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  • Tutorial Sheet1 (Advanced Solid State Devices, UEC-801) : Department of Electronics and Communication Engineering

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    The document contains a tutorial sheet from the Department of Electronics and Communication Engineering for the course Advanced Solid State Devices. It includes 3 questions - the first asks to derive the equations for semiconductor current from drift and diffusion, the second asks to calculate the voltage drop across a 1mm silicon bar doped with donors and given the current density, and the third asks to calculate the electron concentration and conductivity of intrinsic silicon doped with acceptors to a given hole concentration.

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    Tut Sheet 1 UEC801

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    The document contains a tutorial sheet from the Department of Electronics and Communication Engineering for the course Advanced Solid State Devices. It includes 3 questions - the first asks to derive the equations for semiconductor current from drift and diffusion, the second asks to calculate the voltage drop across a 1mm silicon bar doped with donors and given the current density, and the third asks to calculate the electron concentration and conductivity of intrinsic silicon doped with acceptors to a given hole concentration.

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    © All Rights Reserved
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    4 views1 page

    Tutorial Sheet1 (Advanced Solid State Devices, UEC-801) : Department of Electronics and Communication Engineering

    Uploaded by

    NeerajBoora
    The document contains a tutorial sheet from the Department of Electronics and Communication Engineering for the course Advanced Solid State Devices. It includes 3 questions - the first asks to derive the equations for semiconductor current from drift and diffusion, the second asks to calculate the voltage drop across a 1mm silicon bar doped with donors and given the current density, and the third asks to calculate the electron concentration and conductivity of intrinsic silicon doped with acceptors to a given hole concentration.

    Copyright:

    © All Rights Reserved
    Download as DOC, PDF, TXT or read online from Scribd
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    Department of Electronics and Communication Engineering

    Tutorial Sheet1 (Advanced Solid State Devices, UEC-801)

    Q1: Derive the basic equations of semiconductor current Drift and Diffusion.
    Q2. The 1mm long bar of silicon at 300K is doped with donor impurity to extent of
    5x1020/cm3. Find the voltage drop across the bar if the current density in the bar is
    1mA/cm2.
    Q3. The sample of intrinsic silicon at 300K is doped to acceptor impurity such that hole
    concentration becomes 2x1020/cm3. Calculate the concentration of electron in
    extrinsic semiconductor and also calculate the conductivity.
    Department of Electronics and Communication Engineering
    Tutorial Sheet1 (Advanced Solid State Devices, UEC-801)

    Q1: Derive the basic equations of semiconductor current Drift and Diffusion.
    Q2. The 1mm long bar of silicon at 300K is doped with donor impurity to extent of
    5x1020/cm3. Find the voltage drop across the bar if the current density in the bar is
    1mA/cm2.
    Q3. The sample of intrinsic silicon at 300K is doped to acceptor impurity such that hole
    concentration becomes 2x1020/cm3. Calculate the concentration of electron in
    extrinsic semiconductor and also calculate the conductivity.
    Department of Electronics and Communication Engineering
    Tutorial Sheet1 (Advanced Solid State Devices, UEC-801)

    Q1: Derive the basic equations of semiconductor current Drift and Diffusion.
    Q2. The 1mm long bar of silicon at 300K is doped with donor impurity to extent of
    5x1020/cm3. Find the voltage drop across the bar if the current density in the bar is
    1mA/cm2.
    Q3. The sample of intrinsic silicon at 300K is doped to acceptor impurity such that hole
    concentration becomes 2x1020/cm3. Calculate the concentration of electron in
    extrinsic semiconductor and also calculate the conductivity.

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