RFG70N06, RFP70N06,

S E M I C O N D U C T O R RF1S70N06, RF1S70N06SM
70A, 60V, Avalanche Rated, N-Channel
December 1995 Enhancement-Mode Power MOSFETs

Features Packages
JEDEC STYLE TO-247
• 70A, 60V SOURCE
• rDS(on) = 0.014Ω DRAIN
GATE
• Temperature Compensated PSPICE Model DRAIN
(BOTTOM
• Peak Current vs Pulse Width Curve SIDE METAL)
• UIS Rating Curve (Single Pulse)
• +175oC Operating Temperature

Description
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM
are N-channel power MOSFETs manufactured using the MegaFET JEDEC TO-220AB
process. This process, which uses feature sizes approaching SOURCE
DRAIN
those of LSI circuits, gives optimum utilization of silicon, resulting GATE
DRAIN
in outstanding performance. They were designed for use in appli- (FLANGE)
cations such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER PACKAGE BRAND
RFG70N06 TO-247 RFG70N06
JEDEC TO-262AA
RFP70N06 TO-220AB RFP70N06 SOURCE
DRAIN
RF1S70N06 TO-262AA F1S70N06 DRAIN GATE
(FLANGE)
RF1S70N06SM TO-263AB F1S70N06 A

NOTE: When ordering use the entire part number. Add the suffix, 9A, to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.

Formerly developmental type TA49007.

Symbol D JEDEC TO-263AB

M A
A

DRAIN
G (FLANGE)
GATE
SOURCE
S

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified

RFG70N06, RFP70N06
RF1S70N06, RF1S70N06SM UNITS
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 60 V
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 70 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Refer to Peak Current Curve
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve
Power Dissipation
TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 W
Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC
oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ -55 to +175

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. File Number 3206.3
Copyright © Harris Corporation 1995
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 Specifications RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

Electrical Specifications TC = +25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 60 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2 - 4 V

Zero Gate Voltage Drain Current IDSS VDS = 60V, TC = +25oC - - 1 µA

VGS = 0V
TC = +150oC - - 50 µA

Gate-Source Leakage Current IGSS VGS = ±20V - - 100 nA

On Resistance rDS(ON) ID = 70A, VGS = 10V - - 0.014 Ω

Turn-On Time tON VDD = 30V, ID = 70A - - 125 ns

RL = 0.43Ω, VGS = +10V
Turn-On Delay Time tD(ON) RGS = 2.5Ω - 12 - ns

Rise Time tR - 50 - ns

Turn-Off Delay Time tD(OFF) - 40 - ns

Fall Time tF - 15 - ns

Turn-Off Time tOFF - - 125 ns

Total Gate Charge QG(TOT) VGS = 0V to 20V VDD = 48V, - 185 215 nC
ID = 70A,
Gate Charge at 10V QG(10) VGS = 0V to 10V RL = 0.68Ω - 100 115 nC

Threshold Gate Charge QG(TH) VGS = 0V to 2V - 5.5 6.5 nC

Input Capacitance CISS VDS = 25V, VGS = 0V - 3000 - pF

f = 1MHz
Output Capacitance COSS - 900 - pF

Reverse Transfer Capacitance CRSS - 300 - pF

o
Thermal Resistance Junction to Case RθJC - - 1.0 C/W
o
Thermal Resistance Junction to Ambient RθJA - - 80 C/W

Source-Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage VSD ISD = 70A - - 1.5 V

Reverse Recovery Time tRR ISD = 70A, dISD/dt = 100A/µs - - 125 ns

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 RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

Typical Performance Curves

TC = +25oC 2
500
1
ID, DRAIN CURRENT (A)

THERMAL RESPONSE
0.5

ZθJC, NORMALIZED
100
100µs
0.2
1ms 0.1 PDM
0.1
10 0.05
10ms
0.02 t1
OPERATION IN THIS 100ms 0.01 t2
AREA MAY BE VDSS DC NOTES:
LIMITED BY rDS(ON) SINGLE PULSE DUTY FACTOR: D = t1/t2
MAX = 60V
PEAK TJ = PDM x ZθJC + TC
1 0.01
1 10 100 10-5 10-4 10-3 10-2 10-1 100 101
VDS, DRAIN-TO-SOURCE VOLTAGE (V) t, RECTANGULAR PULSE DURATION (s)

FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE

80 TC = +25oC
1000
FOR TEMPERATURES
70 IDM, PEAK CURRENT CAPABILITY (A) ABOVE +25oC DERATE PEAK
CURRENT AS FOLLOWS:
ID, DRAIN CURRENT (A)

60
 175 – T 
I = I  C
50 25  ----------------------
150 
-

40

30 VGS = 10V

20
100 TRANSCONDUCTANCE
10 MAY LIMIT CURRENT
IN THIS REGION
0 50
25 50 75 100125 150 175 10-5 10-4 10-3 10-2 10-1 100 101
TC, CASE TEMPERATURE (oC) t, PULSE WIDTH (s)

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs FIGURE 4. PEAK CURRENT CAPABILITY

TEMPERATURE

PULSE DURATION = 250µs, TC = +25oC VDD = 15V

200 200
ID(ON), ON-STATE DRAIN CURRENT (A)

VGS = 10V PULSE TEST

VGS = 20V VGS = 8V VGS = 7V
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX -55oC +25oC
ID, DRAIN CURRENT (A)

160 160
+175oC

120 120
VGS = 6V
80 80

40 VGS = 5V 40
VGS = 4.5V

0 0
0 1.0 2.0 3.0 4.0 5.0 0 2.0 4.0 6.0 8.0 10.0
VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V)

FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS

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 RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

Typical Performance Curves (Continued)

PULSE DURATION = 250µs, VGS = 10V, ID = 70A VGS = VDS, ID = 250µA

2.5 2.0
rDS(ON), NORMALIZED ON RESISTANCE

VGS(TH), NORMALIZED GATE

2.0

THRESHOLD VOLTAGE
1.5

1.5

1.0
1.0

0.5 0.5

0.0 0.0
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC)

FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs

TEMPERATURE JUNCTION TEMPERATURE

ID = 250µA 1.2
BVDSS, NORMALIZED DRAIN-TO-SOURCE

2.0 POWER DISSIPATION MULTIPLIER

1.0
BREAKDOWN VOLTAGE

1.5
0.8

0.6
1.0

0.4
0.5
0.2

0.0 0.0
-80 -40 0 40 80 120 160 200 0 25 50 75 100 125 150 175
TJ , JUNCTION TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN-SOURCE BREAKDOWN FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERA-
VOLTAGE vs JUNCTION TEMPERATURE TURE DERATING CURVE

VGS = 0V, FREQUENCY (f) = 1MHz 60 10

5000
VGS , GATE-SOURCE VOLTAGE (V)
VDS , DRAIN-SOURCE VOLTAGE (V)

VDD = BVDSS VDD = BVDSS

4000 45 7.5
C, CAPACITANCE (pF)

CISS
3000
30 5.0
0.75 BVDSS
2000 0.50 BVDSS
0.25 BVDSS
15 2.5
COSS RL = 0.86Ω
1000 IG(REF) = 2.2mA
CRSS VGS = 10V
0 0
I I
0 G ( REF ) G ( REF )
0 5 10 15 20 25 20 --------------------- t, TIME (µs) 80 ---------------------
I I
VDS, DRAIN-TO-SOURCE VOLTAGE (V) G ( ACT ) G ( ACT )

FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260

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 RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

Typical Performance Curves (Continued)

300
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

IAS, AVALANCHE CURRENT (A)

If R ≠ 0
tAV = (L/R) ln [(IAS*R)/(1.3*RATED BVDSS-VDD) +1]

100
STARTING TJ = +25oC

STARTING TJ = +150oC

10
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)

FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING

REFER TO HARRIS APPLICATION NOTES AN9321 AND AN9322

Test Circuits and Waveforms

VDS
BVDSS

tP
L VDS
IAS
VARY tP TO OBTAIN VDD
+
REQUIRED PEAK IAS RG
VDD
VGS -
DUT

tP
0V IL
0.01Ω tAV

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

VDD tON tOFF

tD(ON) tD(OFF)
RL
tR tF
VDS
90% 90%
VDS

VGS
10% 10%

0V
90%
DUT
RGS
VGS 50% 50%
PULSE WIDTH
10%

FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

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 RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

Temperature Compensated PSPICE Model for the

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
.SUBCKT RFG70N06 2 1 3 ; rev 3/20/92
CA 12 8 5.56e-9
CB 15 14 5.30e-9 RLDRAIN
DPLCAP 5
CIN 6 8 2.63e-9
10 2
DBODY 7 5 DBDMOD DRAIN
LDRAIN
DBREAK 5 11 DBKMOD
RSCL2 RSCL1
DPLCAP 10 5 DPLCAPMOD DBREAK
+ 51
5
EBREAK 11 7 17 18 65.18 51 ESCL
EDS 14 8 5 8 1 50 DBODY
- 11
EGS 13 8 6 8 1 6 RDRAIN +
ESG 6 10 6 8 1 ESG 8 EBREAK 17
16
EVTO 20 6 18 8 1 + VTO 18
RLGATE - +
MOS2
-
EVTO 21
IT 8 17 1 GATE
1
9 20 +
18 - 6
MOS1
8
LDRAIN 2 5 1e-9 RGATE
LGATE RIN CIN
LGATE 1 9 3.10e-9 RLSOURCE
LSOURCE 3 7 1.82e-9 8 RSOURCE 7
3
MOS1 16 6 8 8 MOSMOD M = 0.99 SOURCE
MOS2 16 21 8 8 MOSMOD M = 0.01 LSOURCE
S1A S2A
12 15 RBREAK
13 14
RBREAK 17 18 RBKMOD 1 17 18
8 13
RDRAIN 50 16 RDSMOD 4.66e-3
S1B S2B RVTO
RLDRAIN 2 5 10
RGATE 9 20 1.21 13
CA CB 19
IT
RLGATE 1 9 31 + + 14
VBAT
RIN 6 8 1e9 6
EGS EDS 5 +
RSOURCE 8 7 RDSMOD 3.92e-3 8 8
- -
RLSOURCE 3 7 18.2
RVTO 18 19 RVTOMOD 1

S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD

VBAT 8 19 DC 1
VTO 21 6 0.605

.MODEL DBDMOD D (IS = 7.91e-12 RS = 3.87e-3 TRS1 = 2.71e-3 TRS2 = 2.50e-7 CJO = 4.84e-9 TT = 4.51e-8)
.MODEL DBKMOD D (RS = 3.9e-2 TRS1 =1.05e-4 TRS2 = 3.11e-5)
.MODEL DPLCAPMOD D (CJO = 4.8e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 3.46 KP = 47 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 8.46e-4 TC2 = -8.48e-7)
.MODEL RDSMOD RES (TC1 = 2.23e-3 TC2 = 6.56e-6)
.MODEL RVTOMOD RES (TC1 = -3.29e-3 TC2 = 3.49e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8.35 VOFF= -6.35)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.35 VOFF= -8.35)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 3.0)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.0 VOFF= -2.0)

.ENDS

NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.

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