2N5108

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION:
The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz.

PACKAGE STYLE TO-39 FEATURES:

GPE = 6.0 dB Typ. at 1.0 GHz FT = 1,500 MHz Typ. at 15 V/ 50 mA Hermetic TO-39 Package

MAXIMUM RATINGS
IC VCB VCE PDISS TJ TSTG JC 400 mA 55 V 30 V 3.5 W @ TC = 25 C -65 to +200 C -65 to +200 C 50 C/W
O O O O

1 = Emitter 2 = Base 3 = Collector

CHARACTERISTICS
SYMBOL
BVCER BVEBO ICES ICEO ft COB GPE C IE = 100 A VCE = 50 V VCE = 15 V VCE = 15 V VCE = 15 V VCB = 30 V VCC = 28 V IC = 5.0 mA

TA = 25 C

NONE

TEST CONDITIONS
RBE = 10

MINIMUM
55 3.0

TYPICAL

MAXIMUM

UNITS
V V

1.0 TC = +150 C
O

A mA A MHz

10.0 20

IC = 50 mA

f = 200 MHz f = 1.0 MHz

1200 3.0 5.0 35

pF dB %

POUT = 1.0 W

f = 200 MHz

A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
Specifications are subject to change without notice.

REV. A

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