Field Effect Transistor (FET)

BJTs (bipolar junction transistors) were covered in previous chapters. Now we will
discuss the second major type of transistor, the FET (field-effect transistor). Recall
that a BJT is a current-controlled device; that is, the base current controls the
amount of collector current. A FET is different. It is a voltage-controlled device,
where the voltage between two of the terminal (gate and source) controls the
current through the device. The FETs major advantage over the BJT is high input
resistance. Overall the purpose of the FET is the same as the BJT.
The JFET
The junction field effect transistor, like a BJT, controls current flow. The
difference is the way this is accomplished. The JFET uses voltage to control the
current flow. As you will recall the transistor uses current flow through the baseemitter junction to control current. JFETs can be used as an amplifier just like the
BJT.

Figure (a) shows the basic structure of an n-channel JFET (junction field-effect
transistor). Wire leads are connected to each end of n-channel; the drain is at the
upper end, and the source is at the lower end. Two p-type regions are diffused in
the n-channel, and both p-type regions are connected to the gate lead.

Figure shows dc bias voltages applied to an channel device. V DD provides a drain-tosource voltage and supplies current from drain to source. The current is controlled
by a field that is developed by the reverse biased gate-source junction (gate is
connected to both sides). With more VGG (reverse bias) the field (in white) grows
larger. This field or resistance limits the amount of current flow through RD.
The junction field effect transistor, like a BJT, controls current flow. The
difference is the way this is accomplished. The JFET uses voltage to control the
current flow. As you will recall the transistor uses current flow through the baseemitter junction to control current. JFETs can be used as an amplifier just like the
BJT.