APM4500AK

Dual Enhancement Mode MOSFET (N- and P-Channel)

Features Pin Description

D1
• N-Channel D1
D2
20V/8A, D2
RDS(ON) =22mΩ(typ.) @ VGS = 4.5V
S1
RDS(ON) =30mΩ(typ.) @ VGS = 2.5V G1
• P-Channel S2
G2
-20V/-4.3A, Top View of SOP − 8
RDS(ON) =80mΩ(typ.) @ VGS =-4.5V
(8) (7) (6) (5)
RDS(ON) =105mΩ(typ.) @ VGS =-2.5V D1 D1 D2 D2
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available
(2) (4)
(RoHS Compliant) G1 G2

Applications

• Power Management in Notebook Computer, S1 S2

(1) (3)
Portable Equipment and Battery Powered
Systems. N-Channel P-Channel

Ordering and Marking Information

APM4500A Package Code
K : SOP-8
Assembly Material Operating Junction Temp. Range
Handling Code C : -55 to 150 °C
Temp. Range Handling Code
TR : Tape & Reel
Package Code Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device

APM4500A K : APM4500A
XXXXX XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which
are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for
MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen
free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by
weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. A.3 - May., 2008
APM4500AK

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter N Channel P Channel Unit

VDSS Drain-Source Voltage 20 -20
V
VGSS Gate-Source Voltage ±12 ±12
ID* Continuous Drain Current VGS=10V(N) 8 -4.3
A
IDM* Pulsed Drain Current VGS=-10V(P) 30 -16
IS* Diode Continuous Forward Current 2.5 -2 A
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
TA=25°C 2
PD* Power Dissipation W
TA=100°C 0.8
RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2

Electrical Characteristics (TA = 25°C unless otherwise noted)

APM4500AK
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
Drain-Source Breakdown VGS=0V, IDS=250µA N-Ch 20 - -
BVDSS V
Voltage VGS=0V, IDS=-250µA P-Ch -20 - -
Zero Gate Voltage Drain VDS=16V, VGS=0V - - 1
IDSS N-Ch
Current TJ=85°C - - 30
µA
Zero Gate Voltage Drain VDS=-16V, VGS=0V - - -1
IDSS P-Ch
Current TJ=85°C - - -30
VDS=VGS, IDS=250µA N-Ch 0.5 0.7 1
VGS(th) Gate Threshold Voltage V
VDS=VGS, IDS=-250µA P-Ch -0.5 -0.75 -1
N-Ch - - ±10
IGSS Gate Leakage Current VGS=±10V, VDS=0V µA
P-Ch - - ±10
VGS=4.5V, IDS=8A N-Ch - 22 26
Drain-Source On-State VGS=-4.5V, IDS=-4.3A P-Ch - 80 90
RDS(ON) a mΩ
Resistance VGS=2.5V, IDS=5.2A N-Ch - 30 36
VGS=-2.5V, IDS=-2A P-Ch - 105 115

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Rev. A.3 - May., 2008
APM4500AK

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

APM4500AK
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Diode Characteristics
ISD=2.5A, VGS=0V N-Ch - 0.8 1.3
VSDa Diode Forward Voltage V
ISD=-2A, VGS=0V P-Ch - -0.7 -1.3
N-Channel N-Ch - 15 -
trr Reverse Recovery Time ISD=-8A, dlSD/dt =100A/µs ns
P-Ch - 22 -
N-Ch - 7 -
qrr Reverse Recovery Charge P-Channel nC
ISD =-4.3A, dlSD/dt =100A/µs P-Ch - 6 -
Dynamic Characteristics b
N-Ch - 4 -
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ω
P-Ch - 9 -
N-Channel N-Ch - 740 -
Ciss Input Capacitance VGS=0V,
VDS=10V, P-Ch - 565 -
Frequency=1.0MHz N-Ch - 160 -
Coss Output Capacitance pF
P-Channel P-Ch - 125 -
VGS=0V, N-Ch - 125 -
Reverse Transfer
Crss VDS=-10V,
Capacitance P-Ch - 95 -
Frequency=1.0MHz

N-Channel N-Ch - 5 10
td(ON) Turn-on Delay Time
VDD=10V, RL=10Ω, P-Ch - 6 12
IDS=1A, VGEN=4.5V,
N-Ch - 11 21
tr Turn-on Rise Time RG=6Ω
P-Ch - 13 24
ns
N-Ch - 40 73
td(OFF) Turn-off Delay Time P-Channel
VDD=-10V, RL=10Ω, P-Ch - 34 62
IDS=-1A, VGEN=-4.5V, N-Ch - 23 42
tf Turn-off Fall Time RG=6Ω
P-Ch - 32 59
b
Gate Charge Characteristics

N-Channel N-Ch - 10 13
Qg Total Gate Charge
VDS=10V, VGS=4.5V, P-Ch - 6 8
IDS=8A N-Ch - 1 -
Qgs Gate-Source Charge nC
P-Channel P-Ch - 1 -
VDS=-10V, VGS=-4.5V, N-Ch - 4 -
Qgd Gate-Drain Charge IDS=-4.3A
P-Ch - 2.2 -
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.

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Rev. A.3 - May., 2008
APM4500AK

Typical Characteristics
N-Channel
Power Dissipation Drain Current
2.5 10

2.0 8

ID - Drain Current (A)

Ptot - Power (W)

1.5 6

1.0 4

0.5 2

o o
TA=25 C TA=25 C,VG=4.5V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

100 2
Normalized Transient Thermal Resistance

1
Duty = 0.5
300µs
it
ID - Drain Current (A)

10
Lim

0.2
1ms
n)
s(o

0.1
Rd

10ms 0.1
0.05
1 0.02
100ms
0.01
1s
0.01 Single Pulse
0.1 DC

2
Mounted on 1in pad
O o
TA=25 C RθJA : 62.5 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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Rev. A.3 - May., 2008
APM4500AK

Typical Characteristics (Cont.)

N-Channel
Output Characteristics Drain-Source On Resistance
20 60
VGS= 3, 4, 5, 6, 7, 8, 9, 10V
18
50

RDS(ON) - On - Resistance (mΩ)

16 2.5V
14 VGS=2.5V
ID - Drain Current (A)

40
12

10 30

8 VGS=4.5V

2V 20
6

4
10
2
1.5V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Drain-Source On Resistance Gate Threshold Voltage

40 1.6
ID=8A IDS=250µA
1.4
35
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)

1.2
30
1.0

25 0.8

0.6
20
0.4

15
0.2

10 0.0
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.3 - May., 2008
APM4500AK

Typical Characteristics (Cont.)

N-Channel
Drain-Source On Resistance Source-Drain Diode Forward
2.00 30
VGS = 4.5V
1.75 IDS = 8A
Normalized On Resistance

10
1.50

IS - Source Current (A)

o
Tj=150 C
1.25

1.00
o
Tj=25 C
1
0.75

0.50

0.25
o
RON@Tj=25 C: 22mΩ
0.00 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1200 10
Frequency=1MHz VDS=10V
1100 9
IDS=8A
1000
VGS - Gate - source Voltage (V)

8
900
7
C - Capacitance (pF)

800
Ciss 6
700
600 5
500 4
400
3
300
2
200 Coss
Crss 1
100
0 0
0 4 8 12 16 20 0 4 8 12 16 20

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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Rev. A.3 - May., 2008
APM4500AK

Typical Characteristics (Cont.)

P-Channel
Power Dissipation Drain Current
2.5 5

2.0 4

-ID - Drain Current (A)

Ptot - Power (W)

1.5 3

1.0 2

0.5 1

o
TA=25 C o
TA=25 C,VG=-4.5V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

100 2
Normalized Transient Thermal Resistance

1
Duty = 0.5

10 0.2
-ID - Drain Current (A)

0.1
it
Lim

1ms
n)

0.05
s(o

0.1
Rd

10ms
0.02
1
100ms 0.01

1s
0.01 Single Pulse
0.1 DC

2
Mounted on 1in pad
O o
TA=25 C RθJA : 62.5 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30

-VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp. 7 www.anpec.com.tw

Rev. A.3 - May., 2008
APM4500AK

Typical Characteristics (Cont.)

P-Channel
Output Characteristics Drain-Source On Resistance
20 200
VGS= -4,-5,-6,-7 -8,-9,-10V
18 180
-3V

RDS(ON) - On - Resistance (mΩ)

16 160
14
-ID - Drain Current (A)

140 VGS= -2.5V

12
120
10
100
8 VGS= -4.5V
-2V 80
6

4 60

-1.5V 40
2

0 20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20

-VDS - Drain - Source Voltage (V) -ID - Drain Current (A)

Drain-Source On Resistance Gate Threshold Voltage

160 1.6
ID= -4.3A IDS= -250µA
1.4
140
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)

1.2
120
1.0
100
0.8
80
0.6

60
0.4

40 0.2

20 0.0
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

-VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.3 - May., 2008
APM4500AK

Typical Characteristics (Cont.)

P-Channel
Drain-Source On Resistance Source-Drain Diode Forward
2.0 20
VGS = -4.5V
1.8 IDS = -4.3A 10
Normalized On Resistance

1.6
o
Tj=150 C

-IS - Source Current (A)

1.4

1.2
o
Tj=25 C
1.0 1

0.8

0.6

0.4
o
RON@Tj=25 C: 80mΩ
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5 1.8

Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

800 10
Frequency=1MHz VDS= -10V
9 IDS= -4.3A
700
-VGS - Gate - source Voltage (V)

8
600
Ciss 7
C - Capacitance (pF)

500 6

400 5

4
300
3
200
Coss 2
Crss
100 1

0 0
0 4 8 12 16 20 0 2 4 6 8 10 12

-VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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Rev. A.3 - May., 2008
APM4500AK

Package Information
SOP-8
D

SEE VIEW A

E1

h X 45

e b c
A2

0.25
A

GAUGE PLANE
SEATING PLANE
A1

L
VIEW A

S SOP-8
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.

A 1.75 0.069
A1 0.10 0.25 0.004 0.010
A2 1.25 0.049
b 0.31 0.51 0.012 0.020
c 0.17 0.25 0.007 0.010
D 4.80 5.00 0.189 0.197
E 5.80 6.20 0.228 0.244
E1 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050
0 0° 8° 0° 8°

Note: 1. Follow JEDEC MS-012 AA.

2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.

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Rev. A.3 - May., 2008
APM4500AK

Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 OD1 B A
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F

330.0±2.00 50 MIN. 12.4+2.00 13.0+0.50 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05
-0.00 -0.20
SOP- 8 P0 P1 P2 D0 D1 T A0 B0 K0

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 1.5 MIN. 0.6+0.00 6.40±0.20 5.20±0.20 2.10±0.20
-0.00 -0.40

(mm)

Devices Per Unit

Package Type Unit Quantity

SOP-8 Tape & Reel 2500

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Rev. A.3 - May., 2008
APM4500AK

Reflow Condition (IR/Convection or VPR Reflow)

TP tp
Critical Zone
TL to TP
Ramp-up

TL
Temperature

tL
Tsmax

Tsmin
Ramp-down
ts
Preheat

t 25 °C to Peak
25

Time

Reliability Test Program

Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C, 5 sec
HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C
PCT JESD-22-B, A102 168 Hrs, 100%RH, 121°C
TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
3°C/second max. 3°C/second max.
(TL to TP)
Preheat
100°C 150°C
- Temperature Min (Tsmin)
- Temperature Max (Tsmax) 150°C 200°C
60-120 seconds 60-180 seconds
- Time (min to max) (ts)
Time maintained above:
183°C 217°C
- Temperature (TL)
60-150 seconds 60-150 seconds
- Time (tL)
Peak/Classification Temperature (Tp) See table 1 See table 2
Time within 5°C of actual
10-30 seconds 20-40 seconds
Peak Temperature (tp)
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.
Notes: All temperatures refer to topside of the package. Measured on the body surface.

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Rev. A.3 - May., 2008
APM4500AK

Classification Reflow Profiles (Cont.)

Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3 3
Package Thickness Volume mm Volume mm
<350 ≥350
<2.5 mm 240 +0/-5°C 225 +0/-5°C
≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Table 2. Pb-free Process – Package Classification Reflow Temperatures

3 3 3
Package Thickness Volume mm Volume mm Volume mm
<350 350-2000 >2000
<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*
1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.

Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

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Rev. A.3 - May., 2008