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Bai Tap Chuong FET - 25.7.09
Bai Tap Chuong FET - 25.7.09
nh thin bng dng c nh 1. Cho mch in nh hnh v. Bit VDD = 16V ; VGG = 2V ; RG = 1M; RD = 2k;
I DSS = 10mA; VGS 0 = 8V ; Hy xc nh: a) VGSQ ; I DQ ; VDS b) V D ; VG ; VS Hnh v bi 1
V DD RD
C2
V0
Li gii:
a) VGSQ = VGG = 2V
V 2V I DQ = I DSS 1 GS = 10mA1 = 5,625mA V 8V GS 0 V DS = VDD I D RD = 16V (5,625 mA)(2k ) = 4,75V
2 2
Vi
C1
RG
V GG
xc
nh:
C2
V0
Vi
C1
(1)
RG
RS
(2) Hnh v bi 4
R vi I D : S V GS 0
2 2 RS 1 ID + V GS 0 I DSS
nghim:
I D1 = 13,9 mA > I DSS = 8 mA (v l loi) 0 < I D 2 = 2,6 mA < I DSS = 8 mA (tho mn)
Vy I D = I D = 2,6 mA
Q Q2
b) VS = I D RS = 2.6 V
VD = VDS + VS = 11,42 V
VG = 0 V
hoc
V DD
VD = VDD I D RD = 11,42V
5. Cho
mch
in
nh
hnh
v.
Bit
Vi C1
VDD = 12V ; RD = 1,5k; RS = 680; I DSS = 12mA; VGS 0 = 6V ; Hy xc nh: a) VGSQ ; I DQ ; VDS b) V D ; VG ; VS
RD
C2
V0
RS
Hnh v bi 5
V DD
7. Cho
mch
in
nh
hnh
v.
Bit
RS
nh thin t cp (nh thin bng mch phn p) 8. Cho mch in nh hnh v. Bit
Hnh v bi 7
Hy xc nh: a) VGS ; I D ;
Q Q
b) V D ; VS ; V DS ; VDG
Li gii:
VG = R2VDD = 1,82V R1 + R2
(1)
2
V DD RD R1
C2 T1
10uF
V0
VGS = VG I D RS
Vi
C1
5uF
(2)
R2
RS
CS = 20uF
R i vi I D : S V GS 0
2 2 RS ID + VGS 0
V 1 G V GS 0
VG 1 I I D + 1 V DSS GS 0
bc 2 ny ta thu c 2 nghim:
VD = VDD I D RD = 10,24V
a) VGS ; I D ;
Q Q
RS V SS
b) VS ; VDS ; D-MOSFET
Hnh v bi 9
VGSQ ; I DQ ; VDS .
Gi : Cch gii ging nh i vi bi 8 (mch nh thin t cp cho JFET). Ch : VGS 0 < VGS < VGS max ; vi VGS max > 0
Q
V DD RD R1 RD
V DD
C2
V0
C2
V0
Vi
C1
Vi
C1
RG R2 RS CS RS
Hnh v bi 10
Hnh v bi 11
VGSQ ; I DQ ; VD .
12. Cho
mch
in
nh
hnh
v.
Bit
V DD RD
V DD RD
C2
V0
R1
RD
C2
V0
Vi
C1
RG
Vi C1
R2
RS
CS
Hnh v bi 12 E-MOSFET
Hnh v bi 13
Hnh v bi 14
mch
in
nh
hnh
v.
Bit
VDD = 12V ; RD = 2k ; RG = 10 M ;
k=
(V
I D (on )
GS (on )
VGS (Th ) )
Thay (1) vo (2) ta c: I D = k (VDD I D RD VGS (Th ) )2 . Khai trin thnh phng trnh bc 2 i vi I D :
2 2 R D I D 2 R D (V DD VGS (Th ) ) + 1 2 I D + (V DD VGS (Th ) ) = 0 . k
VGS = VDD I D RD
(1) (2)
14. Cho
mch
in
nh
hnh
v.
Bit
R1 = 22M; R2 = 18M ;
VDD = 40V ; RD = 3k; RS = 820; I D (on ) = 3 mA; VGS (on ) = 10 V ; VGS (Th ) = 5V ; Hy
xc
V DD
RV Gi : VG = 2 DD = 18V ; R1 + R2 k=
RD
C2
V0
(V
I D (on )
GS ( on )
VGS (Th ) )
RG
VGS = VG I D RS
C1
RS
(2)
Thay (1) vo (2) v gii phng trnh bc 2 i vi I D . p s: I D 6,7 mA ; VGS = 12,5V ; VDS = 14,4V .
Q Q
Hnh v bi 15
15. Cho
mch
in
nh
hnh
v.
Bit
a) VGS ; I D ; VDS .
Q Q Q
b) VD ; VS .
Cc mch kt hp gia BJT v FET 16. Cho mch in nh hnh v. Bit VDD = 16V ; RE = 1,6k ; R = 1M; R1 = 82k;
R2 = 24k; I DSS = 12 mA; VGS 0 = 6V ; ( BJT ) = 180 . Hy tnh VD ; VC .
V DD RD RB R1 R VC R2 VD
V CC RC R1 R3
V CC RC VC
RB
VD
VG R2
VD
RE
RS
RS
Hnh v bi 16
Hnh v bi 17
Hnh v bi 18
Li gii: Do RE = 180.1,6k = 288k > 10R2 = 240k nn ta c th s dng cng thc phn p tnh
R2VDD = 3,62V (R 1 + R2 ) Vi VBE = 0,7 V ta c: VE = VB VBE = 2,92V V V 2,92V I E = RE = E = = 1,825 mA vi I C I E = 1,825 mA . R E R E 1,6k Ngoi ra I D = I S = I C , VD = VDD I D RD = 11,07 V
xp x in p VB nh sau: VB =
ID I DSS ID I DSS
17. Cho mch in nh hnh v. Bit VCC = 16V ; RS = 2,4k ; RB = 470k; RC = 3,6k; 18. Cho mch in nh hnh v. Bit VCC = 20V ; RS = 1,2k ; R B = 330k; RC = 1,1k;
R1 = 91k; R2 = 18k; I DSS = 6mA; VGS 0 = 6V ; ( BJT ) = 160 . Hy tnh:
a) VG ; VGS ; I D .
Q Q
b) I E ; I B ;VD ;VC
Bi tp thit k 19. Cho mch in nh hnh v. Bit VDD = 20V ; I D = 2,5 mA;
Q
ID I DSS ID I DSS
( )
( 1V ) = 0,4k . 2,5mA
V DD RD VD
RG RD R1 VD RD
V DD
C2
V0
RS
R2
Vi
RS
C1
Hnh v bi 19
Hnh v bi 20
Hnh v bi 21
21. Cho mch in nh hnh v. Bit I D (on ) = 4 mA; VGS (on ) = 6 V ; VGS (Th ) = 3V ; RG = 10 M ; v V DS = V DD ; I D = I D (on ) . Hy xc nh: VDD ; RD . Pht hin v x l li 22. Cho mch in nh hnh v. Bit VDD = 12V ; RD = 2k; RS = 1k; RG = 1M . Hy phn on v hot ng ca mch trong 2 trng hp a) VS = 4V ; b) VS = 0V ;
V DD V DD RD
1 2
C2
V0
RD R1
Vi
C1
VS RG RS
VG R2
Vs
RS
Hnh v bi 22
Hnh v bi 23
23. Cho
mch
in
nh
hnh
v.
Bit
xem nguyn nhn no c th gy ra trng thi khng mong mun ca mch. FET knh P 24. Cho mch in nh hnh v. Bit I DSS = 8mA; VGS 0 = 4V ; R1 = 68k; R2 = 20k ;
VDD = 20V ; R D = 2,7k; RS = 1,8k; Hy xc nh VGSQ ; I DQ ; VDSQ .
V DD
V DD RD
V DD
R1
RD
ID
ID
RD
VG
RG
R2 RS IS
ID
RG
RS
Hnh v bi 24
Hnh v bi 25
Hnh v bi 26
Li gii:
VG =
VG VGS + I D RS = 0 VGS = VG + I D RS
(2)
. Khai trin thnh phng trnh bc 2
2
2
R 2 2R i vi I D : S I D S V GS 0 VGS 0
26. Cho
mch
in
nh
hnh
v.
Bit
VDD = 16V ; RD = 2k ; RG = 1M ;
nh thin bng dng c nh (JFET) 27. Cho mch in nh hnh v (a). Bit VDD = 16V ; VGG = 2V ; RG = 1M; RD = 2k;
I DSS = 10mA; VGS 0 = 8V ; g d = 40 S . a) Hy xc nh: VGSQ ; I DQ ; VDS
V DD RD
C2
+
V0
Ii
I0
Vi
C1
+ G D
gmV gs ID RD V0 Z0
RG
Vi
Zi
RG
rd
V GG
Hnh v (a) bi 27
Hnh v (b) bi 27
Li gii:
a) VGSQ = VGG = 2V
I DQ V 2V = I DSS 1 GS = 10mA1 = 5,625mA V 8V GS 0 = VDD I D RD = 16V (5,625 mA)(2k ) = 4,75V
2 2
V DS b) M hnh tng ng xoay chiu ca mch nh hnh (b). 2I 2(10mA) g m 0 = DSS = = 2,5 mS VGS 0 8V
VGSQ = 2,5mS 1 ( 2V ) = 1,88 mS g m = g m 0 1 ( 8V ) V GS 0 rd = 1 / g d = 1 / 40 S = 25k
Tr khng vo Z i = RG = 1M . Tr khng ra Z 0 = RD // rd = 2k // 25k = 1,85k . H s khuch i in p K U = g m (RD // rd ) = 3,48 T nh thin(JFET) 28. Cho mch in nh hnh v (a). Bit V DD = 20V ; RG = 1M; R D = 3,3k; RS = 1k;
I DSS = 8mA; VGS 0 = 6V ; g d = 20 S . a) Hy xc nh: VGSQ ; I DQ ; VDS b) Hy v s tng ng xoay chiu ca mch v xc nh g m ; rd . Xc nh tr
khng vo ( Z i ), tr khng ra ( Z 0 ), h s khuch i in p K U trong 2 trng hp (b1) khi c t C S v (b2) khi khng c t C S .
V DD
+
RD
Ii
I0
+ G D
gmV gs
C2
V0 Vi Zi
Vi
C1
rd
RD
ID V0
RG RS
Z0
RG
RS
CS
I0+ID
S
I0
Hnh v (a) bi 28
Hnh v (b) bi 28
b) (b1) khi c t C S th s tng ng xoay chiu ca mch ging nh hnh v (b) bi 27 v cch xc nh cc tham s cng ging nh cch tnh phn b) bi 27. Kt qu: g m 0 =
2 I DSS 2(8mA) = = 2,67 mS VGS 0 6V
Tr khng vo Z i = RG = 1M . Tr khng ra Z 0 = RD // rd = 3,3k // 50k 3,3k . H s khuch i in p K U = g m (R D // rd ) (b2) khi khng c t C S : s tng ng xoay chiu ca mch ging nh hnh v (b) bi 28. Cc tham s g m 0 ; g m ; rd ; Z i c gi tr ging nh phn (b1). V Z 0 =
V0 I R Vi = 0V = D D (1) nn ta c gng tm cch biu din I 0 theo I D . I0 I0
I 0 = g mV gs + I rd I D
v Vrd = V0 V Rs ; V Rs = V gs
I R 1 I D hay I 0 = g m + V gs D D I D vi V0 = I D RD rd rd rd I R 1 M ta c: V gs = (I D + I 0 )R S nn I 0 = g m + (I D + I 0 )RS D D I D rd rd
R R I D 1 + g m RS + S + D rd rd Suy ra: I 0 = R 1 + g m RS + S rd
(2)
V0 = Vi
g m RD R + RS 1 + g m RS + D rd
nh thin t cp(JFET) 29. Cho mch in nh hnh v (a) di y. Bit I DSS = 12mA; VGS 0 = 3V ; rd = 100k;
VDD = 16V ; RD = 2k; RS = 610k; R1 = 82M; R2 = 11M;
a) Hy xc nh: VGS ; I D ;
Q Q
V DD RD R1
+ C2
V0 Zi Vi
+ G
R2 R1 gmV gs
T1
10uF
Vi
C1
5uF R2 RS
rd
RD
V0 Z0
CS = 20uF
Hnh v (a) bi 29
Hnh v (b) bi 29
Gi : a) Cch gii ging bi 8. b) S tng ng xoay chiu ca mch ging nh hnh v (b) bi 28.
g m0 = 2 I DSS VGS 0
VGSQ g m = g m 0 1 V GS 0
rd = 1 / g d
Tr khng vo Z i = R1 // R2 . Tr khng ra Z 0 = RD // rd .
V gs = Vi ;
V0 = g mV gs (R D // rd )
H s khuch i in p K U =
V0 = g m (RD // rd ) . Vi
30. Gii bi 29 cho trng hp khng c t C S . Cu hnh JFET cc ca chung 31. Cho mch in nh hnh v (a). Bit VDD = 12V ; RD = 3,6k; RS = 1,1k; g d = 50S ;
I DSS = 10mA; VGS 0 = 4V ; C1 = C 2 = 10F ; in p vo c dng hnh sin vi bin
V DD RD
C2
V0
rd
+ S
Zi RS Zi
'
D
gmV GS Z0 G
'
C1 Vi
RS
Vi
RD
Z0
V0
Hnh v (a) bi 31
Hnh v (b) bi 31
a) Hy xc nh: VGS ; I D ; .
Q Q
b) Hy v s tng ng xoay chiu ca mch v xc nh g m ; rd . Xc nh tr khng vo ( Z i ), tr khng ra ( Z 0 ), h s khuch i in p K U ca mch. Gi : a) p s: I D = 7,6 mA; VGS = 0,35V ;
Q Q
b) S tng ng xoay chiu ca mch ging nh hnh v (b). Cch gii ging bi 29.
V DD
R1
RD
C2
V0
+ G
Zi
R2 R1 gmV gs
+ D
Vi
C1
R2
Vi
rd
RD
V0
RS
CS
Z0
Hnh v (a) bi 32
Hnh v (b) bi 32
a) Hy xc nh: VGS ; I D ; VD .
Q Q
C2
V0
R1
RD
C2
V0
Vi
C1
Vi
C1
RG
RS
CS
R2
RS
CS
Hnh v bi 33 E-MOSFET
Hnh v bi 35
Cu hnh hi tip cc mng ca EMOSFET 34. Cho mch in nh hnh v (a). Bit VDD = 12V ; RD = 2k ; RG = 10M ; g d = 20S ;
I D (on ) = 6 mA; VGS (on ) = 8V ; VGS (Th ) = 3V ; C1 = C 2 = 1F ;
b) Hy v s tng ng xoay chiu ca mch v xc nh g m . Xc nh tr khng vo ( Z i ), tr khng ra ( Z 0 ), h s khuch i in p K U ca mch. Gi : a) Cch gii ging bi 13.
b) S tng ng xoay chiu ca mch ging nh hnh v (b).
V DD RD
RF Vi
C2
V0
+
Zi
Ii
+
V0 Z0
RG
Ii gmV gs
Vi
rd
RD
C1
S
Hnh v (a) bi 34
Hnh v (b) bi 34
rd = 40k;
mch v xc nh g m . Xc nh tr khng vo ( Z i ), tr khng ra ( Z 0 ), h s khuch i in p KU ca mch. Gi : S tng ng xoay chiu ca mch ging nh hnh v (b) bi 29. Cc thng s c tnh nh phn b) bi 29.
THIT K MCH KHUCH I DNG FET
36. Thit
V DD
thin bng dng c nh nh hnh v. Bit = 30V ; RG = 10M; g d = 20 S ; I DSS = 10mA; VGS 0 = 4V ; h s khuch i in p
mch
nh
xoay chiu K U = 10 .
a) Hy xc nh: g m ; rd ; RD ;VDSQ b) Xc nh tr khng vo ( Z i ), tr khng ra ( Z 0 ) ca mch.
V DD V DD RD RD
C2
V0
C2
V0
Vi
C1
Vi
C1
RG RG
RS
CS
Hnh v bi 36
Hnh v bi 37