metals

Article
Theoretical Study of Electromagnetic Interference
Shielding of 2D MXenes Films
Zhenyu Li 1,2 , Zeyu Wang 1 , Weixin Lu 1,2, * and Bo Hou 1,2, *
1 Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology,
College of Physics, Soochow University, Suzhou 215006, China; 20164208024@stu.suda.edu.cn (Z.L.);
wangzeyu16suda@163.com (Z.W.)
2 Key Laboratory of Modern Optical Technologies of Ministry of Education & Key Lab of Advanced Optical
Manufacturing Technologies of Jiangsu Province, Suzhou 215006, China
* Correspondence: luweixin@suda.edu.cn (W.L.); houbo@suda.edu.cn (B.H.)




Received: 9 July 2018; Accepted: 13 August 2018; Published: 20 August 2018


Abstract: The advance of research on 2D transition metal carbides, carbonitrides, and nitrides
(collectively known as MXenes) has progressed rapidly since the introduction of Ti3 C2 in 2011.
Nowadays the number of MXene synthesized in lab has reached more than 20, while there are
currently about 20 theoretically predicted structures. In this study, we calculate the electromagnetic
interference shielding effectiveness of a series of MXene films in theory and find that the results
are in good agreement with the measured data. From this, we can use this method to calculate
electromagnetic properties of all kinds of 2D material films which are similar to Mxenes.

Keywords: electromagnetic properties; theoretical calculation; 2D MXenes films

1. Introduction
Two-dimensional (2D) materials have unusual electronic, mechanical, and optical properties,
which have led to their extensive study in the past decade for diverse applications [1–6]. For example,
the first 2D material, graphene [7], has received a high level of attention. Currently, Mxenes, a family
of 2D material with good flexibility and high conductivity, have been comprehensively investigated,
which can provide electromagnetic interference shielding with minimal thickness [8]. Electromagnetic
interference (EMI) comes from electronic devices that transmit, distribute, or use electrical energy,
which has inferior impacts on device performance and the surrounding environment [9–12]. So it is
important to judge whether a material has a good electromagnetic shielding performance. An effective
EMI shielding material must meet two conditions: One is to reduce undesirable emissions and the
other one is to preserve the component from straying external signals. The reflection of radiation
for EMI shielding is the primary function by using charge carriers, which directly related to the
electromagnetic properties. As a result, the first factor of shielding materials is electrically conductive.
However, electrical conductivity is not the only element affecting the EMI shielding. Absorption of EM
radiation is the second element for EMI shielding, the principle of which is that the material’s electric
and magnetic dipoles interact with the radiation.
Different MXenes are expressed with chemical formula Mn+1 Xn Tx , where M is transition metal,
X is carbon and/or nitrogen, and T represents surface termination. Among them, Ti3 C2 Tx is the
most commonly studied MXene, because of its excellent electrical conductivity. In particular, the EMI
shielding capabilities of several Ti3 C2 Tx films and the polymer composites (Ti3 C2 Tx -SA) have been
experimentally examined at microwave frequencies and have been reported to be the highest synthetic
materials with comparable thickness [8]. In this study, we present a theoretical calculation for
conductive MXene films to shield microwave to understand the measurement reported in Ref. [8].

Metals 2018, 8, 652; doi:10.3390/met8080652 www.mdpi.com/journal/metals

Metals 2018, 8, 652 2 of 8

Note that the difference of result between experimental measurement and theoretical calculation is
very small.

2. Theoretical Calculation
The electromagnetic interference shielding effectiveness (EMI SE) is a way to measure a material’s
ability to block electromagnetic waves. When an electromagnetic radiation is incident on a shielding
device, the energy of the electromagnetic radiation will be reflected, absorbed, and transmitted.
The sum of the three components must be 1. The contributions of the total EMI SE (EMI SET ) are
derived from reflection, absorption and multiple internal reflections. The total SET can be written as:

SET = SER + SE A , (1)

where SER denotes the reflection contribution and SEA is the absorption contribution with multiple
internal reflections (SEM ) included implicitly. The two quantities can be expressed in terms of
reflectance (R) and transmittance (T) as:
 
1
SER = 10 log , (2)
1−R

1−R
 
SE A = 10 log (3)
T
Inserting Equations (2) and (3) into Equation (1), we can obtain the EMI SE:
 
1
SET = 10 log (4)
T

Transmission and reflection coefficients of a conductive thin film, schematically illustrated

in Figure 1, can be solved through matching boundary conditions and utilizing Fresnel formula,
as following:
E0 + Er = E+ + E− , (5)
E0 Er E+ E−
· cos θ0 − · cos θ0 = · cos θ1 − · cos θ1 , (6)
z0 z0 z1 z1
E+ ·eikh cos θ1 + E− ·e−ikh cos θ1 = Et ·eik0 h cos θ0 , (7)
E+ ikh cos θ1 E_ Et
·e · cos θ1 − ·e−ikh cos θ1 cos θ1 = ·eik0 h cos θ0 cos θ0 , (8)
z1 z1 z0
where z0 is the vacuum wave impedance, z1 is the impedance of the film, θ0 is the incident angle,
θ1 is the refracting angle in the film, k0 is the vacuum wave vector, k is the wave vector of the film,
h is the thickness of the film, E0 is the electric field of the incident wave, Er is the electric field of
the reflection wave, Et is the electric field of the transmission wave, E+ and E− are the electric fields
of electromagnetic wave inside the film, accounting for internal reflections. From Equations (5)–(8),
we obtain the obliquely-incident TE-wave (transverse electric wave) transmittance and reflectance of a
conductive thin film (nonmagnetic material) in vacuum:
 2
 Et ik h cos θ 2 
 
1 
T= e 0 0 =  , (9)
  
E0  cos δ1 − 0.5i (µ1 + 1

µ1 ) sin δ1 
 2
i (µ1 − µ1 ) sin δ1
 2  
 Er   1

R=  =
      , (10)
E0  2 cos δ1 − i µ1 + µ1 sin δ1 

1
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Metals 2018, 8, x FOR PEER REVIEW 3 of 8

√
q 2
where
where µ1 = =z1 cos θ0
z0 cos θ1 == √ cos θ0 ,, δδ 1 =
= √ ε ε r k 0 cos
h cos θ,1 ,cos
cosθ θ1= = 1 −1 − 1−cosεr
, θε0 ,=εr1 =
+ 1 +, and
iσ = ω/
ωε0 , and k 0 =
√εr cos θ1
c. In the above equations, ε is
ω/c. In the above equations, ε r the relative permittivity of the film, σ is the conductivity of the film,
is the relative permittivity of the film, σ is the conductivity of the film,
ω the
ω is angular
is the frequency,
angular and cand
frequency, is the
c isspeed
the of lightofin light
speed vacuum. The theoretical
in vacuum. model has
The theoretical considered
model has
theconsidered
factor of multiple
the factorinternal reflections,
of multiple internal soreflections,
the Equations (9) Equations
so the and (10) apply (9) andto the
(10)structure
apply to of
thethe
structure of the
film in Reference [8].film in Reference [8].

Figure
Figure1. Theoretical model
1. Theoretical model of of
obliquely-incident
obliquely-incident TE-wave
TE-wave ofofa conductive
a conductive thin
thinfilm in in
film vacuum.
vacuum.InIn
this
picture, E and H
this picture, represent
E and electric
H represent field field
electric and magnetic field,
and magnetic respectively,
field, θ0 isθ the
respectively, incident
is the angle,
incident θ1 is
angle,
theθrefracting angle inangle
is the refracting the film,
in theand h is
film, thehthickness
and of theof
is the thickness film.
the film.

Applying
Applying Equation
Equation (9)(9)
to to Equation
Equation (4)(4)
andand assuming
assuming thethe normal
normal incidenceofof
incidence plane
plane wave,we
wave, wecan
can obtain:
obtain: [13] [13]   
 11 2 2 
SET = = 2020loglog
 [((1
1+ exp(−ikh))−−(1(1−− n
+ n)) exp(− ) )exp(
exp(ikh
) )], , (11)(11)
4
 4n

where
wheren isn complex
is complexrefraction ofof
refraction the film
the andk kisisthe
filmand thecomplex
complexwave
wavevector
vector which with nn (k
which is related with (k =
= k + ik = nω/c). Then, Equation (11) can be divided explicitly into the following three
k1 + ik2 = nω/c). Then, Equation (11) can be divided explicitly into the following three terms:
1 2 terms:
= 20 log = 8.686 , (12)
SE A = 20k2 h log e = 8.686k2 h, (12)
= 20 log(|1 + | /4| |), (13)
SER = 20 log (|1 + n|2 /4|n|), (13)
 − exp (2 )(1 − ) 2/(1 + ) 2|.
SE M ==20 20 log|1 (14)
 
log1 − exp(2ikh)(1 − n) /(1 + n) . (14)
Specific to the conductive films, where the measuring frequency is very low (σ/(ω 0)≫1), we
Specific torelations
the conductive
of ≈ films,
/( where the measuring frequency is very low (σ/(ωε0 )  1), we can
can use two 0) and k1 = k2 to simplify Equations (12) and (13). Finally, we can
useobtain
two relations of
the approximateε r ≈ iσ/(ωε 0 )
expressions and k 1 = k2 to simplify Equations (12) and (13). Finally, we can
as following:
obtain the approximate expressions as following:
= 1.7 σ , (15)
p
SE A = 1.7h σ f , (15)
σ
= 50 + 10 log , (16)
σ
SER = 50 + 10 log , (16)
where h is the film thickness in the unit of centimeter, f is thef measuring frequency in the unit of MHz
and hσisisthe
where thefilm
electrical conductivity
thickness in the unitin of
thecentimeter,
unit of S/cm.
f is The
the measuring and SER is in
sum of SEA frequency thethe
widely-used
unit of MHz
Simon formalism (seeing Supplementary Text of Ref. [8]). As such, there are two differences between
and σ is the electrical conductivity in the unit of S/cm. The sum of SEA and SER is the widely-used
our theory and Simon formalism. First, the multiple internal reflection contribution, SEM, is omitted
Simon formalism (seeing Supplementary Text of Ref. [8]). As such, there are two differences between
in Simon formalism, but we consider it. Second, Simon formalism applies only to the normally-
our theory and Simon formalism. First, the multiple internal reflection contribution, SEM , is omitted in
incident case of plane wave, but our theory contains the incident angle, and can also be used to
Simon formalism, but we consider it. Second, Simon formalism applies only to the normally-incident
calculate the incident case of waveguide mode where the propagating constant of waveguide mode
case of plane wave, but our theory contains the incident angle, and can also be used to calculate the
gives rise to the incident angle.
incident case of waveguide mode where the propagating constant of waveguide mode gives rise to the
incident angle.
 Metals 2018, 8, 652 4 of 8
Metals 2018, 8, x FOR PEER REVIEW 4 of 8

Resultsand
Results andDiscussion
Discussion
TheMXenes
The MXeneswere were chemically
chemicallysynthesized
synthesizedand anddelaminated,
delaminated,and andtheytheywere
wereprepared
preparedinto into
freestandingfilms
freestanding films
viavia vacuum-assisted
vacuum-assisted filtration
filtration [8]. According
[8]. According to the reported
to the reported measurements
measurements in Ref.
in Ref.
[8], the [8], the shielding
shielding properties
properties of the of the MXenes
MXenes are characterized
are characterized withinwithin the TE10
the TE10 waveguide,
waveguide, as
as illustrated
illustrated schematically
schematically by bythe theinsetinset
in in Figure2a.2a.A Amicrowave
Figure microwavenetwork networkanalyzer
analyzer(Agilent
(Agilent
ENA5071C)was
ENA5071C) wasused
usedtotorecord
recordreflection
reflectionand andtransmission coefficients,r r(S11)
transmissioncoefficients, andt t(S21),
(S11)and (S21),ofofport
port11
andport
and port22which
whichwerewereconnected
connectedwith withtwotwoidentical
identicalcoax-to-waveguide
coax-to-waveguideadapters adapters(X-band,
(X-band,WR-90,
WR-90,
8.2–12.4GHz).
8.2–12.4 GHz).Before
Beforemeasuring
measuringthe thesample,
sample,the thetwo twoports
portsfor
forthe
thewaveguide
waveguidesystemsystemwerewerecalibrated
calibrated
withX-band
with X-bandstandards
standards(seeing
(seeingMaterials
Materialsand andMethods
MethodsofofRef. Ref.[8]).
[8]).Then,
Then,the theMXenes
MXenesand andcomposite
composite
sampleswith
samples withareas
areaslarger
largerthan
thanthe thecross-section
cross-sectionofofthe thewaveguide
waveguidewere wereloaded
loadedintointothe
themeasuring
measuring
system. The
system. The microwave
microwaveTE10 TE10mode,
mode, which
which was waslaunched from the
launched from WR-90
the adapter
WR-90 of port 1, of
adapter propagated
port 1,
toward the sample,
propagated toward and the transmission
the sample, and the and reflection and
transmission spectra were obtained.
reflection Finally,
spectra were the EM shielding
obtained. Finally,
canEM
the be shielding
calculatedcanfrombeEquation
calculated(4), fromwhere the transmittance
Equation (4), where the |t|2 .
T =transmittance T = |t|2.
InInour q cos
ourcalculation,
calculation, cosθθ0 isis defined
defined usingusing the the propagating
propagatingconstant
constantββofofthe theTE10
TE10mode
modeasas
cos
cosθθ0==β/β/k=0 =1 − 1 (π/ ) ⁄ ) ,/k
− (π/a 2 2 , where
where
0
a is the
a is broadside
the broadsidelength of theofrectangular
length waveguide.
the rectangular The
waveguide.
calculated results
The calculated are shown
results in Figure
are shown 2a,c,2a,c,
in Figure which which are are
seen to agree
seen to agreewell
wellwith
withthe
themeasured
measureddata datainin
Ref.
Ref.[8].
[8].The
Thedifference
differenceofof4545μm
µmthickthickTi Ti33CC2T
2 x xfilms
T films between
between theoretical
theoretical calculation
calculation (Figure
(Figure 2c)
2c)and
and
experimental measurement (Figure 2d) arises from the network analyzer,
experimental measurement (Figure 2d) arises from the network analyzer, because the dynamic range because the dynamic range
ofofthe
thenetwork
networkanalyzer
analyzerininexperiment
experimentisis80 80dB.
dB.

Figure2.2.(a)
Figure (a)Calculation
CalculationofofEMI
EMIshielding
shieldingeffectiveness
effectivenessofofthreethreeMXene
MXenefilmsfilmswith
withthickness
thicknessandand
conductivityadapted
conductivity adaptedfrom
fromRef.
Ref.[8].
[8].The
Theinsetinsetofoffigure
figure(a)
(a)isisthe
theschematic
schematicdrawing
drawingofofwaveguide
waveguide
measurement.(b)
measurement. (b)Experimental
Experimentalresults
resultsofofEMI EMIshielding
shieldingeffectiveness
effectivenessofofthree
threeMXene
MXenefilms
filmsgot
gotfrom
from
Ref.[8].
Ref. [8].Reprinted
Reprintedwith withpermission
permissionfromfromAAAS.AAAS.(c) (c)Calculation
CalculationofofEMI
EMIshielding
shieldingeffectiveness
effectivenessofof
TiTi3C
3C2xTfilms
2T x films with
with conductivity
conductivity and
and differentthickness
different thicknessadapted
adaptedfromfromRef.
Ref.[8].
[8].(d)
(d)Measurement
Measurementresults
results
of EMI shielding effectiveness
of EMI shielding effectiveness of Ti3Cof Ti C
3 2T T films with different thickness in Ref. [8]. Reprinted
2 x xfilms with different thickness in Ref. [8]. Reprinted with with
permissionfrom
permission fromAAAS.
AAAS.

In order to improve tensile strength while maintaining good conductivity, Reference [8]
fabricated and measured the conductive composite consisting of Ti3C2Tx and Sodium Alginate (SA, a
Metals 2018, 8, 652 5 of 8

Metals 2018, 8, x FOR PEER REVIEW 5 of 8

In order to improve tensile strength while maintaining good conductivity, Reference [8] fabricated
and measured the conductive
naturally occurring polymer). composite
In Figureconsisting
3, we display of Ti3the
C2 Tcalculation
x and Sodium of EMIAlginate (SA, effectiveness
shielding a naturally
occurring
of Ti3C2Txpolymer).
-SA composites In Figure 3, we display
with different Ti3C2Tx the calculation whose
concentrations, of EMIthickness
shielding andeffectiveness
conductivityof are
Tiadopted
C
3 2 T x -SA composites with different
from Reference [8]. It is seen that Ti C
3 the
2 T x concentrations, whose thickness
agreement at the case of high conductivity and conductivity
(i.e., the 90
are adopted
wt.% from Reference
concentration) is good,[8]. It is seen
whereas that the agreement
the agreement at the casesatofthe case ofconductivity
medium high conductivity
(e.g., the
(i.e., the 90 wt.% concentration)
concentrations of 30 wt.%~60 wt.%) is good, whereas the
is moderate. Noteagreement
that there atare
thenoticeable
cases of medium variationsconductivity
of electrical
(e.g., the concentrations
conductivity measuredoffor 30 the
wt.%~60 wt.%) isconcentrations,
intermediate moderate. Notewhich that there are noticeable
is plotted in Reference variations of
[8]. Taking
electrical conductivity
the uncertainty measured
of electrical for the intermediate
conductivity into account, concentrations,
the agreement which is plottedas
is improved, indepicted
Referenceby[8].the
Taking the uncertainty of electrical conductivity into account, the agreement
color ribbons in Figure 3. For the 10 wt.% case, the conductivity is at least three order of is improved, asmagnitude
depicted
bylower
the color
than ribbons in Figure 3.cases,
other concentration For thewhich10 wt.% case,
is likely duethe to conductivity
being aroundisthe at percolation
least three order of
threshold.
magnitude
Fitting theselower than other concentration
conductivities into a power-law cases, relation,
which is likely
σ ∝ ( due− to ) ,being
where around the percolation
v denotes the volume
s
threshold. Fitting these conductivities into a power-law relation,
concentration of the conducting filler, vc is the critical volume concentration at the σ ∝ ( v − v c ) , where v denotes the
percolation
volume concentration of the conducting
threshold and s is the exponent beyond the filler, v c is the critical volume concentration at
threshold [14], will find vc close to the 10 wt.% the percolation
threshold and s is the exponent beyond the threshold [14], will find vc close to the 10 wt.% concentration.
concentration. With such low conductivity, the description iσ of ε = 1 + is not applicable, and the
With such low conductivity, the description of εr = 1 + ωε is not applicable, and the real part of εr
of ε should
0
real part
should be changed muchbelarger
changedthanmuch
1. This larger than 1.aThis
is because largeisamount
becauseofa microscopic
large amountgaps/contacts
of microscopic
between the conducing fillers inside the composite around the percolation will lead towill
gaps/contacts between the conducing fillers inside the composite around the percolation lead to
a strong
a strong capacitive effect (i.e., polarization effect) and consequently a large
capacitive effect (i.e., polarization effect) and consequently a large real part of permittivity [15,16]. real part of permittivity
[15,16]. Therefore,
Therefore, for the
for the 10 wt.% 10 wt.% concentration,
concentration, real part ofreal part
εr has of εmodified
been has been to modified
be 5000 toto be match
best 5000 toourbest
match our calculation
calculation and the measurement. and the measurement.

Figure 3. (a) Calculation of EMI shielding effectiveness of Ti3 C2 Tx -SA composites with different
Figure 3. (a) Calculation
concentrations, whose thicknessof EMI andshielding effectiveness
conductivity of Ti3from
are adapted C2Tx-SA
Ref.composites
[8]. The colorwithribbons
different
concentrations, whose thickness and conductivity are adapted from Ref. [8]. The
account for the effect from the noticeable variations of conductivity measurement in Reference color ribbons account
[8].
(b)for the effect from
Experimental theofnoticeable
results variations
EMI shielding of conductivity
effectiveness of Ti3 C2measurement
Tx -SA composites in Reference [8]. (b)
with different
Experimental in
concentrations results of EMI
Reference [8]. shielding
Reprintedeffectiveness of Ti3Cfrom
with permission 2Tx-SAAAAS.
composites with different
(c) Calculation of
electromagnetic properties of Ti3 C2 Tx and 60 wt.% Ti3 C2 Tx -SA composites, which thickness andof
concentrations in Reference [8]. Reprinted with permission from AAAS. (c) Calculation
electromagnetic
conductivity properties
are adapted from of Ti3C2Tx [8].
Reference and(d)60Measurement
wt.% Ti3C2Tresults
x-SA composites, which properties
of electromagnetic thickness of
and
Ti3conductivity
C2 Tx and 60 are
wt.%adapted
Ti3 C2 Txfrom Reference [8].
-SA composites (d) Measurement
in Reference resultswith
[8]. Reprinted of electromagnetic
permission fromproperties
AAAS.
of Ti3C2Tx and 60 wt.% Ti3C2Tx-SA composites in Reference [8]. Reprinted with permission from
AAAS.
Metals 2018,
Metals 8, x652
2018, 8, FOR PEER REVIEW 66 of
of 88

In particular cases, where the thickness of the film is very small (nk0h ≪ 1 with the refractive
In particular cases, where the thickness of the film is very small (nk0 h  1 with the refractive
index = √√ ) and the measurement frequency is very low (σ/(ωε ) ≫ 1), we can use the two
index n = εr ) and the measurement frequency is very low (σ/(ωε0 )  1), we can use the two
approximation conditions, i.e., cos δ 1, sin δ cos θ , and σ/(ωε ), to simplify
approximation conditions, i.e., cos δ1 ≈ 1, sin δ1 ≈ nk0 h cos θ1 , and εr ≈ iσ/(ωε0 ), to simplify
Equations (9) and (10). Then, we can obtain the approximate expressions as following:
Equations (9) and (10). Then, we can obtain the approximate expressions as following:
1
= | | =  2, (17)
2 1 + /(2 1 cos θ ) 
T = |t| =   , (17)
1 + z0 /(2Rs cos θ0 ) 
− /(2 cos θ )
= | | =  2, (18)
2 1 +z0 //(2
− cosθθ0 )) 
(2Rs cos
R = |r | =   , (18)
1 + z0 /(2Rs cos θ0 ) 
In the above equations, Rs is the sheet resistance with the definition = 1⁄(σ ).
In the
We findabove
thatequations, Rs is the
the calculation sheetofresistance
results EMI shielding with the definition Rofs =
effectiveness 1/(σh
three ).
MXene films with
We find that the calculation results of EMI shielding effectiveness
Equations (11) and (12) are nearly same as Equations (9) and (10), when comparing Figure of three MXene films4awith
and
Equations
Figure 2a. (11)
Thisandis (12) are nearly
because the case same ofasthe Equations
three MXene (9) andfilms
(10), when comparing
is satisfied with Figures 2a and 4a.
the approximate
This is because
conditions. But the
withcase
theofincrease
the three ofMXene films isof
the thickness satisfied
Ti3C2Txwith the
films, we approximate
find that theconditions.
calculationBut with
results
the increase of the thickness
in Figure 4b and Figure 2c are very of Ti C T films,
3 2 different
x we
when the thickness is greater than 11.2 um. In case 4b
find that the calculation results in Figures 2c and of
are very
thick different
films, when the thickness
the aforementioned is greater condition,
approximate than 11.2 um. nk0hIn≪ case1, of is thick films,valid,
no longer the aforementioned
which can be
approximate
justified throughcondition,
comparing  film
nk0 hthe 1, is thickness
no longerand valid,thewhich can beOn
skin depth. justified
the otherthrough comparing
hand, in the opposite the
film where
case thickness the and
MXenethe films
skin depth. On the other
range nm-scaled hand, in
thickness, ourtheequations
oppositeare case where thefor
applicable MXene films
calculating
range
the nm-scaled
shielding thickness,For
effectiveness. ourexample,
equations are applicable
assuming the Ti3Cfor2Txcalculating
conductivity theis shielding effectiveness.
thickness-independent
For example,
down to 50 nm, assuming
Equation the(11)
Ti3 Cis2 Tused
x conductivity
to predict is thethickness-independent
shielding effectiveness down
andto 50calculated
the nm, Equation (11)
results
is used
are to predict
displayed the shielding
in Figure 4c, whicheffectiveness
shows the map andoftheEMI calculated results of
SE as a function arefrequency
displayed in thickness.
and Figure 4c,
which
It showsthat
is noticed the the
mapTiof3CEMI SE as
2Tx film a function
needs to onlyofbe frequency and thickness.
~50 nm thick to meet the It is
SEnoticed that the
requirement ofTi20
3 CdB.
2 Tx
film needs to only be ~50 nm thick to meet the SE requirement of 20 dB.

Figure 4. (a) Calculation

Calculation of EMI shielding
shielding effectiveness
effectiveness of of three MXene
MXene films by using approximate
expressions, Equations
Equations (17)
(17)and
and(18),
(18),where
wherethickness
thicknessand andconductivity
conductivityareare obtained
obtained from
from Reference
Reference [8].
[8]. (b) Calculation
(b) Calculation of shielding
of EMI EMI shielding effectiveness
effectiveness of Ti3 C2of
TxTi 3C2Twith
films x films with conductivity
conductivity and thickness
and different different
thickness obtained
obtained from from[8],
Reference Reference [8], whichbyisusing
which is completed completed by using
approximate approximate
expression, expression,
Equations (17) and
Equations
(18). (c) The(17) and (18).
calculated (c) map
color The of
calculated
EMI SE as color map ofofEMI
a function SE as and
frequency a function of frequency and
thickness.
thickness.
Since the superior EMI shielding of MXenes was reported, there are the intense investigations
Sincethe
towards thedirection
superior[17,18].
EMI shielding of MXenes
Most used the Simon was reported,tothere
formalism are their
explain the intense investigations
experimental results.
towards the direction [17,18]. Most used the Simon formalism to explain their
However, SE from the calculation based on Simon formalism consistently underestimates experimental results.
the
However, SE from the calculation based on Simon formalism consistently underestimates
experimental values due to neglecting the term of SEM in Equation (14), and is not rigorous to the
experimental
the waveguide values due to neglecting
measurement, the term of Our
as aforementioned. SEM formulas
in Equation
add(14), and is not rigorous
all contributing factors to
to the
the
waveguide measurement, as aforementioned. Our formulas add all contributing factors to the
shielding effectiveness, and give a more accurate prediction to the shielding measurement with the
waveguide system.
Metals 2018, 8, 652 7 of 8

shielding effectiveness, and give a more accurate prediction to the shielding measurement with the
waveguide system.

3. Conclusions
In conclusion, the electromagnetic properties of emerging 2D materials can be modeled and
calculated by the Fresnel formula of a generic conductive thin film. The comparison between the
calculation and the measurement is exampled with MXenes, and the excellent agreement is obtained.
Our work provides a theoretical way for the study of the electromagnetic properties of 2D material
films. Furthermore, our theory is based on the complete transmission/reflection expressions with the
effect of multiple internal reflection included natively, and is applicable to both normal and oblique
incidence of the electromagnetic wave, i.e., waveguide systems, which are the merits of this approach
in comparison with conventional Simon formalism.

Supplementary Materials: The following are available online at http://www.mdpi.com/2075-4701/8/8/652/s1,

Table S1. Physical parameters for Figures 2a and 4a in main text; Table S2. Physical parameters for Figures 2c and
4b in main text; Table S3. Physical parameters for Figure 3a in main text.
Author Contributions: Methodology, B.H. and W.L.; Validation, Z.L. and Z.W.; Formal Analysis, B.H. and Z.L.;
Writing-Original Draft Preparation, Z.L.; Writing-Reeview & Editing, B.H. and Z.L.
Funding: This research was funded by [Open Fund of the State Key Laboratory of Integrated Optoelectronics]
grant number [IOSKL2017KF05], [National Natural Science Foundation of China] grant number [No. 11474212],
[Natural Science Foundation of Jiangsu Province] grant number [No. BK20141191] and [Priority Academic
Program Development (PAPD) of Jiangsu Higher Education Institutions].
Conflicts of Interest: The authors declare no conflict of interest.

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