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10 Resistance and resistivity Exam practice questions

Page 142–144 Exam practice questions


1 The number of charge carriers per unit volume will remain virtually constant with temperature (it
would actually reduce very slightly as the copper expanded, but this would be almost negligible
over the temperature range of 0°C−100°C) – the answer is B. [Total 1 Mark]
2 The resistance would increase linearly with temperature from a finite value at 0°C (not zero) –
the answer is C. [Total 1 Mark]
3 The resistance of a thermistor decreases with temperature due to the significant increase in the
number of charge carriers – the answer is D. [Total 1 Mark]
4 a) Between the longer edges of the chip:
𝑙 = 5 mm = 5 × 10−3 m [1]
−3 −3 −6 2
𝐴 = 10 mm × 1 mm = 10 × 10 m × 1 × 10 m = 10 × 10 m [1]
Resistance is:
𝜌𝜌 3.0 × 10−5 Ω m ×5 ×10−3 m
𝑅 = = = 15 × 10−3 Ω [2]
𝐴 10 × 10−6 m2

b) Between the faces of the chip:


𝑙 = 1mm = 1 × 10−3 m
𝐴 = 10 mm × 5 mm = 10 × 10−3 m × 5 × 10−3 m = 50 × 10−6 m2 [1]
Resistance is:
𝜌𝜌 3.0 × 10−5 Ω m ×1 × 10−3 m
𝑅 = = = 6 × 10−4 Ω [1]
𝐴 50 × 10−6 m2

[Total 6 Marks]

5 a) From Figure 9.1b on page 129, the potential difference is about 0.7 V for a current of 40 mA.
Using R = V/I gives:
0.7 V
𝑅 = = 17.5 Ω ≈ 18 Ω [3]
40 × 10−3 A

b) Draw a straight line through the origin and the point (0.8 V, 16 mA). This represents a
resistance of 50 Ω. This cuts the curve at about 0.6 V, so the component will have a resistance
of 50 Ω when the potential difference across it is about 0.6 V.
As a check, the current at 0.6 V is about 12 mA, giving:
𝑉 0.6 𝑉
𝑅 = = = 50 Ω [3]
𝐼 12 ×10−3 𝐴

[Total 6 Marks]

6 a) i) Rearranging P = VI,
𝑃 3000 W
𝐼 = = = 12.5 A [2]
𝑉 240 V

So the kettle will operate safely with a 13 A fuse. [1]


𝑉
ii) From 𝑅 =
𝐼
240 V
𝑅 = = 19.2 Ω ≈ 19 Ω [2]
12.5 A

© Graham George & Mike Benn 2015


10 Resistance and resistivity Exam practice questions

𝑉
b) i) At 110 V, from 𝐼 =
𝑅
110 V
𝐼 = = 5.7 A [2]
19.2 Ω
𝑉2
ii) The power dissipated is given by 𝑃 = :
𝑅
(110 V)2
𝑃 = = 630 W [2]
19.2 Ω

c) The assumption is reasonable. As a kettle is used to boil water, the element will heat up the
water until both reach a temperature of 100°C whether the voltage is 240 V or 110 V – it will
just take longer at 110 V. As the temperature of the element is the same in both cases, its
resistance will be the same. [2]
[Total 11 Marks]

7 a) The resistivity ρ of a material is defined by the equation:


𝑅𝑅
ρ= [1]
𝑙

where R is the resistance of a length l of the material, having an area of cross-section A


perpendicular to the length. [1]
𝜌𝜌 𝑅 𝜌 1.72 × 10-8 Ω m −1
b) i) R= ⇒ = = = 0.0701 Ω m [2]
𝐴 𝑙 𝐴 0.2453 × 10-6 m2

π𝑑 2 4𝐴 4 × 0.1110 mm2
ii) A= ⇒d=� =� = 0.3759 mm [2]
4 π π

𝑅𝑅 𝑅 −1 −6 2 −7
iii) ρ= = × A = 4.41 Ω m × 0.1110 × 10 m = 4.90 × 10 Ω m [2]
𝑙 𝑙

π𝑑 2 π × (0.2743 mm) 2 2
iv) A= = = 0.0591 mm [2]
4 4
𝑅𝑅 𝑅 −1 −6 2 −6
v) ρ= = × A = 18.3 Ω m × 0.0591 × 10 m = 1.08 × 10 Ω m [2]
𝑙 𝑙

[Total 12 Marks]

8 a) As the graph is a straight line through the origin, it shows that the current is proportional to
the potential difference, which is Ohm’s law. [2]
b) Resistivity is given by ρ = RA/l. We are given 𝑙 (= 2.00 m), A can be found from the diameter
(D = 0.25 mm) and R can be found from the inverse gradient of the graph:
π𝐷2 π × (0.25 ×10−3 m)2
𝐴 = = = 4.91 × 10−8 m2 [2]
4 4
4.0 V
𝑅 = = 44.4 Ω [2]
90 × 10−3 A
𝑅𝑅 44.4 Ω ×4.91 × 10−8 m2
𝜌 = = = 1.1 × 10−6 Ω m [2]
𝑙 2.00 m

c) A negligible temperature coefficient of resistivity means that the resistivity, and therefore the
resistance, changes very little with temperature (over the range of temperatures being
considered). [2]
[Total 10 Marks]

© Graham George & Mike Benn 2015


10 Resistance and resistivity Exam practice questions

9
a)

(Remember: you should put the relevant data on the graph. The current will be 0.42 A when
the p.d. is 12 V if the lamp is rated at 12 V, 5 W.) [3]
b) Rearranging 𝑃 = 𝑉 2 /𝑅:
𝑉2 (12 V)2
𝑅= = = 29 Ω [2]
𝑃 5W

c) When the lamp is ‘off’ it is at a much lower temperature than when it is ‘on’ and glowing
white hot. At a lower temperature, the lattice ions vibrate much less and therefore impede
the flow of electron charge carriers much less. The drift velocity of the electrons is therefore
much greater. [3]
This means that in the equation I = nAvq, v is much greater whilst n, A and q remain the same.
The current is therefore much greater, which means the resistance is much less. [2]
[Total 10 Marks]

𝜌𝜌 𝜌𝜌 49 × 10-8 Ω m × 1.0 m −8 2
10 a) R = ⇒A= = = 7.79 × 10 m [2]
𝐴 𝑅 6.29 Ω

𝜋𝑑 2 4𝐴 4 × 7.79 ×10−8 m2
A= ⇒d=� =� −4
= 3.15 × 10 m = 0.315 mm [2]
4 𝜋 π

b) i) A systematic error would be caused if the Vernier had a zero error. Before taking any
measurements this should be checked.
Random errors could be the result of the wire not being uniform along its length, so
measurements for the diameter should be taken at different points along the length of
the wire. Also, the wire may not be uniformly circular, so two measurements should be
taken at right angles to each other at each point along the wire. [4]
(Note that the question says ‘Explain’, so you need to explain why the measurements
should be taken in this way, not just how they would be taken.)
0.01 mm
ii) % uncertainty in diameter = × 100% = 3% [1]
0.315 mm
𝑅 −1 R 2.2 Ω
c) = 6.29 Ω m ⇒ l = = = 0.350 m = 35 cm [3]
𝑙 6.29 Ωm-1 6.29 Ω m-1
2
d) Tolerance in cutting wire = 2% of 35 cm = × 35 cm = 0.7 cm = 7 mm [2]
100

[Total 14 Marks]

© Graham George & Mike Benn 2015


10 Resistance and resistivity Exam practice questions

11 a) i) From the graph, when 𝑉 = 1.0 V, 𝐼 = 20 mA:


𝑉 1.0 V
𝑅 = = = 50 Ω [3]
𝐼 20 × 10−3 A

ii) From the graph, when 𝑉 = 3.0 V, I = 100 mA:


𝑉 3.0 V
𝑅 = = = 30 Ω [2]
𝐼 100 × 10−3 A

b) 𝑃 = 𝑉𝑉 = 1.0 V × 20 × 10−3 A = 20 mW [2]


𝑃 = 𝑉𝑉 = 3.0 V × 100 × 10−3 A = 300 mW [1]
c) i) The above answers suggest that as energy is being converted at a much greater rate at
3.0 V, then the temperature of the thermistor will be greater at 3.0 V than at 1.0 V. [2]
ii) A thermistor is a semiconductor. In semiconductors the number of charge carriers
increases exponentially with temperature. This means that in the equation I = nAvq, n
increases significantly with temperature whilst the quantities A and q remain the same.
Although v is slightly reduced due to increased lattice vibrations, this is nowhere near as
significant as the increase in n. The overall effect is that the current increases, and
therefore the resistance decreases, as the temperature rises. [5]
[Total 15 Marks]

Stretch and challenge


−9
12 a) ‘Nano’ means 10 , which suggests that the magnitude of structures in nanotechnology is in
−9
the order of 10 m. [2]
b) Metals are, mostly, good electrical conductors and much better conductors than semi-
conductors. In general, the resistivity of metals increases with temperature (positive
temperature coefficient) whilst the resistivity of semi-conductors decreases with temperature
(negative temperature coefficient). There are exceptions to this depending on the
composition of some metal alloys and the doping of semi-conductors. [4]
c) The tensile strength of a material is the maximum stress (i.e. force per unit area of cross-
section) that a material can withstand when stretched along its length. [1]
The elastic modulus (Young modulus) for a material is defined as the ratio of tensile
stress/tensile strain, where tensile strain is the ratio of extension/original length. [1]
𝐹 6422 kg × 9.8 N kg-1 10 −2
d) Tensile strength = = = 6.26 × 10 N m = 63 GPa [2]
𝐴 1 × 10-6 m2

e) Tensile strain is the ratio of extension/original length (or reduction in length/original length if
the sample is under compression). [1]
Plastic deformation means that the sample will not return to its original shape or size when
the applied forces are removed. The sample will be permanently stretched. [1]
As CNTs have a long, hollow construction, they are liable to buckle under compression and so
they are not as strong under compression as they are under tension – think of how easy it is
to buckle a drinking straw by compressing it compared with how difficult is it to stretch it. [1]

© Graham George & Mike Benn 2015


10 Resistance and resistivity Exam practice questions

f) In graphite, the atoms of carbon have a hexagonal structure. The sheet in Figure 14.20 in your
textbook is 15 hexagons wide. Each graphite hexagon is about 0.2 nm across, so the width w
of the sheet is about 15 × 0.2 nm = 3 nm. [2]
When the sheet is rolled into a cylinder, w = πd and so d = w/π = 3 nm/π = 0.95 nm.
We can therefore say that the diameter is about 1 nm. [2]
(If you had assumed anything between 0.1 nm and 1 nm for the dimension of the hexagons,
this would be a reasonable estimate and get full credit.)
g) It is not possible to use the formula I = nAvq because the nanoscale cross-section means that
the transport of electrons involves quantum effects. [2]
ℎ Js J C-1 V
h) As units of h = J s and units of e = C ⇒ units for = = = =Ω [3]
4𝑒 2 C2 Cs-1 A

ℎ 6.63 × 10-34 J s
i) R min = = 2 = 6.5 kΩ [2]
4𝑒 2
4 × �1.6 × 10-19 C�

[Total 24 Marks]

© Graham George & Mike Benn 2015

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