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Unisonic Technologies Co., LTD: 2 Amps, 600 Volts N-Channel Mosfet
Unisonic Technologies Co., LTD: 2 Amps, 600 Volts N-Channel Mosfet
, LTD
2N60 Power MOSFET
DESCRIPTION 1
TO-252
The UTC 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at 1 TO-220
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
1
TO-220F
* RDS(ON) = 3.8Ω@VGS = 10V.
* Ultra Low gate charge (typical 9.0nC) *Pb-free plating product number: 2N60L
* Low reverse transfer capacitance (Crss = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
2N60-TA3-T 2N60L-TA3-T TO-220 G D S Tube
2N60-TF3-T 2N60L-TF3-T TO-220F G D S Tube
2N60-TM3-T 2N60L-TM3-T TO-251 G D S Tube
2N60-TN3-R 2N60L-TN3-R TO-252 G D S Tape Reel
2N60-TN3-T 2N60L-TN3-T TO-252 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
2N60L-TA3-T
(1)Packing Type (1) T: Tube, R: Tape Reel
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Copyright © 2005 Unisonic Technologies Co., Ltd QW-R502-053,E
2N60 Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Switching Characteristics
Turn-On Delay Time tD (ON) 10 30 ns
Rise Time tR VDD =300V, ID =2.4A, RG=25Ω 25 60 ns
Turn-Off Delay Time tD(OFF) (Note 1,2) 20 50 ns
Fall Time tF 25 60 ns
Total Gate Charge QG 9.0 11 nC
VDS=480V, VGS=10V, ID=2.4A
Gate-Source Charge QGS 1.6 nC
(Note 1, 2)
Gate-Drain Charge QGD 4.3 nC
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V
Continuous Drain-Source Current ISD 2.0 A
Pulsed Drain-Source Current ISM 8.0 A
Reverse Recovery Time tRR VGS = 0 V, ISD = 2.4A, 180 ns
Reverse Recovery Charge QRR di/dt = 100 A/µs (Note1) 0.72 µC
Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature
D.U.T. +
VDS
-
+
- L
RG
Driver VDD
* dv/dt controlled by RG
Same Type * I SD controlled by pulse period
VGS * D.U.T.-Device Under Test
as D.U.T.
VGS Period P. W.
D=
(Driver) P.W. Period
VGS= 10V
IRM
RL
VDS
VDS 90%
VGS VDD
RG
10%
VGS
10V D.U.T. t D(ON ) tD (OFF)
Pulse Width ≤ 1μs tR tF
Duty Factor ≤0.1%
Same Type
50kΩ as D.U.T.
QG
12V 10V
0.2μF 0.3μF
VDS
QGS QGD
VGS
DUT
VG
3mA
Charge
L
VDS
BVDSS
RD
VDD
10V D.U.T.
tp IAS
tp Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
On-Resistance Variation vs. Drain Current and Body Diode Forward Voltage Variationvs.
Gate Voltage Source Current and Temperature
12
VGS=0V
Drain-Source On-Resistance, R DS(ON) (Ω)
TJ=25℃
250μs Pulse Test
VGS=10V
Reverse Drain Current, IDR (A)
10
VGS=20V
8
6 100
125℃
4 25℃
0 10-1
0 1 2 3 4 5 6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Capacitance vs. Drain-Source Voltage Gate Charge vs. Gate Charge Voltage
500 12
Ciss=CGS+CGD
(CDS=shorted) VDS=120V
Coss=CDS+CGD 10 VDS=300V
Gate-Source Voltage, VGS (V)
400
Crss=CGD VDS=480V
Capacitance (pF)
Ciss
8
300
Coss
6
200
4
Crss
100
VGS=0V 2
f = 1MHz ID=2.4A
0 -1
0
0 1
10 10 10 0 2 4 6 8 1
0
Drain-Source Voltage, VDS (V) Total Gate Charge, QG (nC)
GS
ID=250μA ID=4.05A
Drain-Source On-Resistance,
2.5
1.1
VDSS (Normalized)
R DS(ON) (Normalized)
2.0
1.0 1.5
1.0
0.9
0.5
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Junction Temperature, TJ (℃) Junction Temperature, T J (℃)
Max. Safe Operating Area Max. Drain Current vs. Case Temperature
2.0
Operation in This Area
is Limited by RDS(on)
10 1
Drain Current, ID (A)
1ms
100 10m 1.0
Ds
C
10 -1 0.5
TC=25℃
TJ=125℃
Single Pulse
10 -2 0.0
100 101 102 103 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, TC (℃)
Thermal Response
Thermal Response, θJC (t)
D=0.5
100
θJC (t) = 2.78℃/W Max.
0.2
Duty Factor, D=t1/t2
0.1 TJM -TC=PDM×θJC (t)
0.05
-1 0.02
10 PDM
0.01
Single pulse t1
t2
0 1
10-5 10-4 10-3 10-2 10-1 10 10
Square Wave Pulse Duration, t1 (s)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.