Tutorial Diode

Problems
D2
D1
Q1. Considering ideal diodes, calculate

the current through RL = 1 k.
+3 V
+5 V
1 k
Solution:
Both diodes are ON :
2.2 k
IL
RL
5 =i 1 1k + ( i 1 + i 2 ) 1k
3 =i 2 2.2k + ( i 1 + i 2 ) 1k
2.407 mA
i1 =
i 2 = 0.185 mA
2.2 k
+3 V
+5 V
i1
2.59 mA.
iL =
Q2. Calculate the current through the resistor

RL = 1 k when the switch is OFF and ON,
respectively (cut-in voltage = 0.7 V).
IL
1 k
D1
Power supply
(15 V DC)
D2
Solutions:
OFF condition:
12 0.7
I L = 11.3 mA.
1k
i2
Battery back up
(12 V DC)
ON condition:
15 0.7
=
I L = 14.3 mA.
1k
Department of Electronics & Electrical Communication Engineering, I.I.T. Kharagpur
RL
1
mkmandal@ece.iitkgp.ernet.in
vL
Half-Wave Rectifier
IR
Q3. In the circuit, V1 = 0.6 V and V2 = 0.3

V. Calculate the IR.
10 V
Solution:
=
I R V=
R R
330
ID
D1 ID
D2
10 0.3
330
= 30 mA
Q4. A sinusoidal source vi = 12sin100t V is

used in the half-wave rectifier circuit with RL = 1
k. The diode has a cut-in voltage of 0.7 V.
Calculate the PRV and the power rating of the
diode.
+ vD
vi
id
RL vL
Answer: PRV = 12 V.
Power rating = Imax x Vdmax = 7.91 mW.
2
Problems
Q5. Design a bridge rectifier to drive a load resistance RL = 8 . The transformer
secondary generates 30 V, 50 Hz sinusoidal signal and has an internal resistance of
12 . Diode power rating is 0.5 W, and cut-in voltage is 0.7 V.
Solutions:
=
v s=
30
2 42.43 V .
peak
42.43 0.7
= 2.086 A
8 + 12
Required Pd peak =
0.7 2.086 =
1.46 W.
id=
peak
D1
D3
vL
D1
vL
RL
D4
D2
Bridge rectifier circuit.
The diode with

smallest V will
be damaged
first.
3
Problem
Q6. Calculate the peak-to-peak ripple voltages for a half-wave and a full-wave
rectifiers with a capacitor filter. (RL = 1 k, C = 470 F, vi = 12 V, 50 Hz)
Solutions:
T = 1/50 = 20 mS
Discharging time constant = RLC = 470 mS.
T1 = 0 approximation is valid.
Half-wave rectifier:
vr
p p
= Vm / ( f RL C )
= 12 2 ( 50 1k 470 )
V ( 0.707 V using exp. function)
= 0.722
=
Full-wave rectifier:
vr
p p
= Vm / ( 2 f RL C )
= 12 2 ( 50 1k 470 )
Becomes a complex problem

for RL = 1 k, C = 47 F.
Solve for T2 first:
= 0.361
=
V ( 0.357 V using exp. function)
4
Problem
Q7. As shown in the figure, a half-wave
rectifier dc power supply is to provide 10 V
(dc) to a 1 k load. Calculate the
capacitance required so that the peak-topeak ripple voltage does not exceed 10%
of the average output voltage. Source
frequency is 50 Hz. What should be the
amplitude of the input voltage?
+ vD Line
voltage
+
C
RL vL
Half-wave rectifier with filter.
Solutions:
1
= 20 mS
f
T2 T =
20 mS
T=
vr
p p
Triangular wave approximation: vr (rms ) = vr | p p 2 3

Vm
=
10% of 10 V 9 V - 11V
vL (V)
Vm =
11 V
C =Vm / f RL vr
10 V
p p
=110 F .
T1
T2
t (mS)
5
Voltage Regulator
Q8. In the following circuit, Vi can vary between
9 and 12 V, and RL between 1 k and infinity. A
Zener diode with Vz = 6 V and PD = 400 mW is
used to design the voltage regulator. Choose a
suitable value of Rs to avoid diode burn out.
Rs
+
IL
I
Vi
IZ
Vz
RL VL
Solutions:
The diode must be fired:
Vi |min
9
RL |min
Vz
RL |min + Rs |max
1k
6
1k + Rs |max
Rs |max 0.5 k
Maximum allowed Zener current:
66.67 mA
I=
P=
z allowed
D / Vz
Rs |min
Vi |max Vz
I z allowed
Rs |min
12 6
Rs |min 90 .
66.67 m
The range of Rs is 90 <Rs <500 .

6
Problems
500
Q9. Draw the Thevenins equivalent circuit

(VZ = 6 V, RZ = 0).
15 V
IZ
Vz
1 k
Solutions:
For firing the diode:
15 RL || 1k
6
RL || 1k + 500
RL || 1k 333.33
RL 500 .
333.3
10 V
The diode is not fired:

15 1k
VTh = 10 V ,
1k + 500
=
RTh 1k ||=
500 333.3 .
Eqv. Circuit for

RL<500 .
6V
Eqv. Circuit for

RL>500 .
7
Problems
Q11. Sketch the current through the resistor RL = 1 k. Both of the diodes have a
cut-in voltage of 0.7 V and the break down voltages for diode 1 and 2 are 6V and 9
V, respectively. Also sketch the voltage transfer characteristics.
VTh as seen by the parallel diodes (between A-A):
15 V
1k
RL
Vi
.
VTh V i=
V=
=
i
1k + RL
1k + 1k 2
0V
So, the V i that puts the diode D 1 in F.B.,

VTh 0.7 V i 1.4 V,
Input voltage.
1 k
+
vin
D1
The corresponding Vo =0.7 V =

2k 0.35 mA .
I L 0.7 =
For V i 1.4 V, V=
V i 2k .
o V i 2 I=
L
A
D2
+
RL
v0
-
The circuit.
So, the V i that puts the diode D 2 in F.B.,

VTh 0.7 V i 1.4 V,
The corresponding Vo = 0.7 V
IL =
0.7 2k = 0.35 mA .
For V i 1.4 V, =
Vo V i 2
=
I L V i 2k .
8
Problems
1 k
+
vin
D1
D1 in F.B.
A
D2
+
RL
v0
0.7 mA
-0.7 mA
Equivalent circuit for Vi >1.4 V.

1 k
+
vin
D1
D2 in F.B.
A
D2
+
RL
Current sketch.
v0
-
Vo (V)
0.7
Equivalent circuit for -1.4<Vi <1.4 V.

1 k
+
vin
D1
-1.4
1.4
A
D2
+
RL
v0
-
Equivalent circuit for V <-1.4 V.
Vi (V)
-0.7
Voltage transfer characteristics of

the circuit.
i
Department of Electronics & Electrical
Communication Engineering, I.I.T. Kharagpur
9
Problems
Q12. Considering a high value for RL, Draw the voltage transfer characteristics for
the following circuits. All of the diodes have a cut-in voltage of 0.7 V. In Fig.2, the
break down voltages for diode 1 and 2 are 9 V and 6 V, respectively.
1 k
1 k
+
vi
-
RL
5v
v0
vin
Fig. 7(a). Cut-in voltage = 0.7 V.
D1
RL
D2
v0
-
Fig. 7(b). Cut-in voltages = 0.7 V,

Vz1 = 9 V and Vz2 = 6 V .
Vo (V)
Vo (V)
5.7
Considering RL
6.7
Vi (V)
1
1
Transfer characteristics of Fig. 7(a).
Vi (V)
-9.7
Transfer characteristics of Fig. 7(b).
10
Problems
Q13. Repeat the same considering RL= 1 k.
1 k A
+
vi
-
+
1 k v0
5v
Fig. 8(a). Cut-in voltage = 0.7 V.

1 k A
+
+
1 k v0
vi
-
VTh as seen by the diode and the DC voltage

source (between A-A):
1k
RL
Vi
=
VTh V i=
V=
.
i
1k + RL
1k + 1k 2
So, the corresponding V i that puts the diode in F.B.,

V i 2 5.7 V i 11.4 V.
For V i 11.4 V:
Vo = VTh Vo = V i 2.
For V i 11.4 V:
Vo =+
5 0.7 =
5.7 V.
Vo (V)
Equivalent circuit when Vi<11.4 V.
5.7
1 k A
+
vi
-
+
1 k v0
5.7 v
A
Equivalent circuit when Vi>11.4 V.
11.4
Vo = V i 2.
Vi (V)
Transfer function of Fig. 8(a).
11
Problems
Solution for the second circuit:
1 k
+
VTh as seen by the diodes (between A-A):

A
D1
vin
1k
Vi
+ =
.
VTh V=
i
1k + 1k 2
1 k v0
D2
Fig. 8(b).
So, the corresponding V i that simultaneously puts

D1 in F.B. and D2 in break down is calculated as
VTh 0.7 + 6 V i 13.4 V.
For V i 13.4 V, Vo =
6.7 V.
For V i 13.4 V, Vo =
V i 2.
Vo (V)
6.7
-19.4
13.4
1
2
Vi (V)
-9.7
Transfer characteristics of the above

circuit.
Similarly, the V i that simultaneously puts D2 in F.B.

and D1 in break down is calculated as
VTh 0.7 9 V i 19.4 V.
For V i 19.4 V, Vo =V i 2.
For V i 19.4 V, Vo = 9.7 V.
12
Biased Clamping Circuits

Q14. Draw the output voltage waveforms for the circuit of Fig. 1 and 2. The
corresponding input voltages are shown in the figures.
C = 4.7 F IL
12 V
0V
+
vin
5V
RL = 10 k v0
-
2 mS
-12 V
Input voltage.
Fig. 1. Positive shunt clamper.

C = 4.7 F IL
+
+
vin
-
-5 V
RL = 10 k v0
-
Fig. 2. Negative shunt clamper.

13

Answer1:
28.3 V
12 V
0V
C = 4.7 F IL
2 mS
+
vin
5V
-12 V
Input voltage.
RL = 10 k v0
-
Positive shunt clamper.
4.3 V
2 mS
Output voltage.
Charging time const. = 0, discharging time const. = 47 mS<< time period = 2 mS.
- 16.3 V +
- 16.3 V +
+
-12 V
0.7 V
5V
v0 = 4.3 V
-
Equivalent circuit when the

diode is in reverse bias.
12 V
0.7 V
5V
v0 = 28.3 V
-

diode is in forward bias.
14

Answer2:
2 mS
12 V
0V
C = 4.7 F IL
2 mS
+
vin
-5 V
-12 V
-4.3 V
RL = 10 k v0
-28.3 V
Input voltage.
Output voltage.
Negative shunt clamper.
+ 16.3 V -
+ 16.3 V -
+
12 V
0.7 V
-5 V
v0 = -4.3 V
-

diode is in forward bias.
-12 V
-5 V
v0 = -28.3 V
-

diode is in reverse bias.
15

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Problems

Q1. Considering ideal diodes, calculate

Q2. Calculate the current through the resistor

Department of Electronics & Electrical Communication Engineering, I.I.T. Kharagpur

Q3. In the circuit, V1 = 0.6 V and V2 = 0.3

Q4. A sinusoidal source vi = 12sin100t V is

Bridge rectifier circuit.

Department of Electronics & Electrical Communication Engineering, I.I.T. Kharagpur

The diode with

Becomes a complex problem

Half-wave rectifier with filter.

Triangular wave approximation: vr (rms ) = vr | p p 2 3

Department of Electronics & Electrical Communication Engineering, I.I.T. Kharagpur

Maximum allowed Zener current:

The range of Rs is 90 <Rs <500 .

Q9. Draw the Thevenins equivalent circuit

The diode is not fired:

Eqv. Circuit for

Department of Electronics & Electrical Communication Engineering, I.I.T. Kharagpur

Eqv. Circuit for

So, the V i that puts the diode D 1 in F.B.,

The corresponding Vo =0.7 V =

So, the V i that puts the diode D 2 in F.B.,

Department of Electronics & Electrical Communication Engineering, I.I.T. Kharagpur

Equivalent circuit for Vi >1.4 V.

Equivalent circuit for -1.4<Vi <1.4 V.

Equivalent circuit for V <-1.4 V.

Voltage transfer characteristics of

Fig. 7(a). Cut-in voltage = 0.7 V.

Fig. 7(b). Cut-in voltages = 0.7 V,

Transfer characteristics of Fig. 7(a).

Transfer characteristics of Fig. 7(b).

Department of Electronics & Electrical Communication Engineering, I.I.T. Kharagpur

Fig. 8(a). Cut-in voltage = 0.7 V.

VTh as seen by the diode and the DC voltage

So, the corresponding V i that puts the diode in F.B.,

Equivalent circuit when Vi<11.4 V.

Equivalent circuit when Vi>11.4 V.

Transfer function of Fig. 8(a).

VTh as seen by the diodes (between A-A):

So, the corresponding V i that simultaneously puts

Transfer characteristics of the above

Similarly, the V i that simultaneously puts D2 in F.B.

Department of Electronics & Electrical Communication Engineering, I.I.T. Kharagpur

Biased Clamping Circuits

Fig. 1. Positive shunt clamper.

Fig. 2. Negative shunt clamper.

Biased Clamping Circuits

Positive shunt clamper.

Equivalent circuit when the

Equivalent circuit when the

Department of Electronics & Electrical Communication Engineering, I.I.T. Kharagpur

Biased Clamping Circuits

Negative shunt clamper.

Equivalent circuit when the

Equivalent circuit when the

Department of Electronics & Electrical Communication Engineering, I.I.T. Kharagpur

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