Switchable Current IXCP10M90S VAK = 900 V

Regulators IXCY10M90S IA(P) = 1 - 100 mA

RDYN = 100 kΩ Ω

Symbol Test Condition Maximum Ratings

TO-220 AB
VAKR TJ = 25°C to 150°C 900 V
(IXCP)
TAB
VAGR TJ = 25°C to 150°C 900 V
1
VGK ±20 V 2
3

ID TC = 25°C -0.3 A TO-252 AA

TAB
(IXCY)
PD TC = 25°C 40 W
1
TJ -55 ... +150 °C
3
Tstg -55 ... +150 °C
TL Temperature for Soldering (max. 10 s) 260 °C
Pin connections
MD Mounting torque with screw M3 (TO-220) 0.45/4 Nm/lb.in. 1 = Gate(G), Control terminal;
with screw M3.5 (TO-220) 0.55/5 Nm/lb.in. 2 and tab = A (+) Positive terminal
3 = K (-), Negative terminal

Features

Symbol Test Condition Characteristic Values
Minimum of 900 V breakdown

(TJ = 25°C unless otherwise specified)
Resistor programmable current
min. typ. max. source

40 W continuous dissipation
VAKR RK = 300 Ω, (Fig. 1) 900 V
International standard packages
JEDEC TO-220 and TO-252
IA(P) VD = 10 V; RK = 300 Ω; (Fig. 2) 7 9 15 mA
On/Off switchable current source

VGK(off) ID = 100 µA; VD = 900 V -5 V Applications

Fig. 4

Highly stable voltage sources
ID(P) VD= 720 V; VGK = -10 V 25 µA
Current surge limiters
(Fig. 1)
Transient voltage protection

Instantaneously reacting resetable
∆VAK/∆
∆ IA(P) Dynamic resistance; VD= 10 V 100 kΩ
fuses
RK = 300 Ω; (Fig. 1)

Soft start-up circuits
RthJC Thermal Resistance junction-to-case 3.1 K/W
RthJA Thermal Resistance junction-to-ambient TO-220 80 K/W
TO-252 100 K/W

© 2000 IXYS All rights reserved 98729 (07/00)

 IXCP10M90S
IXCY10M90S
TO-220 AB Outline
A (+) ID(p)

G VD

K (-)

RK

Fig. 1 Resistor RK in series with negative pin

to achieve different current levels
100
IA(P) - milliamperes

TJ = 125oC TJ = 25oC
10

TO-252 AA Outline
1
10 100 1000 10000
Series Resistor RK - Ohms

Fig. 2. Plateau current versus external resistance

A (+) IA(P)

G VD

VGK
K (-)
PackageMarking:
Y01M90S
Fig. 3. Current regulator controlled by VG
Dim. Millimeter Inches
100
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
o A2 0 0.13 0 0.005
TJ = 25 C
b 0.64 0.89 0.025 0.035
IA(P) - milliamperes

b1 0.76 1.14 0.030 0.045

TJ = 125oC b2 5.21 5.46 0.205 0.215
10 c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
1
-3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
Gate-Source VGK - Volts L1 0.64 1.02 0.025 0.040
Fig. 4. Plateau current versus applied input voltage L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXCP10M90S IXCY10M90S