PHYSICAL CONSTANTS

c0 speed of light in vacuo 299 792 458 [m·s-1]

ε0 vacuum permittivity 8.854 187 ·10-12 [A·s·V-1·m-1]
h Planck constant 6.626 069 ·10-34 [J·s]
kB Boltzmann constant 1.380 649 ·10-23 [J·K-1]
m0 electron rest mass 9.108 ·10-31 [kg]
μ0 vacuum permeability 4π ·10-7 [V·s·A-1·m-1]
q elementary charge 1.602 ·10-19 [C]
Z0 impedance of free space 367.7 [Ω]

SELECTED PROPERTIES OF SILICON (AT 300 K)

EG energy band gap 1.12 [eV]
εr relative permittivity 11.7 [-]
μe electron mobility 1350 ·10-4 [m2·V-1·s-1]
μh hole mobility 480 ·10-4 [m2·V-1·s-1]
NC effective density of states in the conduction band 3.0 ·1025 [m-3]
NV effective density of states in the valence band 1.0 ·1025 [m-3]
ni intrinsic concentration of carriers 1.5 ·1016 [m-3]
n refractive index 3.5 (at λ=1100nm) [-]