2N3055(NPN), MJ2955(PNP)

Preferred Device

Complementary Silicon
Power Transistors
Complementary silicon power transistors are designed for
generalpurpose switching and amplifier applications.

Features http://onsemi.com
DC Current Gain hFE = 2070 @ IC = 4 Adc
CollectorEmitter Saturation Voltage 15 AMPERE
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
POWER TRANSISTORS
Excellent Safe Operating Area
PbFree Packages are Available*
COMPLEMENTARY SILICON
60 VOLTS, 115 WATTS
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 60 Vdc
CollectorEmitter Voltage VCER 70 Vdc TO204AA (TO3)
CollectorBase Voltage VCB 100 Vdc CASE 107
STYLE 1
EmitterBase Voltage VEB 7 Vdc
Collector Current Continuous IC 15 Adc
Base Current IB 7 Adc
Total Power Dissipation @ TC = 25C PD 115 W MARKING DIAGRAM
Derate Above 25C 0.657 W/C
Operating and Storage Junction TJ, Tstg   65 to +200 C
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not xxxx55G
normal operating conditions) and are not valid simultaneously. If these limits are AYYWW
exceeded, device functional operation is not implied, damage may occur and
MEX
reliability may be affected.

160

140 xxxx55 = Device Code

PD, POWER DISSIPATION (WATTS)

xxxx = 2N30 or MJ20

120 G = PbFree Package
A = Location Code
100 YY = Year
WW = Work Week
80
MEX = Country of Orgin
60

40
ORDERING INFORMATION

20 Device Package Shipping

2N3055 TO204AA 100 Units / Tray
0
0 25 50 75 100 125 150 175 200 2N3055G TO204AA 100 Units / Tray
TC, CASE TEMPERATURE (C) (PbFree)
Figure 1. Power Derating MJ2955 TO204AA 100 Units / Tray

MJ2955G TO204AA 100 Units / Tray

(PbFree)
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Preferred devices are recommended choices for future use
Reference Manual, SOLDERRM/D. and best overall value.

Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

December, 2005 Rev. 6 2N3055/D
 2N3055(NPN), MJ2955(PNP)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, JunctiontoCase RqJC 1.52 _C/W

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS*

CollectorEmitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) VCEO(sus) 60 Vdc

CollectorEmitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 W) VCER(sus) 70 Vdc

Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO 0.7 mAdc

Collector Cutoff Current ICEX mAdc

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc) 1.0
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) 5.0

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO 5.0 mAdc

ON CHARACTERISTICS* (Note 1)

DC Current Gain hFE

(IC = 4.0 Adc, VCE = 4.0 Vdc) 20 70
(IC = 10 Adc, VCE = 4.0 Vdc) 5.0

CollectorEmitter Saturation Voltage VCE(sat) Vdc

(IC = 4.0 Adc, IB = 400 mAdc) 1.1
(IC = 10 Adc, IB = 3.3 Adc) 3.0

BaseEmitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) 1.5 Vdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

Is/b 2.87 Adc

(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.5 MHz

*SmallSignal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 15 120

*SmallSignal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
*Indicates Within JEDEC Registration. (2N3055)
fhfe 10 kHz

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

20 There are two limitations on the power handling ability of

50 ms a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMP)

10 dc 1 ms breakdown. Safe operating area curves indicate IC VCE

6 limits of the transistor that must be observed for reliable
4 operation; i.e., the transistor must not be subjected to greater
500 ms dissipation than the curves indicate.
2 250 ms The data of Figure 2 is based on TC = 25C; TJ(pk) is
variable depending on power level. Second breakdown
1 pulse limits are valid for duty cycles to 10% but must be
0.6 derated for temperature according to Figure 1.
BONDING WIRE LIMIT
0.4 THERMALLY LIMITED @ TC = 25C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
0.2
6 10 20 40 60
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 2. Active Region Safe Operating Area

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 2N3055(NPN), MJ2955(PNP)

500 200
300 VCE = 4.0 V VCE = 4.0 V
TJ = 150C TJ = 150C
200 25C
100
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

25C
100 70 55 C
70 55 C
50
50

30 30
20
20
10
7.0
5.0 10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 3. DC Current Gain, 2N3055 (NPN) Figure 4. DC Current Gain, MJ2955 (PNP)
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

2.0 2.0
TJ = 25C TJ = 25C
1.6 1.6
IC = 1.0 A 4.0 A 8.0 A IC = 1.0 A 4.0 A 8.0 A

1.2 1.2

0.8 0.8

0.4 0.4

0 0
5.0 10 20 50 100 200 500 1000 2000 5000 5.0 10 20 50 100 200 500 1000 2000 5000
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)

Figure 5. Collector Saturation Region, Figure 6. Collector Saturation Region,

2N3055 (NPN) MJ2955 (PNP)

1.4 2.0
TJ = 25C TJ = 25C
1.2
1.6
V, VOLTAGE (VOLTS)

1.0
V, VOLTAGE (VOLTS)

0.8 1.2 VBE(sat) @ IC/IB = 10

VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
0.6 VBE @ VCE = 4.0 V 0.8

0.4
0.4
0.2 VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
0 0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMP)
Figure 7. On Voltages, 2N3055 (NPN) Figure 8. On Voltages, MJ2955 (PNP)

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 2N3055(NPN), MJ2955(PNP)

PACKAGE DIMENSIONS

TO204 (TO3)
CASE 107
ISSUE Z

NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
T SEATING REFERENCED TO204AA OUTLINE SHALL APPLY.
PLANE
E INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M B 1.050 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
U E 0.055 0.070 1.40 1.77
L Y G
V 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
2 K 0.440 0.480 11.18 12.19
B L 0.665 BSC 16.89 BSC
G N
H 1
0.830 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
Q
STYLE 1:
0.13 (0.005) M T Y M
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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