Absorption spectroscopy of

semiconductors

● The energy-band structure of a semiconductor

determines

● Not only electrical properties but also optical

properties .

● Such as absorption of photons etc.

● For an absorption to take place
○ Total energy must be conserved.
○ Total momentum must be
conserved.
If hν < Eg (Light will transmit)
hν ≥ Eg (Light will absorb)

For hν < Eg
ie,
hc/λ < Eg
ie,for λ > hc/Eg (Absorption will not
occur)
For hν > Eg

Intensity of light after the absorption is given by

Beer-lambert law

Where, I(y) =Intensity after absorption

I0 =Initial intensity
α =Absorption coefficient
y = thickness of the semiconductor
Absorption coefficient α is different based on
the band gap structure

Now we have 2 types of semiconductors,

1. Direct Band gap semiconductors
2. Indirect band gap semiconductors

Based on their band structure

Two types of semiconductors
( Based on their bandgaps)
Direct Band gap
Here,

Maximum of V.B and Minimum C.B occur on the same

Ec value of k. (Energy)

Ev I.e Momentum is not changed or it is conserved

kfinal= kinitial

E(hν)=Ec - Ev ( both are at same k value )

 DIRECT SEMICONDUCTOR

Absorption coefficient ,α is given by,

OR
At hν=Eg
Absorption becomes zero (from above
equation)
So we will get the wavelngth corresponding to
the band gap. (By extrapolating the graph)

Thus the band gap can be calculated

INDIRECT BAND GAP SEMICONDUCTORS

Here,

Maximum of V.B and Minimum C.B occur at

different values of k. (Energy)

Momentum is conserved by the help of

an additional phonon.
INDIRECT SEMICONDUCTOR
At hν=Eg
Absorption becomes zero (from above equation)
So we will get the wavelength corresponding to the band gap. (By
extrapolating the graph).
Thus we can calculate the bandgap.
Direct bandgap

Wavelength

Indirect bandgap
Conversion of bandgap to wavelength
By substituting values of h,c and
converting Eg into eV,
We know
We get,
At hν=Eg ,
Absorption becomes zero,
Therefore ,
λg(in nm)=1240.8/Eg(eV)
Eg ,=h*c/λg

Therefore,

λg=h*c/E This eqn can be used for both direct

and indirect band gap
g semiconductors
THANK YOU