Professional Documents
Culture Documents
Capacitance Meter: Department of Engineering The Australian National University
Capacitance Meter: Department of Engineering The Australian National University
Department of Engineering
The Australian National University
Capacitance Meter
Abstract
The primary design objective of this project is to build an electronic cir-
cuit that can accurately measure the capacitance for ranges as low as 10 pF. A
technique using a voltage ramp is adopted due to its simplicity and accuracy
over other capacitance measuring schemes. The systematic design and imple-
mentation of the capacitance meter is discussed. The circuit design is verified
by performing Pspice simulations and extensive lab testing. PCB designing is
also presented for the capacitance meter.
Aastha Gupta < u2505865 >, Alex Cheng < u2554184 > &
Saba Latif< u4139263 >
1 Introduction
For the purpose of this project, a voltage ramp method is adopted. The voltage
ramp method is chosen because of its accuracy and simplicity. This method involves
simple measurements of voltages; which are easier to measure than currents.
dV
The voltage ramp is given by dt
. The expression for current through capacitor is
given by:
dV
I=C (1)
dt
Where, I is the current through the capacitor C is the capacitance of the capacitor
and V is the voltage across the capacitor.
dV
C = I/ (2)
dt
V
Where I = R
This remainder of this report is organised as follows. The detailed theory of the
circuit design is presented in Section II. The implementation of the circuit is discussed
in Section III. Results are presented in Section IV. Finally conclusions are drawn in
Section V.
3
2 Theory
The key concept of the capacitance meter circuit design is to use Eq. (1) to measure
the capacitance over a very wide range, from picofarads to thousands of microfarads.
The voltage ramp circuitry is utilised to measure the rate of change of voltage across
the capacitor. The current is measured by adding a load resistor to the circuit. Using
this technique, capacitances down to about 10 pF can be measured. For higher values
of capacitances, a simple RC timing method is used to determine the capacitance.
The RC timing method uses exactly the same circuitry as the voltage ramp method.
A Microcontroller is used to automatically determine the appropriate technique to
use, and to output values on the digital display.
This section of the report systematically explains the design of the capacitance
meter. The electronic circuit can be broken down into three main sections:
2. Analogue Measurement
dVout
The voltage ramp dt
is determined by the values of the reference capacitor Cref
and reference resistor Rref . A load resistor RL is added in order to measure the output
of the voltage ramp circuit Vout . The plot of the voltage ramp output Vout waveform is
shown in figures from Section C.1 (lab testing) and Appendix B (Pspice simulation).
The circuit with the analogue measurement section is shown in Figure 2. From the
figure, we can see that the analogue measurement section consists of FETs. The test
capacitor Cmeas (capacitance to be measured) is in between the voltage ramp circuit
and analogue measurement section. At this point, it is important to note that the
voltage ramp output Vout and the voltage Vmeas across Cmeas are not the same.
dVout
For an accurate measurement, a linear voltage ramp or constant dt
is required.
dVout
Therefore, dt
should be independent of temperature and time. For a constant
dVout
dt
, Cref , Rref and Vref should be constant. For this circuit, the capacitance range
dVout
of interest is Cmeas = 10−12 to 10−4 F. Therefore, dt
= 103 , 104 , 105 is appropriate,
with RL not less than 1KΩ. The FETs Q2 to Q6 determine the range of the test
capacitor Cmeas that can be measured using this circuit.
As mentioned previously, Vout and Vmeas are not the same. It means that the
2.3 Digital measurement and control 5
Figure 3: Block diagram of voltage ramp and ADC for the measurement of Vmeas
rate of change of voltage across Cmeas does not remain constant and it changes from
dVout dVmeas
dt
(voltage ramp) to dt
. The value of Vmeas is measured using an analogue to
digital convertor (ADC). Depending on which FETs out of Q2 to Q6 are closed the
microcontroller will determine the capacitance. Figure 3 shows the block diagram of
the voltage ramp circuit and ADC, with the load resistor Rs .
dVmeas
In order to measure Cmeas using Eq. (1), we need the value of dt
. It is hard
dVmeas
to measure dt
directly from the circuit, but it can be determined accurately by
dVout
equating it to dt
. This is achieved by performing a number of iterations using an
ADC. The PIC18F4620 (micro-controller) implements this process and achieves the
target 1% accuracy.
6. End
The individual sections of the circuit, as explained in Sections 2.1, 2.2 and 2.3 are
combined together in one integrated circuit design. Please see Figure D.BLAH (in Ap-
pendix D) for the assimilated circuit design of the capacitance meter. This schematic
was made using Eagle and was used for further PCB implementation. From the
figure, it can be seen that some additional components have been added. These ad-
7
ditional components are for enhancing the circuit performance and accuracy. These
components are listed below:
1. Isolating buffers.
3 Implementation
The implementation of the circuit has been divided into 4 stages. Stage I and II verify
the performance of the analogue circuit to generate voltage ramp and output corre-
8 3 IMPLEMENTATION
sponds to the measured capacitance Cmeas . Stage III verifies the functionality of the
digital control and display circuit. Finally Stage IV is the final PCB implementation.
The circuits from Stage I, II and III are built separately, and are not expected to
reach full operational capability until implemented on final PCB.
Components used in this project are selected based on two criteria, i.e. performance
and availability. Chips in DIP packages are preferred because it is easier to implement
them as compared to the surface mount components. A DIP package also allows the
use of DIP sockets which makes replacing damaged components much easier.
• Opamp This circuit requires opamps with high sensitivity, high slew rate and
low noise to generate a linear voltage ramp and to act as buffer at the output.
These qualities are essential for accurate measurement of capacitance. The
Texas Instruments OPA350 was selected for this project. The one used in this
project is an OPA2350 chip in DIP-8 package. It consists of two opamps in one
chip package. The data sheet is provided in Appendix D1
• DAC A 12 bit DAC with internal reference from Texas Instruments is used.
This is a surface mount chip.
Pspice simulations were performed for stage I and II to verify the functionality of the
analogue circuit before physically implementing the circuit. A 30% duty cycle, using
a pulse generator was used. The schematics for Stage I and II are shown in Appendix
B. For the simulation, the values of Rref = 10K, Cref = 100nF. The values of these
3.3 Circuit Implementation 9
dVout
reference components give dt
= 103 . The load resistor Rs = 10K is used. The
schematic for stage I and II is shown in Figure 10. The simulation results can also be
found in Appendix B.
The internal electrical connections in breadboards are usually not very accurate and
degrade the performance of the circuit. So,because of the sensitive nature of this
measurement circuit, we opted to use prototype boards instead of breadboards for
stage I, II and III implementation.
Stage I and II were implemented on one prototype board, as shown in the pho-
tographs that are provided in Appendix A.
3.3.1 Stage I
Voltage is measured across RL to observe the generated voltage ramp waveform from
the integrator circuit. The MOSFET is controlled with a 5V square wave at 50Hz
with a 30% duty cycle.
Three values of dVout dt were tested using different Rref and Cref combination as
summarised in Table 1. In order to see the effect of RL on the linearity of the voltage
ramp, each voltage ramp is tested with three RL values of, 10KΩ, 1KΩ and 250Ω,
10 3 IMPLEMENTATION
dVout
dt
Rref Cref
3
10 10K 100nF
104 10K 10nF
105 10K 1nF
dVout
Table 1: Values of dt
for different combinations of Rr ef and Cr ef
3.3.2 Stage II
Stage II tests the ability of the circuit to measure capacitance of the test capacitor
Cmeas . As it was observed that RL does not have an effect, it is removed from the
circuit and the voltage across Rs is measured.
10pf and 100nF capacitors were tested with Rs = 1M Ω and Rs = 10kΩ with
dVout dVout
dt
= 104 and dt
= 103 respectively.
3.3.4 Stage IV
The first step towards PCB implementation is to design the PCB layout for the circuit
using Eagle software. The Eagle design for the board can be found in Figure 26 in Ap-
pendix D. Due to the complexity of the circuit, it was chosen to design a double-sided
PCB layout. Compactness and proximity of components were other considerations
for this choice. The circuit was designed using the available options for double-sided
11
PCBs in Eagle. A PCB 7cm×7cm in size is obtained as a result of the Eagle design
process. The PCB design is then sent to PCB manufacturers for fabrication.
In stage IV, components are then soldered onto the received PCB board and the
circuit measures the capacitance and displays it on the LCD screen when the start
button is pressed.
4 Results
4.1 Stage I
From Stage 1 implementation, a linear voltage ramp was obtained. Results were
consistent for the different values of Rref and Cref tested. The effect of the value of
RL was found to be negligible on the circuit. Figures obtained from simulations and
lab testing are shown in Appendix B and C respectively.
4.2 Stage II
Result from the Stage II implementation indicate the analogue circuit was able to
detect and measure the measure capacitance accurately. For a Cmeas = 100nF , Rref =
dVout dVmeas
10KΩ and Cref = 100nF , i.e dt
≈ dt
= 103 and Rs = 10kΩ; Vmeas = 1V was
obtained. Thus, using Eq.( 1), we get,
Vmeas dVout
Cmeas = / (3)
Rs dt
1V
Cmeas = /103 = 100nF (4)
10k
Hence, the measured capacitance corresponds to the tested value, and the capacitance
meter works accurately. Waveforms for the lab testing can be found in Appendix C,
and it can be seen that Figure 23 for Cmeas = 100nF gives a Vmeas = 1V matches to
the simulations from Figure 10 in Appendix B. Lab testing waveforms for the other
test capacitance values are also shown in Appendix C.
12 5 CONCLUSIONS
Testing of the microcontroller, showed that upon feeding a simulated input into the
ADC, a digital display onto the LCD was obtained. In order to test the real input
from the analog circuit, PCB implementation was required.
4.4 Stage IV
Unfortunately, due to a manufacturing error in the received PCB, we were not able
to test the digital implementation of the circuit. The polygon planes (copper plates/
reference ground) in the received PCB were missing and did not correspond with
the Eagle design specifications (Appendix D). One option to fix this problem was
to connect another copper plate manually by drilling holes through the PCB. This
approach is impractical and error prone. Furthermore, with the time limit constraints,
this option was not implemented.
5 Conclusions
This Analogue electronics project focussed on measuring capacitance using the voltage
ramp method. The theory of the analog and digital design of the capacitance meter
circuit has been explained in detail. The implementation consisted of four stages as
described in this report. The results from Stage I and II implementation indicate that
the circuit is capable of detecting and measuring capacitances accurately with values
as low as 10pF. Stage III results also showed a successful implementation of the digital
and control circuitry. The testing results obtained are in an excellent agreement with
the Pspice simulations. Thus, the accurate results obtained verify the validity of the
voltage ramp technique for capacitance measurement.
13
B Pspice Implementation
C Lab Testing
C.1 Stage I
dVout
Figure 11: dt
= 103 , Rref = 10kΩ, Cref = 100nF , RL = 0Ω
dVout
Figure 12: dt
= 104 , Rref = 10kΩ, Cref = 10nF , RL = 0Ω
16 C LAB TESTING
dVout
Figure 13: dt
= 105 , Rref = 10kΩ, Cref = 1nF , RL = 0Ω
dVout
Figure 14: dt
= 103 , Rref = 10kΩ, Cref = 100nF , RL = 10kΩ
dVout
Figure 15: dt
= 104 , Rref = 10kΩ, Cref = 10nF , RL = 10kΩ
C.1 Stage I 17
dVout
Figure 16: dt
= 105 , Rref = 10kΩ, Cref = 1nF , RL = 10kΩ
dVout
Figure 17: dt
= 103 , Rref = 10kΩ, Cref = 100nF , RL = 1kΩ
dVout
Figure 18: dt
= 104 , Rref = 10kΩ, Cref = 10nF , RL = 1kΩ
18 C LAB TESTING
dVout
Figure 19: dt
= 105 , Rref = 10kΩ, Cref = 1nF , RL = 1kΩ
dVout
Figure 20: dt
= 103 , Rref = 10kΩ, Cref = 100nF , RL = 250Ω
dVout
Figure 21: dt
= 104 , Rref = 10kΩ, Cref = 10nF , RL = 1kΩ
C.2 Stage II 19
C.2 Stage II
20 C LAB TESTING
dVout
Figure 22: dt
= 105 , Rref = 10kΩ, Cref = 1nF , RL = 1kΩ
dVout
Figure 23: dt
= 103 , Rref = 10kΩ, Cref = 100nF , RL = 0Ω, Rs = 10kΩ, Ct =
100nF
21
dVout
Figure 24: dt
= 104 , Rref = 10kΩ, Cref = 10nF , RL = 0Ω, Rs = 1M Ω, Ct = 10pF
E Data Sheets
The data sheet of the Opamps, microcontroller and DAC are attached on the following
pages.