VND 7N V04 Sonda PDF

VNN7NV04 / VNS7NV04
/ VND7NV04 / VND7NV04-1
OMNIFET II:
FULLY AUTOPROTECTED POWER MOSFET
TYPE RDS(on) Ilim Vclamp 2

VNN7NV04
VNS7NV04 3
60 m 6A 40 V 2
VND7NV04 1
SOT-223 SO-8
VND7NV04-1
n LINEAR CURRENT LIMITATION

3
n THERMAL SHUT DOWN 3
1
2
1
n SHORT CIRCUIT PROTECTION
TO252 (DPAK) TO251 (IPAK)
n INTEGRATED CLAMP
n LOW CURRENT DRAWN FROM INPUT PIN ORDER CODES
PACKAGE TUBE T&R
n DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN SOT-223 VNN7NV04 VNN7NV0413TR
n ESD PROTECTION
SO-8 VNS7NV04 VNS7NV0413TR
TO-252 (DPAK) VND7NV04 VND7NV0413TR
n DIRECT ACCESS TO THE GATE OF THE
TO-251 (IPAK) VND7NV04-1 -
POWER MOSFET (ANALOG DRIVING)
n COMPATIBLE WITH STANDARD POWER
MOSFET MOSFETS from DC up to 50KHz applications.
Built in thermal shutdown, linear current limitation
DESCRIPTION
The VNN7NV04, VNS7NV04, VND7NV04 and overvoltage clamp protects the chip in harsh
VND7NV04-1, are monolithic devices designed in environments.
STMicroelectronics VIPower M0-3 Technology, Fault feedback can be detected by monitoring the
intended for replacement of standard Power voltage at the input pin.
BLOCK DIAGRAM
DRAIN
2
Overvoltage
Clamp
INPUT
Gate
1 Control
Linear
Current
Over Limiter
Temperature
3
SOURCE
FC01000
February 2003 1/29
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
ABSOLUTE MAXIMUM RATING

Value
Symbol Parameter Unit
SOT-223 SO-8 DPAK/IPAK
VDS Drain-source Voltage (VIN=0V) Internally Clamped V
VIN Input Voltage Internally Clamped V
IIN Input Current +/-20 mA
RIN MIN Minimum Input Series Impedance 150
ID Drain Current Internally Limited A
IR Reverse DC Output Current -10.5 A
VESD1 Electrostatic Discharge (R=1.5K, C=100pF) 4000 V
Electrostatic Discharge on output pin only
VESD2 16500 V
(R=330, C=150pF)
Ptot Total Dissipation at Tc=25C 7 4.6 60 W
Maximum Switching Energy (L=0.7mH;
EMAX 40 40 mJ
RL=0; Vbat=13.5V; Tjstart=150C; IL=9A)
Maximum Switching Energy (L=0.6mH;
EMAX 37 mJ
RL=0; Vbat=13.5V; Tjstart=150C; IL=9A)
Tj Operating Junction Temperature Internally limited C
Tc Case Operating Temperature Internally limited C
Tstg Storage Temperature -55 to 150 C
CONNECTION DIAGRAM (TOP VIEW)
SOURCE 1 8 DRAIN
SOURCE DRAIN
SOURCE DRAIN
INPUT 4 5 DRAIN
SO-8 Package (*)
(*) For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1.
CURRENT AND VOLTAGE CONVENTIONS
ID
VDS
DRAIN
IIN RIN
INPUT
SOURCE
VIN
2/29
1
THERMAL DATA
Value
Symbol Parameter Unit
SOT-223 SO-8 DPAK IPAK
Rthj-case Thermal Resistance Junction-case}}} MAX 18 2.1 2.1 C/W
Rthj-lead Thermal Resistance Junction-lead MAX 27 C/W
Rthj-amb Thermal Resistance Junction-ambient MAX 96 (*) 90 (*) 65 (*) 102 C/W
(*) When mounted on a standard single-sided FR4 board with 0.5cm2 of Cu (at least 35 m thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS (-40C < Tj < 150C, unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min Typ Max Unit
Drain-source Clamp
VCLAMP VIN=0V; ID=3.5A 40 45 55 V
Voltage
Drain-source Clamp
VCLTH VIN=0V; ID=2mA 36 V
Threshold Voltage
VINTH Input Threshold Voltage VDS=VIN; ID=1mA 0.5 2.5 V
Supply Current from Input
IISS VDS=0V; VIN=5V 100 150 A
Pin
Input-Source Clamp IIN=1mA 6 6.8 8
VINCL V
Voltage IIN=-1mA -1.0 -0.3
Zero Input Voltage Drain VDS=13V; VIN=0V; Tj=25C 30
IDSS A
Current (VIN=0V) VDS=25V; VIN=0V 75
ON
Static Drain-source On VIN=5V; ID=3.5A; Tj=25C 60
RDS(on) m
Resistance VIN=5V; ID=3.5A 120
3/29
1
ELECTRICAL CHARACTERISTICS (continued) (Tj=25C, unless otherwise specified)

DYNAMIC
Forward
gfs (*) VDD=13V; ID=3.5A 9 S
Transconductance
COSS Output Capacitance VDS=13V; f=1MHz; VIN=0V 220 pF
SWITCHING
td(on) Turn-on Delay Time 100 300 ns
VDD=15V; ID=3.5A
tr Rise Time 470 1500 ns
Vgen=5V; Rgen=RIN MIN=150
td(off) Turn-off Delay Time 500 1500 ns
(see figure 1)
tf Fall Time 350 1000 ns
td(on) Turn-on Delay Time 0.75 2.3 s
VDD=15V; ID=3.5A
tr Rise Time 4.6 14.0 s
Vgen=5V; Rgen=2.2K
td(off) Turn-off Delay Time 5.4 16.0 s
(see figure 1)
tf Fall Time 3.6 11.0 s
VDD=15V; ID=3.5A
(dI/dt)on Turn-on Current Slope 6.5 A/s
Vgen=5V; Rgen=RIN MIN=150
VDD=12V; ID=3.5A; VIN=5V
Qi Total Input Charge 18 nC
Igen=2.13mA (see figure 5)
SOURCE DRAIN DIODE

VSD (*) Forward On Voltage ISD=3.5A; VIN=0V 0.8 V
trr Reverse Recovery Time ISD=3.5A; dI/dt=20A/s 220 ns
Qrr Reverse Recovery Charge VDD=30V; L=200H 0.28 C
IRRM Reverse Recovery Current (see test circuit, figure 2) 2.5 A
PROTECTIONS (-40C < Tj < 150C, unless otherwise specified)

Ilim Drain Current Limit VIN=5V; VDS=13V 6 9 12 A
Step Response Current VIN=5V; VDS=13V
tdlim 4.0 s
Limit
Overtemperature
Tjsh 150 175 200 C
Shutdown
Tjrs Overtemperature Reset 135 C
Igf Fault Sink Current VIN= 5V; VDS=13V; Tj=Tjsh 15 mA
starting Tj=25C; VDD=24V
Single Pulse
Eas VIN=5V; Rgen=RIN MIN=150; L=24mH 200 mJ
Avalanche Energy
(see figures 3 & 4)
(*) Pulsed: Pulse duration = 300s, duty cycle 1.5%
4/29
2
PROTECTION FEATURES - OVERTEMPERATURE AND SHORT CIRCUIT

During normal operation, the INPUT pin is PROTECTION: these are based on sensing the
electrically connected to the gate of the internal chip temperature and are not dependent on the
power MOSFET through a low impedance path. input voltage. The location of the sensing element
on the chip in the power stage area ensures fast,
The device then behaves like a standard power accurate detection of the junction temperature.
MOSFET and can be used as a switch from DC to Overtemperature cut-out occurs in the range 150
50KHz. The only difference from the users to 190 C, a typical value being 170 C. The device
standpoint is that a small DC current IISS (typ. is automatically restarted when the chip
100A) flows into the INPUT pin in order to supply temperature falls of about 15C below shut-down
the internal circuitry. temperature.
The device integrates: - STATUS FEEDBACK: in the case of an
- OVERVOLTAGE CLAMP PROTECTION: overtemperature fault condition (Tj > Tjsh), the
internally set at 45V, along with the rugged device tries to sink a diagnostic current Igf through
avalanche characteristics of the Power MOSFET the INPUT pin in order to indicate fault condition. If
stage give this device unrivalled ruggedness and driven from a low impedance source, this current
energy handling capability. This feature is mainly may be used in order to warn the control circuit of
important when driving inductive loads. a device shutdown. If the drive impedance is high
enough so that the INPUT pin driver is not able to
- LINEAR CURRENT LIMITER CIRCUIT: limits supply the current Igf, the INPUT pin will fall to 0V.
the drain current ID to Ilim whatever the INPUT pin This will not however affect the device
voltage. When the current limiter is active, the operation: no requirement is put on the current
device operates in the linear region, so power capability of the INPUT pin driver except to be
dissipation may exceed the capability of the able to supply the normal operation drive
heatsink. Both case and junction temperatures current IISS.
increase, and if this phase lasts long enough,
junction temperature may reach the Additional features of this device are ESD
overtemperature threshold Tjsh. protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.
5/29
1
Figure 1: Switching Time Test Circuit for Resistive Load
VD
Rgen
Vgen
ID
90%
tr tf
10%
t
td(on) td(off)
Vgen
Figure 2: Test Circuit for Diode Recovery Times
A
A
D
I FAST L=100uH
OMNIFET DIODE
S B
B
150 D
VDD
Rgen
I
OMNIFET
Vgen
S
8.5
6/29
1
Figure 3: Unclamped Inductive Load Test Circuits Figure 4: Unclamped Inductive Waveforms
RGEN
VIN
PW
Figure 5: Input Charge Test Circuit
VIN
7/29
1
Source-Drain Diode Forward Characteristics Static Drain Source On Resistance

Vsd (mV) Rds(on) (mOhm)
1000 500
Tj= - 40C
950 450
Vin=0V Vin=2.5V
900 400
850 350
Tj=25C
800 300
750 250
Tj=150C
700 200
650 150
600 100
550 50
500 0
0 2 4 6 8 10 12 14 0 0.25 0.5 0.75 1 1.25
Id(A) Id(A)
Derating Curve Static Drain-Source On resistance Vs. Input

Voltage
Rds(on) (mOhm)
120
110
Id=3.5A
100
90
Tj=150C
80
70
60
50
Tj=25C
40
30
Tj= - 40C
20
10
0
3 3.5 4 4.5 5 5.5 6 6.5 7
Vin(V)
Static Drain-Source On resistance Vs. Input Transconductance

Voltage
Rds(on) (mOhm) Gfs (S)
140 20
18
120 Vds=13V
Tj=150C
16
Tj=-40C
100 14 Tj=25C
Id=6A Tj=150C
Id=1A 12
80
10
60 Tj=25C
8
Tj=-40C Id=6A 6
40
Id=1A
Id=6A 4
20 Id=1A
2
0 0
3 3.5 4 4.5 5 5.5 6 6.5 0 1 2 3 4 5 6 7 8
Vin(V) Id(A)
8/29
1 1
Static Drain-Source On Resistance Vs. Id Transfer Characteristics
Rds(on) (mOhm) Idon(A)

140 10
Tj=25C
9
120 Tj=-40C
Vds=13.5V
8 Tj=150C
Vin=3.5V
100 7
Tj=150C
Vin=5V
6
80
5
60 Vin=3.5V
4
Tj=25C
Vin=5V
40 3
Vin=3.5V
Tj=-40C
Vin=5V
2
20
1
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Id(A) Vin(V)
Turn On Current Slope Turn On Current Slope
di/dt(A/us) di/dt(A/us)
8 2.25
7 2
Vin=5V Vin=3.5V
6 Vdd=15V 1.75 Vdd=15V
Id=3.5A Id=3.5A
5 1.5
4 1.25
3 1
2 0.75
1 0.5
0 0.25
100 200 300 400 500 600 700 800 900 1000 1100 100 200 300 400 500 600 700 800 900 1000 1100
Rg(ohm) Rg(ohm)
Input Voltage Vs. Input Charge Turn off drain source voltage slope
dv/dt(V/us)
Vin(V)
300
8
7 250
Vds=12V
Id=3.5A Vin=5V
6
200 Vdd=15V
Id=3.5A
5
150
4
100
3
2 50
1
0
100 200 300 400 500 600 700 800 900 1000 1100
0
0 5 10 15 20 25
Rg(ohm)
Qg(nC)
9/29
1
Turn Off Drain-Source Voltage Slope Capacitance Variations

dv/dt(v/us) C(pF)
600
300
250
500
Vin=3.5V f=1MHz
200 Vdd=15V Vin=0V
Id=3.5A 400
150
300
100
50 200
0
100
100 200 300 400 500 600 700 800 900 1000 1100
0 5 10 15 20 25 30 35
Rg(ohm) Vds(V)
Switching Time Resistive Load Switching Time Resistive Load

t(us) t(ns)
5.5 1600
tr
5
Vdd=15V tr 1400
4.5 Id=3.5A
td(off) Vdd=15V
4 Vin=5V 1200 Id=3.5A
tf Rg=150ohm
3.5
1000
3
2.5 800
2
600
1.5 td(off)
400
1 tf
td(on)
0.5 200
0 td(on)
0 250 500 750 1000 1250 1500 1750 2000 2250 2500 0
3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Rg(ohm) Vin(V)
Output Characteristics Normalized On Resistance Vs. Temperature
ID(A) Rds(on)
12 2.25
11
2
10 Vin=5V
Vin=5V Id=3.5A
9
Vin=4.5V 1.75
8 Vin=4V
7 1.5
6 Vin=3V
5 1.25
4
1
3
Vin=2.5V
2
0.75
1
Vin=2V
0 0.5
0 1 2 3 4 5 6 7 8 9 10 11 12 13 -50 -25 0 25 50 75 100 125 150 175
VDS(V) T(C)
10/29
1 1
Normalized Input Threshold Voltage Vs. Current Limit Vs. Junction Temperature
Temperature
Vin(th) Ilim (A)
1.15 15
1.1 14
Vds=13V
Vds=Vin 13
1.05 Vin=5V
Id=1mA
12
1
11
0.95
10
0.9
9
0.85
8
0.8
7
0.75 6
0.7 5
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
T(C) Tj (C)
Step Response Current Limit
Tdlim(us)
7
6.5
Vin=5V
Rg=150ohm
6
5.5
4.5
3.5
5 10 15 20 25 30 35
Vdd(V)
11/29
1 1
SO-8 Maximum turn off current versus load inductance
ILMAX (A)
100
10
B
C
1
0.01 0.1 1 10 100
L(mH)
A = Single Pulse at TJstart=150C

B= Repetitive pulse at TJstart=100C
C= Repetitive Pulse at TJstart=125C
Conditions:
VCC=13.5V
Values are generated with RL=0
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
VIN, IL
Demagnetization Demagnetization Demagnetization
12/29
DPAK Maximum turn off current versus load inductance
ILMAX (A)
100
10
B
C
1
0.01 0.1 1 10 100
L(mH)

Conditions:
VCC=13.5V
VIN, IL
13/29
SOT-223 Maximum turn off current versus load inductance
ILMAX (A)
100
10
A
B
C
1
0.01 0.1 1 10
L(mH)

Conditions:
VCC=13.5V
VIN, IL
14/29
SO-8 THERMAL DATA
SO-8 PC Board
Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,
Cu thickness=35m, Copper areas: 0.14cm2, 0.6cm2, 1.6cm2).
Rthj-amb Vs PCB copper area in open box free air condition
SO-8 at 4 pins connected to TAB

RTHj_amb
(C/W)
110
105
100
95
90
85
80
75
70
0 0.5 1 1.5 2 2.5
PCB CU heatsink area (cm^2)
15/29
SOT-223 THERMAL DATA
SOT-223 PC Board
Cu thickness=35m, Copper areas: 0.11cm2, 1cm2, 2cm2).
RTH j-amb (C/W)
140
130
120
110
100
90
80
70
60
0 0.5 1 1.5 2 2.5
Cu area (cm^2)
16/29
DPAK THERMAL DATA
DPAK PC Board
Cu thickness=35m, Copper areas: from minimum pad lay-out to 8cm2).
RTH j_amb (C/W)
90
80
70
60
50
40
30
0 2 4 6 8 10
PCB CU heatsink area (cm^2)
17/29
DPAK Thermal Impedance Junction Ambient Single Pulse
ZT H (C/W)
1000
100 Footprint
6 cm2
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)
Thermal fitting model of an OMNIFET II in Pulse calculation formula

DPAK
Z TH = R TH + Z THtp ( 1 )
where = tp T
Thermal Parameter
Area/island (cm2) Footprint 6
R1 (C/W) 0.1
Tj R2 (C/W) 0.35
C1 C2 C3 C4 C5 C6
R3 ( C/W) 1.20
R1 R2 R3 R4 R5 R6 R4 (C/W) 2
R5 (C/W) 15
Pd
R6 (C/W) 61 24
T_amb C1 (W.s/C) 0.0006
C2 (W.s/C) 0.0021
C3 (W.s/C) 0.05
C4 (W.s/C) 0.3
C5 (W.s/C) 0.45
C6 (W.s/C) 0.8 5
18/29
SO-8 Thermal Impedance Junction Ambient Single Pulse
ZT H (C/W)
1000
Footprint
100
2 cm2
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
T ime (s)
Thermal fitting model of an OMNIFET II in SO-8 Pulse calculation formula

where = tp T
Thermal Parameter
R1 (C/W) 0.2
Tj R2 (C/W) 0.9
C1 C2 C3 C4 C5 C6
R3 ( C/W) 3.5
R1 R2 R3 R4 R5 R6 R4 (C/W) 21
R5 (C/W) 16
Pd
R6 (C/W) 58 28
T_amb C1 (W.s/C) 3.00E-04
C2 (W.s/C) 9.00E-04
C3 (W.s/C) 7.50E-03
C4 (W.s/C) 0.045
C5 (W.s/C) 0.35
C6 (W.s/C) 1.05 2
19/29
SOT-223 Thermal Impedance Junction Ambient Single Pulse
ZT H (C /W)
1000
Footprint
100
2 cm2
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
T ime (s)
Thermal fitting model of an OMNIFET II in

Pulse calculation formula
SOT-223
where = tp T
Thermal Parameter
R1 (C/W) 0.2
Tj C1 C2 C3 C4 C5 C6 R2 (C/W) 1.1
R3 ( C/W) 4.5
R1 R2 R3 R4 R5 R6
R4 (C/W) 24
Pd R5 (C/W) 0.1
R6 (C/W) 100 45
T_amb
C1 (W.s/C) 3.00E-04
C2 (W.s/C) 9.00E-04
C3 (W.s/C) 3.00E-02
C4 (W.s/C) 0.16
C5 (W.s/C) 1000
C6 (W.s/C) 0.5 2
20/29
TO-251 (IPAK) MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
H
C
A
A3
C2
A1
L2 D L
B3
B6
B5
B
3
=
=
B2
G
E
2
=
=
1
L1
21/29
11
TO-252 (DPAK) MECHANICAL DATA
mm. inch
DIM.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
R 0.2 0.008
V2 0 8 0 8
D
C
A
C2
A1
V2
A2
L2
B
=
=
FLAT ZONE
0.60 MIN.
=
B2
G
E
=
=
L4
H
22/29
SOT-223 MECHANICAL DATA
mm. inch
DIM.
A 1.8 0.071
B 0.6 0.7 0.85 0.024 0.027 0.033
B1 2.9 3 3.15 0.114 0.118 0.124

c 0.24 0.26 0.35 0.009 0.01 0.014
D 6.3 6.5 6.7 0.248 0.256 0.264
e 2.3 0.09
e1 4.6 0.181
E 3.3 3.5 3.7 0.13 0.138 0.146
H 6.7 7 7.3 0.264 0.276 0.287
V 10 (max)
A1 0.02 0.1 0.0008 0.004
0046067
23/29
SO-8 MECHANICAL DATA
mm. inch
DIM.
A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M 0.6 0.023
F 8 (max.)
24/29
1
SOT-223 TAPE AND REEL SHIPMENT (suffix 13TR)
REEL DIMENSIONS
Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C ( 0.2) 13
F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width W 12
Tape Hole Spacing P0 ( 0.1) 4
Component Spacing P 8
Hole Diameter D ( 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F ( 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 ( 0.1) 2
All dimensions are in mm.
End
Start
Top No components Components No components

cover
tape 500mm min
Empty components pockets 500mm min
saled with cover tape.
User direction of feed
25/29
1
SO-8 TUBE SHIPMENT (no suffix)
B
C Base Q.ty 100
Bulk Q.ty 2000
Tube length ( 0.5) 532
A A 3.2
B 6
C ( 0.1) 0.6
TAPE AND REEL SHIPMENT (suffix 13TR)
REEL DIMENSIONS
Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C ( 0.2) 13
F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4
TAPE DIMENSIONS
(EIA) Standard 481 rev. A, Feb 1986
Tape width W 12
All dimensions are in mm. End
Start

cover
tape 500mm min
26/29
1
DPAK FOOTPRINT TUBE SHIPMENT (no suffix)
A
6 .7 1 .8 3 .0 1 .6 C Base Q.ty 75
Bulk Q.ty 3000
2 .3 Tube length ( 0.5) 532
6 .7
A 6
2 .3
B B 21.3
C ( 0.1) 0.6
TAPE AND REEL SHIPMENT (suffix 13TR)
REEL DIMENSIONS
Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C ( 0.2) 13
F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4
TAPE DIMENSIONS
(EIA) Standard 481 rev. A, Feb 1986
Tape width W 16

End
Start

cover
tape 500mm min
27/29
1
IPAK TUBE SHIPMENT (no suffix)
A
C
Base Q.ty 75
Bulk Q.ty 3000
Tube length ( 0.5) 532
B A 6
B 21.3
C ( 0.1) 0.6
28/29
1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2003 STMicroelectronics - Printed in ITALY- All Rights Reserved.
STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia -
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
29/29
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.

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VNN7NV04 / VNS7NV04

TYPE RDS(on) Ilim Vclamp 2

n LINEAR CURRENT LIMITATION

February 2003 1/29

ABSOLUTE MAXIMUM RATING

CONNECTION DIAGRAM (TOP VIEW)

SO-8 Package (*)

CURRENT AND VOLTAGE CONVENTIONS

ELECTRICAL CHARACTERISTICS (continued) (Tj=25C, unless otherwise specified)

SOURCE DRAIN DIODE

PROTECTIONS (-40C < Tj < 150C, unless otherwise specified)

(*) Pulsed: Pulse duration = 300s, duty cycle 1.5%

PROTECTION FEATURES - OVERTEMPERATURE AND SHORT CIRCUIT

Figure 1: Switching Time Test Circuit for Resistive Load

Figure 2: Test Circuit for Diode Recovery Times

Figure 5: Input Charge Test Circuit

Source-Drain Diode Forward Characteristics Static Drain Source On Resistance

Derating Curve Static Drain-Source On resistance Vs. Input

Static Drain-Source On resistance Vs. Input Transconductance

Static Drain-Source On Resistance Vs. Id Transfer Characteristics

Rds(on) (mOhm) Idon(A)

Turn On Current Slope Turn On Current Slope

Turn Off Drain-Source Voltage Slope Capacitance Variations

Switching Time Resistive Load Switching Time Resistive Load

Output Characteristics Normalized On Resistance Vs. Temperature

Step Response Current Limit

SO-8 Maximum turn off current versus load inductance

A = Single Pulse at TJstart=150C

DPAK Maximum turn off current versus load inductance

A = Single Pulse at TJstart=150C

SOT-223 Maximum turn off current versus load inductance

A = Single Pulse at TJstart=150C

SO-8 THERMAL DATA

Rthj-amb Vs PCB copper area in open box free air condition

SO-8 at 4 pins connected to TAB

SOT-223 THERMAL DATA

Rthj-amb Vs PCB copper area in open box free air condition

RTH j-amb (C/W)

DPAK THERMAL DATA

Rthj-amb Vs PCB copper area in open box free air condition

RTH j_amb (C/W)

DPAK Thermal Impedance Junction Ambient Single Pulse

Thermal fitting model of an OMNIFET II in Pulse calculation formula

SO-8 Thermal Impedance Junction Ambient Single Pulse

Thermal fitting model of an OMNIFET II in SO-8 Pulse calculation formula

SOT-223 Thermal Impedance Junction Ambient Single Pulse

Thermal fitting model of an OMNIFET II in

TO-251 (IPAK) MECHANICAL DATA

TO-252 (DPAK) MECHANICAL DATA

A1 0.9 1.1 0.035 0.043

A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035

B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397

L4 0.6 1 0.023 0.039

SOT-223 MECHANICAL DATA

B 0.6 0.7 0.85 0.024 0.027 0.033

B1 2.9 3 3.15 0.114 0.118 0.124