TYN612

TM

HPM

SCRs

HAOPIN MICROELECTRONICS CO.,LTD.

Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose
switching and phase control applications. These devices are intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Simplified outline

Symbol

Applications:

k
g

Pin

Motor control
Industrial and domestic lighting

12

Heating

TO-220

Static switching

Description

Cathode

Anode

Blocking voltage to 600 V

Gate

On-state RMS current to 12A

Features

Ultra low gate trigger current

SYMBOL
V DRM

IT

RMS

I TSM

SYMBOL
Rth( j-c)

Rth( j-a)

PARAMETER

Value

Unit

600

12

140

Repetitive peak off-state voltages

RMS on-state current
Non-repetitive surge peak on-state current

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

Junction to case(DC)

1.3

/W

Junction to ambient

60

/W

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TYN612

TM

HPM

SCRs

HAOPIN MICROELECTRONICS CO.,LTD.

Limiting values in accordance with the Maximum system(IEC 134)

SYMBOL

PARAMETER

MIN

Value

UNIT

600

12
146
140

Tj=25

98

A 2S

Tj=125

50

A/ s

tp=20us Tj=125
Tj=25
Tj=125

4
5
2

A
A
mA

Tj=125

CONDITIONS

V DRM/V RRM
I T(RMS)

RMS on-state current

180 oC conduction angle

Tj=25 C tp=8.3ms

Non repetitive surge

peak on-statecurrent

I TSM

o
Tj=25 C tp=10ms

IT (AV)

Average on-state current 180 C conduction angle

It

I t Value for fusing

Critical rate of rise of
on-state current

DI/dt
I GM
I DRM
I RRM
P G(AV)

Tc=105

Tc=105

T p=10ms
IG=2x I GT,tr<=100ns

F=60H Z

Peak gate current

V DRM=V RRM
V DRM=V RRM
Average gate power
dissipation

T stg

Storage junction
temperature range

-40

150

Tj

Operating junction
Temperature range

-40

125

A
A

T J=25 C unless otherwise stated

SYMBOL PARAMETER
CONDITIONS

MIN

TYP MAX UNIT

Static characteristics
I GT
V GT

V D=12V; RL=33

IL

I G=1.2I GT

IH
V GD

I T=500mA Gate open

V D=V DRM R L=3.3K

dV/dt

V D=67%V DRM Gateopen;T J=125

15
1.3

60

mA

30

mA

0.2

200

V/us

T J=25

1.6

T J=125
T J=125

0.85
30

V
m

Tj=125

mA
V

Dynamic Characteristics
V TM

l TM=24A tp=380

V to
Rd

Threshold voltage
Dynamic resistance

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TYN612

TM

HPM

SCRs

HAOPIN MICROELECTRONICS CO.,LTD.

Description

http://www.haopin.com

3/5

TYN612

TM

HPM

SCRs

HAOPIN MICROELECTRONICS CO.,LTD.

Description

http://www.haopin.com

4/5

TYN612

TM

HPM

SCRs

HAOPIN MICROELECTRONICS CO.,LTD.

Description

http://www.haopin.com

5/5

TYN612

TM

HPM

SCRs

HAOPIN MICROELECTRONICS CO.,LTD.

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

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