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T FET N - BF245A-B-C - 2 - Philips PDF
T FET N - BF245A-B-C - 2 - Philips PDF
DATA SHEET
FEATURES PINNING
• Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION
• Frequencies up to 700 MHz. 1 d drain
2 s source
APPLICATIONS 3 g gate
• LF, HF and DC amplifiers.
DESCRIPTION
1
handbook, halfpage 2
General purpose N-channel symmetrical junction 3 d
field-effect transistors in a plastic TO-92 variant package. g
s
MAM257
CAUTION
The device is supplied in an antistatic package. The
Fig.1 Simplified outline (TO-92 variant)
gate-source input must be protected against static
and symbol.
discharge during transport or handling.
1996 Jul 30 2
Philips Semiconductors Product specification
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage − ±30 V
VGDO gate-drain voltage open source − −30 V
VGSO gate-source voltage open drain − −30 V
ID drain current − 25 mA
IG gate current − 10 mA
Ptot total power dissipation up to Tamb = 75 °C; − 300 mW
up to Tamb = 90 °C; note 1 − 300 mW
Tstg storage temperature −65 +150 °C
Tj operating junction temperature − 150 °C
Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm × 10 mm.
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
Note
1. Measured under pulse conditions: tp = 300 µs; δ ≤ 0.02.
1996 Jul 30 3
Philips Semiconductors Product specification
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; unless otherwise specified.
MGE785 MGE789
−10 6
handbook, halfpage
handbook, halfpage ID
IGSS
(mA)
(nA) 5
−1
4
typ
−10−1 3
2
−10−2
1
−10−3 0
0 50 100 150 −4 −2 VGS (V) 0
Tj (°C)
Fig.2 Gate leakage current as a function of Fig.3 Transfer characteristics for BF245A;
junction temperature; typical values. typical values.
1996 Jul 30 4
Philips Semiconductors Product specification
MBH555 MGE787
6 15
handbook, halfpage handbook, halfpage
ID
(mA) ID
5
(mA)
VGS = 0 V
4 10
−0.5 V
2 5
1 −1 V
−1.5 V
0 0
0 10 VDS (V) 20 −4 −2 VGS (V) 0
Fig.4 Output characteristics for BF245A; Fig.5 Transfer characteristics for BF245B;
typical values. typical values.
MBH553 MGE788
15 30
handbook, halfpage handbook, halfpage
ID ID
(mA) (mA)
VGS = 0 V
10 20
−0.5 V
−1 V
5 10
−1.5 V
−2 V
−2.5 V
0 0
0 10 VDS (V) 20 −10 −5 VGS (V) 0
Fig.6 Output characteristics for BF245B; Fig.7 Transfer characteristics for BF245C;
typical values. typical values.
1996 Jul 30 5
Philips Semiconductors Product specification
MBH554 MGE775
30 4
handbook, halfpage handbook, halfpage
ID
ID
(mA)
(mA)
3
VGS = 0 V
20
VGS = 0 V
2 −0.5 V
−1 V
10
−2 V
1 −1 V
−3 V
−1.5 V
−4 V
0 0
0 10 VDS (V) 20 0 50 100 150
Tj (°C)
Fig.8 Output characteristics for BF245C; Fig.9 Drain current as a function of junction
typical values. temperature; typical values for BF245A.
MGE776 MGE779
15 20
handbook, halfpage handbook, halfpage
ID
ID (mA)
(mA) 16
10 VGS = 0 V
12
VGS = 0 V
8
5 −2 V
−1 V
4
−2 V −4 V
0 0
0 50 100 150 0 50 100 Tj (°C) 150
Tj (°C)
VDS = 15 V. VDS = 15 V.
Fig.10 Drain current as a function of junction Fig.11 Drain current as a function of junction
temperature; typical values for BF245B. temperature; typical values for BF245C.
1996 Jul 30 6
Philips Semiconductors Product specification
MGE778 MGE780
103
handbook, halfpage
102 104
handbook, halfpage
10
brs
10 1 102 10−1
1 10−1 10 10−2
10 102 103 10 102 103
f (MHz) f (MHz)
MGE782 MGE783
10
gfs, halfpage
handbook,
103
handbook, halfpage
10
−bfs
gos bos
(mA/V)
8 (µA/V) (mA/V)
bos
102 1
6
gfs gos
4
10 10−1
2
−bfs
0 1 10−2
10 102 f (MHz) 103 10 102 103
f (MHz)
1996 Jul 30 7
Philips Semiconductors Product specification
MGE777 MGE781
6 1.5
handbook, halfpage handbook, halfpage
Cis
(pF) Crs
(pF)
4
typ
typ
1
0 0.5
0 −2 −4 −6 −8 −10 0 −2 −4 −6 −8 −10
VGS (V) VGS (V)
MGE791 MGE784
8 −10
handbook, halfpage handbook,
V halfpage
GSoff
|yfs|
at ID = 10 nA
(mA/V)
BF245C (V) −8
BF245B
6
BF245A
−6
−4
2 BF245C
−2
BF245B
BF245A
0 −0
0 5 10 15 20 0 10 20 30
ID (mA)
IDSS at VGS = 0 (mA)
Fig.18 Forward transfer admittance as a function of Fig.19 Gate-source cut-off voltage as a function of
drain current; typical values. drain current; typical values.
1996 Jul 30 8
Philips Semiconductors Product specification
MGE790 MGE786
103 3
handbook, halfpage
handbook, halfpage
RDSon
F
(kΩ)
(dB)
102
2
typ
10
1
BF245A
1
BF245B
BF245C
10−1 0
0 −1 −2 −3 −4 1 10 102 103
f (MHz)
VGS (V)
1996 Jul 30 9
Philips Semiconductors Product specification
PACKAGE OUTLINE
4.2 max
1.7 5.2 max 12.7 min
1.4
1 0.48
0.40
4.8 2
max 2.54
3
0.66
0.56
(1) MBC015 - 1
2.5 max
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
1996 Jul 30 10
Philips Semiconductors Product specification
DEFINITIONS
1996 Jul 30 11
This datasheet has been download from:
www.datasheetcatalog.com