Dioda Zener

Dioda yang digunakan pada daerah breakdown

Simbol Dioda Zener
A K

Elektronika 1 (Minggu 6)

Karakteristik Bias Terbalik Dioda Zener
ID

Dioda Zener dan Transistor

Bipolar -VZ
VD
IZK

1 2

Dioda Zener Dioda Schottky

Rangkaian Ekuivalen Dioda Zener
Dioda yang terbuat dari aluminium-silikon yang memiliki karakteristik
serupa dengan dioda pn junction dengan perbedaa utama :
A

Cut in Dioda Schottky lebih rendah daripada dioda pn junction
RZ
A K
Reverse Current Dioda Schottky lebih besar daripada dioda pn junction

VZ
K
ID

Dioda Zener pada Rangkaian Regulator sederhana

Rs Rs
VD
Vs RL Vs VZ RL Vo=Vz
= Dioda Schottky
= Dioda pn
3 4

Bipolar Junction Transistor Bipolar Junction Transistor

Sumber Arus Tak Bebas Ideal
Representasi Ebers-Moll dari BJT

Transistor PNP

AR L
v 2 = − Ai1 R L = − vs
Rs
I E = I ED − α R I CD I C = I CD − α R I ED
v EB v CB v CB v EB

I E = I ES ( e η VT
− 1) − α R I CS ( e η VT
− 1) I C = I CS ( e η VT − 1) − α F I ES ( e η VT − 1)

5 6

1
 Bipolar Junction Transistor Bipolar Junction Transistor

Representasi Ebers-Moll dari BJT
Pada BJT berlaku :

Transistor NPN
Reciprocity condition

α F I E = α R I CD

KCL pada Basis adalah :

I B = −( I E + I C )

Penguatan Arus:

Common based forward short circuit current gain

IC
α F = h FB = −
IE VCB = 0

Common based reverse short circuit current gain

I E = − I ED + α R I CD I C = − I CD + α F I ED IE
αR = −
v EB v CB −
v CB
−
v EB IC V EB = 0
− − η VT ηVT
I E = − I ES ( e η VT
− 1) + α R I CS ( e η VT
− 1) I C = − I CS ( e − 1) + α F I ES ( e − 1)

7 8

Bipolar Junction Transistor Bipolar Junction Transistor

Penguatan arus :
Penguatan arus :

Transistor NPN

Transistor NPN
Kondisi VEB = 0 (short circuit) ; VCB < 0 (forward)
vCB

Kondisi VCB = 0 (short circuit) ; VEB < 0 (forward) −


ηVT


v
− EB I E = − I ES (e0 − 1) + α R I CS (e − 1)
ηVT
I E = − I ES (e − 1) + α R I CS (e 0 − 1) v EB
−
ηVT
−
v EB I E = α R I CS (e − 1)......................................(1)
ηVT vCB
I E = − I ES (e − 1)......................................(1) −
ηVT
v EB

I C = −I CS (e −1) + α F I ES (e0 −1)
−
ηVT

I C = −I CS (e0 −1) + α F I ES (e −1) −
vCB
ηVT
v EB
I C = −I CS (e −1)..................................(2)
−
ηVT
I C = α F I ES (e − 1)..................................(2)
(1)  (2)

karena I B = − ( I E + I C ) maka :
karena I B = − ( I E + I C ) maka : IE α R I B = I E (1 − α R )

(1)  (2) αR = −
I α F I B = I C (1 − α F ) IC αR


αF = − C V EB = 0
IE = IB
IE V CB = 0
αF (1 − α R )
IC = IB
(1 − α F ) IE = βRIB
IC = β F I B 9 10

Bipolar Junction Transistor Bipolar Junction Transistor

Penguatan arus :
Penguatan arus :

Transistor PNP
Transistor PNP

Kondisi VCB = 0 (short circuit) ; VEB > 0 (forward)
Kondisi VEB = 0 (short circuit) ; VCB > 0 (forward)
vCB


v EB

I E = I ES (e ηVT
− 1) − α R I CS (e 0 − 1) I E = I ES (e 0 − 1) − α R I CS (eηVT − 1)
vCB
v EB

I E = I ES (eηVT − 1)......................................(1) I E = −α R I CS (eηVT − 1)......................................(1)

vEB v
− CB
ηVT


I C = I CS (e0 −1) − α F I ES (e ηVT
−1)
I C = I CS (e − 1) − α F I ES (e0 −1)
v EB vCB
−
ηVT ηVT
I C = −α F I ES (e − 1)..................................(2) I C = I CS (e − 1)..................................(2)

(1)  (2) karena I B = − ( I E + I C ) maka :
(1)  (2) karena I B = − ( I E + I C ) maka :

IC α F I B = I C (1 − α F )
IE α R I B = I E (1 − α R )
αF = − αR = −
IE αF IC V EB = 0 αR
V CB = 0 IC = IB IE = IB
(1 − α F ) (1 − α R )
IC = β F I B IE = βRIB
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2
 Bipolar Junction Transistor Bipolar Junction Transistor

Jenis Pembiasan pada Transistor :
Transistor NPN

Kondisi

IE=0 (Emitor dalam kondisi open circuit)
Kondisi Pembiasan
Jenis

Emitor - Basis Kolektor Basis I B = − ( I E + I C ) maka :

Forward-Active Forward Reverse I B = − IC

Cutoff Reverse Reverse
VCB=Reverse Biased

v CB
−
Saturation Forward Forward I CS e η VT
= 0 maka : I CD = − I CS .......... (1)


Reverse-Active Reverse Forward −
v EB
η VT
I E = I ES ( e − 1) − ( −α R I CS )
I E = I ED + α R I CS

Arus Kolektor pada npn

Karena :

I C = − I CD + α F I ED .........( 3 )

IE=0, maka :

(1)(2)(3)


0 = I ED + α R I CS
ICO=IC (pada Emitor open circuit)

I ED = −α R I CS ........( 2 ) I CO = I C = I CS (1 − α Rα F )
13 14

Bipolar Junction Transistor Bipolar Junction Transistor

Transistor PNP
Common Base (PNP)

Kondisi v EB v CB

IE=0 (Emitor dalam kondisi open circuit) I E = I ES ( e ηVT − 1) − α R I CS ( e ηVT − 1)

vCB vCB


I B = − ( I E + I C ) maka : I ES (eηVT
−1) = I E + α R ICS (e ηVT
−1)..............................(1)
vCB v EB
I B = − IC
I C = I CS (eηVT − 1) − α F I ES (eηVT − 1)..........................(2)

VCB=Reverse Biased
 
v CB

(1)(2) vCB vCB

I CS e η VT = 0 maka : I CD = − I CS .......... (1) I C = I CS (eηVT − 1) − α F  I E + α R I CS (eηVT − 1) 

 
 
v EB

I E = I ES ( e η VT
− 1) − ( −α R I CS )  vCB
I C = I CS (1 − α F α R ) eηVT − 1 − α F I E
I E = I ED + α R I CS  
  IC

Karena :

Arus di Kolektor pnp
Karena : I CO = I CS (1 − α R α F ) maka :

I C = − I CD + α F I ED .........( 3 )

IE=0, maka :
(1)(2)(3)  vCB
 VBC
I C = I CO  e − 1 − α F I E


ηVT
 


0 = I ED + α R I CS
ICO=IC (pada Emitor open circuit)
 
I ED = −α R I CS ........( 2 ) I CO = I C = I CS (1 − α Rα F )
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Bipolar Junction Transistor Bipolar Junction Transistor

Common Base (NPN)
Karakteristik Output Common Base :
−
v EB
−
v CB IC
η VT ηVT
I E = − I ES ( e − 1) + α R I CS ( e − 1) IE=25 mA
v v
− CB − CB
ηVT ηVT
I ES (e −1) = −I E + α R ICS (e −1)..............................(1)
vCB v EB
− − IE=15 mA
ηVT ηVT
I C = − I CS (e − 1) + α F I ES (e − 1)..........................(2)

(1)(2) −  vCB v
− CB  IE=5 mA
− 1) + α F  − I E + α R I CS (e ηVT − 1) 


ηVT
I C = − I CS (e
  VBC atau VCB
  Karakteristik Input Common Based :
 − vCB


I C = − I CS (1 − α F α R ) e ηVT − 1 − α F I E
  IE
  IC

Karena : I CO = I CS (1 − α R α F ) maka : VCB=0

Kolektor Open
 v
− CB  VCB
I C = − I CO  e ηVT
− 1 − α F I E
 
 
VEB atau VBE
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