TRNG CKT CAO THNG THI HC K 2

KHOA IN T - TIN HC MN: K THUT IN T

LP: -T 12
THI GIAN LM BI: 90 pht
NGY THI: 27/06/2013
(Sinh vin khng c s dng ti liu)

Cu 1: (2.0 im)

1. Cho bit vng mu ca in tr c gi tr nh sau:

a. 1 5% c. 47 10%.
b. 470 K 10% d. 8.2 K 20%
2. Cho bit k hiu, ghi tn chn cho cc linh kin sau: diode chnh lu, transistor npn, SCR, led.

Cu 2: (2.0 im)

V mch chnh lu ton k dng cu diode. Nu ng vo l Vi = 10sint (V), phn tch mch v v
dng sng ng ra.
+10V
Cu 3: (3.0 im)

Cho mch in nh hnh bn. Bit R2 RC

transistor c hfe = 100, hre = hoe = 0, VBEQ = 0.7, 33K 2.7K C
cc t C c gi tr rt ln. Ri C
a. Tnh ton phn cc cho transistor.
b. V s tng ng tn hiu nh (s 100 RL
tng ng xoay chiu).
c. Tnh h s khuch i Av. R1 2.7K
Vi RE
3.9K C
330
Cu 4: (2.0 im)
0
Thit k mch khuch i Op-amp dng ngun i 15V (dng s lng op-amp t nht c th)
tha yu cu sau:
a. Ng ra Vo = 4V1 5V2
b. V tn hiu ng ra Vo nu V1 = 2sint (V), V2 = 1(V). Vcc=20V
(Sinh vin c th s dng cc gi tr in tr ty .)

Cu 5: (1.0 im) RB
RC
2K
12K
Cho mch in nh hnh v, cho VBE = 0.7V, = 100. Bit diode Zenner
n p. Xc nh im tnh Q.

Vz=3V RE
Ngy 25 thng 6 nm 2013 500
Khoa/B mn GV ra
0

Trn Thanh Trang Nguyn Thin Thng

KHOA IN T - TIN HC P N MN: K THUT IN T
( 1)
LP: C T 12
THI GIAN LM BI: 90 pht
NGY THI: 27/06/2013

CU 1.
a. (1 )
- Nu- en- vng kim- vng kim.
- Vng- tm- vng- vng kim.
- Vng- tm- en- vng kim.
- Xm- - .
b. (1 ) Diode chnh lu:

Transistor npn:

SCR:

Led:

CU 2.
Phn tch: (1.0 )
+ chu k dng ( u dy pha trn dng, pha di m) dng in i qua diode D1 => qua Rti =>
qua diode D4 v u dy m
+ chu k m, in p trn cun th cp o chiu ( u dy trn m, di dng) dng in i
qua D2 => qua Rti => qua D3 v u dy m.
+ Nh vy c hai chu k u c dng in chy qua ti.
Mch chnh lu ton k dung cu diode: (0.5 ). Hnh v (0.5 )

CU 3.
Tnh ton phn cc:
Mch DC (t h) (1.0 )
 1.06V
VBB=1.18V 10V
VCC=18V
RB R1 // R2 3.49K
Rc R1
1.8K VBB VCC 1.06V
RB
30.83K
2.7K R1 R2
3.49K
VBB V
C VBB RB .I B VBE RE .I E I B 0.0098mA
B Ge
Si,
100 100 RB RE
E I C I B 0.98mA
VCE VCC I C (RC RE ) 7V
Re
0.47K
0.33K
Hinh 1

Mch tng ng (1.0 )

Tm Av (1.0 )
v RL RC Rb RL
Av L Ai . h fe . . 50.5
vi Ri Rb // hie RC RL Rb hie Ri Rb // hie

CU 4.
Thit k Vo = 4V1-5V2 (1.0 )
R Rf
1 1 5
Rf Rf R1
V0 v v 4v1 5v2
R1 R2 1 2 R2 1
1
Rg Rg 2

V Vo = 8sint-5 (1.0 )

CU 5: (1.0 )
V VBE
I E IC Z 4.6mA => VCE VCC I C (RC RE ) 8.5V
RE
TRNG CKT CAO THNG THI HC K 2
KHOA IN T - TIN HC MN: K THUT IN T
LP: -T 12
THI GIAN LM BI: 90 pht
NGY THI: 27/06/2013
(Sinh vin khng c s dng ti liu)

Cu 1: (2.0 im)

1. Cho bit vng mu ca in tr c gi tr nh sau:

a. 3.95% c. 1M10%
b. 105% d. 6.8 K20%
2. Cho bit k hiu, ghi tn chn cho cc linh kin sau: diode n p, transistor pnp, JFET, led.

Cu 2: (2.0 im)

V mch chnh lu ton k dng cu diode. Nu ng vo l Vi = 20sint (V), phn tch mch v v
dng sng ng ra.
VCC = 20V
Cu 3: (3.0 im)
Cho mch in nh hnh 1. Bit
transistor c hfe = 100, hre = hoe = 0, VBEQ =
0.7, cc t c gi tr rt ln. RC=1K
R2
a. Tnh ton phn cc cho transistor.
C
b. V s tng ng tn hiu nh 20 K
C
(s tng ng xoay chiu). iL
= 100
c. Tnh h s khuch i Ai.
RL
ri R1
RE C 500
ii 1K 3,5K
500
Cu 4: (2.0 im)

Thit k mch khuch i Op-amp dng ngun i 15V (dng s lng op-amp t nht c th)
tha yu cu sau:
a. Ng ra Vo = 3V1 4V2
b. V tn hiu ng ra Vo nu V1 = 2sint (V), V2 = 2(V). Vcc=20V
(Sinh vin c th s dng cc gi tr in tr ty .)

Cu 5: (1.0 im) RB
RC
2K
12K
Cho mch in nh hnh v, cho VBE = 0.7V, = 100. Bit diode Zenner
n p. Xc nh im tnh Q.

Ngy 25 thng 6 nm 2013

Khoa/B mn GV ra Vz=3V RE
500

Trn Thanh Trang Nguyn Thin Thng

KHOA IN T - TIN HC P N MN: K THUT IN T
( 2)
LP: C T 12
THI GIAN LM BI: 90 pht
NGY THI: 27/06/2013

CU 1.
a. (1 )
- Cam- trng- vng kim- vng kim.
- Nu-en- en- vng kim.
- Nu- en- lc- bc.
- Lam- xm- .
b. (1 )
Diode n p:

Transistor pnp

JFET

Led

CU 2.
Phn tch: (1.0 )
+ chu k dng ( u dy pha trn dng, pha di m) dng in i qua diode D1 => qua Rti =>
qua diode D4 v u dy m
+ chu k m, in p trn cun th cp o chiu ( u dy trn m, di dng) dng in i
qua D2 => qua Rti => qua D3 v u dy m.
+ Nh vy c hai chu k u c dng in chy qua ti.
Mch chnh lu ton k dung cu diode: (0.5 ). Hnh v (0.5 )

Mch DC (t h) (2.0 )
CU 3.
Tnh ton phn cc:
Mch DC (t h) (1.0 )
 2.98V
VBB=1.18V 20V
VCC=18V
RB R1 // R2 2.98K
Rc R1
1.8K VBB VCC 2.98V
RB
30.83K
1K R1 R2
2.98K
VBB V
C VBB RB .I B VBE RE .I E I B 0.043mA
B Ge
Si,
100 100 RB RE
E I C I B 4.3mA
VCE VCC I C (RC RE ) 13.5V
Re
0.47K
0.5K
Hinh 1

Mch tng ng (1.0 )

Tm Av (1.0 )
i Rc Ri // Rb
Ai L h fe . . 31.4
ii Rc RL Ri // Rb hie

CU 4.
Thit k Vo = 3V1-4V2 (1.0 )
R Rf
1 1 R 4
Rf Rf 1
V0 v v 3v 4v
R1
1 2 1 2
R R2 2
1 2
R g Rg 3

V Vo = 6sint-8 (1.0 )

CU 5: (1.0 )
V VBE
I E IC Z 4.6mA => VCE VCC I C (RC RE ) 8.5V
RE