PROFET® BTS721L1

Smart Four Channel Highside Power Switch

Product Summary
Features Overvoltage Protection Vbb(AZ) 43 V
• Overload protection
• Current limitation Operating voltage Vbb(on) 5.0 ... 34 V
• Short-circuit protection active channels: one two parallel four parallel
• Thermal shutdown On-state resistance RON 100 50 25 mΩ
• Overvoltage protection Nominal load current IL(NOM) 2.9 4.3 6.3 A
(including load dump) Current limitation IL(SCr) 8 8 8 A
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection

Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.

Pin Definitions and Functions

Pin Symbol Function
1,10, Vbb Positive power supply voltage. Design the Pin configuration (top view)
11,12, wiring for the simultaneous max. short circuit
15,16, currents from channel 1 to 4 and also for low Vbb 1 • 20 Vbb
19,20 thermal resistance GND1/2 2 19 Vbb
3 IN1 Input 1 .. 4, activates channel 1 .. 4 in case of IN1 3 18 OUT1
5 IN2 logic high signal ST1/2 4 17 OUT2
7 IN3
IN2 5 16 Vbb
9 IN4
GND3/4 6 15 Vbb
18 OUT1 Output 1 .. 4, protected high-side power output
IN3 7 14 OUT3
17 OUT2 of channel 1 .. 4. Design the wiring for the
ST3/4 8 13 OUT4
14 OUT3 max. short circuit current
IN4 9 12 Vbb
13 OUT4
Vbb 10 11 Vbb
4 ST1/2 Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
8 ST3/4 Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
2 GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)
6 GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)

1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group 1 06.96
 BTS721L1
Block diagram
Four Channels; Open Load detection in on state;

+ V bb
Current
Leadframe
Voltage Overvoltage Gate 1
source protection limit 1 protection Channel 1

V Logic

Limit for OUT1 18

Voltage Level shifter
unclamped
sensor Rectifier 1 Temperature
ind. loads 1
sensor 1
3 IN1
Charge Open load
5 IN2 pump 1 Short to Vbb
ESD Logic
4 ST1/2
detection 1
Charge Gate 2
Current
pump 2 limit 2 protection Channel 2

Level shifter OUT2 17

Limit for
2 GND1/2 Rectifier 2 unclamped Load
ind. loads 2 Temperature
sensor 2
Open load R R
O1 O2
Signal GND Short to Vbb
GND1/2
Chip 1 detection 2
Chip 1 Load GND

+ V bb
Leadframe
Channel 3

OUT3 14
Logic and protection circuit of chip 2

(equivalent to chip 1)
7 IN3

9 IN4

8 ST3/4

Channel 4

OUT4 13
Load
6 GND3/4


PROFET R
O3
R
O4
Signal GND GND3/4
Chip 2 Chip 2 Load GND

Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20

Maximum Ratings at Tj = 25°C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection Vbb 34 V
Tj,start = -40 ...+150°C

Semiconductor Group 2
 BTS721L1

Maximum Ratings at Tj = 25°C unless otherwise specified

Parameter Symbol Values Unit

Load current (Short-circuit current, see page 5) IL self-limited A

Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad dump4) 60 V
RI3) = 2 Ω, td = 200 ms; IN = low or high,
each channel loaded with RL = 4.7 Ω,
Operating temperature range Tj -40 ...+150 °C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC)5 Ta = 25°C: Ptot 3.7 W
(all channels active) Ta = 85°C: 1.9
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C5),
IL = 2.9 A, ZL = 58 mH, 0 Ω one channel: EAS 0.3 J
IL = 4.3 A, ZL = 58 mH, 0 Ω two parallel channels: 0.65
IL = 6.3 A, ZL = 58 mH, 0 Ω four parallel channels: 1.5
see diagrams on page 9 and page 10
Electrostatic discharge capability (ESD) VESD 1.0 kV
(Human Body Model)
Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC) IIN ±2.0 mA
Current through status pin (DC) IST ±5.0
see internal circuit diagram page 8

Thermal resistance
junction - soldering point5),6) each channel: Rthjs 15 K/W
junction - ambient5) one channel active: Rthja 41
all channels active: 34

2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input
protection is integrated.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
6) Soldering point: upper side of solder edge of device pin 15. See page 15
Semiconductor Group 3
 BTS721L1
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT)
IL = 2 A each channel, Tj = 25°C: RON -- 85 100 mΩ
Tj = 150°C: 170 200

two parallel channels, Tj = 25°C: 43 50

four parallel channels, Tj = 25°C: 22 25
Nominal load current one channel active: IL(NOM) 2.5 2.9 -- A
two parallel channels active: 3.8 4.3
four parallel channels active: 5.9 6.3
Device on PCB , Ta = 85°C, Tj ≤ 150°C
5)

Output current while GND disconnected or pulled IL(GNDhigh) -- -- 10 mA

up; Vbb = 30 V, VIN = 0, see diagram page 9
Turn-on time to 90% VOUT: ton 80 200 400 µs
Turn-off time to 10% VOUT: toff 80 200 400
RL = 12 Ω, Tj =-40...+150°C
Slew rate on dV/dton 0.1 -- 1 V/µs
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C:
Slew rate off -dV/dtoff 0.1 -- 1 V/µs
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C:

Operating Parameters
Operating voltage7) Tj =-40...+150°C: Vbb(on) 5.0 -- 34 V
Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 3.5 -- 5.0 V
Undervoltage restart Tj =-40...+25°C: Vbb(u rst) -- -- 5.0 V
Tj =+150°C: 7.0
Undervoltage restart of charge pump Vbb(ucp) -- 5.6 7.0 V
see diagram page 14 Tj =-40...+150°C:
Undervoltage hysteresis ∆Vbb(under) -- 0.2 -- V
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 34 -- 43 V
Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 33 -- -- V
Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) -- 0.5 -- V
Overvoltage protection 8) Tj =-40...+150°C: Vbb(AZ) 42 47 -- V
I bb = 40 mA

7) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
8) see also VON(CL) in circuit diagram on page 8.
Semiconductor Group 4
 BTS721L1
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Standby current, all channels off Tj =25°C: Ibb(off) -- 28 60 µA
VIN = 0 Tj =150°C: -- 44 70
Leakage output current (included in Ibb(off)) IL(off) -- -- 12 µA
VIN = 0
Operating current 9), VIN = 5V, Tj =-40...+150°C
IGND = IGND1/2 + IGND3/4, one channel on: IGND -- 2 3 mA
four channels on: -- 8 12

Protection Functions
Initial peak short circuit current limit, (see timing
diagrams, page 12)
each channel, Tj =-40°C: IL(SCp) 11 18 25 A
Tj =25°C: 9 14 22
Tj =+150°C: 5 8 14
two parallel channels twice the current of one channel
four parallel channels four times the current of one channel
Repetitive short circuit current limit,
Tj = Tjt each channel IL(SCr) -- 8 -- A
two parallel channels -- 8 --
four parallel channels -- 8 --
(see timing diagrams, page 12)
Initial short circuit shutdown time Tj,start =-40°C: toff(SC) -- 3.8 -- ms
Tj,start = 25°C: -- 3 --
(see page 11 and timing diagrams on page 12)
Output clamp (inductive load switch off)10) VON(CL) -- 47 -- V
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis ∆Tjt -- 10 -- K

Reverse Battery
Reverse battery voltage 11) -Vbb -- -- 32 V
Drain-source diode voltage (Vout > Vbb) -VON -- 610 -- mV
IL = - 2.9 A, Tj = +150°C

9) Add IST, if IST > 0

10) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
11) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
Semiconductor Group 5
 BTS721L1
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Diagnostic Characteristics
Open load detection current, (on-condition)
each channel, Tj = -40°C: I L (OL) 20
1
-- 400 mA
Tj = 25°C: 20 -- 300
Tj = 150°C: 20 -- 300
two parallel channels twice the current of one channel
four parallel channels four times the current of one channel
Open load detection voltage 12 ) Tj =-40..+150°C: VOUT(OL) 2 3 4 V
Internal output pull down
(OUT to GND), VOUT = 5 V Tj =-40..+150°C: RO 4 10 30 kΩ

Input and Status Feedback13)

Input resistance RI 2.5 3.5 6 kΩ
(see circuit page 8) Tj =-40..+150°C:
Input turn-on threshold voltage VIN(T+) 1.7 -- 3.5 V
Tj =-40..+150°C:
Input turn-off threshold voltage VIN(T-) 1.5 -- -- V
Tj =-40..+150°C:
Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V
Off state input current VIN = 0.4 V: IIN(off) 1 -- 50 µA
Tj =-40..+150°C:
On state input current VIN = 5 V: IIN(on) 20 50 90 µA
Tj =-40..+150°C:
Delay time for status with open load after switch td(ST OL4) 100 320 800 µs
off (other channel in off state)
(see timing diagrams, page 13), Tj =-40..+150°C:
Delay time for status with open load after switch td(ST OL5) -- 5 20 µs
off (other channel in on state)
(see timing diagrams, page 13), Tj =-40..+150°C:
Status invalid after positive input slope td(ST) -- 200 600 µs
(open load) Tj =-40..+150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) 5.4 6.1 -- V
ST low voltage Tj =-40...+25°C, IST = +1.6 mA: VST(low) -- -- 0.4
Tj = +150°C, IST = +1.6 mA: -- -- 0.6

12) External pull up resistor required for open load detection in off state.
13) If ground resistors RGND are used, add the voltage drop across these resistors.

Semiconductor Group 6
 BTS721L1

Truth Table
Channel 1 and 2 Chip 1 IN1 IN2 OUT1 OUT2 ST1/2
Channel 3 and 4 Chip 2 IN3 IN4 OUT3 OUT4 ST3/4
(equivalent to channel 1 and 2)
BTS 721L1
Normal operation L L L L H
L H L H H
H L H L H
H H H H H
Open load Channel 1 (3) L L Z L H(L14))
L H Z H H
H X H X L
Channel 2 (4) L L L Z H(L14))
H L H Z H
X H X H L
Short circuit to Vbb Channel 1 (3) L L H L L15)
L H H H H
H X H X H(L16))
Channel 2 (4) L L L H L15)
H L H H H
X H X H H(L16))
Overtemperature both channel L L L L H
X H L L L
H X L L L
Channel 1 (3) L X L X H
H X L X L
Channel 2 (4) X L X L H
X H X L L
Undervoltage/ Overvoltage X X L L H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams

Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.

Terms

Ibb
V VON3
V Leadframe ON1 Leadframe
bb V V
I IN1 ON2 I IN3 ON4
Vbb Vbb
3 I L1 7 I L3
IN1 18 IN3 14
I IN2 OUT1 I IN4 OUT3
5 9
IN2 PROFET IN4 PROFET
Chip 1 I L2 Chip 2 I L4
I ST1/2 17 I ST3/4 13
OUT2 OUT4
4 8
V ST1/2 GND1/2 V ST3/4 GND3/4
IN1 VIN2 VST1/2 V IN3 VIN4 VST3/4 V
OUT1 OUT3
2 6
I VOUT2 IGND3/4 VOUT4
GND1/2
R R
GND1/2 GND3/4

Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20

External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 Ω or a single resistor RGND = 75 Ω for
reverse battery protection up to the max. operating voltage.

14) With additional external pull up resistor

15) An external short of output to Vbb in the off state causes an internal current from output to ground. If R GND is
used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
16) Low resistance to V may be detected by no-load-detection
bb
Semiconductor Group 7
 BTS721L1
Input circuit (ESD protection), IN1...4 Overvoltage protection of logic part
GND1/2 or GND3/4
R + V bb
I
IN

V
RI Z2
ESD-ZD I IN
I
I IN
Logic
GND
ST
R ST

V
ESD zener diodes are not to be used as voltage clamp at Z1

DC conditions. Operation in this mode may result in a drift of GND

the zener voltage (increase of up to 1 V).
R GND

Signal GND
Status output, ST1/2 or ST3/4
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ.,
+5V RGND = 150 Ω

R ST(ON)
ST Reverse battery protection
+ 5V - Vbb

ESD-
ZD
GND R ST
RI
IN
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 Ω OUT
ST
at 1.6 mA, ESD zener diodes are not to be used as voltage Power
clamp at DC conditions. Operation in this mode may result in Logic
Inverse
Diode
a drift of the zener voltage (increase of up to 1 V).
GND

RGND RL
Inductive and overvoltage output clamp,
OUT1...4 Signal GND Power GND

+Vbb
RGND = 150 Ω, RI = 3.5 kΩ typ,
Temperature protection is not active during inverse current
VZ
operation.

V ON

OUT

PROFET

Power GND

VON clamped to VON(CL) = 47 V typ.

Semiconductor Group 8
 BTS721L1
Open-load detection, OUT1...4 GND disconnect with GND pull up
ON-state diagnostic condition: (channel 1/2 or 3/4)
VON < RON·IL(OL); IN high

+ V bb Vbb
IN1
V OUT1
IN1
IN2 PROFET
V OUT2
IN2
VON ST
ON GND

OUT
Open load V V
Logic V ST GND
unit detection bb

Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.

OFF-state diagnostic condition:

VOUT > 3 V typ.; IN low Vbb disconnect with energized inductive
load

R Vbb
EXT
IN1
high OUT1
OFF IN2 PROFET

V OUT2
OUT
ST GND

Logic Open load

R
detection O
unit
V
bb

Signal GND
For an inductive load current up to the limit defined by EAS
(max. ratings see page 3 and diagram on page 10) each
switch is protected against loss of Vbb.
GND disconnect Consider at your PCB layout that in the case of Vbb dis-
(channel 1/2 or 3/4) connection with energized inductive load the whole load
current flows through the GND connection.

Ibb
V
bb
Vbb
IN1
OUT1
IN2 PROFET
OUT2
ST GND

V V V V
IN1 IN2 ST GND

Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).

Due to VGND > 0, no VST = low signal available.

Semiconductor Group 9
 BTS721L1
Inductive load switch-off energy
dissipation
E bb

E AS

ELoad
Vbb
IN

PROFET OUT
= L
ST EL
GND
ZL
{ ER
R
L

Energy stored in load inductance:

2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
IL· L IL·RL
EAS= (V + |VOUT(CL)|)
2·RL bb
ln (1+ |V )
OUT(CL)|

Maximum allowable load inductance for

a single switch off (one channel)5)
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω

L [mH]
10000

1000

100

10

1
1 2 3 4 5 6 7 8

IL [A]

Semiconductor Group 10
 BTS721L1
Typ. on-state resistance Typ. standby current
RON = f (Vbb,Tj ); IL = 2 A, IN = high Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1...4 = low

RON [mOhm] Ibb(off) [µA]

300 60

250 50

200 40
Tj = 150°C

150 30
85°C

100 25°C
20
-40°C

50
10

0
0
0 10 20 30 40
-50 0 50 100 150 200
Vbb [V] Tj [°C]

Typ. open load detection current Typ. initial short circuit shutdown time
IL(OL) = f (Vbb,Tj ); IN = high toff(SC) = f (Tj,start ); Vbb =12 V

IL(OL) [mA] toff(SC) [msec]

220 4

200 -40°C
3.5
180
no-load detection not specified

160 3
25°C
140 2.5
for V bb < 6 V

120
85°C 2
100
Tj = 150°C 1.5
80

60
1
40
0.5
20

0 0
0 5 10 15 20 25 30 -50 0 50 100 150 200
Vbb [V] Tj,start [°C]

Semiconductor Group 11
 BTS721L1
Timing diagrams
Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams
are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently
the diagrams are valid for each channel as well as for permuted channels
Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load
IN1
IN
IN2

t d(ST)
V bb ST

*)

V
OUT1 V
OUT

V
OUT2

I L
I L(OL)
ST open drain
t t

*) if the time constant of load is too large, open-load-status may

occur
Figure 2a: Switching a lamp:
Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling
IN
IN1 other channel: normal operation

ST

I
L1

V
OUT I
L(SCp)
I
L(SCr)

I
L

t
off(SC)
ST
t

t
The initial peak current should be limited by the lamp and not by
the initial short circuit current IL(SCp) = 14 A typ. of the device.
Heating up of the chip may require several milliseconds, depending
on external conditions (toff(SC) vs. Tj,start see page 11)

Semiconductor Group 12
 BTS721L1
Figure 3b: Turn on into short circuit: Figure 5a: Open load: detection in ON-state, open
shut down by overtemperature, restart by cooling load occurs in on-state
(two parallel switched channels 1 and 2)
IN1
IN1/2

IN2 channel 2: normal operation

I +I
L1 L2
I L(SCp)

VOUT1

I L(SCr)
I L1 channel 1:
open open
normal
load load
load
t
off(SC) t d(ST OL1)
ST1/2 t d(ST OL2) t d(ST OL1) t d(ST OL2)
ST
t t

td(ST OL1) = 30 µs typ., td(ST OL2) = 20 µs typ

Figure 4a: Overtemperature: Figure 5b: Open load: detection in ON-state, turn
Reset if Tj <Tjt on/off to open load

IN1
IN

IN2 channel 2: normal operation

ST

V
OUT1

V
OUT

I
L1
channel 1: open load
T
J
t t t
d(ST) d(ST OL4) d(ST)
t
d(ST OL5)
t ST
t

The status delay time td(STOL4) allows to distinguish between the

failure modes "open load in ON-state" and "overtemperature".

Semiconductor Group 13
 BTS721L1
Figure 5c: Open load: detection in ON- and OFF-state Figure 6b: Undervoltage restart of charge pump
(with REXT), turn on/off to open load

V on VON(CL)
IN1

IN2 channel 2: normal operation

off-state
V

on-state

off-state
OUT1
V
bb(over)

I L1 V
channel 1: open load V bb(o rst)
bb(u rst)

V
bb(u cp)

ST t t d(ST OL5) V bb(under)

t d(ST) d(ST)
V bb
t

td(ST OL5) depends on external circuitry because of high IN = high, normal load conditions.
impedance Charge pump starts at Vbb(ucp) = 5.6 V typ.

Figure 7a: Overvoltage:

Figure 6a: Undervoltage:

IN
IN

Vbb V ON(CL) Vbb(over) V bb(o rst)

V bb

V Vbb(u cp)
bb(under)
Vbb(u rst)

V
OUT

V OUT

ST
ST open drain
t
t

Semiconductor Group 14
 BTS721L1
Package and Ordering Code
Standard P-DSO-20-9 Ordering Code
BTS721L1 Q67060-S7002-A2

All dimensions in millimetres

1) Does not include plastic or metal protrusions of 0.15 max per side
2) Does not include dambar protrusion of 0.05 max per side

Definition of soldering point with temperature Ts:

upper side of solder edge of device pin 15.

Pin 15

Printed circuit board (FR4, 1.5mm thick, one layer

70µm, 6cm2 active heatsink area) as a reference for
max. power dissipation Ptot, nominal load current
IL(NOM) and thermal resistance Rthja

Semiconductor Group 15