APM1105NFP

N-Channel Enhancement Mode MOSFET

Features Pin Description

SD
• 100V/16A, G

RDS(ON)= 80mΩ(typ.) @ VGS= 10V

RDS(ON)= 130mΩ(typ.) @ VGS= 4.5V
• ESD Protected
Top View of TO-220-FP
• Reliable and Rugged
• Lead Free and Green Devices Available D

(RoHS Compliant)

Applications G

• Power Management in TV Inverter.

N-Channel MOSFET

Ordering and Marking Information

APM1105N Package Code

FP : TO-220-FP
Assembly Material Operating Junction Temperature Range
Handling Code C : -55 to 175 oC
Handling Code
Temperature Range TU : Tube
Assembly Material
Package Code G : Halogen and Lead Free Device

APM1105N FP : APM1105N XXXXX - Date Code

XXXXX

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

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Rev. A.1 - Feb., 2010
APM1105NFP

Absolute Maximum Ratings

Symbol Parameter Rating Unit

Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 100
V
VGSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 175 °C
TSTG Storage Temperature Range -55 to 175 °C
IS Diode Continuous Forward Current 5 A
TC =25°C 64
IDP 300µs Pulse Drain Current Tested A
TC =100°C 44
TC =25°C 16
ID Continuous Drain Current A
TC =100°C 11
TC =25°C 60
PD Maximum Power Dissipation W
TC =100°C 30
RθJC Thermal Resistance-Junction to Case 2.5 °C/W
RθJ A Thermal Resistance-Junction to Ambient 62.5 °C/W
EAS Avalanche Energy, Single Pulsed (L=0.3mH) 30 mJ

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

APM1105NFP
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 100 - - V
VDS=80V, V GS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
TJ =85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, I DS=250µA 1.5 2 2.5 V
I GSS Gate Leakage Current VGS=±16V, VDS=0V - - ±10 µA
VGS=10V, IDS=5A - 80 100
RDS(ON) a Drain-Source On-state Resistance mΩ
VGS=4.5V, I DS=2A - 130 170
Diode Characteristics
VSD a Diode Forward Voltage ISD =5A, V GS=0V 0.6 0.8 1.1 V
trr Reverse Recovery Time - 44 - ns
IDS=5A, dlSD /dt=100A/µs
Qrr Reverse Recovery Charge - 80 - nC

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Rev. A.1 - Feb., 2010
APM1105NFP

Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)

APM1105NFP
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Dynamic Characteristics b
Ciss Input Capacitance - 940 -
VGS=0V,
Coss Output Capacitance VDS=30V, - 80 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 50 -
td(ON) Turn-on Delay Time - 13 24
tr Turn-on Rise Time VDD=30V, RL=30Ω, - 10 19
IDS=1A, V GEN=10V, ns
td(OFF) Turn-off Delay Time RG=6Ω - 32 60
tf Turn-off Fall Time - 16 30
b
Gate Charge Characteristics
Qg Total Gate Charge - 21 -
VDS=50V, V GS=10V,
Qgs Gate-Source Charge - 4.9 - nC
IDS=5A
Q gd Gate-Drain Charge - 5.8 -
Note a : Pulse test ; pulse width≤300µ s, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.

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Rev. A.1 - Feb., 2010
APM1105NFP

Typical Operating Characteristics

Power Dissipation Drain Current

70 18

60
15

50

ID - Drain Current (A)

12
Ptot - Power (W)

40
9
30

6
20

3
10
o o
TC=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

300 2
Normalized Transient Thermal Resistance

100
1
Duty = 0.5

0.2
it
Lim

300µs
ID - Drain Current (A)

10
n)

0.1
s(o

1ms
Rd

10ms 0.05
100ms
1 1s 0.1 0.02
DC

0.01

0.1 Single Pulse

2
Mounted on 1in pad
O o
TC=25 C RθJA :62.5 C/W
0.01 0.01
0.01 0.1 1 10 100 500 1E-4 1E-3 0.01 0.1 1 10 100

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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APM1105NFP

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

20 220
VGS=6,7,8,9,10V
18 5.5V 200

RDS(ON) - On - Resistance (mΩ)

16 180 VGS=4.5V
ID - Drain Current (A)

14 160

12 5V 140

10 120

8 100 VGS=10V
4.5V
6 80

4 60
4V
2 40
3.5V
0 20
0 1 2 3 4 5 0 4 8 12 16 20

VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

200 1.6
IDS=5A IDS=250µA
180
1.4
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)

160
1.2
140
1.0
120
0.8
100

0.6
80

60 0.4

40 0.2
3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 175

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.1 - Feb., 2010
APM1105NFP

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

3.0 20
VGS = 10V
IDS = 5A
10
2.5
Normalized On Resistance

IS - Source Current (A)

o
2.0 Tj=150 C

1.5 o
Tj=25 C
1

1.0

0.5

o
RON@Tj=25 C: 80m Ω
0.0 0.1
-50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1400 10
Frequency=1MHz VDS=50V
9 IDS=5A
1200
8
VGS - Gate-source Voltage (V)

1000 Ciss 7
C - Capacitance (pF)

6
800
5
600
4

400 3

2
200
Coss 1
Crss
0 0
0 5 10 15 20 25 30 35 40 0 3 6 9 12 15 18 21

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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Rev. A.1 - Feb., 2010
APM1105NFP

Avalanche Test Circuit and Waveforms

VDS
L
VDSX(SUS)
tp
DUT
VDS

IAS
RG
VDD

VDD
tp IL
EAS
0.01Ω

tAV

Switching Time Test Circuit and Waveforms

VDS
RD

DUT VDS
90%
VGS
RG
VDD

tp
10%
VGS
td(on) tr td(off) tf

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Rev. A.1 - Feb., 2010
APM1105NFP

Package Information
TO-220-FP
E A
A1

d1
D
L1
L

b e c A2
b2

S TO-220FP
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 4.20 4.80 0.165 0.189
A1 2.60 3.20 0.102 0.126
A2 2.10 2.90 0.083 0.114
b 0.50 1.00 0.020 0.039
b2 0.90 1.90 0.035 0.075
c 0.30 0.80 0.012 0.031
D 8.10 9.10 0.319 0.358
d1 14.50 16.50 0.571 0.650
d2 12.10 12.90 0.476 0.508
E 9.70 10.70 0.382 0.421
e 2.54 BSC 0.100 BSC
L 13.00 14.50 0.512 0.570
L1 1.60 4.00 0.063 0.157
P 3.00 3.60 0.118 0.142

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APM1105NFP

Devices Per Unit

Package Type Unit Quantity

TO-220-FP Tube 50

Classification Profile

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Rev. A.1 - Feb., 2010
APM1105NFP

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
3 3
Package Volume mm Volume mm
Thickness <350 ≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
3 3 3
Package Volume mm Volume mm Volume mm
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

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Rev. A.1 - Feb., 2010
APM1105NFP

Customer Service

Anpec Electronics Corp.

Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

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