CMOS Fabrication

n-well process
 p-doped Wafer

p-substrate
 Oxidation

SiO2

Oxidation

p-substrate
 Photoresist

Photo-resist
Oxidation

p-substrate
 Photolithography

UV rays

Photo-resist
Oxidation

p-substrate
Removal of soluble photoresist

Photoresist
Oxidation

p-substrate
 Removal of exposed SiO2

Photo-resist
Oxidation

p-substrate
Removal of remaining photoresist

Oxidation

p-substrate
N-well formation using diffusion

Oxidation

n-well

p-substrate
 Removal of remaining SiO2

n-well

p-substrate
 Gate oxide and Polysilicon Layer

Thin gate Polysilicon layer

oxide

n-well

p-substrate
 Photolithography

UV rays

Thin gate Polysilicon layer

oxide

n-well

p-substrate
Removal of soluble polysilicon

n-well

p-substrate
 Gate oxide masking

Thick gate
oxide

n-well

p-substrate
 Photolithography

UV rays

n-well

p-substrate
Removal of exposed gate oxide

n-well

p-substrate
Ion implantation of n+
dopants

n+ n+ n+

n-well

p-substrate
Ion implantation of p+
dopants (similar way)

p+ n+ n+ p+ p+ n+

n-well

p-substrate
 Metallization
(uses Aluminum)

p+ n+ n+ p+ p+ n+

n-well

p-substrate
 Removal of excess metal

p+ n+ n+

p+ p+ n+

n-well

p-substrate
 Terminals: pMOS and nMOS

B S G D D G S B

p+ n+ n+
p+ p+ n+

n-well

p-substrate