.

,8

; :Z
2.72
9.49
54.6

S2
XL = exp

s2~=
~

~L = ep

()

()
2.

Lamp3

~2

1.

lnductive2
1.02
1.06
1.28
1.?6
2.72
4.77
9.49
21.4

1.00
1.02
1.08
1.15
1.28
1.48
1.76
2.15
2.72
3.55

Operatino Load Current

Rated Resistive Load Current

()

which switch two different load types,

evaluate XL for each possible stress load type

For single devices

combination and use the worse case (largest ZL).

1%=

005excA::73)57
00MexcAJ~73)04

Cycling Factor - ~YC

Cycle Rate

2%=
TA

21.0
<1.0

Ambient Temperature (oC)

Cycle Rate
(Cycles per Hour)

Contact Form Factor - ~

r

to Active Conducti ng Contacts)

Contact Form
~c
I

(Applies

DPST

SPDT
3PST
4PST
DPDT
PDT
4PDT

CYC
(MI L-SPEC)
i-io~
10
0.1

(Cycles per Hour)

6PDT

1.50
1.75
2.00
2,50
3.00
4.25
5.50
8.00

WC

(Lower

>1000
10-1000

NO~

:Values of ZCYC

Quality)

Cycles per Hour 2

100
)
(

Cycles per Hour

10

for cycling rates beyond

the

basic design limitations of the relay are not valid.

Design specifications should be consulted prior to

Vauation
f CYC.
13-1

I
II

h41L-HDBK-217F

13.1

MECHANICAL

RELAYS,

Oualhy

i
~tion

con-

Construction Type

.10

R
P
x

.30
.45

u
M
L
Non-Est.Rol.

.60

Dry Rwd

Ifbwmv[
d In@

:::
3.0

I MofcuwWottod

18

6
11131.

I
12

6
5

ArmuW(lmngand

Envimnmont Factor -~

10

$tE
,

Environment

MIL-SPEC

GB

1.0

5.0

ArrnmW@(081anc0d

A~

7.0

15

9.0

20

Auc

11

20

%F

12

36

46

140

.50

SF
%

1.0

Elut mfiic

Tiu90Dd8y,

L&w I
Mching,
MqymtiZ
5-20
w
Mdiurn

IPm-

72

25

%
cl

66

CWMctom
m
Cwu?t)

,.

Uucury Wmttod
B8bcod Arwnturo
vaCwm (Gk!m)
Vaafwl (CkmmiC)
An
I short]

12

1 -1-1
10
10
40

5
5
20
5

10

11

WA

WA

78

27

*IC

MwcuryWetted

24

8.0

Hqh Spood

20
20
100

NS

Iw

B8mcul Ammtuf6110
10
AwnmJro(short)
100

15

GM

Poi8fizod

2.0

2.0

LowOrOudity

=1

(short)
Wchankd Latching
OatuK#d
. Ann8tufo

1~

2
7
12

10

-.

20
1

10

MIL-HDBK-217F

13.2
SPECIFICATION
MIL-R-28750
MIL-R-83726

RELAYS,

SOLID

STATE

AND

TIME

DELAY

DESCRIPTION
Relay, Solid State
Relay, Time Delay, Hybrid and Solid State

The most accurate method for predicting the failure rate of solid state (and solid state time delay) relays is to sum
the failure rates for the individual components which make up the relay. The individual component failure rates
can either be calculated from the models provided in the main body of this Handbook (Parts Stress Method) or
from the Parts Count Method shown in Appendix A, depending upon the depth of knowledge the analyst has
about the components being used. If insufficient information is available, the following cfefautt model can be
used:
~

= ~X@E

Failure@106 Hours

Base Faiiure Rate - ~

Environment Factor - Xr

Relay Type

Environment

Solid State

.40

Solid State Time Delay

.50

GB

1.0

GF

3.0

GM
Hybrid

.50

MIL-SPEC
Lower

6.0

Nu

17

*tc

12

IF

19

Uc

21

1.0

*UF

32

4.0

RW

23

~Q

12

NS

Quality Factor - ZQ
Quality

nE

SF

.40

MF

12

ML

33

CL

590

13-3

,
+

MIL-HDBK-217F

14.1
SPECIFICATION
MIL-S-3950
MIL-S-8805
MIL-S-8834

SWITCHES,

Xp = kb7tcyc7cL7rc7zEFailures/l

Snap-action

Non-snap Action

MIL-SPEC
.00045

06 Hours

1 Lower Quality

Contact Form

xc

SPST
DPST
SPDT
3PST
4PST
DPDT
3PDT
4PDT
6PDT

1.0
1.5
1.7
2.0
2.5
3.0
4.2
5.5
8.0

.0027

PUSHBUTTON

Contact Form and Quantity Factor - xc

Base Failure Rate - ~

OR

DESCRIPTION
Snap-action, Toggle or Pushbutton,
Single Body

MIL-S-22885
MIL-S-83731

Description

TOGGLE

.034
.040

Cycling Factor - Zcyc

b

Switching Cycles
per Hour

*CYC

s I Cycle/Hour

1.0
Environment Factor - nE

>1 Cycle/Hour

Number of Cycles/Hour

Load Stress Factor - ~L

Stress
s
0.05
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0

Resistive
1.00
1.02
1.06
1.15
1.28
1.48
1.76
2.15
2.72
3.55
4,77

Load Type Induct ive

1.02
1.06
1.28
1.76
2.72
4.77
9.49
21.4

XL

exp (S/.8)2

for Resistive Load

XL

exp (S/.4)2

for Inductive Load

~L

exp (S/.2)2

for Lamp Load

GB

1.0

GF

3.0
18

GM

Lamp
1.06
1,28
2.72
9.49
54.6

Ns

8.0

NU

29

Alc

10

IF

18

Uc

13

*UF

22

RW

46

SF

Operating Load Current

Rated Resistive Load Current

s=

~E

Environment

.50

MF

25

ML

67

CL

1200

NOTE: When the switch is rated by inductive load,

then use resistive XL.

14-1

1,.,

*mm..

I,

,-

.AA1.4WI

.4

WI.*-

fi

.4Knw

MIL-HDBK-217F

14.2

SWITCHES,

BASIC

SENSITIVE

SPECIFICATION
MIL-S-88f)5

DESCRIPTION
Basic Sensitive

Ap =L7C
~ ~YCXLZE

Failures/l

06 Hours

Cycling Factor - ncyc

Base Failure Rate - ~

%=%JE%C

>0.002
~

= ~E

+ n~

inches)

(if Actuation Differential is

<0.002

inches)

n = Number of Active Contacts

Description

MIL-SPEC
.10

.10

%C

.00045

.23

bO

.0009

.63

Load StreSs Factor -XL

Resistive
1.00
1.02
1.06
1.15
1.28
1.48
1.76
2.15
2.72
3.55
4.77

:::
0.6
0.7
0.8
0.9
1.0

51 Cycle/Hour

>1 Cycle/Hour

1.0

Number of
Cycles/Hour
I

Load Type
Inductive
1.02
1.06
1.28
7.76
2.72
4.77
9.49
21.4

Environment Factor - xc
Environment
GB

1.0

GF

3.0

%
Ns
Lamp
1.06
1.28
2.72
9.49
54.6

18
8.0

29

*IC

10

IF
Uc

18
13

UF

22

*RW

46
.50

SF

s=

Operatin~ Load Current

Rated Resistive Load Current

nL

exp (S/.8)2

for Resistive Load

XL

exp (S/.4)2

for Inductive Load

~L

exp (S/.2)2

for Lamp Load

MF

25

ML

67

Ci

NOTE: When the Switch is Rated by Inductive

Load, then use Resistive XL.

I 4-L

CYC

Lower Quality

%E

Stress
s
0.05
0.1
0.2
0.3

Switching Cycles
per Hour

(if Actuation Differential is

1200

MIL-HDBK-217F

14.3

SWITCHES,

ROTARY

DESCRIPTION
Rotary, Ceramic or Glass Wafer, Silver Alloy Cotiacts

SPECIFICATION
MIL-S-3786

Failures/l

kp = lb7ccycKL7cE

06 Hours

Cycling Factor - ~yc

Base Failure Rate - ~

b

Switching Cycles
per Hour

Base failure rate model (~:

(for Cemrnc RF Wafers)

%=%E%F

(for Rotary Switch Medium

%=%E+~G

Power Wafers)
n = Nu~r

s 1 Cycle/Hour

> 1 Cycle/Hour

MIL-SPEC

Lower Quality

b E

.0067

.10

bF

.00003

.02

%G

.00003

.06

Number of Cycles/Hour

Resistive

1.00
1.02
1.06
1.15
1.28
1.48
1.76
2.15
2.72
3.55
4.77

Inductive

1.02
1.06
1.28
1.76
2.72
4.77
9.49
21.4

GB

1.0

GF

3.0
18

N~

Load Type

Environment

GM

Load stress Faotor - ~L

Lamp

1.06
1.28
2.72
9.49
54.6

Operating Load Current

Rated Resistive Load Current

XL

exp (S/.8)2

for Resistive Load

XL

exp (S/.4)2

for Inductive Load

exp (S/.2)2

for Lamp Load

~L =

Environment Factor - nv

s.

1.0
I

of Active co~ta~s

Description

Stress
s
0.05
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0

CYC

NOTE: When the Switch is Rated by Inductive Load,

then use Resistive XL.

8.0

Nu

29

Alc

10

IF

18

13

UF

22

RW

46

SF

.50

MF

25

ML

67

CL

1200

,.

MIL-HDBK-217F

14.4

SWITCHES,

THUMBWHEEL

SPECIFICATION
MIL-S-2271O
Line

DESCRIPTION
Switches, Rotary (Printed Circuit) (Thumbwheel, lnand Pushbutton)
Zp = (~1

CAUTION:

+ XN %2) XCYCZLXE

Failures/l

06 Hours

This model applies to the switching function only. The model does not consider the contribution of any
discrete components (e.g., resistors, diodes, lamp) which may be mounted on the switch. If significant

(relative to the switch failure rate), the failure rate of these devices must be calculated using the
appropriate sectionof this Handbook and added to the failure rate of the switch.
This model applies to a single switch seotion. This type of switch is frequently ganged to provide the
required function. The model must be applied to each section individually.

Cycfing Factor- XCYC

Base Failure Rate - kbl and %2

MIL-SPEC
Description
Lower Quality

Switching Cycles
Der Hour

I
I

%1

.0067

.086

b 2

.062

.089

Number

of Active Contacts

Load Stress Factor - ZI

1.00
1.02
1.06
1.15
1.28
1.48
1.76
2.15
2.72
3.55
4.77

0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0

> 1 Cycie/Hour

Environment

Number of Cycles/Hour

1.06
1.28
2.72
9.49
54.6

1.02
1.06
1.28
1.76
2.72
4.77
9.49
21.4

1.0

GF

3.0
18

N~

exp (S/.8)2

for Resistive

XL

exp (S/.4)2

for Inductive Load

XL

exp (S/.2) 2

for Lamp Load

8.0

Nu

29

Aic

10

IF

18

Uc

~E

GB
Lamp

XL

NOTE:

14-4

Load Type
inductive

Operating Load Current

Rated Resistive Load Current

s=

1.0

Environment Factor - x=
I

Resistive

s 1 Cycle/Hour

CYC

Factor - ZN

~N = Number of Active Contacts

Stress
s
0.05

13

U F

22

RW

46

.50

SF

Load

When the Switch is Rated by Inductive

Load, then use Resistive XL.

MF

25

ML

67

CL

1200

MIL-HDBK-217F

14.5
SPECIFICATION
M IL-C-55629
MIL-C-83363
MIL-C-39019
w-c-375

DESCRIPTION
Circuit Breakers,
Circuit Breakers,
Circuit Breakers,
Circuit Breakers,

SWITCHES,

CIRCUIT

BREAKERS

Magnetic, Unsealed, Trip-Free

Remote Control, Thermal, Trip-Free
Magnetic, Low Power, Sealed, TripFree Service
MoJded Case, Branch Circuit and Service

I
= &cnUZQKE

06 Hours

Failures/l

Base Failure Rate - ~

Quality Factor - XQ

Description

Lb

Quality

*Q

Magnetic

.020
I

Thermal

.038
I

Thermal-Magnetic

.038

MIL-SPEC

1.0

Lower

8.4

*
Environment Factor - n=
Environment

Configuration

Factor - XC

Configuration

SPST
DPST
3PST
4PST

1.0
2.0
3.0
4.0

Use Factor - m t
u

Use
Not Used as a Power
OtiOff Switch
Also Used as a Power
On/Off Switch

GB

1.0

GF

2.0

Zc

GM

15

Ns

8.0

Nu

27

An

7.0

IF

9.0

*UC

11

*UF

12

*RW

46

lru
1.0

SF
10

.50

MF

25

ML

66

CL

tWA
d

14-5

n7c

----

..A

Ann

MIL-HDBK-217F
I
I

15.1

CONNECTORS,

GENERAL

(EXCEPT

PRINTED

CIRCUIT

BOARD)

s
M
M
M
M
M
M
M
M
M
M

DESCRIPTION
SPECIFICATION
Rack and Panel
M IL-C-24308
M IL-C-28748
IL-C-28804
.M
M IL-C-83513
M
Cimdar
M L-C-5015
M IL-C-26482
M 1~
M L-C-38999
L-C-81 511
I
1JOTE: See following page for connector configurations.

EDIFICATION*
.C-3607
.-c-3643
.-C-3650
.-c-3655
.-C-25516
.-(2-3901 2
.-C-55235
.-c-55339
.-C-3767
.-C-22992

DESCRIPTION
Coaxial, RF

Power

Triaxial, RF

MIL-C-49142

Ap = AbZ~ZpnE Failures/l 06 Hours

APPLICATION
NOTE:
The failure rate model is for a mated pair of connectors. It is sometimes desirable to assgn
half of the overall mated pair connector (i.e., single connector) failure rate to the line replaceable unit and half to the
prediction to allow a
chassis (or backplane).
An example of when this would be beneficial is for input to maintainability
failure rate weighted repair time to be estimated for both the LRU and chassis. This accounting procedure could be
significant if repair times for the two halves of the connector are substantially different. For a single connector divide kp by
two.

Base Failure Rate - ~

Base Faiture Rate - ~

To (oC)

Al
.00006

.00008
;:
30
40
50
60
70
80

90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250

.00009
.00011
.00014
.00016
.00020
.00023
.00027
.00032
.00037
.00043
.00050
.00059
.00069
.00080
.00094
.0011
.0013
.0016
.0019
.0023
.0028
.0034
.0042
.0053

Insert Material*
f32
&
.00025
.00033
.00044
.00057
.00073
.00093
.0012
.0015
.0019
.0023
.0029
.0036
.0045
.0056
.0070
.0087
.011
.014
.018
.022
.029

.0021
.0026
.0032
.0040
.0048
,0059
.0071
.0087
.011
.013
.016
.020
.024

(oontd)

D4
.0038
.0048
.0062
.0078
.0099
.013
,016
.020
.026
.033
.043
.056
.074

ff a mating pair of connectors uses two types of

insert materials, use the average of the base failure
rates for the two insert material types. See following
page for inserl material determination.

. ~=

.020 ~xp

~-lsgz.o
((0+=)+

2. ~=

.431

3. ~=

.190e~p

exp

4. ~ = .770 exp

To =
To

~0x73)53;

((.+
7)+
(R:y)
T-073.6

((0+4+
(%:7)42)
T-1298.0

~-1528.8
((0+27)+

~0&:73)472)

Internal Contact Operating Temperature (C)

Connector Ambient Temperature + Insert
Temperature Rise

See folbwing page for Insett Temperature Rise

Determination.

MIL-HDBK-217F

15.1

CONNECTORS,

GENERAL

(EXCEPT

PRINTED

Insert Material
Determination

-Possible Insert
Materials
Conf guration
Specification
A
B c
D
Rack and Panel
MIL-C-28748
x
M IL-C-83733
x
MIL-C-24308
x
x
M IL-C-28804
x
x
MIL-C-83513
x
x
Circular
I

MIL-C-5015
MIL-C-26482
MIL-C-28840
MIL-C-38999
MIL-C-8151 1
MI L-C-83723

x
x
x

x
x
x
x
x
x

x
x

x
x

x
x

Power

MI L-C-3767
MIL-C-22992

Coaxial

MI L-C-3607
MIL-C-3643
MIL-C-3650
MI L-C-3655
MIL-C-25516
MIL-C-39012
MI L-C-55235
MIL-C-55339

MIL-C-49142

Triiial
Insert
Material
Type
A
B

Common Insert Materials

Vitreous Glass, Alumina
Ceramic, Polyimide
Diallylphtalate, Melamine,
Fluorosilicione, Silicone
Rubber, Polysulfone,
Epoxy Resin
Polytetrafluorethy lene
(Teflon),
Chbrotrifluorethylene
(Kel-f)
Polyamide (Nylon),
Polychloroprene

x
x
x
x
x
x

Temperature
Ran~e (C)*
-55 to 250

CIRCUIT

BOARD)

Insert Tempe rature Rise (AT I ) Determination

ContacI
12
16
20
1
2
T
1
2
5
8
3
13
4
4
8
13
19
5
;
5
18
27
6
3
8
7
4
10
23
36
46
13
30
8
5
16
57
9
37
6
70
10
7
45
19
41
15
15
96
70
26
20
25
106
39
54
30
72
35
40
92
w
AT

0.989 (i)l 85

22 Gauge Contacts

AT

0.640 (i) 85

20 Gauge Contacts

AT

0.274 (i) 85

16 Gauge Contacts

AT

0.100 (i)l 85

12 Gauge Contacts

AT
i

Insert Temperature Rise

Amperes

per Contact

RF Coaxial Connectors

AT= 5C

RF Coaxial Connectors
(High Power Applications)

AT = 50C

-55 to 200

Mating/Unmating
-55 to 125

-55 to 125

~ne
These temperature ranges indicate maximum
=pability of the insert material only. Connectors
Jsing these materials generally have a reduced
emperature range caused by other considerations of
:onnector design. Applicable connector
specifications contain connector operating
emperature range,

Factor - KK

Mating/Unmating Cycles*
(per 1000 hours)
o to .05
> .05 to .5
>.5t05
>5t050
> 50
One cycle includes both connect

nK
1.0
1.5
2.0
3.0
4.0
and disconnect.

I
MIL-HDBK-217F
I

15.1

CONNECTORS,

GENERAL

(EXCEPT

PRINTED

CIRCUIT

BOARD)

Active Pins Factor - n

Number of
Active
Cent acts

Xp
1.0
1.4
1.6
1.7

;
3
4
5
6

;::

:
9
10
11
12
13
14
15
16
17
18
19
20
25
30
35
40
45
50
55
60

:::
2.4
2.6
2.7
2.9
3.0
3.1
3.3
3.4
3.6
3.7
3.9
4.0
4.8
5.6
6.5
7.4
8.4
9.5
11
12.

Environment Factor - XE

Number of
Active

~E

Contacts
65
70
75
80
85
90
95
100
105
110
115
120

125
130
135
140
145
150
155
160
165
170
175
180
185
190
195
200

0.51064

Number of Active Contacts

13
15
16
18
E
23
25
27
30
32
35
37
40
43
46
50
53
57
61
65
69
74
78
83
89
94
100

Environment

MIL-SPEC

Lower Quality

GB

1.0

2.0

GF

1.0

5.0.

8.0

21

Ns

5.0

10

Nu

13

27

*IC

3.0

12

5.0

18

%c

8.0

17

UF

12

25

RW

19

37

SF

.50

.80

MF

10

20

ML

27

54

CL

490

970

An active contact is the conductive element in a

oonnector which mates with another element for
the purpose of transferring electrical energy. For
ooaxial and triaxial oonneotors, the shield
contact k oounted as an active contact.

15-3

MIL-HDBK-217F

15.2

CONNECTORS,

PRINTED

CIRCUIT

BOARD
DESCRIPTION
One-Piece Connector
Two-Piece Connector

SPECIFICATION
MIL-C-21097
MIL-C-55302
Failures/l
Base Faiture Rate - L
To (C)
o
10
20
30
40
50
60
70
80
90
100

.00012
.00017
.00022
.00028
.00037
.00047
.00059
.00075
.00093
.0012
.0015

To (<)

Ab

110
120
130
140
150
160
170
180
190
200

.0018
.0022
.0028
.0035
.0044
.0055
.0069
.0088
.011
.015

06 t-iours

Connector Ter
Amperes
Per Contact

mrature Ri: ! (AT C) Determination

c tntad Guac
26
22
20
I

1
4
8
13
19

2
8
16
27
41

2
3
4
5

AT = 2.100 (i).85

1
2
5
8
13

26 Guage Contacts

AT = 0.989 (i)l .85

22 Guage Contacts

AT = 0.640 (i)-85

20 Guage Contacts

AT = Contact Temperature Rise

i

To = Internal Contact Operating

Temperature

Amperes per Contact

(C)

Mating/Unmating

Factor - XK

lvlating/Unmating Cycles*
(Perl 000 Hours)
o to .05
> .05 to .5
>.5t05
>5t050
>50

1.0
1.5
2.0
3.0
4.0

A cycle is defined as the mating and unrnating

of a connector.

15-4

MIL-HDBK-217F

15.2

CONNECTORS,

Active Pins Factor - z

Number of
Active
Contacts
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
25
30
35
40
45
50
55
60

1.0
1.4
1.6
1.7
1.9

%
75
80

2.0

:::
2.4
2.6
2.7
2.9

196
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
180
185
190
195
200

H
3.3
3.4
3.6
3.7
:::
4.8
5.6
6.5
7.4
!;
11
12

np =

exp

N-1

()
~

CIRCUIT

BOARD

Environment Factor - ~

Number of
Active
Contacts

*P

PRINTED

~E

13
15
16
18
19
:;
25
27
30
32
35
37
40
43
46
50
53
57
61
65
69
74
78

Environment

MIL-SPEC

Lower C?ualit~

GB

1.0

2.0

GF

3.0

7.0

GM

8.0

17

Ns

5.0

10

Nu
Alc

13

26

6.0
11

*UC

14
22

6.0

14

*UF

11

22

RW

19

37

SF

.50

.80

MF

10

20

ML

27

54

490

970

c,

:;
94
100

c1

0.51064

Number of Active Pins

An active contact is the conductive element

which mates with another element for the
purpose of transferring electrical energy.

15-5

MIL-HDBK-217F

DESCRIPTION
IC Sockets, Plug-in

SPECIFICATION
MIL-S-83734

P = %ZPXE

?b~

Type

r
~E

Environment

.00042

All MIL-S-83734

06 Hours

Environment Factor - XE

Base Failure Rate - ~

I

Failuresll

GB

1.0

GF

3.0
14

GM
Active Pins Factor - np
Number

14
16
18
20
22
24
28
36
40
48
50
64

2.6
3.1
3.4
3.7
4.0
4.3
4.6
5.3
6.7
7.4

IF

12

*UC

11

*UF

13

RW

25

9.5
13

N-1
~

exp

0.51064

Number

()

8.0

Alc

9.1

np

18

Nu

2.0
2.3

6
8
10

6.0

INS
7tp

of Active contacts

.50

SE

MF

14

ML

36

CL

650

of Active Contacts

An active contact is the conductive element

which mates with another element for the
purpose of transferring electrical energy.

15-6

-.

---

---

.-

MIL-HDBK-217F

16.1

INTERCONNECTION

ASSEMBLIES

WITH

PLATED

THROUGH

HOLES

DESCRIPTION
Circuit Boards, Printed (PCBS) and Discrete Wiring

Ap = Lb N1 xc
[

+ N2 (ZC

+ 13)]

~Q~E

Failures/106

Hours

APPLICATION
NOTE:
For assemblies
not using Plated Through Holes (PTH),
use Section 17,
Connections. A discrete wiring assembly with electrokms deposit plated through holes is basically a pattern of
insulated wires laid down on an adhesive coated substrate. The primary cause of failure for both printed wiri~
and discrete wiring assemblies is associated with plated through kle pr6blems (e.g., barrel cracki~).
Base Failure Rate - ~

Qud@ ~actor -

Technology
Printed Wiring Assembly/Printed
Circuit Boards with PTHs

i~bl

Quality

nQ

II

MIL-SPEC or Comparable Institute for

Interconnecting, and Packaging
Electronic Circuits (lPC) Standards

Lower

.000041

Discrete Wiring with Electroless

Deposited PTH (s 2 Levels of Circuitry)

fiQ

II

.00026

Number of PTHs Factor - N, ard N&

Environment Factor - nE

Factor

Quantit~

N,

Quantity of Wave Soldered Functional

PTHs

N2

Quantity of Hand Soldered PTHs

I
Complexity Factor - Zn

Number of Circuit Planes, P

52
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Discrete Wiring w/PTf-i
Xc = .65 P.m

Environment
GB

1.0

GF

2.0

GM

7.0

Ns

5.0

Nu
1.3
1.6
1.8
2.0
2.2
2.4
2.6
2.8
2.9
3.1
3.3
3.4
3.6
3.7
1
2sPs16

7CC

13

AC

5.0

IF

8.0

Uc

16

*UF

28

RW

19

SF

.50

MF

10

ML

27

c,

500

MIL-HDBK-217F

17.1

CONNECTIONS

DESCRIPTION
Connections Used on All Assemblies Except Those
Using Plated Through Holes (PTH)

APPLICATION
NOTE: The failure rate model in this section applies to connections used on all assemblies
except those using plated through holes. Use the Interconnection Assembly Model in Section 16 to account
for connections to a circuit board using plated through hole technology. The failure rate of the structure which
supports the connections and parts, e.g., non-plated-through hole boards and terminal straps, is considered to
be zero. Solderless wrap connections are characterized by solid wire wrapped under tension around a post,
whereas hand soldering with wrapping does not depend on a tension induced connection.
The followiW
model is for a single co~nection.
-~

= ~ZQZE

Failures/l 06 Hours

Environment Factor - ZF

Base FaiJure Rate - L

Connection

Type

Hand Solder, w/o Wrapping

Hand Solder, w/Wrapping
Crimp
Weld
Solderless Wrap
Clip Termination
Reflow Solder

*
.00014
.00026
.00005
.0000035
.00012
.000069

~Q

1,0

Manual

Lower

411Types

1.0

GF

2.0

GM

7.0

N~

4.0

IF

Automated

Standard

GB

*IC

C;mments

Crimp Types

Upper

fiE

Nu

Quaiiiy Factor - XO
Quality Grade

Environment

Daily pull tests

recommended.

11
4.0
6.0

Uc

6.0

UF

8.0

%w

16
.50

sF
1.0

Only MIL-SPEC or
equivalent tools and
terminals, pull test at
beginning and end of each
shift, color coded tools and
terminations.

2.0

MIL-SPEC tools, pull test at

beginning of each shift.

20.0

Anything less than standard

criteria.

MF

9.0

ML

24

CL

420

1.0

~xcept Crimp

17-1

,,

MIL-HDBK-217F

18.1
SPECIFICATION
MIL-M-103O4

METERS,

PANEL

DESCRIPTION
Meter, Electrical Indicating, Panel Type, Ruggedized

= %nAzFnQzE

Failures/l

06 Hours

Base Failure Rate - ~

QuaI@ Factor - ~

Type

Quality

All

.090

nQ

M IL-M-1 0304

1.0

Lower

3.4

Application Factor - ~A
Application

Environment Factor - XF

Direct Current

1.0

Alternating

1.7

Current

Function
Function

Factor - ~F
1

~F

1.0

Ammeter
Voltmeter

1.0
I

Other*

2.8

Meters whose basic meter movement

construction is an ammeter with associated
conversion elements.

Environment

~E

GB

1.0

GF

4.0

%!

25

Ns

12

Nu

35

Alc

28

IF

42

Uc

58

UF

73

RW

60

SF

1,1

MF

60

ML

NIA

CL

N/A

18-1

MIL-HDBK-217F

19.1
SPECIFICATION
MIL-C-3098

06 Hours

Base Failure Rate - ~

Environment

Factor - xc
L

Frequency, f(MHz)

Lk
u

.011

0.5

1.0

.013
.019
.022
.024
.026
.027
.028
.029
.030
.031
.032
.033
.033
.034
.035
.035
.036
.036
.037
.037
.037
.038

5.0
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105

Ab =

CRYSTALS

DESCRIPTION
Crystal Units, Quartz

Lp = AbXQnE Failures/l

QUARTZ

Environment

~E

G~

1.0

GF

3.0

GM

10

NS

6.0

NU

16

Aic

12

iF

17

Uc

22

UF

28

%w

23

SF

.50

MF

13

ML

32

CL

500

.o13(f).23

Quality Factor - xfi

u

Quality

fiQ

MIL-SPEC

1.0

Lower

2.1

______
_____ ___
___

19-1

MIL-HDBK-217F

20.1

LAMPS

DESCRIPTION
Lamps, Incandescent, Aviation Sewice
Lamps, Incandescent, Miniature, Tungsten-Filament

SPECIFICATION
MIL-L-6363
W-L-1 11

kp = ~~u~A~E

Failures/l

06 Hours

NOTE: The data used to develop this model included randomly occurring catastrophic
APPLICATION
failures and failures due to tungsten filament wearout.
Environment Factor - m~

Base FaiUre Rate - ~

.

Rated Voltage, Vr (Votts)

Ab

.59
.75
1.8
2.2
4.5
5.4
7.9

5
6
12
14
24
28
37.5

I
Ab =

.074(vr)

Util@ion

29

Factor- nu

Utilization (Illuminate Hour#

Equipment Operate Hours)

Environment

%E

GB

1.0

GF

2.0

GM

3.0

NS

3.0

Nu

4.0

*IC

4.0

IF

4.0

Uc

5.0

UF

6.0

*RW

5.0

SF

.70

MF

4.0

0.10

ML

6.0

0.10 to 0.90

0.72

cL

> 0.90

1.0

< 0.10

27

Application Factor - ~A
Application
Alternating Current

1.0

Direct Current

3.3

20-1

a..

11

MIL-HDBK-217+

21.1

ELECTRONIC

FILTERS,

NON-TUNABLE

DESCRIPTION
Filters, Radio Frequency Interference
Fitters, High Pass, Low Pass, Band Pass, Band
Suppression, and Dual Functioning (Non-tunable)

SPECIFICATION
MlL-F-l 5733
MIL-F-18327

The most accurate way to estimate the failure rate for electronic fitters is to sum the failure rates tor the individual
compments which make up the filter (e.g., ICs, diodes, resistors, etc.) using the appropriate models provided
in this Handbook. The Parts Stress models or the Parts Count method given in Appendix A can be used to
determine individual component failure rates. If insufficient information is available then the following defautt
model can be used.
Failures/l 06 Hours

~=%~xE

Base Failure Rate - ~

Environment Factor - ZE

Type
MlL-F-l

Ab

5733, Ceramic-Ferrite

.022

Construction (Styles FL 10-16, 22,

24, 30-32, 34, 35, 38, 41-43, 45,
47-50, 61-65, 70, 81-93, 95, 96)
MlL-F-l 5733,
Components,

Discrete LC
(Styles FL 37, 53, 74)

MlL-F-l 8327, Discrete LC

Components (Composltlon

.12

.12

Environment

~E

GB

1.0

GF

2.0

GM

6.0

NS

4.0

NU

9.0

*IC

7.0

IF

9.0

1)

M IL-F-18327, Discrete LC and

Cfystai Components
(Composition 2)

.27

Uc

11

*UF

13

RW

11

SF

.80

MF
Quality Factor - ~

Quality
1

MiL-SPEC

7.0

ML

15

CL

120

1.0

Lower

2.9
I

21-1

l\

----

MIL-HDBK-217F

22.1

FUSES

DESCRIPTION
Fuse, Caftridge Class H
Fuse, CaMdge, High Interrupting Capacity
Fuse, Current Limiter Type, Aircraft
Fuse, Instrument Type
Fuse, Instrument, Power and Telephone
(Nonindicating), Style FO1

SPECIFICATION
W-F-1726
W-F-1814
MIL-F-5372
ML-F-23419
MIL-F-15160

+)

%Eai1ure@106Wrs

APPLICATION
NOTE:
The reliability modeling of fuses presents a unique problem.
Unlike most other
components, there is very little correlation between the number of fuse replacements and actual fuse failures.
Generally when a fuse opens, or blows, - something else in the circuit has created an overload condition and
the fuse is sknply functbning as designed. This model is based on life test data and represents fuse open and
shorting failure modes due primarily to mechanical fatigue and corrosion. A short faiture mode is most cornmonty
caused by electrically conductive material shorting the fuse terminals together causing a failure to open
condition when rated current is exceeded.

Base Failure Rate - &

Environment

Type

W-F-1726, W-F-1814, MIL-F5372, MIL-F-23419,

ML-F-151 60

Environment

.010

%
GF

Factor - TCF

~E
1.0

2.0

8.0

NS

5.0

Nu
AC

11
9.0

IF

12

Uc

15

*UF
*RW

18
16
.90

SF
MF

10

ML

21

CL

230

22-1

MIL-HDBK-217F

I
I
23.1
L

MISCELLANEOUS

PARTS

- Failure Rates for Miscellaneous Parts (Failure@ 106 Hours)

Failure Rate

Vibrators (M IL-V-95)
60-cycle
120-cycle
400-cycle

15
20
40

Lamps
Neon Lamps

0.20

Fiber Optic Cables (Single Fiber Types Only)

0.10

Single Fiber Optic Connectors*

Microwave Elements (Coaxial & Waveguide)

Attenuators (Fixed & Variable)
Fixed Elements (Directional Couplers, Fixed Stubs & Cavities)
Variable Elements (Tuned Stubs & Cavities)

Microwave Ferrite Devices

Isolators & Circulators (S100W)
Isolators & Circulators
Phase

0.1 (Per Fiber Km)

See Resistors,

Type RD

Negligible

0.10
0.10x z~
0.20 x ~E

(>100W)

O.10x?tE

Shifter (Latching)

Dummy Loads
< 1 Oow

0.010 x ~E

1Oow to < 1Ooow

0.030 x n~

> 1000W

0.10 x ZE

Terminations (Thin or Thick Film Loads Used in Stripline and Thin

Film Ckcults)

Caution: Excessive Mating-Demating

0.030 x fiE

Cycles May Seriously Degrade Reliability

23-1

MIL-HDBK-217F
23.1

MISCELLANEOUS

PARTS

Environment Factor - X-

,..

.V.

V..-

-v

W.O,

.V

(Durnmy

-w..-

Environment

~E

Load

Environment

GB

1.0

GB

1.0

GF

2.0

GF

2.0

GM

8.0

GM

NS

5.0

N~

Nu

12

10
5.0
17

*IC

5.0

AC

6.0

IF

8.0

IF

8.0

Uc

7.0

*UC

14

11

UF

22

17

*RW

25

UF
RW

SF
MF

.50
9.0

ML

24

CL

450

.50

SF

I
{

MF

14

ML

36

c,

23-2

660

MIL-tiDBK-217F
APPENDIX

A:

PARTS

COUNT

RELIABILITY

PREDICTtON

Parts Ccxmt Rellablllty Prediction - This prediction method is applicable during bid proposal
and early design phases when insuff-kient information is avaitable to use the part stress analysis models
shown in the rndn body of this Handbook. The information needed to apptythe method is (1) generk pal
ws
(includlng complexity for mkrodrcults) and quantities, (2) part quallty levels, and (3) equipment
environment. The equipment failure rate Is obtained by looking up a generic failure rate in one of the
following tables, muttiptying it by a qualityfactor,and then summing it with failure rates obtained for other
components in the equipment. The general mathematkal expressbn for equipment failure rate with this
method is:

Equation 1

for a given equipment environment where:

EQUIP

Total equipment failure rate (Failure@l 06 Hours)

Generic failure rate for the i h generk part (Failures/106

7LQ

Quality factor for the i h generic part

Ni

Quantityof i h generk part

Number of different generk

Hours)

part categories in the equipment

Equation 1 applies if the entire equipment is being used in one environment.

If the equipment
comprises several units operating in different environments (such as avionics systems with units in
airborne inhabited (Al) and uninhabited (Au) environments), then Equation 1 should be applied to the
portions of the equipment In each environment. These environment-equipment failure rates should be
added to determine total equipment failure rate. Environmental symbols are defined in SeCtion 3.
The quality factors to be used with each part type are shown with the appkabk

tables and are not

necessarily the same values that are used in the Parl Stress Anatysis. Microcircuits have an additional
multiplying factor, ~L, which accounts for the maturfty of the manufacturing process.
For devices in
production two years or more, no rrmdiiition
should be ndtiplied

is needed.

For those kI production less than two years, ~

by the appropriate XL factor (see page A-4).

ft should be noted that no generic failure rates are shown for hybrid mkrocimdts.
Each hybdd is a fakfy
unique devke.
Since none of these devkes have been standardized, their complexity cannot be
determined from their name or function. Identically or similarly named hybrids can have a wide range of
complexity that thwarts categorization for pufposes of this prediction method. tf hybrids are anticipated for
a design, their use and construction should be thoroughly investigated on an individual basis with
application of the predktbn model in Section 5.
The failure rates shown In this Appendix wem calculated by assigning model defautt values to the
failure rate modets of Section !5through 23. The speclfk defaultvaJues used for the model parameters are
shown with the ~ Tabtes for mkrocimults. Default parameters for atiother part cfasses are summarized in
the tables startifi on Page A-12. For parts with characterfstks which differ significantly from the assumed
defaults, or parls used in large quantities, the underlying models in the main body of this Handbook can
be used.

A-1

-=--.-=-a-.

MIL-HDBK-217F
APPENDIX

A:

PARTS

COUNT

-*O*
. .

..mi@j

Wml
cum.
00.

C99$

ml-m

snNc9tn
c9w*a
0000

eetnm
000

:f%m
o-mm
0000

Cuu:
.
.

131

*:I
A-2

-=

-=

==

=.

MIL-HDBK-217F
APPENDIX

A:

PARTS

U3

&i
0
0

o
.

liniimil~l
-_
I

13-LA

UL--l!

~-s

COUNT

MIL-HDBK-217F
APPENDIX

A:

PARTS

COUNT

>I
IIfj
+

ii

II(?3 I

.-

MIL-HDBK-217F
APPENDIX

A:

PARTS

COUNT

.
0

1!
i

!I

A
--

$?
A
--

in

a5

A-5

--

--~+=-=-..--..--

---

MIL-HDBK-217F
APPENDIX

#
9

A-6

A:

PARTS

COUNT

MIL-HDBK-217F
APPENDIX

A:

PARTS

COUNT

A-7

MIL-I+DBK-217F
APPENDIX

A:

PARTS

COUNT

&

10

N
ij

&
8

*,
0,

MIL-HDBK-217F
APPENDIX

A:

PARTS

COUNT

A-9

MIL-HDBK-217F
APPENDIX

A:

PARTS

COUNT

c+
U3

to

m
F2

A-10

MIL-HDBK-217F
APPENDIX

*.

Ui

(9

o.

o.

o.

Fi

A:

PARTS

COUNT

s-

C&

au

.g
8

.g

c%

ai-

C5

A-II

11

la

MIL-HDBK-217F
APPENDIX

A:

PARTS

COUNT

0000
. .
T--

0000000

FV--T-

w.
-

Y-.

.
Y7-

a-

. ..
.

MIL-HDBK-217F
APPENDIX

A:

PARTS

COUNT

A-13

MIL-HDBK-217F
APPENDIX

A:

PARTS

COUNT

A-14

MIL-HDBK-217F
APPENDIX

? 0.00.0.000.00.
---v--

--

qo.
-9FW-.

o.000ooo
.V-WF

A:

PARTS

COUNT

qq

----

A-15

--

I
I

MIL-HDBK-217F
APPENDIX

.0

A:

PARTS

COUNT

C9

a5
0

$+
8
U3

m..

8
.
if

5
*
i
9

A-16

-.

MIL-HDBK-217F
APPENDIX

A:

PARTS

COUNT

A-17

nn

AK

MIL-HDBK-217F
APPENDIX

/4-18

A:

PARTS

COUNT

MIL-HDBK-217F

APPENDIX

VHSJC/VHSIGLIKE

B:

AND

VLSI CMOS

(DETAILED

MODEL)

This appendix contains the detaibd versbn of the VHSICMSI CMOS model contained in Sectbn 5.3.
is provided to albw more detailed device level design trade-offs to be acxmmplkhed for predominate
failure modes and mechanisms exhibited in CMOS devices. Reference 30 should be consulted for a
detailed derivation of this model.
CN~
+ ~t)

+ ~(t)

RATUSWL

Lp(t)

~,(t)

+ ~~(t)

+ ~.~

+ ~~

Ip(t)

Pred.kted Failure Rate as a Function of Time

Aox(t)

Oxide Failure Rate

q-Jt)

Metallization Failure Rate

kc(t)

Hot Carner Failure Rate

~~~(t)

Contamination Failure Rate

k PAC

Package Failure Rate

% SD

EOS/ESD

q~(t)

Miscellaneous Failure Rate

+ ~~(t)

Failure Rate

The equations for each of the above failure mechanism failure rates are as follows:

-7.7 to) (+ox)

A %YPEO)(

Lox (in F/l 06) =

AR

OR )[

(.0788 e

5
.399
exp ~
+ (t+to)a~x
((
=Ox
A

Total Chip Area (in cr#)

TYPEOX

.~

(e -7.7 AToxt
)

In (t + to) - In t500x
)

)1

for Custom and Logic Devices, 1.23 for Memories and Gate Anays

It

MIL-HDBK-217F

APPENDIX

VHSIC-VHSIC-LIKE

B:

AND

VLSI

(DETAILED

CMOS

AR

.21 cm2

Doox

Oxide Defect Density (tf unknown, use

()%

MODEL)

2
where X. = 2 w

and X~ is the feature

size of the device)

DR

1 Def ect/cm2
Effective Screening Time

to

(Actual Time of Test (in 106 hrs.))

Tox

Temperature

(ATOX (at Junction s~eenjm

Acceleration Factor, =

exp

3
- (+
[ 8.6 I7x1O 5

tern.)

(in ~))

- *)]

(where TJ = Tc + 9JCP (in K))

%(-JX

Eox

-192

(~

Maimm

- *)

power

&Jppiy

Votbge VDD, divided by the gate oxide thickness

(in

MV/cm)
1.3x1022
t500x

(QML)
~ox

(QML)

ATOX Vex

(in 106 hrs.)

= 2 if on CNL, .5 if not.

Sgma obtained fmm test data of oxide faibres fmm the same or similar process. If
not avaiiable, use a Oox value of 1.

time (in 106 Hours)

B-2

MIL-HDBK-217F

APPENDIX

B:

VHSIC/VHSIGLIKE

AND

VLSI

CMOS

(DETAILED

MODEL)

F FQw

&

A %YPEMET

OMET

AR

~ 00102

~-1 8 O)(A
,~E~(e-.8TME+

+[(,+;fl=e.P[~(
l.(t+to)-,.t50METfJ

Total Chip Area (in cm

.88 for Custom and Logic Devices, 1.12 for Memory and Gate Arrays

.21 cm2

Xo
OMET

Metal Defect Density (tf unknown use ()

x~

2
where ~

= 2 pm and X~ is the feature size of

the device)

1 Defect/cm*

Temperature

exp

Acceleration Factor

[ 8.6;yj0-5

=
=A

50MET

(~

- A)]

Effective Screening Time

=

(QML)

(Metal

J2 A

=TCASE +,JcP

(inOK)~

(in 106 hrs.)

(at Screening Ternp (in K))

.388

(TJ

Type)

(Actual Scmenhg

Tune (in 106 hrs))

(in 106 hrs.)

TME

(QML) = 2 if on QML, .5 if not.

Metal Type = 1 for Al, 37.5 for AI-CU or for A1-Si-Cu
J
a

WT

The mean absoMe

slgrna otXained from test data on electmnigration

value of Metal Current Density (in 106 Amps/cm2)

process. If this data is not available use cm

t

failures from the same or a similar

= 1.

time (in 106 hrs.)

B-3

MIL-HDBK-217F

APPENDIX

B:

AND VLSI

VHSIGVHSIGUKE

-.5

50HC

(QML)3.74XI
THC

0-5

HC

(DETAILED

MODEL)

In (t + to) - In t50

%c

CMOS

)1

$u Q -2.5

Id

()

(QML) = 2 if on QML, .5 if not

.039
% tic = exp
[ 8.617x10-5

Id

Drain Current at Operating Temperature.

If unknown use id = 3.5 e 0057J

sub

Substrate Current at Operating Temperature.

in K)

If unknown use

Isub = .0058 e -OOWg J (in K) (mA)

sgma derived from test data, if not available use 1.

to

ATW (at wreening

time (in 106 hrs.)

Temp. (in K))

(Test Duration in 106 hours)

ATIC)N F~~TlOf!l
--0028 to AT~N

%hl

.000022 e

-,0-

[+

-4$1
(where TJ = Tc + 8JCP (in K))

exp
[ 8.617x1O

to

e -.0028 ATCON t

Effective Screening Time

ATmn (at screening junotion temperature (in K))

B-4

time (in 106 hrs.)

(actual screening time in 106 hrs.)

(WV

MIL-t-iDBK-217F

APPENDIX

VHSIC/VHSIGLIKE

B:

%AC

(.0024 + l.=

x 10-5 (spins)) ~

fiE

See Section 5.10

7CQ

See Sectbn

AND

~T

VLSI

PH

Package Hermetidty Factor

O for Hermetic Packages

PH

-.5
399
exp
t~~
[(~PH2

TA

10-6 exp

Pt+

ArWent

MODEL)

5.10

npT
1.0
2.2
4.7

DtP
Pin Grid May
Chip Carner (Surface MOUM T=hno~y)

86x

(DETAILED

+ ~~

Package Type

%0

CMOS

In(t) - In(tsop))g for plastc packages

2
- (;
[ 8.617x1O 5

- *)]

2.96
exp ~

[1

Temp. (in K)

(mL230[+
-+1+

(l-DC)(RIi) whereTJ= Tc + eKp OnK)

(for example, for 50% Relative Humidity, use RH = .50)

.74
time (in 106 hrs.)

B-5

MIL-HDBK-217F

APPENDIX

B:

VHSIGVHSIGLIKE

-.0002

%0s

AND

VLSI

CMOS

(DETAILED

MODEL)

VTH

- OOo:;&-

VTH = ESD Threshold of the device using a 100 pF, 1500 ohm discharge model

MIS

(.01 e

TMIS
=

2.2 ~) ~ATMl~ ) (e -2.2 ATMIS t,

= Temperature Acceleration Factor

exp

-.423
[ 8.6317x10-5

(+

- A)]

where TJ = Tc + eJcP (in K)

to =
=
t=

Effective Screening Time

ATMl~ (at Screening Terrp

(in K))

Actual Screening Time (in 106 hours)

time (in 106 hrs.)

B-6

-an

AC

MIL-HDBK-217F

APPENDIX

Publications tisted with AD nunbers

National Technical hlfOtiiOfl
5285 Port Royal Road

C:

BIBLIOGRAPHY

may be obtained trom:

Service

~@eM,
VA 22151
(703) 487-4650
U.S. Defense Contractors may obtain copies from:
Defense Technical Information Center
Cameron Station - FDA, Bldg. 5
Alexandria, VA 22304-6145
(703) 274-7633
Documents with AD number prefix with the letter B or with the suffix L: These documents are in a
Limfted Distributbn category. Contact the Defense Technical Information Center for_
procedures.
Copies of MIL-STDSS, MIL-HDBKs, and specifications are available from:
Standardization Document Order Desk
700 Robins Ave.
Buikfing 4, Section D
Philadelphia, PA 19111-5094
(215) 697-2667
The year of publiition of the Rome Laboratory (RL) (formerly Rome Air Development Center (RADC))
documents is part of the RADC (or FL) nunber, e.g., RADGTR-66-97
was published in 1968.
1.

Laser Reliability Prediction, RADC-TR-75-21

2.

ReliabiMy Model for Miniature Blower Motors Per MIL-B-23071 B, RADC-TR-75-178,

3.

High Power Microwave Tube Reliability Study, FAA-RD-76-I

4.

Electric Motor Reliabii~

5.

Development

Model, RADC-TR-77406,

AD A013735.

72, AD AO033612.

AD A0501 79.

of Nonelectronic Part Cyclic Failure Rates,RADC-TR-77417,

This study devebped

6.

O, AD A016437.

AD A050678.

new faiture rate models for relays, switches, and connectors.

Passive Device Failure Rate Models for MIL-HDBK-217B,

RADC-TR-~432,

AD A050180.

This study developed new failure rate models for resistors, capacitors and inductive devices.
7.

Quantification of Printed Circuit Boatd Connector ReWMtty,

8.

Crimp Connection Reliability, RADC-TR-78-15,

9.

LS1/Micmprocessor

10.

A Re@nda~

11,

Revision of Environmental Faofors for MIL-HDBK-217B,

Reliabilii

RADC-TR-77-433,

AD A050505.

Prediction Model Development,

Notebook, RADC-TR-77-287,

AD A049980.

RADC-TR-79-97,

AD A06891 1.

AD A050837.
RADC-TR-80-299,

AD A091837.

L-1

MIL-HDBK-217F

APPENDIX

C:

BIBLIOGRAPHY

12.

Traveling

Wave Tube Failure Rates,- RADC-TR-80-288,

13.

Reliability Predict&n Modeling of blew Devices, - RADC-TR~237,

This study devebped
mernortes.

AD A096055.
AD A090029.

failure rate nmdek for magnetic bubble memories and charge~upkf

14.

Failure Rates for Fiber Optic Assemblies, RADC-TR-80-322,

15.

Printed Wiring Assembly and Interconnection

AD A092315.

ReliabMfy, RADC-TR-81 -318, AD Al 11214.

This study dwebped faihn fate modets for printed wtrfng asae~s,
solderless wrap
assanbfies, wrapped and soldered assemblies and discrete wirfng assemblies with
ebctroless depostted plated through holes.
16.

Avionio Etimentat

F_

for MIL-HOBK-21 7, RADC-TR-81 -374, AD B084430L.

17.

RADC Thermal Guide for Reliability Engineers, RADC-TR-82-1

18.

Reliability Modeling of Critical Electronic Devices, RADC-TR-83-1

72, AD Al 18839.
08, AD Al 35705.

This report devebped failure rate prediction procedures for magnetrons, vidicions, cathode
ray tubes, semiconductor lasers, helium-cadtim
lasers, heiiim-neon lasers, Nd: YAG lasers,
electronic filters, sofid state relays, time delay relays (electronic hybrid), circuit breakers, I.C.
Sockets, thumbwheel switches, electromagnetic meters, fuses, crystals, incandescent lamps,
neon gbw lamps and surface acoustic wave devices.
19.
This study developed failure rate models for nonoperating periods.
20.

RADC Nonelectronic Reliability Notebook, RADC-TR-85-194,

AD A163900.

This report contains failure rate data on rnechanicaf and electromechanical parts.
21.

Reliabilii

Prediction for Spacecraft, RADC-TR-85-229,

AD A149551.

TMs study kwestigated the reliability performance h@ories of 300 Satellite vehicles and is the
basis for the halving of all model %E factors forMIL-HDBK-217E
to MIL-HDKB-21 7E, Notice 1.
22.

Surface Mount Technology: A Reliability Review; 1986, Available from Reliabilii

PO BOX 4700, Rome, NY 13440-8200,
800-526-4802.

23.

Thermal Resktames
AD B1084I7.

24.

Large Scale Memory Emr

of Joint Army Navy (JAN) Certified Microcimuif Pa&ages,

Detection and Correction? RADC-TR-87-92,

Anatysis Center,

RADC-TR46-97,

AD B1 17785L.

study developed
models
to cakwlate memory system reliiility for memories
incorporating error detecting and correcting codes. For a summary of the study see 1989
IEEE ReliabiMy and Maintainability SymposUm Proceedings, page 197, Accounting for Soft
Errors in Memory Reliability Prediiion.a

This

25.

c-2

Reliability Analysis of a Surface Mounted Package Using Finite Element Simulation, RADC-TR-87177, AD A189488.

MIL-HDBK-217F

APPENDIX

26.

VHSIC Impact on System Reliability, RADC-TR-86-13,

27.

Reliability Assessment of Surface Mount Technology, RADC-TR-68-72,

28.

Reliability Prediction Models for Discrete Semiconductor

C:

BIBLIOGRAPHY

AD B122629.
AD A193759.

Devices, - RADC-TR-88-97,

AD A200529.

This study developed new failure rate prediction modets for GaAs Power FETS, Transient
Suppressor Diodes, Infrared LEDs, Diode Array Displays and Current Regulator D-.
29.

Inqxmt of Fiber Optics on System Reliability and Maintainabilii,

30.

VHSWVHSIC

RADC-TR-88-124,

Like Rel&bi14y Prediotlon Modeling, RADGTR-69-I

AD A2CH946.

71, AD A214601.

This study provides the basis for the VHSIC model appearing in MIL-HDBK-21 7F, Section 5.
31.

Reliability Assessment Using Finite Element Techniies,m

RADC-TR-89-281,

AD A21 6907.

This study addresses surface mounted solder interconnections and miorowire boards platedthru-hole (PTH) connections. The report gives a detailed account of the factors to be
considered when performing an FEA and the procedure used to transfer the results to a
reliability figure-of-merit.
32.

Reliability Analysis/Assessment

of Advanced Technologies,

This study provides the basis for the revisedmicmchwit

Memories) appearing in MIL-HDBK-217F,
Sectii
5.

RADC-TR-90-72,

ADA 223647,

models (except VHSIC and Bubble

33.

Improved Reliability Prediction Model for Field-Access Magnetic Bubble Devices, AFWAL-TR-811052,

34.

Reliability/Desgn

35.

NASA Parts Application Handbook, MIL-HDBK-976-B

(NASA).
This handmok is a five vohnne series which dfscusses a full range of eiectrfcal, electronic and
electromechanical component parts. It provides extensive detailed technical informatbn for
each component part such as: definitions, oonstructbn details, operating characteristics,
derating, failure mechanisms, screening techniques, standard parts, environmental
considerations, and circuit appliition.

36.

Nonelectronic Parts Reliability Data 1991 , NPRD-91.

TM report contains field ?aiture rate data on a variety of ektrical, mechanical,
electromechanical and microwave parts and assernblii (1 400 different part types). It is
available from the Re@bMty AnaJysis Center, PO Box 4700, Rome, NY 13440-6200, Phone:
(315) 337-0900.

Thermal Applications, MIL-HDBK-251.

Custodians:
Amy-CR
Navy - EC
Air Fome -17

Preparing Activity:
Air Force -17
Project No. RELI-0064

c-3

---- . .. .

MIL-HDBK-217F

APPENDIX

C:

BIBLIOGRAPHY

Review AcWtWs:
Army - Ml, AV, ER
Navy - Sl+, AS, OS
~rForce -11, 13, 14, 15, 18,
19,99
User Activities:
Army - AT, ME, GL
Navy - CG, MC, YD, TD
Alr Force -85

c-4

ImE:Thistcumm
aynott
Jeusod*=7wt*d

Qmult cmamsnd mnuactd

Camnoms sdlmbdanmsbfmtinat

doaunsm,
norbrupostwdvus, ddatkm, udwikatkmofspedk=bn~sm
Oons$mw
orhplyuthofizdcm mwdvearly
podtJnd
thodsr9ncdcka8na
w8)wb

nquhm9nts.

(Fo#dahg

lt?ishe)

(FM abng this line)

DEPARTMENT
OF THE AIR ~E
RUERSS
GrWfissAFB, NY 13441-5700

NO
111111
n
MAIL

POSTAGE

OFFKXAL BUSINESS
FOR PRtVATE USE S300
t331ALTY

NECESSARY
IF MAILED
IN THE
UNITED STATES

l~S

FRSTCtASS

=LY
W-

tm. -

w~m

Rome laboratory
AlTN: RIJERSS
Griffiss AFB, NY 13441-5700

...

..

D.c.
Am~=

STANDARDIZATION

DOCUMENT
IMPFtOVEhtENT
(set?hstructbn - I?eveme Ski@

PROPOSAL

1.
ability PnWidon
.

of Electronic E@pment
m
m)

1
D

c1

Parag~

MAMJFAcnmE.R

Nuntxw and Wording:

Wording

ReaaodRaIionab

6.

\or

R~rnrnerKMon

REMARKS

a
b

Ss (s-a

my,St-, ZP

DD .% 1426

PREVIOUS EDfTION IS OBSUETE