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Understanding Diode Reverse Recovery and Its Effect On Switching Losses PDF
Understanding Diode Reverse Recovery and Its Effect On Switching Losses PDF
I. INTRODUCTION
0
E=1/2VIt
E=1/3VIt
E=1/6VIt
IL
Hole
concentration
in N-type region
Hole
Electron
concentration
concentration in N-type region
in P-type region
VDD
Switch
x=0
N-type
Diode conducting
P-type
IDIODE
VDIODE
+
+
x=0
P-type
DC Bus
VSWITCH
-
N-type
Diode blocking
ISWITCH
Reference GND
Figure II-3: Circuit to show the effect of diode reverse
recovery on the diode and on the semiconductor switch
IL + IRRM
IL
iSWITCH
VDD
vSWITCH
iDIODE
IRRM
tR
-VDD
tA
tB
vDIODE
1
t B VDDIRRM
6
(1)
1
VDDIL t R
2
1
1
1
+ VDD (IL + IRRM )t A + VDD ( IL + IRRM )t B
2
2
3
(2)
1
1
VDDIL t R + VDD ( IL )t B
2
2
(3)
(4)
(5)
EON SWITCH
1
1
2
2
VDDIL
IL VDD
= 2
+ 2
di
dv
dt
dt
(6)
A-26
A-27
vs
Input Voltage
90
80
70
Eon @ MUR1560
Eon @ RURP860
Eon @ RURD660
Eon @ FFPF10UP60
Eon @ ISL9R1560
Eon @ RHRP860
Eon @ ISL9R860
Eon @ ISL9R460
Eon @ SIC 6A
60
50
40
30
20
10
0
0
50
100
150
200
250
300
350
vs
Input Voltage
50
45
40
TABLE I
DIODES AND MOSFET BODY DIODES USED IN THE EVALUATION
35
Eon @ ISL9R1560
30
Eoff @ ISL9R1560
25
Part Number
Description
FCP11N60F
Eon @ ISL9R460
Eoff @ ISL9R460
20
15
FQP5N50CF
10
0
0
50
100
150
200
250
300
350
MUR1560
RURP860
RURD660
FFPF10UP60
ISL9R1560
RHRP860
ISL9R860
ISL9R460
SiC 6A
A-28
vs
Current
200
(6 repeated)
160
140
Eon and Eoff Losses [uJ]
180
Eon @FCP11N60F
Eon @ FQPF5N50CF
Eon @ RURD660
Eon @ RHRP860
Eon @ ISL9R460
Eoff @ ISL9R460
120
100
80
60
40
20
0
0
Current [A]
vs
Current
14
12
EON SWITCH
1
1
2
2
VDDIL
IL VDD
= 2
+ 2
di
dv
dt
dt
10
Irr @ FCP11N60F
Irr @ FQPF5N50CF
Irr @ RURD660
Irr @ RHRP860
6
Irr @ ISL9R460
0
0
Current [A]
A-29
Irr, Reverse Recovery Peak Current of the Diode vs. Input Voltage
7
Irr @ MUR1560
Irr @ RURD660
Irr @ FFPF10UP60
Irr @ ISL9R1560
Irr @ RHRP860
3
Irr @ ISL9R860
Irr @ ISL9R460
Irr @ SIC 6A
0
0
50
100
150
200
250
300
350
vs
dI/dt
@ V = 300V @ dI/dt = 4A
10
45
40
dI/dt
@ V = 300V @ dI/dt = 4A
35
7
30
6
vs
Eon @ ISL9R3060
Eon @ FFP08H60S
Eon @ RHRP860
Eon @ ISL9R860
Eon @ ISL9R460
Eon @ ISL9R3060
Eon @ FFP08H60S
Eon @ RHRP860
Eon @ ISL9R860
Eon @ ISL9R460
25
20
15
3
10
0
0
200
400
600
800
1000
1200
1400
1600
200
400
600
800
1000
1200
1400
1600
dI/dt [A/us]
dI/dt [A/us]
A-30
VI. CONCLUSION
100
90
80
70
Etot at 300V
Etot at 200V
Etot at 100V
Eoff at 300V
Eon at 300V
Eoff at 200V
Eon at 200V
Eoff at 100V
Eon at 100V
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
800
900
1000
V. PACKAGE RECOMMENDATIONS
REFERENCES
[1]
[2]
A-32
A-33