2016/2017

1) A- Fill in the spaces (1 or 2 words at most for each space):

1 The current in the valance band is due to the virtual motion of holes
Upon formation of the depletion region no more electrons diffuse from N-type to P-type
2 part because of electric field which can be overcome by using appropriate forward
biasing(external energy)
Most of insulators are high resistive(or compound) and most of the conducting materials
3
are low resistive(or single-element)
The avalanche phenomena is due to minority carriers when they have enough energy to
4
release more valance electrons from nearby atoms (Floyd pg. 24)
When using the practical model for diode we neglect dynamic resistance in the forward
5 part of the characteristics and we neglect the leakage current in the reverse part of the
characteristics
The barrier potential in diode depends on many factors among them are temperature,
6
amount of doping and material type
7 The choice of biasing circuit of BJT is a trade of between price, thermal stability
The word transistor means transfer of resistor between input circuitry and output
8
circuitry
The BJT works in most cases as …….. Amplifier, and it might be used as …. Amplifier as in
9
common ……. configuration
The term saturation mode in BJT operation means the transistor itself is full with
*10 electrons and by then the collector current will only depends on collector resistance,
provided that VEE is fixed
When using LC filter as a stage after the full bridge rectifier we enhance the DC output
*11 voltage at the load by allowing most of the ac voltage drop to be on the capacitor and
coil
The surge resistance is used mainly to protect the diode against possible high current
12 that might appear as the un charged filter capacitor across the load acts as short circuit
at the first instants of time in bridge circuit
The PIV in a full wave center tapped bridge is equal to 2Vp output + 0.7 (diodes are not
13
ideal)
14 The voltage multiplier circuits are used in application of low current and high voltage
The varactor operates in reverse bias, it is used as a variable capacitor and is used in
15
tuning circuits
The dark current in photo diode is the current when the light is not indicated And it is
16
used as a variable resistor controlled by light intensity
The tunnel diode has a special feature which is negative resistance and hence it used in
17
oscillators circuits

1
2015/2016
1) A- What is meant by:
Intrinsic material Material without impurities (doping)
Extrinsic material Material with impurities (doping)
Positive temperature
coefficient
A process when a conduction electron lose energy and fall back
Recombination Process
into a hall
2) B- Fill in the spaces (1 or 2 words at most for each space)
1 The Varactor is used as capacitor in tuning circuits
Upon formation of the depletion region no more electrons diffuse from N-type to P-type
2 part because of electric field which can be overcome by using appropriate forward
biasing(external energy)
Most of insulators are high resistive(or compound) and most of the conducting materials
3
are low resistive(or single-element)
The tunnel diode has a special feature which is negative resistance and hence it used in
4
oscillators circuits
When using the practical model for diode we neglect dynamic resistance in the forward part of
5
the characteristics and we neglect the leakage current in the reverse part of the characteristics
2014/2015
1) A- Fill in the spaces (1 or 2 words at most for each space):
The term depletion region to the fact that the region near PN junction is depleted of
1
charge carriers
The barrier potential in PN junction depends on several factors among them are
2
temperature, material type and amount of doping
The reverse current is caused by the minority carriers in P and N regions that are
3
produced by thermal energy generated electron-hole pairs
The multiplication process of creating conduction electrons due to reverse bias of PN
4
junction is called avalanche process
The small increase in PN junction voltage above the barrier potential is due to voltage
5
drop across dynamic resistance
6 The transistor biasing circuit is primarily a trade-off between price and thermal stability
To increase rectified peak voltage (DC) without the need to increase the transformer
7
rating we use voltage multiplier circuits
The forward reverse bias of the transistor allows the transistor to work in active mode, and this
*8
achieved by the electric field built in the ……. Junction for common base configuration
In communication system (tuning circuits) we use varactor to adjust the resonance
9
frequency
10 The zener is used to regulate the current, it operates in the reverse bias region

2
2013/2014
1) A- Fill in the spaces (1 or 2 words at most for each space)
1 The current flows in valance band is due to the virtual motion of holes
Upon formation of the depletion region no more electrons diffuse from N-type to P-type
2 part because of electric field which can be overcome by using appropriate forward
biasing(external energy)
Most of insulators are high resistive(or compound) and most of the conducting materials
3
are low resistive(or single-element)
The avalanche phenomenon takes place due to minority carriers when they have enough
4
energy to release more valance electrons from nearby atoms (Floyd pg. 24)
When using the practical model for diode we neglect dynamic resistance in the forward part of
5
the characteristics and we neglect the leakage current in the reverse part of the characteristics
2012/2013
1) A- Correct and justify in brief ‫صحح الخطأ مع التعليل باختصار‬
‫الخطأ‬ ‫التصويب‬ ‫التعليل‬
electron created by doping doesn’t leave a hole
By thermal
1 By doping because it is in excess of the number required to fill
energy
the valance band
Because hole is created in P type material by trivalent
2 holes electrons
impurities
Not Because number of negative charges is equal to
electrically
3 electrically number of positive charges (there is no lost or gain in
neutral
neutral electrons)
When 2 different
By the junctions
4
external …… attached to each
other
1) B- fill in the spaces:
The term depletion region to the fact that the region near PN junction is depleted of
1
charge carriers
The barrier potential in PN junction is dependent on temperature, material type and
2
amount of doping
Due to the forward bias of PN junction the depletion region is reduced because Negative
3 terminal of source ripple electrons in N type and Positive terminal of source ripple holes
in P type (effectively) -or attract electrons from P type-
The multiplication process of creating conduction electrons due to reverse bias of the
4
junction is called avalanche process