EXPERIMENT

Compound Configurations
01
OBJECTIVES

1. To measure the bias voltages and currents of multistage systems.

2. To demonstrate the independence of the DC voltages and currents of one stage
in a capacitively coupled system with the DC voltages and currents of any
other stage of the system.
3. To measure the bias voltages and currents of a multistage dc coupled system.

EQUIPMENT REQUIRED

Instruments

DMM

Supplies

DC power supply
9 V battery with snap-on leads

Components

Resistors Capacitor

(1) 470 Ω ( 1 ) 0.1-uF

(2) 1 kΩ
(1) 1.2 kΩ
(1) 2.4 kΩ
(1) 2.7 kΩ
(1) 4.7 kΩ
(2) 15 kΩ
(1) 1 kΩ potentiometer

Transistors

(1) 2N3904 BJT

(1) 2N4416 JFET
RESUME OF THEORY

Typical electronic amplifying systems consist of several transistors stages

connected together. The amplification purpose dictates the nature of the
interconnection between the stages. If an amplifier is required to amplify
a signal containing frequencies well above 0 Hz, the method of coupling
most commonly employed is ac coupling. It consists of connecting a
capacitor between the collector of one stage and the base of the next stage.
In this fashion, the ac component of the collector output voltage is
connected into the base of the next stage, while the dc component of the
collector voltage is blocked from reaching that base due to the capacitor.
In effect, relative to any dc voltages and currents, stages so coupled are
isolated from each other. This makes the dc analysis of even the most
complex systems relatively easy since each stage can be analyzed
independently. In this experiment, the dc biasing levels of various stages
of an amplifier are measured. It is then demonstrated that the capacitively
coupled stages do not affect each other’s dc voltages and currents. Both
an exchange of position of the stages in the system, and a change in the
biasing network of a transistor are used in that demonstration.
The second coupling system investigated during this experiment is
a dc-coupled system. Such systems are used when very low frequency
components of a signal and even its dc component need to be amplified.
A direct connection is made between the collector of a stage and the base
of the next. Here it will be demonstrated that any change in the dc
voltages and currents in one stage affects the dc voltages and currents in
another stage. A technique of changing the bias network on one stage will
be used to show the DC dependences of the two stages used in this
experiment. The third compound bias circuit will include a BJT-JFET
combination to demonstrate analysis techniques employed for such
configurations. The coupling will be direct-coupled to permit a full
investigation of the interconnection between active devices.

PROCEDURE

Part 1. Determining the BJT (β) and JFET(IDSS and Vp) parameters

This part of the experiment will determine the BJT and JFET parameters
to be employed in the analysis of each compound configuration.

a. To determine the β for each BJT transistor construct the network of

Fig. 15.1 and insert the measured resistor values
 1.931 G Ω
888.314 M Ω

Energize the network and measure the voltages VBE and VRC. Using the
measured values of RBC and RC, calculate the levels of IB and IC, using the
equations IB = (VCC – VBE)/RB and IC = VRC/RC. Then calculate β from β =
IC/IB and insert below.

(measured) β1 = 170.68

Replace the 2N3904 with the other BJT transistor and determine its
level of β. Insert its level below. Throughout the experiment be sure you
can identify which transistor has which level of β.

(measured) β2 = 210.276

b. To determine IDSS and VP for the JFET construct the network of Fig.
15.2 and insert the measure value of RD.

600.942 M Ω
Set VGS to 0 V and measure VRD. Calculate ID = IDSS = VRD/RD using the
measured resistor and record below.

(measured) IDSS = 9.00 mA

Make VGS more and more negative until VRD = 1 mV (and ID = VRD/RD =
1 uA). Since ID is small (ID = 0A), the resulting value of VGS is the pinch-
off voltage VP. Record below.

(Measured) VP = -2.99 V

Part2. Capacitive-Coupled Multistage System with Voltage-Divider Bias

In this part, bias voltages and currents of a capacitively coupled two-stage

amplifier system are measured. The dc isolation between the two stages
will be demonstrated.
a. Construct the circuit the circuit of Fig. 15.3 using a 2N3904
transistor for each stage.

Figure 15-3 AC-coupled multistage amplifier.

b. Using the β values determined in Part 1, calculate the voltage

levels VB1, VB2, and VC2 using commercial values. Keep in
mind for dc conditions. Insert the results in Table 15.1
TABLE 15.1

VB1 VC1 VB2 VC2

Calculated values 4.77 V 9.29 V 2.76 V 14.91 V
Measured values 4.68 V 9.31 V 2.71 V 14.9 V
% Difference 1.92% 0.21% 1.85% 0.067%

c. Energize the network of Fig. 15.3 and measure the voltages

VB1, VB2, VB2, and VC2 and insert in table 15.1.

d. Calculate the percent difference between the calculated and

measured values using the following equation and insert in
Table 15.1.

% Difference = ‫׀‬V(calc) – V(meas) ‫ ׀‬x 100%

‫׀‬V(calc) ‫׀‬

e. Even though commercial resistor values were employed, are

the percent differences in general less than 10%? If not, can
you comment on why the difference was so large?

Yes, it is less than 10% diff. because we computed it correctly

f. Compare the measured values of VC, and VB. do they confirm

the fact that the capacitor CC assumes an open-circuit state for
dc conditions? In other words, for dc conditions, are the two
voltage-divider configurations isolated?

Yes, because there is a change in value in VB2 and VC2, as

you can see the results are inversely proportional to each
other as the VB1 increase the VB2 decrease.

Part 3. DC-Coupled Multistage Systems

In this part the bias voltages of a dc-coupled two-stage transistor amplifier

will be calculated, measured and compared. The primary purpose is to
demonstrate that the dc levels of one stage will have a direct effect on the
dc levels of the other stage.
 a. Construct the network of Fig. 15.4 using the 2N3904 transistors.

Figure 15-4 DC-coupled multistage amplifier

b. Using the β values determined in Part 1, calculate the voltage

levels VB1, VC1, VB2 and VC2 using commercial values. In this
case, proceed by first finding VB1, then VE1, IE1 and IC1
followed by VC1 assuming I’C = IC1 >>IB2. Once VC1 = VB2 is
known VE2 and the remaining unknowns can be found. Insert
the results in Table 15.2.

TABLE 15.2

VB1 VC1 VB2 VC2

Calculated Values 4.77 V 9.29 V 9.29 V 12.84 V
Measured Values 4.68 V 9.20 V 9.20 V 13 V
% Difference 1.92% 0.98% 0.98% 1.23%

c. Energize the network of Fig. 15.4 and measure the voltages

VB1, VC1, VB2, VC2 and insert in Table 15.2.

d. Calculate the percent differences between the calculated and

measured values using Eq. 1 and insert in Table 15.2.
 e. Even though commercial resistor values were employed, are
the percent differences in general less than 10%? If not, can
you comment on why the difference was so large?

Yes, it is less than 10% diff. because we computed it correctly

f. Compare the measured values of VC1 and VB2. Are they equal
as expected? Comment on how the dc voltage levels of one
stage directly affected the dc voltage levels of the other stage.

Yes, they are equal as expected because they are connected.

Part 4. A BJT-JFET Compound Configuration

A compound configuration with both BJT and JFET transistors will now
be examined from a DC viewpoint. The configuration of Fig. 15.5 is
directly coupled resulting in a direct link in DC levels between the two
transistors.
a. Construct the network of Fig. 15.5 using a 2N3904 BJT
transistor and the 2N4416 JFET transistor.
Figure 15-5 BJT-JFET Compound Configurations

b. Using the β, IDSS and VP levels determined in Part 1, calculate

the dc levels of VB, VC and VD using commercial values. In
this case initiate your analysis by first finding VB and then the
level of IC. Then determine the level of VD. Using Shockley’s
equation find the level of VGS followed by VC. Insert the
results in Table 15.3.

TABLE 15.3
VB VD VC
Calculated Values 7.16 V 15.72 V 7.91 V
Measured Values 7.04 V 15.9 V 7.84 V
% Difference 1.70% 1.13% 0.89%

c. Energize the network of Fig. 15.5 and measure the voltages

VB, VD and VC and insert in Table 15.3.
d. Calculate the percent differences between the calculated and
measured values Eq. 15.1 and insert in table 15.3.
e. Even though commercial resistor values were employed are
the percent differences in general less than 10%? If not, can
you comment on why the difference was so large?
f. Determine the voltage VGS from the measurements of Table
15.3. How does it compare to your calculated value from Part
4(b)?

-704 mV
(measured) VGS = ______________
(calculated) VGS = ______________
-752 mV

g. Determine the voltage VRD from measured values and

calculate the drain current from Ohm’s law using the
commercial resistor value. How does the measured value of
ID compare to the calculated value of Part 4(b)?

5.24 mA
(measured) ID = ______________
(calculated) ID = ______________
5.29 mA

h. Using VBE = 0.7 calculate the voltage VE from the measured

values of Table 15.3 and then calculate I C using the
commercial resistor value. How does the measured value of I C
compare to the measured value of ID in Part 4(g)?

5.27 mA
 (measured) IC = ____________

Analysis and Conclusion:

Problems and Exercises

a. For the network 15.3 how will the level of VB and VC for each transistor change if the
two voltage-divider configurations are interchanged?

No they will not change because they have the same transistor.

b. Will the level of VB and VC for each transistor of Fig. 15.3 change if the resistive
components maintain their current positions and the transistors are interchanged? Why?

No, they will not change.

They will maintain their current position, because they have the
same transistor.

c. Will there be a significant change in the level of VE2 for the network of Fig. 15.4 if the
resistive components maintain their current positions and the transistors are
interchanged? Support your conclusions with numerical calculations.

There will be NO significant change if the transistor are

interchange because they have the same transistor. The results will
be the same.

d. Remove the 1 MΩ resistor and interchange the positions of the BJT and JFET of Fig.
15.5. Calculate the resulting level of VB, VD, and VC and compare to the levels of part
4(b). Have they changed considerably? Was the change in level expected? Why?
If the transistor are interchange, the value of Vb will increase to 30V and the Vc will
decrease to 1.68V, because they are inversely proportional to each other. There will be a
big change in their value.
 VB1 VC1 VB2 VC2
Calculated values 4.77 V 9.29 V 2.76 V 14.91 V
Measured values 4.68 V 9.31 V 2.71 V 14.9 V
% Difference 1.92% 0.21% 1.85% 0.067%
 VB1 VC1 VB2 VC2
Calculated Values 4.77 V 9.29 V 9.29 V 12.84 V
Measured Values 4.68 V 9.20 V 9.20 V 13 V
% Difference 1.92% 0.98% 0.98% 1.23%
 VB VD VC
Calculated Values 7.16 V 15.72 V 7.91 V
Measured Values 7.04 V 15.9 V 7.84 V
% Difference 1.70% 1.13% 0.89%