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Volume 3 Issue 5, August 2019 Available Online: www.ijtsrd.com e-ISSN: 2456 – 6470
I. INTRODUCTION
Electricity market activities and a growing demand for FACTS-devices for shunt compensation, like SVC and
electricity have led to heavily stressed power systems. This STATCOM, and series compensation, like Thyristor
requires operation of the networks closer to their stability Controlled Series Compensator (TCSC) and Static
limits. Power system operation is affected by stability related Synchronous Series Compensator (SSSC), the modeling of the
problems, leading to unpredictable system behavior. Cost latest FACTS-devices for power flow control, compensation
efficient solutions are preferred over network extensions. In and power quality (Interline Power Flow Controller (IPFC),
many countries, permits to build new transmission lines are Generalizes Unified Power Flow Controller (GUPFC), VSC
hard to get, which means the existing network has to be HVDC and Multi-VSC-HVDC, etc.) is considered for power
enforced to fulfill the changing requirements. system analysis. FACTS device models are implemented in
power flow and optimal power flow (OPF) calculations.
Power electronic network controllers, called FACTS-devices, In most of the applications the controllability is used to avoid
are well known having several years documented use in cost intensive or landscape requiring extensions of power
practice and research. Several kinds of FACTS-devices have systems, for instance like upgrades or additions of
been developed. Some of them such as the Thyristor based substations and power lines. FACTS-devices provide a better
Static Var Compensator (SVC) are awidely applied adaptation to varying operational conditions and improve
technology; others like the Voltage Source Converter (VSC) the usage of existing installations.
based or Gate Turn-off Thyristor (GTO) based Static
Compensator (STATCOM) or the VSC-HVDC are being used in The basic applications of FACTS-devices are:
a growing number of installations worldwide In general, power flow control,
FACTS-devices can be utilized to increase the transmission increase of transmission capability,
capacity, the stability margin and dynamic behavior or serve voltage control,
to ensure improved power quality. Their main capabilities reactive power compensation,
are reactive power compensation, voltage control and power stability improvement,
flow control. Due to their controllable power electronics, power quality improvement,
FACTS device provide always a fast controllability in power conditioning,
comparison to conventional devices like switched flicker mitigation,
compensation or phase shifting transformers. Different interconnection of renewable and distributed
control options provide a high flexibility and lead to multi- generation and storages.
functional devices.
@ IJTSRD | Unique Paper ID – IJTSRD27887 | Volume – 3 | Issue – 5 | July - August 2019 Page 2158
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In all applications the practical requirements, needs and III. POWER ELECTRONIC SEMICONDUCTORS
benefits have to be considered
idered carefully to justify the Power electronics have a widely spread range of applications
investment into a complex new device. The usage of lines for from electrical machine drives to excitation systems,
active power transmission should be ideally up to the industrial high current rectifiers for metal smelters,
thermal limits. Voltage and stability limits shall be shifted frequency controllers or electrical trains. FACTS-devices
FACTS are
with the means of the several different FACTS d devices. It can just one application besideide others, but use the same
be seen that with growing line length, the opportunity for technology trends. It has started with the first Thyristor
FACTS devices gets more and more important. The influence rectifiers in 1965 and goes to the nowadays modularized
of FACTS-devices
devices is achieved through switched or controlled IGBT or IGCT voltage source converters.
shunt compensation, series compensation or phase shift
control. The devices work electrically as fast current, voltage
or impedance controllers. The power electronic allows very
short reaction times down to far below one second.
II. POWER FLOW CONTROLLER DEVICES
The development of FACTS-devices
devices has started with the
growingg capabilities of power electronic components.
Devices for high power levels have been made available in
converters for high and even highest voltage levels. The
overall starting points are network elements influencing the
reactive power or the impedance off a part of the power
system.
The term 'dynamic' is used to express the fast controllability Fig2. Ranges of converter voltages and power of
of FACTS-devices
devices provided by the power electronics. This is applications for power semiconductors [2]
one of the main differentiation factors from the conventional
devices. The term 'static' means that thee devices have no Thyristor is a device, which can be triggered with a pulse at
moving parts like mechanical switches to perform the the gate and remains in the on-stage
on until the next current
dynamic controllability. Therefore most of the FACTS FACTS- zero crossing. Therefore only one switching per half-cycle
half is
devices can equally be static and dynamic. possible, which limits the controllability. Thyristors have the
highest current and blocking voltage. This means that fewer
The left column in Fig(1)
(1) contains the conventional devices semiconductors need to be used for an application.
built out of fixed or mechanically
ically switchable components Thyristors are used as switches for capacities or inductances,
like resistance, inductance or capacitance together with in converters for reactive power compensators or as
transformers. The FACTS-devices
devices contain these elements as protection switch for less robust power converters.
well but use additional power electronic valves or converters
to switch the elements in smaller steps or with sw switching Thyristors are still the devices for applications with the
patterns within a cycle of the alternating current. The left highest voltage and power levels. They are part of the mostly
column of FACTS-devices
devices uses Thyristor valves or used FACTS-devices
devices up to the biggest HVDC-Transmissions
HVDC
converters. These valves or converters are well known since with a voltage level above 500 kV and
an power above 3000
several years. They have low losses because of their low MVA.
switching frequency off once a cycle in the converters or the
usage of the Thyristors to simply bridge impedances in the To increase the controllability, GTO-Thyristors
GTO have been
valves. developed, which can be switched off with a voltage peak at
the gate. These devices are nowadays replaced by Insulated
The right column of FACTS-devices
devices contains more advanced Gate Commutated Thyristors (IGCT), which combine the
technology of voltage source converters based today mainly advantage
dvantage of the Thyristor, the low on stage losses, with low
on Insulated Gate Bipolar Transistors
stors (IGBT) or Insulated switching losses.
Gate Commutated Thyristors (IGCT). Voltage Source
Converters provide a free controllable voltage in magnitude These semiconductors are used in smaller FACTS-devices
FACTS
and phase due to a pulse width modulation of the IGBTs or and drive applications. The Insulated Gate Bipolar Transistor
IGCTs. High modulation frequencies allow to get low (IGBT) is getting more and more importance in the FACTS
harmonics in the output signal and even to compensate area.
a. An IGBT can be switched on with a positive voltage and
disturbances coming from the network. The disadvantage is switched off with a zero voltage. This allows a very simple
that with an increasing switching frequency, the losses are gate drive unit to control the IGBT. The voltage and power
increasing as well. Therefore special designs of the level of the applications is on the way to grow up to 300 kV
converters are required to compensate thithis. and 1000 MVA for HVDC VDC with Voltage Source Converters.
In each column the elements can be structured according to The IGBT capability covers nowadays the whole range of
their connection to the power system. The shunt devices are power system applications. An important issue for power
primarily for reactive power compensation and therefore semiconductors is the packaging to ensure a reliable
voltage control. The SVC provides in comparison to the connection to the gate drive unit. This electronic circuitcirc
mechanically switched compensation a smoother and more ensures beside the control of the semiconductor as well its
precise control. It improves the stability of the network and supervision and protection. A development in the Thyristor
it can be adapted instantaneously to new situations. The area tries to trigger the Thyristor with a light signal through
STATCOM goes one step further and is capable of improving an optical fiber. This allows the decoupling of the
the power quality against even dips and flicke
flickers. Semiconductor and the gate[2].
Fig3.
3. STATCOM equivalent circuit [9]
Fig8.
8. Simulation results Vabc(pu), Iabc (pu/100MVA)
and Van, Vab of three-phase
phase 24-pulse
24 GTO converter
Voltages generated by the inverter (trace 1), load currents
(trace 2), phase-neutral
neutral voltage and phase-phase
phase voltage of
one of the four inverters (1Y) superimposed on trace 3.
When the inverter is operating at no load, can be observe the
three 24-step voltage
age waveform. When the load is switched
on the voltage becomes smoother because harmonics are
Fig7.
7. Inside model of firing pulse generator filtered by the transformer leakage reactances.
ACKNOWLEDGEMENT
The author wishes to thank to Dr.Yadana Aung, Professor
and Head, Department of Electrical Power Engineering,
Technological University (Mandalay).
REFERENCES
[1] L. Gyugyi, 1979, “Reactive Power Generation and
Control by Thyristor Circuits,” IEEE Trans. on Industry
Applications.
[2] Rolf Grünbaum, Åke Petersson and Björn
Thorvaldsson, 2003, “FACTS, Improving the
performance of electrical grids”, ABB Review.
[3] N. Hingorani, L. Gyugyi, 2000, “Understanding FACTS,
Concepts and Technology of Flexible AC Transmission
Systems,” IEEE Press, New York.
[4] Dr. Xiao-Ping
Ping Zhang, Bikash Pal
Pa and Dr. Christian
Rehtanz., 2006, “Modelling and Control of Flexible AC
Transmission System”, Springer-Verlag
Springer Berlin
Heidelberg, Germany.
Fig11. Total harmonic distortion of Van, Vab converter [5] R. Mohan Mathur, Rajiv K. Varma, 2002, “Thyristor-
“Thyristor
1Y in three-phase 24-Pulse
Pulse GTO converter based FACTS Controllers for Electrical Transmission
@ IJTSRD | Unique Paper ID – IJTSRD27887 | Volume – 3 | Issue – 5 | July - August 2019 Page 2163