2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor

January 2009

2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier

Features
• High Current Capability: IC = 17A. TO-264
• High Power Dissipation : 150watts. 1
• High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter
• High Voltage : VCEO=250V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SA1943/FJL4215.
• Thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO3P package, 2SC5242/FJA4313 : 130 watts
-- TO220 package, FJP5200 : 80 watts
-- TO220F package, FJPF5200 : 50 watts

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Symbol Parameter Ratings Units

BVCBO Collector-Base Voltage 250 V

BVCEO Collector-Emitter Voltage 250 V

BVEBO Emitter-Base Voltage 5 V

IC Collector Current(DC) 17 A

IB Base Current 1.5 A

PD Total Device Dissipation(TC=25°C) 150 W

Derate above 25°C 1.04 W/°C

TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* Ta=25°C unless otherwise noted

Symbol Parameter Max. Units

RθJC Thermal Resistance, Junction to Case 0.83 °C/W
* Device mounted on minimum pad size

hFE Classification
Classification R O
hFE1 55 ~ 110 80 ~ 160

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SC5200/FJL4315 Rev. C 1
 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
Electrical Characteristics* T =25°C unless otherwise noted
a

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collector-Base Breakdown Voltage IC=5mA, IE=0 250 V

BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ 250 V

BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V

ICBO Collector Cut-off Current VCB=230V, IE=0 5.0 µA

IEBO Emitter Cut-off Current VEB=5V, IC=0 5.0 µA

hFE1 DC Current Gain VCE=5V, IC=1A 55 160

hFE2 DC Current Gain VCE=5V, IC=7A 35 60

VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V

VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V

fT Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz

Cob Output Capacitance VCB=10V, f=1MHz 200 pF

* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%

Ordering Information
Part Number Marking Package Packing Method Remarks
2SC5200RTU C5200R TO-264 TUBE hFE1 R grade
2SC5200OTU C5200O TO-264 TUBE hFE1 O grade
FJL4315RTU J4315R TO-264 TUBE hFE1 R grade
FJL4315OTU J4315O TO-264 TUBE hFE1 O grade

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SC5200/FJL4315 Rev. C 2
 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
Typical Characteristics

16
IB=200mA
IB = 180mA
14 Vce=5V
IB = 160mA
IC[A], COLLECTOR CURRENT

o
Tj=125 C o
Tj=25 C
IB = 140mA
12

hFE, DC CURRENT GAIN

IB = 120mA 100

10 IB = 100mA

IB = 80mA o
Tj=-25 C
8
IB = 60mA
6
10
IB = 40mA
4

IB = 0
0
0 2 4 6 8 10 12 14 16 18 20 1
1 10
VCE[V], COLLECTOR-EMITTER VOLTAGE Ic[A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain ( R grade )

10000
Vce(sat)[mV], SATURATION VOLTAGE

o o Ic=10Ib
Tj=125 C Tj=25 C Vce=5V

1000
hFE, DC CURRENT GAIN

100
o
Tj=-25 C
o
Tj=25 C
o
Tj=125 C
100

10 o
Tj=-25 C
10

1
1 0.1 1 10
1 10
Ic[A], COLLECTOR CURRENT
Ic[A], COLLECTOR CURRENT

Figure 3. DC current Gain ( O grade ) Figure 4. Collector-Emitter Saturation Voltage

10000
12
Vbe(sat)[mV], SATURATION VOLTAGE

VCE = 5V Ic=10Ib

10
IC[A], COLLECTOR CURRENT

o o
Tj=-25 C Tj=25 C
6 1000

4 o
Tj=125 C

0 100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10

Ic[A], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage Figure 6. Base-Emitter Saturation Voltage

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SC5200/FJL4315 Rev. C 3
 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
Typical Characteristics

1.0 100
Transient Thermal Resistance, Rthjc[ C / W]

0.9 IC MAX. (Pulsed*)

o

IC [A], COLLECTOR CURRENT

0.8 10ms*
10
0.7 IC MAX. (DC) 100ms*
0.6
DC
0.5
1
0.4

0.3

0.2 0.1

*SINGLE NONREPETITIVE
0.1
o
PULSE TC=25[ C]
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 0.01
1 10 100

Pulse duration [sec]

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 7. Power Derating Figure 8. Safe Operating Area

160

140
PC[W], POWER DISSIPATION

120

100

80

60

40

20

0
0 25 50 75 100 125 150 175

o
TC[ C], CASE TEMPERATURE

Figure 9. Power Derating

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SC5200/FJL4315 Rev. C 4
 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
Package Dimensions

TO-264

20.00 ±0.20

6.00 ±0.20
(4.00)
(2.00)
(8.30) (8.30)
(1.00)
(9.00)
(9.00)

(0.50)
(11.00)

(R

ø3.3
2
.00

20.00 ±0.20
0
)

±0.2

(R1
.00
0
1.50 ±0.20

)
(2.00)

(7.00) (7.00)

4.90 ±0.20
2.50 ±0.10

(1.50)
(1.50) (1.50)
20.00 ±0.50

2.50 ±0.20 3.00 ±0.20

+0.25
1.00 –0.10

+0.25
5.45TYP 5.45TYP 0.60 –0.10 2.80 ±0.30
[5.45 ±0.30] [5.45 ±0.30]
5.00 ±0.20
3.50 ±0.20

(0.15)
(2.80)
(1.50)

Dimensions in Millimeters

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SC5200/FJL4315 Rev. C 5
 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

2SC5200/FJL4315 Rev. C 6
This datasheet has been downloaded from:

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