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EE462L, Spring 2014

DCDC Boost Converter

Buck converter

+ vL
iL

iin

Vin

Boost converter
Vin

Iout

iin

+ vL
iL

iC

+
Vout

Iout

L
C

iC

+
Vout

Boost converter
iin
Vin

+ vL
iL

iD

Iout

L
C

iC

+
Vout

This is a much more unforgiving circuit than the buck converter


If the MOSFET gate driver sticks in the on position, then there
is a short circuit through the MOSFET blow MOSFET!
If the load is disconnected during operation, so that Iout = 0, then
L continues to push power to the right and very quickly charges
C up to a high value (250V) blow diode and MOSFET!
Before applying power, make sure that your D is at the
minimum, and that a load is solidly connected
3

Boost converter
iin
Vin

+ vL
iL

iD

Iout

L
C

iC

+
Vout

Modify your MOSFET firing circuit for Boost Converter


operation (see the MOSFET Firing Circuit document)
Limit your output voltage to 120V

Boost converter
iin

+ vL
iL

iD

Iout

Vin

iC

+
Vout

Using KVL and KCL in the average sense, the average


values are
Iin
Vin

+0V

Iout

L
C

Iout
+
Vout
0A

Find the input/output equation by examining the voltage


across the inductor
5

Switch closed for DT seconds


iin
Vin

+ Vin
iL

Iout

L
C

diL Vin

dt
L

Iout

+
Vout

Reverse biased, thus the


diode is open

for DT
seconds

Note if the switch stays closed, the input is short circuited!


6

Switch open for (1 D)T seconds


+ (Vin Vout )
iL
iin
Vin

Iout

L
C

diL Vin Vout

dt
L

+
Vout
(iL Iout)

Diode closed. Assume


continuous conduction.

for (1D)T seconds

!
Since the average voltage across L is zero

VLavg D Vin 1 D Vin Vout 0


Vout (1 D) Vin D Vin D Vin
The input/output equation becomes

Vin
Vout
1 D

A realistic upper limit on boost is 5 times

Examine the inductor current


Switch closed,

diL Vin
vL Vin ,

dt
L

Switch open,

diL Vin Vout


vL Vin Vout ,

dt
L
Vin Vout
A / sec
L

iL
Imax
Iavg = Iin

Vin
A / sec
L

Imin
DT

Iavg = Iin is half way between


Imax and Imin
I

(1 D)T
T
9

Inductor current rating


2
2
I Lrms
I avg

1 2
1
2
I pp I in

I 2
12
12

Max impact of I on the rms current occurs at the boundary of


continuous/discontinuous conduction, where I =2Iin
2Iin

iL

Iavg = Iin
0

2
2
I Lrms
I in

I Lrms

1
2I in 2 4 Iin2
12
3

2
I in
3

Use max

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MOSFET and diode currents and current ratings


iin

+ vL
iL

iD

Iout

Vin

iC

+
Vout

2Iin
0
2Iin
0
Use max
Take worst case D for each

I rms

2
I in
3

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Capacitor current and current rating


iin

iL

iD

Iout

Vin

iC

+
Vout

iC = (iD Iout)
2Iin Iout
0
Iout
Max rms current occurs at the boundary of continuous/discontinuous
conduction, where I =2Iout
Use max

I Crms I out

See the lab document for the derivation


12

Worst-case load ripple voltage


iC = (iD Iout)

0
Iout
The worst case is where C provides Iout for most of the period. Then,

Q I out T I out
V

C
C
Cf

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Voltage ratings

iin

Iout
C sees Vout

+
Vout

Vin

iin
Vin

iL

Diode sees Vout

iL

Iout

L
C

+
Vout

MOSFET sees Vout


Diode and MOSFET, use 2Vout
Capacitor, use 1.5Vout

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Continuous current in L
Vin Vout
A / sec
L

iL

2Iin
Iavg = Iin
0

(1 D)T

Vin
V

1 D

V
in
in
Vout Vin
1

2 I in
1 D T 1 D
1 D T
Lboundary
Lboundary
Lboundary f
2 I in

Vin D
Lboundary f

V D
Lboundary in
2 I in f

Then, considering the worst case (i.e., D 1),

V
L in
2 I in f

use max

guarantees continuous conduction


use min

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Impedance matching
I out 1 D I in

Iin

+
Source

DCDC Boost
Converter

Vin

Vout

Vin
1 D

V
Rload out
I out

Iin
+
Vin

Equivalent from
source perspective

Requiv

Vin 1 D Vout
2 Vout

Requiv

1 D
1 D 2 Rload
I out
I in
I out
1 D

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Example of drawing maximum power from


solar panel

Pmax is approx. 130W


(occurs at 29V, 4.5A)

Isc

For max power from


panels, attach

Rload

Voc
I-V characteristic of 6.44 resistor

29V
6.44
4.5 A

But as the sun conditions


change, the max power
resistance must also
change
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Connect a 100 resistor directly, extract only 14W

130W

So, the boost converter


reflects a high load
resistance to a low
resistance on the
source side

4 or
4
.
6 sist
re

14W
100 resistor

To extract maximum power (130W), connect a boost converter between the


panel and the load resistor, and use D to modify the equivalent load
resistance seen by the source so that maximum power is transferred

Requiv 1 D Rload , D 1
2

Requiv

6.44
1
0.75
Rload
100

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BOOST DESIGN

9A

10A

250V

5.66A

Our components
200V, 250V
16A, 20A

120V
5A
120V
Likely worst-case boost situation

10A

L. 100H, 9A
C. 1500F, 250V, 5.66A p-p
Diode. 200V, 16A
MOSFET. 250V, 20A
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BOOST DESIGN

5A
0.067V
1500F 50kHz

L. 100H, 9A
C. 1500F, 250V, 5.66A p-p
Diode. 200V, 16A
MOSFET. 250V, 20A
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BOOST DESIGN

40V
200H
2A

50kHz

L. 100H, 9A
C. 1500F, 250V, 5.66A p-p
Diode. 200V, 16A
MOSFET. 250V, 20A
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