<sS&mi-Conductor ^Products., Una.

20 STERN AVE. TELEPHONE: (201) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
U.S.A. FAX: (201) 376-8960

2N6274
High-Power NPN Silicon 2N6275
TVansistors 2N6277
. . . designed for use In industrial-military power ampllfer and switching circuit
applications.
• High Collector Emitter Sustaining — 50 AMPERE
VCEO(sus) - 10°Vdo (Mln) — 2N6274 POWER TRANSISTORS
= 120 Vdc (Win) — 2N6275 NPN SILICON
-150Vdc(Min) — 2N6277
100,120,140,150 VOLTS
• High DC Current Gain —
250 WATTS

= 10(Mln)@lc-SOAdc
• Low Collector-Emitter Saturation Voltage —
VcE(sat) - 1 -0 Vdc (Max) @ IG - 20 Ado
• Fast Switching Times @ Ic 20 Adc
tr = 0.35ns (Max)
tg . 0.8 (is (Max)
tf *. 0.25 pa (Max)
• Complement to 2N6377-79
MAXIMUM RATINQS(I)
Rating Symbol 2N6274 2N6275 2N6277 Unit
Collector-Base Voltage VCB 120 140 180 Vdo
Collector-Emitter Voltage VCEO 100 120 160 Vdo
Emitter-Base Voltage VEB 6.0 Vdc
Collector Current — Continuous 'c 50 Adc
Peak 100
Base Current IB 20 Adc
Total Device Dissipation @ TC - 25°C PD 250 fWatts
Derate above 25'C 1.43 VW'C
Operating and Storage Junction TJ. Tstg -65 to +200 •C
Temperature Range
THERMAL CHARACTERISTIC
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case 8JC 0.7 °c/w
(1) Indicates JEDEC Registered Data.
g

\^
POWER DISSIPATION (WATTS)

g 8

\,
1

\
S

Q
0 25 50 75 100 125 150
^^

175
s2«
TC, CASE TEMPERATURE CO

Figure 1. Power Derating

Quality Semi-Conductors
 <=>e.mi-Conducto\ tfnc.
20 STERN AVE. TELEPHONE: (201) 376-2922
SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
U.S.A. FAX: (201) 376-8960

2N6274 2N6275 2N6277

•ELECTRICAL CHARACTERISTICS (TC • 25°C ""I** otherwise noted)
Characteristic Symbol I Mln | Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1 ) vCEO(sus) Vdc
IC - 50 mAdc, IB - °) 2N6274 100
2N6278 120 —
2N6277 150
Collector Cutoff Current 'CEO pAdo
(VCE -50 Vdc, I0-0) 2N6274 _ 50
(VcE -60 Vdc, IB -0) 2N627S 50
(VcE -75 Vdc, lB-0) 2N6277 50
Collector Cutoff Current ICEX
(VCE - Rated VCB. VEB(off) - 1 -5 Vdo) — 10 jiAdC
(VCE - Rated VCB, VEB(O«) - L5 Vdc, TC - 150°C) 1.0 mAdc
Emitter Cutoff Current O/BE - 6.0 Vdc, Ic - 0) !EBO — 100 liAdc
OH CHARACTERISTICS (1)
DC Current Gain hFE
IC- 1.0 Adc, VCE -4.0 Vdc) 50
IC - 20 Adc, VCE - 4.0 Vdc) 30 120
lC-50Adc,VCE-4.0Vdo) 10
Collector-Emitter Saturation Voltage VCE (««*) Vdc
IC- 20 Ado, IB -2.0 Ado) — 1,0
I C - 50 Ado, IB -10 Adc) 3.0
Base-Emitter Saturation Voltage vBE(sat) Vdc
IC- 20 Adc, IB -2.0 Adc) — 1.8
i c - so Adc, IB -10 Adc) 3.5
Base-Emitter On Voltage (lc . 20 Adc, VCE - 4.0 Vdc) VBE(on) — 1.8 Vdc
DYNAMIC CHARACTERISTICS
Current-Oaln Bandwidth Product (2) (lc - 1.0 Adc, VCE - 10 Vdc, ftest - 10 MHz) IT 30 — MHz
Output Capacitanca (Vce - 1 0 Vdc, IE . 0, f . 0.1 MHz) Cob — 600 PF
SWITCHING CHARACTERISTICS
Rise Time V — 0.35 I*
(Vcc - 80 Vdc, IC - 20 Adc, IBI - 2.0 Adc. VBE(o(() . 5.0 Vdc)
Storage Time »3 — 0.80 va
(Vcc - BO Vdc, lc - 20 Adc, lB1 - lB2 - 2.0 Adc)
Fall Time tf — 0.25 us
(Vcc - B0 Vdo- 'C - 20 Adc, IBI - >B2 - 2-°Adc>
• Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width s 300 us, Duty Cycle & 2.0%.
(2) fr-Into"•'tart

?~
ic/IB- 0
1.0 .25 ft- -
30,is 1 0.7 H
+ 21.5V
0.5
* »-
VB •(OH)' 5.0 v :: j)

1 0.3 *i
5 / /
0
| 0.2 ''^f
/< / *
/
**• • • •,„£=:
-18.5V _ f
"* 0.1
V.tfSlOna
0.07
|v@\ CC-80V
td0 ^
DUTY CYCLE. 0,5%
-4,0V O.OS - • ! •»*. ••• ^•1BS =
0.03 =
NOTE: For information of Figures 3 and 6, RB and RC were 0.02
varied to obtain desired test conditions. 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit Figure 3, Turn-On Time

Quality Semi-Conductors