DATASHEET

CD4069UBMS FN3321
CMOS Hex Inverter Rev 0.00
December 1992

Features Pinout
• High Voltage Types (20V Rating) CD4069UBMS
TOP VIEW
• Standardized Symmetrical Output Characteristics
• Medium Speed Operation: tPHL, tPLH = 30ns (typ) at
10V A 1 14 VDD

G=A 2 13 F
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1A at 18V Over Full Pack- B 3 12 L = F

age Temperature Range; 100nA at 18V and +25oC H=B 4 11 E

• Meets All Requirements of JEDEC Tentative Standard C 5 10 K = E
No. 13B, “Standard Specifications for Description of
I=C 6 9 D
‘B’ Series CMOS Devices”
VSS 7 8 J=D
Applications
• Logic Inversion
• Pulse Shaping
Functional Diagram
• Oscillators
• High-Input-Impedance Amplifiers 1 2
A G=A

Description
3 4
B H=B
CD4069UBMS types consist of six CMOS inverter circuits.
These devices are intended for all general-purpose inverter
applications where the medium-power TTL-drive and logic- 5 6
C I=C
level conversion capabilities of circuits such as the CD4009
and CD4049 Hex Inverter/Buffers are not required.
9 8
The CD4069UBMS is supplied in these 14 lead outline pack- D J=D
ages:

Braze Seal DIP H4H 11 10

E K=E
Frit Seal DIP H1B
VSS = 7
13 12
Ceramic Flatpack H3W F L=F
VDD = 14

Schematic Diagram
VDD
VDD

G=A
A G

1(3, 5, 9, 11, 13)

2(4, 6, 8, 10, 12)

VSS

FIGURE 1. SCHEMATIC DIAGRAM OF 1 OF 6 IDENTICAL INVERTERS

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Absolute Maximum Ratings Reliability Information

DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input  10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 1/32 Inch (1.59mm  0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . . ja jc
Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W
o
Maximum Package Power Dissipation (PD) at +125 C
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
GROUP A
PARAMETER SYMBOL CONDITIONS (NOTE 1) SUBGROUPS TEMPERATURE MIN MAX UNITS
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC - 0.5 A
oC A
2 +125 - 50
VDD = 18V, VIN = VDD or GND 3 -55oC - 0.5 A
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA
2 +125oC -1000 - nA
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
o
2 +125 C - 1000 nA
VDD = 18V 3 -55oC - 100 nA
oC,
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25 +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
oC
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25 0.53 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA
o
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25 C 3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA
oC
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25 - -3.5 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10A 1 +25oC -2.8 -0.7 V
o
P Threshold Voltage VPTH VSS = 0V, IDD = 10A 1 +25 C 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH > VOL < V
VDD = 20V, VIN = VDD or GND 7 +25 oC VDD/2 VDD/2

VDD = 18V, VIN = VDD or GND 8A +125oC

VDD = 3V, VIN = VDD or GND 8B -55oC
oC, +125oC, -55oC
Input Voltage Low VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25 - 1.0 V
(Note 2)
Input Voltage High VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 4.0 - V
(Note 2)
Input Voltage Low VIL VDD = 15V, VOH > 13.5V, 1, 2, 3 +25oC, +125oC, -55oC - 2.5 V
(Note 2) VOL < 1.5V
Input Voltage High VIH VDD = 15V, VOH > 13.5V, 1, 2, 3 +25oC, +125oC, -55oC 12.5 - V
(Note 2) VOL < 1.5V
NOTES: 1. All voltages referenced to device GND, 100% testing being 3. For accuracy, voltage is measured differentially to VDD. Limit
implemented. is 0.050V max.
2. Go/No Go test with limits applied to inputs.

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TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
GROUP A
PARAMETER SYMBOL CONDITIONS (NOTES 1, 2) SUBGROUPS TEMPERATURE MIN MAX UNITS
oC
Propagation Delay TPHL VDD = 5V, VIN = VDD or GND 9 +25 - 110 ns
TPLH oC,
10, 11 +125 -55oC - 149 ns
oC
Transition Time TTHL VDD = 5V, VIN = VDD or GND 9 +25 - 200 ns
TTLH
10, 11 +125oC, -55oC - 270 ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.25 A
+125oC - 7.5 A
VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.5 A
+125oC - 15 A
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC - 0.5 A
+125oC - 30 A
Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, - 50 mV
-55oC
Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, - 50 mV
-55oC
Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, 4.95 - V
-55oC
Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, 9.95 - V
-55oC
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA
-55oC 0.64 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 0.9 - mA
-55oC 1.6 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC 2.4 - mA
-55oC 4.2 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -0.36 mA
-55oC - -0.64 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -1.15 mA
-55oC - -2.0 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -0.9 mA
-55oC - -2.6 mA
Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -2.4 mA
-55oC - -4.2 mA
Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, - 2 V
-55oC
Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, 8 - V
-55oC
Propagation Delay TPHL VDD = 10V 1, 2, 3 +25oC - 60 ns
TPLH VDD = 15V 1, 2, 3 +25oC - 50 ns
Transition Time TTHL VDD = 10V 1, 2, 3 +25oC - 100 ns
TTLH VDD = 15V 1, 2, 3 +25oC - 80 ns

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TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Input Capacitance CIN Any Input 1, 2 +25oC - 15 pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on
initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS
Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 2.5 A
o
N Threshold Voltage VNTH VDD = 10V, ISS = -10A 1, 4 +25 C -2.8 -0.2 V
N Threshold Voltage VTN VDD = 10V, ISS = -10A 1, 4 +25oC - 1 V
Delta
P Threshold Voltage VTP VSS = 0V, IDD = 10A 1, 4 +25oC 0.2 2.8 V
oC
P Threshold Voltage VTP VSS = 0V, IDD = 10A 1, 4 +25 - 1 V
Delta
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH > VOL < V
VDD/2 VDD/2
VDD = 3V, VIN = VDD or GND
Propagation Delay Time TPHL VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x ns
TPLH +25oC
Limit
NOTES: 1. All voltages referenced to device GND. 3. See Table 2 for +25oC limit.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC

PARAMETER SYMBOL DELTA LIMIT

Supply Current - SSI IDD 0.1A
Output Current (Sink) IOL5  20% x Pre-Test Reading
Output Current (Source) IOH5A  20% x Pre-Test Reading

TABLE 6. APPLICABLE SUBGROUPS

MIL-STD-883
CONFORMANCE GROUP METHOD GROUP A SUBGROUPS READ AND RECORD
Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6 Sample 5005 1, 7, 9
Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.

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TABLE 7. TOTAL DOSE IRRADIATION

MIL-STD-883 TEST READ AND RECORD

CONFORMANCE GROUPS METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD
Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS

OSCILLATOR
FUNCTION OPEN GROUND VDD 9V  -0.5V 50kHz 25kHz
Static Burn-In 1 2, 4, 6, 8, 10, 12 1, 3, 5, 7, 9, 11, 14
(Note 1) 13
Static Burn-In 2 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11, 13,
(Note 1) 14
Dynamic Burn-In - 7 14 2, 4, 6, 8, 10, 12 1, 3, 5, 9, 11, 13
(Note 1)
Irradiation 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11, 13,
(Note 2) 14
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K  5%, VDD = 18V  0.5V
2. Each pin except VDD and GND will have a series resistor of 47K 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V  0.5V

Typical Performance Characteristics

AMBIENT TEMPERATURE (TA) = +25oC 17.5

15.0 SUPPLY VOLTAGE

SUPPLY VOLTAGE VI VO (VDD) = 15V
OUTPUT VOLTAGE (VO) (V)
OUTPUT VOLTAGE (VO) (V)

(VDD) = 15V
15.0 12.5 AMBIENT TEMPERATURE (TA)
= +125oC
10V
12.5 -55oC
10.0 o
10V -55 C
10.0 +125oC
7.5
7.5 5V
5V 5.0 -55oC
5.0
+125oC

2.5
2.5

0 2.5 5.0 7.5 10.0 12.5 15.0 0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0
INPUT VOLTAGE (VI) (V) INPUT VOLTAGE (VI) (V)
FIGURE 2. MINIMUM AND MAXIMUM VOLTAGE TRANSFER FIGURE 3. TYPICAL VOLTAGE TRANSFER CHARACTERIS-
CHARACTERISTICS TICS AS A FUNCTION OF TEMPERATURE

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FN3321 Rev 0.00 Page 5 of 8

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CD4069UBMS

Typical Performance Characteristics (Continued)

17.5 17.5
AMBIENT TEMPERATURE (TA) = +25oC
AMBIENT TEMPERATURE (TA) = +25oC

OUTPUT LOW (SINK) CURRENT (IOL) (mA)

15.0 15.0
SUPPLY VOLTAGE
(VDD) = 15V

SUPPLY CURRENT (IDD) (mA)

12.5 12.5 30 GATE-TO-SOURCE VOLTAGE (VGS) = 15V
OUTPUT VOLTAGE (VO) (V)

10V 25
10.0 ID 10.0

15V 20
7.5 7.5
15
5V 10V
5.0 5.0
10V 10

2.5 2.5 5
5V
5V
0
0 5 10 15
0 2.5 5.0 7.5 10.0 12.5 15.0 DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
INPUT VOLTAGE (VI) (V)
FIGURE 4. TYPICAL CURRENT AND VOLTAGE TRANSFER FIGURE 5. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS) CHARACTERISTICS

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

AMBIENT TEMPERATURE (TA) = +25oC -15 -10 -5 0
OUTPUT LOW (SINK) CURRENT (IOL) (mA)

0
AMBIENT TEMPERATURE (TA) = +25oC

OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5
15.0
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
12.5 -10

10.0 -15

10V -10V
7.5 -20

5.0 -25

-15V
2.5 -30
5V

0 5 10 15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

FIGURE 6. MINIMUM OUTPUT LOW (SINK) CURRENT FIGURE 7. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS CHARACTERISTICS

DRAIN-TO-SOURCE VOLTAGE (VDS) (V)

PROPAGATION DELAY TIME (tPLH, tPHL) (ns)

AMBIENT TEMPERATURE (TA) = +25oC

-15 -10 -5 0
0
AMBIENT TEMPERATURE (TA) = +25oC
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)

100
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
SUPPLY VOLTAGE (VDD) = 5V
80
-5

60
-10V 10V
-10
40

15V
-15V 20
-15

0 20 40 60 80 100
LOAD CAPACITANCE (CL) (pF)

FIGURE 8. MINIMUM OUTPUT HIGH (SOURCE) CURRENT FIGURE 9. TYPICAL PROPAGATION DELAY TIME vs LOAD
CHARACTERISTICS CAPACITANCE

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December 1992
CD4069UBMS

Typical Performance Characteristics (Continued)

AMBIENT TEMPERATURE (TA) = +25oC

PROPAGATION DELAY TIME (tPHL, tPLH) (ns)

AMBIENT TEMPERATURE (TA) = +25oC

TRANSITION TIME (tTHL, tTLH) (ns)

120

200
100

SUPPLY VOLTAGE (VDD) = 5V

80 150

60
100
10V
40
LOAD CAPACITANCE (CL) = 50pF
15V
50
20
15pF
0
0 5 10 15 20 0 20 40 60 80 100
SUPPLY VOLTAGE (VDD) (V) LOAD CAPACITANCE (CL) (pF)

FIGURE 10. TYPICAL PROPAGATION DELAY TIME vs SUPPLY FIGURE 11. TYPICAL TRANSITION TIME vs LOAD
VOLTAGE CAPACITANCE

105 8
6
AMBIENT TEMPERATURE (TA) = -40oC TO +125oC

NORMALIZED PROPAGATION DELAY TIME

POWER DISSIPATION PER INVERTER (W)

4 SUPPLY VOLTAGE (VDD) = 15V

2 5

104 8
6
4 4
(tPHL, tPLH)

103 8 3
10V
6
4
10V
2 2
5V
102
8 LOAD CAPACITANCE (CL) = 50pF
6 1
4 (11pF FIXTURE + 39pF EXT)
CL = 15pF (11pF FIXTURE +4pF EXT)
2 AMBIENT TEMPERATURE (TA) = +25oC
10
2 4 6 8 2 4 6 8 2 4 6 8 2 4 6 8 2 4 6 8 10 12 14 16
10 102 103 104 105
SUPPLY VOLTAGE (VDD) VOLTS
INPUT FREQUENCY (fI) (kHz)
FIGURE 12. TYPICAL DYNAMIC POWER DISSIPATION vs FIGURE 13. VARIATION OF NORMALIZED PROPAGATION DELAY
FREQUENCY TIME (tPHL AND tPLH) WITH SUPPLY VOLTAGE

VDD

1 14

2 13

3 12 tr tf
PULSE GEN. VDD
tr = tf = 20ns 4 11 90%
IN INPUT 50%
5 10 10%
0
6 9
tTHL tTLH
50 7 8 VDD
90%
OUT INVERTING 50%
OUTPUT 10% 0
CL = 50pF
200k
tPHL tPLH

FIGURE 14. DYNAMIC ELECTRICAL CHARACTERISTICS TEST CIRCUIT AND WAVEFORMS

FN3321 Rev 0.00 Page 7 of 8

December 1992
CD4069UBMS

1/3 CD4069
1/6 CD4069

IN OUT
RS RT CT

Rf  10 MEG FOR TYPICAL COMPONENT

VALUES AND CIRCUIT PERFORMANCE,
SEE APPLICATION NOTE AN-6466
FIGURE 15. HIGH-INPUT IMPEDANCE AMPLIFIER FIGURE 16. TYPICAL RC OSCILLATOR CIRCUIT

1/3 CD4069
RS
1/6 CD4069 IN OUT

FOR TYPICAL COMPONENT

VALUES AND CIRCUIT
Rf
Rf PERFORMANCE, SEE
APPLICATION NOTES:
AN-6086 AND AN-6539 UPPER SWITCHING POINT

RS RS + Rf VDD
XTAL VP 
Rf 2

CS CT LOWER SWITCHING POINT

Rf - RS VDD
VN 
Rf 2

Rf > RS
FIGURE 17. TYPICAL CRYSTAL OSCILLATOR CIRCUIT FIGURE 18. INPUT PULSE SHAPING CIRCUIT
(SCHMITT TRIGGER)

Chip Dimensions and Pad Layout

6 5 4 3

7 1
DIE SIZE:
48 X 48 (45 - 53)
(1.143 - 1.346)
14

8
13

9 10 11 12
Dimension in parenthesis are in millimeters and are derived
from the basic inch dimensions as indicated. Grid graduations
are in mils (10-3 inch).

METALLIZATION: Thickness: 11kÅ 14kÅ, AL.

PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches

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December 1992