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Angular velocity, w =
Axis Axis
w For discrete body, Angular acceleration, a =
w q = w0t + at 2
w For continuous body,
w w 2 = w02 + 2aq
Axis Axis
l Centre of mass of symmetric body l Torque : Turning effect of the force
about the axis of rotation. R1
w Semi-circular ring, L
R2
l Angular momentum,
w Semi-circular disc, l Work done by torque, W = tdq
l Power, P = tw
Axis Axis
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MECHANICAL PROPERTIES
OF SOLIDS AND FLUIDS
CLASS XI
Young’s modulus RELATION BETWEEN Y, B, G AND s APPLICATION OF ELASTICITY
Bulk modulus, l Y = 3B(1 –2s) l Y = 2G(1 +s) Designing beams for bridges
The depression in rectangular
l l
beam,
Compressibility, k = 1/B
ELASTIC POTENTIAL ENERGY l
HOOKE’S LAW
Modulus of rigidity
Stress µ Strain P.E. stored per unit volume of stretched wire,
or Stress = E ´ Strain,
(E = modulus of elasticity)
Poisson’s ratio
s
ELASTICITY AND PLASTICITY
STRESS AND STRAIN Elasticity : Ability of a body to regain
l
PROPERTIES its original shape, on removing
OF deforming force.
Plasticity : The inability of a body to
l
SOLIDS regain its original size and shape on
the removal of the deforming forces.
circuit
l If coils are far away, then M = 0.
l Energy stored in the solenoid, So, l Current decay in L–R circuit,
Here,
l Magnetic energy density,
Inductance
l Emf induced in the coil/conductor,
l Mutual inductance,
Lenz's Law Induced Electric
l The direction of the induced l Mutual inductance of two long coaxial solenoids, Field
current is such that it opposes l It is produced by change in
the change that has produced it. magnetic field in a region. This
l If a current is induced by an is non-conservative in nature.
increasing(decreasing) flux, it l Coefficient of coupling,
will weaken (strengthen) the
original flux. For perfect coupling, k = 1 so,
l It is a consequence of the law of l This is also known as integral
conservation of energy. form of Faraday’s law.
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RAY OPTICS AND
OPTICAL INSTRUMENTS
CLASS XII
Deviation P
APPLICATIONS OF TIR of red light(dR) A POWER OF LENSES
ligh
t Deviation of (i– r1) (e– r 2)
w Fiber optics communication ible N1 d N2
Vis R violet light (dV)
i e Power of lens :
w Medical endoscopy O
Y F r1 q r2 G f
G
w Periscope (Using prism) Angular B
E N
H Combination of lenses:
I
w Sparkling of diamond spread V Q Power: P = P1 + P2 – dP1P2
Screen R
(d = small separation between the
REFRACTION THROUGH PRISM lenses)
TOTAL INTERNAL REFLECTION Relation between m and dm For d = 0 (lenses in contact)
TIR conditions Power: P = P1 + P2 + P3 + ...
where,
w Light must travel from denser to rarer. dm = angle of minimum
deviation
w Incident angle i > critical angle ic A = angle of prism THIN SPHERICAL LENS
Relation between m and ic:
Thin lens formula :
or d = m – 1 A (Prism of small angle) f
Angular dispersion Magnification:
REFRACTION OF LIGHT = dV – dR = mV – mR A
Dispersive power,
Snell’s law: When light travels from medium a
to medium b, REFRACTION BY SPHERICAL SURFACE
Refractive index, Relation between object distance (u), image
Mean deviation,
distance (v) and refractive index (m)
(Holds for
any curved
Real and apparent depth spherical
Lens maker’s formula surface.)
f
REFLECTION OF LIGHT
REFLECTION BY SPHERICAL
According to the laws of reflection,
Ði = Ðr
RAY OPTICS MIRRORS
If a plane mirror is rotated by an Mirror formula,
f
angle q, the reflected rays rotates by
an angle 2q. Magnification, m =
OPTICAL
SIMPLE MICROSCOPE INSTRUMENTS COMPOUND MICROSCOPE
Magnifying power Magnifying power, M = mo × me
For final image is formed at D For final image formed at D (least
(least distance) distance)
f f f
For final image formed at infinity
For final image formed at infinity
f TELESCOPE f f
Astronomical telescope
For final image formed at D (least
REFLECTING TELESCOPE TERRESTRIAL TELESCOPE
f f
Magnifying power distance) f
f For normal adjustment
f f
In normal adjustment, image formed Distance between objective and
f f at infinity M = fo / fe eyepiece d = fo + 4f + fe
Electron orbits and their energy
A. Fission
B. Fusion
EXTRINSIC SEMICONDUCTORS JUNCTION TRANSISTOR
INTRINSIC SEMICONDUCTORS
SEMICONDUCTOR DIODE
BIASING CHARACTERSTICS
APPLICATIONS OF DIODE
APPLICATIONS OF TRANSISTOR
CE(n-p-n) Amplifier