Arvind Ajoy

#237, Krishna Hostel, Indian Institute of Technology Madras, Chennai 600036 email: arvindajoy@iitm.ac.in arvindajoy@gmail.com Education Indian Institute of Technology Madras Doctor of Philosophy Chennai, India July 2006, Present Specialization : Nano-electronics Course CGPA : 10.00 / 10.00 Direct admission to the PhD programme, based on undergraduate performance. Indian Institute of Technology Madras Bachelor of Technology Chennai, India August 2002, May 2006 Major : Electrical Engineering, specializing in Semiconductor Devices Minor : Physics CGPA : 9.30 / 10.00 National Public School Schooling Bangalore, India Class 12 : 94.8%, Class 10 : 96.4% Declared the Best Outgoing Student of the academic year 2001-2002. Among the top 0.1% nationwide in Mathematics and Physics in Class 12, and in Mathematics, Sanskrit and Social Science in Class 10. Scholastic Achievements Selected to attend the Visiting Students Research Programme (VSRP) 2005, at the Tata Insitute of Fundamental Research (TIFR), Mumbai, India. Awarded the Kishore Vaigyanik Protsahan Yojana (National Science Fellowship for Students) fellowship during 2001-2002, by the Department of Science and Technology, Govt. of India. Current Research Experience Nano-electronic Device Fabrication and Simulation

Indian Institute of Technology Madras

PhD July 2006, Present

Area : Simulation and Fabrication of Silicon Nanowire Devices Advisor : Prof. Shreepad Karmalkar, Dept. of Electrical Engineering Working on aspects of fabrication, characterization, simulation and modelling of Silicon Nanowires (SiNWs) and SiNW based devices. Currently developing a 3-D simulation tool to study quantum transport in SiNW based devices, using the Non-Equilibrium Greens Function (NEGF) technique within an eective mass approximation. Indian Institute of Technology Madras B.Tech Project November 2005, May 2006 Title : Simulation of Two Dimensional Tunneling in Schottky Barriers Advisor : Prof. Shreepad Karmalkar, Dept. of Electrical Engineering Developed a 2-D simulation procedure to calculate Direct and Trap Assisted Tunneling currents through Schottky barriers, taking into account the exact barrier prole. Implemented this procedure for Trap Assisted Tunneling (TT) in an AlGaN/GaN HEMT and showed that the reverse gate current increases linearly beyond saturation, with a slope that is close to that obtained from measured data; hence showed that the proposed simulation procedure can be used to resolve the uncertainty in reverse gate-leakage mechanism in AlGaN/GaN HEMTs. Tata Institute of Fundamental Research VSRP Fellow Mumbai India May 2005, July 2005 Title : Spectroscopic Ellipsometry Advisor : Dr. Sandip Ghosh, Solid State Electronics Group Setup a Spectroscopic Ellipsometry experiment using a Photoelastic Modulator and measured the complex refractive indices of GaAs and InP as a function of wavelength. Measured and identied features in the spectrum associated with the E0 , E1 and E1 +E1 electronic interband transitions in these semiconductors.