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<Author Name 1 and Author Name 2>

1.1.Phenomenon
Detailed 2 dimensional examination at the ends of the channel shows that some
of the depletion charge is balanced by the n+ source and drain.
𝑄′𝐵
Q’M+Q’N+Q’B=0, VT =VFB +2𝝫0+ 𝐶𝑜𝑥𝐴′ , Q’B=qANAWDm (for long channel device)
Where A=Z*L and Q’M is the total charge on the gate ,Qn is the total inversion
layer charge , Q’B is the total ionized impurity in the depletion region
√2𝜀(2𝞧−𝑽𝒃𝒔)
All oxide and interface charges are zero WDm= √𝒒𝑵𝒂
For short chnnel devices , full effect of Q’B ON THREHOLD IS REDUCED
(𝐿+𝐿 )′
Total bulk depletion charge is Q’B = ZqNAWDm , for small drain bias ,WD ≈
2
𝑊 S ≈ WDm , L’=L-2(√𝑥𝑗 2 + 2𝑊𝑑𝑚𝑥𝑗 - xj ) ,threshold voltage shift from long
Q′b 𝐿+𝐿′
channel behaviour ∆𝑉𝑡 = ( − qNaWdm) =- qANAWDm(1-- )
ZL 2
qANAWDm xj 2𝑊𝑑𝑚
=- (√1 + − 1 ) , the negative sign means Vt is lowered and the
𝐿𝐶𝑜𝑥 𝑥𝑗
transistor is easier to turn on

qANAWDm xj 2𝑋𝑑𝑆 2𝑋𝑑𝐷

∆𝑉𝑡 = − [ (√(1 + ) − 1)) + (√(1 + ) − 1)
𝐿𝐶𝑜𝑥 𝑥𝑗 𝑥𝑗

√2𝜀𝞥𝒔𝒊 √2𝜀(𝞥𝒔𝒊+𝑽𝒅𝒔)
Where, XdS and XdD are given as, XdS = , XdD =
𝒒𝑵𝒂 𝒒𝑵𝒂
Note ,that the threshold voltage becomes a function of both L and Vds.