ESE - 2020 Mains Test Series: Electronics & Telecommunication Engineering

1 TEST CODE: 607
Hyderabad | Delhi | Pune | Bhubaneswar | Lucknow | Bengaluru | Chennai | Vijayawada | Vizag | Tirupati | Kukatpally| Kolkata | Ahmedabad | Kothapet
ESE - 2020 Mains Test Series

Electronics & Telecommunication Engineering
Test – 7 on Basic Electronics Engineering + Materials Science +
Network Theory (Paper – I)
Solutions
01. (a)
Sol: To draw the graph,
1. Replace all resistors, inductors and capacitors by line segments
2. Replace voltage source by short circuit and current source by an open
3. Assume directions of branch currents arbitrarily, and
4. Number all the nodes and branches.
The oriented graph is shown in fig.
(2)
` 2 3
(1) (3)
(4)
The complete incidence matrix (Aa) is written as

1 2 3 4
1 1 0 1 1 
2  1 1 0 
Aa =
0
3  0  1 1  1
The reduced incidence matrix A is obtained by eliminating the last row from matrix Aa.
 1 0  1 1
A=  
  1 1 0 0
ACE Engineering Academy Hyderabad | Delhi | Pune | Bhubaneswar | Lucknow | Bengaluru | Chennai | Vijayawada | Vizag | Tirupati | Kukatpally| Kolkata | Ahmedabad | Kothapet
: 2 : ESE 2020 Mains Test Series
 1  1
 
 1 0  1 1  0 1   3  1
AAT =   = 
  1 1 0 0  1 0    1 2 
 
1 0
3 1
The number of possible trees = |AAT| = =61=5
1 2
01. (b)
1 1 R
(Ls  R ) s  
Cs  Ls  R C L
Sol: Z(s) =  ………….. (i)
Ls  R 
1 LCs  RCs  1 s 2  R s  1
2
Cs L LC
1 3
The poles are at   j and zero is at 1.
2 2
s 1
Z(s) = H
 1 3  1 3
s   j  s   j 
 2 2  2 2 

s 1 s 1
=H =H 2
 1  3
2 2
s  s 1
 s     j 
 2   2 
When Z(j0) = 1,
(1)
1= H
(1)
H=1
s 1
Z(s) = 2 ……………… (ii)
s  s 1
Comparing Eq. (ii) with Eq. (i),
C=1
R
=1
L
1
=1
LC
Solving the above equations,
C=1F
L=1H
R=1
: 3 : Electronics & Telecommunication Engineering
01. (c)
Sol:
(i) Given data,
Resistivity of the metal,  = 1.54  10–5Ω-m
Number of conduction electrons, n = 5.8  1028/m3
Relaxation time,  = ?
ne 2  m m
  2  2
m ne ne 
9.11  10 31

 2
5.8  10 28  1.602  10 19  1.54  10 8
9.11  10 31 9.11  10 13
= = = 39.747  10–15 Sec.
5.8  1.602   1.54  10 18
2
22 .923
B 50
(ii) I C  IE   0.5mA  0.49 mA
1  1  50
I 0.5mA
IB  E   9.8A
1  51
VC = ICRC – 9 = 0.49mA  4.7K – 9V = –6.7V
VE = IBRB + VEB = 1.19V
VEC = 1.19 – (–6.7) = 7.89V
Pd = VEC . IC = 7.89V  0.49mA = 3.87mW
01. (d)
Sol:
(i) M = 2.8 A/m, m = 2.5 × 10–3
We know, M   m × H
2.8 = 2.5 × 10–3 × H
H = 1.12 × 103 A/m
Magnetic flux density

B  0 M  H  
= 4 × 10–7 × (2.8 + 1.12 × 103)
= 1.41 × 10–3 T
(ii) H = 1300 A/m, r = 1.006

We know, flux density B   0  r H 
= 4 × 10–7 × 1.006 × 1300
= 1.64 × 10–3 Wb/m2
(iii) N = 8.2 × 1028 atoms/m3
p = 3 × 10–30 A-m2
m = 2 × 10–4
 
Magnetization M  N p
= 8.2 × 1028 × 3 × 10–30 = 0.246 A/m
Also, M   m H
= 0.246 = 2 × 10–4 × H
H = 1.23 × 103 A/m
Magnetic flux density

B  0 M  H  
= 4 10–7 × (0.246 + 1.23 × 103)
= 1.55 × 10–3 T
01. (e)
Sol: The classical free electron theory is used to verify Ohm‟s law. In order to verify the same, consider
that the steady-state current density can be written from Eq. as
ne 2  r E
J= ………….. (1)
m
Similarly, the steady state conductivity is
ne 2  r
= …………….. (2)
m
Compare Eq. (1) and (2), one can write
J = E …………………. (3)
1
We know that the current density J = I/A, the conductivity  = , and the electric field intensity

V
E= , Therefore Eq. (3) is given by
d
I 1V

A  d
 d 
Or, V =  I ……………….. (4)
A
RA
We know that,  = and hence,
d
d
R= ……………… (5)
A
Substituting the above value in Eq. (4), we get
V=IR ……………… (6)
Equation (6) states the Ohm‟s law. It is clear from the above equation that Ohm‟s law is verified
employing classical free electron theory.
Classical Free Electron Theory:
Even though the classical free electron theory is the first theory developed to explain the electrical
conduction and thermal conduction of metals, it has many practical applications. The advantages
and disadvantages of the classical free electron theory are as follows.
Advantages:
1. It explains the electrical conductivity and thermal conductively of metals
2. It explains the Wiedemann-Franz law.
3. It verifies Ohm‟s law
4. It is used to explain the optical properties of metals
Limitations:
1. It fails to explain the electric specific heat and the specific heat capacity of metals
2. It fails to explain superconducting properties of metals
3. It fails to explain new phenomena like photo-electric effect, Compton effect, black-body
radiation etc
4. It fails to explain electrical conductivity of semiconductors or insulators
5. The classical free electron model predicts the incorrect temperature dependence of .
ne 2  r
According to the classical free electron theory,  = .
m
6. It fails to give a correct mathematical expression for thermal conductivity.
7. Ferromagnetism could not be explained by this theory.
8. Susceptibility has greater theoretical value than the experimental value.
02. (a)
Sol:
(i) (1) Given Gopt = 1019/cm3/s, p = 100ns, ND = 1015/cm3
Excess concentration of electrons is equal to holes
n = p = Gopt  p = 101910010–9 = 1012/cm3
 The steady state excess carrier concentration = 1012/cm3
n i2
Equilibrium concentration of holes P0 
n0
P0 
1.5  10  10 2
 2.25  10 5 / cm 3
10 15
Steady state concentration of minority carriers = P 0 + p = 2.25105+1012  1012/cm3
(2) Excess carriers delay after the excitation is removed as
t / 
p(t) =  p . e p
To calculate time taken to delay by 10% :
9 10
10 12.e  t / 10010  10 12 
100
10 7
 e 10 t   e t / 10  10
7
100
 t  10 n 10  = 0.23µs
7
(3) Time taken for the hole concentration to reach 10% higher than the thermal equilibrium
Generation rate (Gopt) = 1019/cm3/s
10% of P0 = Gopt  t
10
 2.25  10 5  10 19  t
100
2.25  10 4
 t 19
 2.25  10 15 s = 2.25fs
10
(ii) i = ni(µn + µp)q, ni  A0 T 3 / 2 .e  EGO / 2 KT
 
 i  q n   p  A0 T 3 / 2 .e  E G0 / 2 KT

 A.T 3 / 2 .e  EG 0 / 2 KT  A  q n   p  A 0 

n i   n A.T 3 / 2 .e  EG 0 / 2 KT 

n  i   n A   n T 3 / 2  n e  EG 0 / 2 KT 
n  i   n A  n T   G 0
3 E
2 2KT
1 d i 3 1  E
 0     G02
 i dT 2  T  2KT
 d i 
 
 i   3  E G0
dT 2T 2KT 2
Substituting T = 300K, EG0 = 1.21eV, K = 8.6210–5 eV/K
 d i 
 
 i  3

1.21
dT 2  300 2  0.02586  300
= 0.08298/K
= 8.298%/K
 Conductivity of an intrinsic Si increases by 8.3% per degree rise in temperature.
02. (b)
Sol: Bottom up Approach:
 Bottom up approach refers to the build up of a material from the bottom; atom by atom,
molecule by molecule or cluster by cluster.
 The colloidal dispersion is a good example of bottom up approach in the synthesis of nano
particles.
 This method is not a new concept. All the living beings in nature observe growth by this
approach only and also it has been in industrial use for over a century.
Eg: The production of salt and nitrate in chemical industry.
 Bottom up approach gives a better chance to obtain nano structures with less defects, more
homogeneous chemical composition.
 Bottom up methods can be divided into gas-phase and liquid-phase methods.
Gas-phase methods:
Plasma arcing and chemical vapour deposition
Liquid phase methods:

Sol-gel synthesis, molecular self-assembly
Chemical vapour deposition:
The material to be deposited is first heated to its gas form and then allowed to deposit as a solid on
a surface.
 The method is normally performed under vacuum.
 The deposition can be direct or through a chemical reaction so that the material deposited is
different from the one volatilized.
 This process is routinely used to make nanopowders of oxides and carbides of metals if carbon
or oxygen are present with the metal.
 The method can also be used to generate nanopowders of pure metals, although not so easily.
 Chemical vapour deposition is often used to deposit a material on a flat surface.
 When a surface is exposed to a chemical vapour, the first layer of atoms or molecules that
deposits on the surface can act as a template on which material can grow.
Properties:
 Nanomaterials have the structural features in between atoms and the bulk materials.
 While most micro structured materials have similar properties to the corresponding bulk
materials, the properties of materials with nanometer dimensions are significantly different
from those of atoms and bulk materials.
 This is mainly due to the nanometer size of the materials which render them:
(1) Large ratio of surface to volume
(2) High surface energy
(3 Less number of imperfections
Which do not exist in the corresponding bulk materials.
 Due to their small dimensions, nanomaterials have extremely large surface area to volume ratio,
resulting in more “surface” dependent material properties.
 This in turn may enhance or modify the properties of the bulk materials.
 For example, metallic nano particles can be used as very active catalysts.
 Chemical sensors from nanoparticles and nanowires enhance the sensitivity of equipments.
02. (c)
Sol: The currents in the coils are shown in fig 1. The corresponding flux due to current in each coil is
also drawn with the help of right-hand thumb rule.
1
5 I1 I2 5 
j2
j2
j5  j5 
+ 2 +
100V ~ I2
~ 1090V
 I1 
j10 
Fig. 1
From fig. 1, it is seen that two fluxes 1 and 2 aid each other. Hence, dots are placed at the two
coils, as shown in fig. 2.
j2 
5 j5  j5  5
+ +
100V ~ j10 ~ 1090V

I1 I2 
Fig. 2
The equivalent circuit in terms of dependent sources is shown in fig. 3.
j2I2 j2I1
5 j5  j5  5
+   +
+  +
+ + +
100V ~ j10 ~ 1090V

I1

I2 
Fig. 3
Applying KVL to mesh 1,
100  (5 + j5)I1  j2I2 + j10(I1 + I2) = 0
(5  j5)I1 j8I2 = 100 …………….. (i)
j10(I2 + I1) + j5I2 j2I1 + 5I2 1090 = 0
j8I1 + (5j5)I2 = 1090 ……………….. (ii)
Writing eq. (i) and (ii) in matrix form,
5  j5  j8   I1   100 
  j8 5  j5 I   1090
  2   
By Cramer‟s rule,
100  j8
1090 5  j5
I1 = = 0.7282.97 A
5  j5  j8
 j8 5  j5
5  j5 100
 j8 1090
I2 = = 1.71106.96 A
5  j5  j8
 j8 5  j5
VC =  j10(I1 + I2) = (j10)(0.7282.97 + 1.71106.96 A)
= 10.0824.03 V
03. (a)
Sol: Let the networks are cascaded as shown below.
1 I1 I1a I2a I1b I2b I2 2
+ + + + + +
V1 V1a Network V1b Network V2b V2
V2a
„a‟ „b‟
     
1 2
(i) To determine Z12:

Let the Z-parameter equations of these networks be written as,
V1a = Z11a I1a + Z12a I2a ……………… (1)
V2a = Z21a I1a + Z22aI2a
V1b = Z11bI1b + Z12b I2b ……………… (2)
V2b = Z21b I1b + I22bI2b
Z12 is given for overall networks as,
V
Z12  1 ……………… (3)
I 2 I 0
1
From fig. observe that,

I1 = I1a
Since I1 = I1a = 0 by equation (3) eq. (1) becomes,
V1a = Z12aI2a
And V2a = Z22aI2a
From fig. observe that V1 = V1a and V2a = V1b. Hence above equations will be
V1 = Z12aI2a …………………… (4)
V1b = Z22aI2a
Putting value of V1b from above equation in first equation of eq. (2)
Z22aI2a = Z11bI1b + Z12bI2b
From fig. observe that I2a = I1b and I2b = I2, then above equation becomes,
Z22aI2a =  Z11bI2a + Z12bI2
 I2a(Z11b + Z22a) Z12bI2
Z12 b
 I2a = I2
Z11b  Z 22 a
Putting this value of I2a in eq. (4),
Z12 b
V1 = Z12a . I2
Z11b  Z 22a
V1 Z12a Z12 b
 
I 2 Z11b  Z 22 a
By equation (3) above equation will be,
V Z12 a Z12 b
Z12 = 1 =
I 2 I 0 Z11b  Z 22 a
1
(ii) To determine Y12:

The Y-parameter equations for the two cascaded networks are written as,
I1a = Y11aV1a + Y12aV2a ………………… (5)
And I2a = Y21aV1a + Y22aV2a
I1b = Y11bV1b + Y12bV2b
I2b = Y21bV1b + Y22bV2b ……………. (6)
Y12 for the overall network is given as,
I
Y12 = 1 ……………. (7)
V2 V 0
1
From fig.
V1 = V1a and I1 = I1a
With V1 = V1a = 0 and above equation we can write equation (5) as,
I1 = Y12aV2a
I2a = Y22a V2a ……………… (8)
From fig. observe that I2a = I1b therefore above equation becomes,
I1b = Y22aV2a
With above equation, the first equation of equation (6) becomes,
Y22aV2a = Y11bV1b + Y12bV2b
Since V2a = V1b and V2b = V2 from fig. the above equation becomes,
Y22aV2a = Y11bV2a + Y12bV2
 (Y11b + Y22a)V2a = Y12bV2
Y12 b
 V2a =  V
Y11b  Y22a  2
Y12 b
Putting this value of V2a in equation (8) we get, I1 = Y12a. V2
Y11b  Y22a
I1 Y Y
  12a 12 b
V2 Y11b  Y22a
From equation (7) we can write the above equation as,
I Y Y
Y12 = 1   12a 12 b
V2 Y11b  Y22a
This is the required expression for Y12.
03. (b)
Sol:
KT N A N D
(i) Built in Potential, V0  n
q n i2
KT
Given: ND = 11016/cm3 , NA = 51018/cm3, ni = 1.51010/cm3 and  26 mV
q
 5  1018  1 1016 
V0  26 mV n  
 1.5  1010 2
 
V0 = 0.8589V
2 si  1 1 
Diode depletion width, W  V0   
q  NA ND 
Given: si = 1.0410–12 F/cm, NA = 51018/cm3, ND = 11016/cm3
2  1.04  10 12  1 1 
W  0.8589  
1.6  10 19
 5  10
18
1  10 16 
W = 3.3448  10–5cm
(ii)
+ V1 – + V2 –
D1 D2
I01
I01 I02
5V
 V2 
I 2  I 02 e VT  1
 
 
V2
I2
 e VT  1
I 02
V2
VT I2
e  1
I 02
V2  I 
  n 1  2 
VT  I 02 
 I 
V2  VT n 1  2 
 I 02 
 I 
V2  VT n 1  01  [∵ I2 = –I01]
 I 02 
 5
V2  2  26 mV n 1  
 10 
V2 = 226mV n 0.5
V2 = –0.036V
Apply KVL:-
–5 – V2 – V1 = 0
V1 + V2 = –5
V1 = –5 – V2
V1 = –5–(–0.036)
V1 = –4.964V
03. (c)
Sol: Given data:
Im = 0.0021 mA at 5 K, TC = 7.18 K,
H0 = 6.5  104
  T 2 
HC = H C ( 0 ) 1    
  TC  
TC = 7.18 K; T = 5.0 K
  5 2 
H0 = 6.5  104 1    
  7.18  
= 6.5  104  0.5
= 3.3  104
Im = 2rHC
0.0021  10`3 = 2r  3.3  104
0.002  103
r=
2  3.3  104
r = 1.012 103
Diameter of the wire is D = 2r
= 2  1.012  103
= 2.024 103 m
04. (a)
Sol: Step I: Calculation of VTh (fig. 1)
+ A 120V
VTh +
15 
45V I1

B 
10  5 +
 + 
+  + 
 +
5 20V
Fig. 1

45  120  15I1  5(I1  I2) 10(I1 I2) = 0
30I1  15I2 = 75 ……….. (i)
20  5I2  10(I2  I2) 5(I2 I1) = 0
15I1 + 20I2 = 20 ………….. (ii)
Solving Eqs. (i) and (ii),
I1 = 3.2 A
I2 = 1.4 A
Writing the VTh equation,
45 VTh 10(I1  I2) = 0
VTh = 45  10(I1 I2)
= 45 10[(3.2 (1.4)] = 63 V
Step II Calculation of RTh (fig.2)
A
RTh 15 
B
10  5
5
Fig. 2
Converting the delta formed by resistors of 10 , 5  and 5  into an equivalent star network (fig. 3)
A RTh A
B 15 B A
R1 RTh
2.5 15
2.5 B 16.25
R2 2.5
R3 2.5
1.25
Fig. 3 Fig. 4 Fig. 5
10  5
R1 = = 2.5 
20
10  5
R2 = = 2.5 
20
55
R3 = = 1.25 
20
Simplifying the network (fig4 and fig. 5)
RTh = (16.25||2.5) + 2.5 = 4.67 
Step III
Calculation of IL (fig. 6)
4.67
A
63V 20
IL
B
Fig. 6
63
IL = = 2.55 A
4.67  20
04. (b)
Sol: The resonant frequency is given by
1 1
fr = =
2 LC 2 0.5  8  106
= 79.58 Hz
V 220
Ir = = = 44 A
R 5
The quality factor is given by
 L 2  79.58  0.5
Qr = r =
R 5
= 50
The bandwidth is given by
f
BW = r
Qr
79.58
f2  f1 =
50
f2 f1 = 1.59 Hz
But 1 r = 2r or f1f2 = f r2
(79.58) 2 6.333 103
 f1 = 
f2 f2
6.333  103
 f2  = 1.59
f2
f 22  1.59f 2  6.333 103 = 0
Solving for f2
f2 = 80.38 Hz
and f1 = 78.79 Hz
The voltage across the capacitor at resonance is
VC = QrV =50  220 = 11 kV
04. (c)
Sol:
(i) Factors affecting resistivity:
1. Temperature: The electrical resistance of most metals increases with increase of temperature
while those of semiconductors and electrolytes decreases with increase of temperature.
2. Alloying: A solid solution has a less regular structure than a pure metal. Consequently, the
electrical conductivity of a solid solution alloy drops off rapidly with increased alloy content.
In other words, the addition of small amounts of impurities leads to a considerable increase in
resistivity.
 The temperature coefficient of metals is very small. Therefore, increase in resistivity due to
the addition of impurities is temperature independent. This suggests the existence of alloys,
whose resistance varies little with temperature.
 The resistivity may be said to be consists of two parts; one part is resistance at absolute zero
of temperature, and another part, which arises from crystal imperfections and this part
would be zero only in undistored crystals.
 The residual resistance of alloys is obtained by extrapolating the temperature resistance
curves to absolute zero, therefore, is quite appreciable. Further, different atoms dissolved in
a given solvent metal, affect the resistivity in different ways, which is largely dependent
upon the balance of the solvent and solute atoms.
3. Cold Work: Mechanical distortion of the crystal structure decrease the conductiviy of a metal
because the localized strains interfere with electron movement. Thus, hard drawn copper wire
has a lower conductivity than annealed copper. Subsequent annealing restores the electrical
conductivity by establishing greater regularity in the crystal lattice.
4. Age Hadening: Age hardening increases the resistivity of an alloy.
(ii) Given data:

L = 1 cm = 1  102 m
A = 103  103 = 106 m2
ni = 2.5  1019/m3
e = 0.39m2V1s1
p = 0.19m2V1s1
1 1
Resistance R = =
A n i e 0   e A
102
=
2.5  1019  1.6  1019 0.39  0.19
102  106
=
2.5  0.58  1.6
= 4.31  103 
04. (d)
Sol:
(i) (1) A = 4cm2, Pout = 50mW
Pout 50 103 50
Maximum efficiency, max   3
 100 = 10.416%
P0  A 12010  4 120 4
Pmax 70  103
(2) Fill factor    0.875
VOC I SC 0.5  160 103

(3) I  I ph  I0 eV / VT  1 
V = VOC
I=0
 VVOC 
Iph = I0  e T 1
 
 
VOC
 I ph  I o e VT
 I ph 
 VOC  VT ln 
 I0 
VOC 2  VOC1
I ph 2
  e VT
I ph1
 I ph 2 
 VOC2 – VOC1 = VT ln(15)   15
 I 
 ph1 
 VOC2 = VOC1 + VT ln (15)
 VOC2 = 0.5 + 25  10–3 ln(15) = 0.5677 Volt
(ii) Reverse saturation current

 D Dn  2
I0 = Ae  P  n i
 LP ND Ln NA 
or reverse saturation current, density
 D Dn  2
I0/A =  P   en i
 LP ND Ln NA 
I0/A=  1.2  103
4

3.4  103  19
  1.602  10  (1.6  10 )
16 2
 3.5  10  10
21
7.1  10 4  1022 
= 1.610–7 A/m2
I0/A = 0.16A/m2
05. (a)
Sol: Consider the network of fig. Let a load impedance ZL be connected across the terminals a and b.
Let the current flowing into the load impedance due to all the sources in the network A be I. Now,
let a voltage source of value V1 be connected in series with the load as shown in fig. Let the
current due to V1 alone, with all other sources in the network A reduced to zero, be equal to I.
Adjust the voltage V1 such that the net current flowing into the impedance ZL is zero.
a I V1 
+ a +
+
Network Network I
ZL VOC I ZL
A A

b  b
Fig. 1. Original network Fig. 2. Network A in series with
with load impedance ZL a voltage source V1 and ZL
By superposition theorem
I + I` = 0 …………… (1)
I = I …………… (2)
Further, since the net current from network A is zero, it is as good as open circuited. Also, since
the current in ZL is zero, there is no voltage drop across it. Applying Kirchhoff‟s voltage law we
get
VOC V = 0 …………… (3)
Or V1 = VOC …………… (4)
Now reduce all the independent voltages sources in network A to zero, since there are no sources in
the network, the network can be replaced by a single impedance and by definition, it is the
Thevenin‟s equivalent impedance. Hence with the source V1 only present, the equivalent network
is given in fig.
V1
a + 
I
ZTh ZL
b
Fig. 3 The equivalent network with only V1 present
The current I due to the source V1 alone is given by

V1
I = ………………. (5)
ZTh  ZL
But from eqs. (2) and (4), we have
VOC
I =  I  ……………….. (6)
ZT h  ZL
This equation can be translated as an equivalent network given in fig.
ZTh
a
+
VOC I ZL

b
Fig. 4 Thevenin‟s equivalent network
Voc is also known as the Thevenin‟s equivalent voltage.
05. (b)
Sol: If we refer to figure below, we find that atoms touch along the edge of the cube in SC structures.
The corner atoms are centered on the corners of the cube, so
ao = 2r
In BCC structures, atoms touch along the body diagonal, which is 3a o in length. There are two
atomic radii from the center atom and one atomic radius from each of the corner atoms on the body
diagonal, so
4r
ao 
3
In FCC structures, atoms touch along the face diagonal of the cube, which is 2a o in length. There
are four atomic radii along this length, two radii from the face centered atom and one radius from
each corner, so
4r
ao 
2
The relationships between the atomic radius and the

lattice parameter in cubic systems
05. (c)
Sol: Given data, W = 0.1mm
t = 10µm
L = 5mm
Bz = 1010–5 Wb/cm2
VAB = –2mV and VCD = 100mV
B Ix
z
y B
From the sign of V AB , we can see that the semiconductor is n-type and the majority carriers are
electrons.
Bz I x 10  10 5  10 3
n0    3.125  10 17 / cm 3
qt  VAB  1.6  10 19  10  10 4  2  10 3
R V /I 0.1 / 103
  CD x   0.002  cm
L / wt L / wt 0.5 / 0.0110 104
1 1 cm 2
n    10,000
qn0 0.0021.6 1019  3.1251017 V S
05. (d)
Sol: Reverse Saturation current of a diode is given as
 Dp Dn  3  E / KT
I0     A qn i and n i  A 0 T .e G 0
2 2
 p D
L N L N 
n A 
Also Dn & Dp are inversely proportional to T

Kn Kp
Let D n  and D p 
T T
 Kp Kn 
 
I 0   T  T  A q A0T 3 .e  EG 0 / KT
 L p N D Ln N A 
 
I 0  KT m .e  E G 0 / KT
m = 2, EG0 = 0.785 &  = 1 for Ge
m = 1, EG0 = 1.21 &  = 2 for Si
Taking log on both sides
n I 0   n K   mn T  
E G0
KT
Differentiate w.r.t T
1 dI 0 m E
 0   G0 2
I 0 dT T KT
 dI 0 
 
 I0   m  E G0
dT T KT 2
For Ge:
 dI 0 
 
 I0  2  0.785
 0.107
dT 300 1  0.02586  300
 11.0% increases
For Si:
 dI 0 
 
 I 0   1.5  1.21
 0.082  8% increases
dT 300 2  0.02586  300
05. (e)
Sol: The two planes are drawn in figure. On the (010) plane, the atoms are centered at each corner of the
cube face, with 1/4 of each atom actually in the face of the unit cell. Thus, the total atoms on each
face is one. The planar density is
Planar density 010 
atoms per face 1atom per face

area of face 0.3342
= 8.96 atoms/nm2 = 8.961014 atoms/cm2
Fig: The planar densities of the (010) and (020)

planes in SC unit cells are not identical
The planar packing fraction is given by,
Packing fraction (010) =

area of atoms per face
=
1 atom r 2  
area of face a o 2
r 2
  0.79
2r 2
No atoms are centered on the (020) planes. Therefore, the planar density and the planar packing
fraction are both zero. The (010) and (020) planes are not equivalent.
05. (f)
Sol:
Crystal structure Lattice Parameters
a=b=c
(i). Cubic
 =  =  = 90
abc
(ii). Monoclinic
 =  = 90,   90
abc
(iii). Orthorhombic
 =  =  = 90
a=b=c
(iv). Rhombohedral (Trigonal)
 =  = 90,   90
1
2 3 4
Cubic
Simple
orthorhombic
06. (a)
Sol: When the switch is open, no current will flow through L2. Hence just before closing the switch at
t = 0, the current through L2 is zero. i.e.,
iL2(0) = 0
When the circuit is in steady state before closing the switch, the inductance L1 will be saturated.
1V 1
Hence current through this inductance will be  A. This same current will flow till switch
2 2
is closed. Thus initial current through L1 will be,
1
iL1(0) = A
2
Now let us prepare the Laplace equivalent circuit when the switch is closed.
L1i(0)
sL1 R2
 +  +
sL2
Vdc
 R1
s I1(s) I2(s) 
L2i(0)
+
Fig.
Applying KVL to loop 1we get,

 dc  sL1I1 (s)  L1i L1 (0  )  R 1 I1 (s)  I 2 (s) = 0
V
s
Putting values of various components we get,
1 1
  2sI1 (s)  2.  2I1 (s)  2I 2 (s) = 0
s 2
1
2(s + 1)I1(s) 2I2(s) =  1 ………….. (1)
s
Applying KVL to loop 2 we get,
R2I2(s) + sL2I2(s) L2iL2(0) + R1[I2(s) I1(s)] = 0
Putting various values we get,
2I2(s) + 3sI2(s)  0 + 2I2(s) 2I1(s) = 0
2I1(s) + (3s+4)I2(s) = 0 …………… (2)
Solving equation (1) and equation (2) for I 2(s) using Cramer‟s rule we get,
1
2s  2 1
s
2 0
I2(s) =
2s  2  2
 2 3s  4
1 
2  1
s  1 s 1
= 
(2s  2)(3s  4)  4 3  2 14 4
s s  s  
 6 6
1 s 1
=
 1
ss  2  s  
3
 3
Expanding I2(s) in partial fraction expansions we get,
 
1 k0 k1 k2 
I2(s) =    
3 s s  2 s  1
 3
s 1 3
k0 = 
 1 2
(s  2) s  
 3  s 0
s 1 3
k1 = 
 1 10
s s  
 3  s  2
s 1 6
k2 = 
s(s  2) s   1 5
3
3 3 6 
1 
I2(s) =  2  10  5 
3 s s  2 s  1
 3
1 1 1 1 2 1
= .  .  .
2 s 10 s  2 5 s  1
3
Taking Laplace inverse transform of above equation using standard Laplace tables we get,
t
2 
i2(t) = Ut   e  2 t  .e 3
1 1
2 10 5
This is the current in L2.
06. (b)
Sol:
(i) Let us assume M1 is saturated & proceed
Since VGS = 1V
 n Cox VGS  VT 2
1 W
ID 
2 L
=
1
 100  10 6 
2
1  0.42 = 200µA
2 0.18
We must check our assumption by calculating the drain potential
VDS = VDD – IDRD = 1.8 – 20010–6  5  103 = 0.8V
VDS > VGS – VT  M1 Saturated
If the gate voltage increases to 1.01V, then
ID 
1
 100  10 6 
2
1.01  0.4  206 .7A
2 0.18
VDS = 1.8 – 206.7  10–6  5  103 = 0.766V
M1 is still Saturated
Change in drain voltage = 0.8 – 0.766 = 34mV
I D 2 1  VDS2 1  VDS2 1  0.1 1
(ii) (1)   I D2   I D1   1mA  1.048 mA
I D1 1  VDS1 1  VDS1 1  0.1 0.5
The change in ID is 48µA
VDS VDS2  VDS1
Device output impedance, r0    10 .42 K
I D I D 2  I D1
1
(2) Assuming  , calculate ID and r0 if both W & L are doubled
L
W
remains unchanged, but  drops to 0.05V–1
L
1  VDS2
I D2  .I D1  1.024 mA
1  VDS1
 ID = 24µA
VDS 1V  0.5V
r0    20.84 K
I D 24A
(iii) VI : (5.7V , 6.3V)
V 5
I I  I Z  5mA
R
V 5
 IZ  I  5mA
R
In the worst care, zener must remain in breakdown
VI min  5
I Zmin   5mA
R
5 .7  5 0 .7 V
2mA   5mA  R   100 
R 7 mA
For IZ to be maximum, VI should be maximum
VI max  56.3  5
I Zmax   5mA 
 5mA  8mA
R 100
Power rating of zener = Vz. I Zmax = 40m
06. (c)
Sol: Properties and requirements of good insulating materials:
The requirement of good insulating materials can be classified as electrical, mechanical, thermal
and chemical.
1. Electrical properties:
 Electrically, the insulating material should have resistivity to reduce the leakage current and
high dielectric strength to enable it to withstand higher voltage without being punctures or
broken down.
 Further, the insulator should have small dielectric loss.
2. Mechanical properties:
 Since the insulators are used on the basis of volume and not weight, a low density is preferred.
 The insulators should also have small thermal expansion to prevent mechanical damage.
 Further, it should be non-ignitable, or ignitable, it should be self extinguishable.
3. Thermal properties:
 A uniform viscosity for liquid insulators ensures uniform thermal and electrical properties.
 Liquid and gaseous insulators are used also used as coolants. For example, transformer oil,
huydrogen and helium are used both for insulation and cooling purposes. For such materials,
good thermal conductivity is a desirable property.
4. Chemical properties:
 Chemically, the insulators should be resistant to oil, liquids, gas fumes, acids and alkalies.
 It should not deteriorate by the action of chemicals in soils or by contact with other metals.
 The insulator should not absorb water particles, since water lowers the insulation resistance and
the dielectric strength.
 Insulating materials should have certain mechanical properties depending on the use to which
they are put. Thus when used for electric machine insulation, the insulator should have
sufficient mechanical strength to withstand vibration. Good heat conducting property is also
desirable in such cases.
 Materials with large electronic and ionic polarizabilities and therefore large permittivity are
used for making dielectric capacitors. Titanium oxide which has a permittivity of about 100 is
a good example of such a material.
 The use of molecules with a permanent dipole moment is not desirable because of the
possibility of large dielectric losses at high frequencies.
07. (a)
Sol:
I S qDp qD  Dp Dn  2
(i) J S   Pn 0  n n p 0  q    ni
A Lp Ln  L p N D Ln N A 
We may calculate
Ln  Dn n 0  25  5 107  35.4m
L p  D p  p  10 10 7  10m

J S  1.6  10 19 
10
4

25
4

18 
1.5 1010  2
 3.6  10 11 A / cm 2
10  10 10 35.4 10  5 10 
16
 I   J   20 103 
VOC  VT n 1  L   VT n 1  L   2  0.0259V n 1  11 
 IS   JS   3.6 10 
VOC = 1.043V = 1.043V
(ii) Steady state photocurrent density is
JL = q [W + Ln + Lp] GL
L n  D n  n 0  25  5  10 7  35 .4m
L p  D p  p  10  10 7  10m
N N   1016 1016 
V0  VT n  A 2 D   0.0259n    0.695V
 ni 
10 2
 1.5 10   
2   2  11 .7  8.85  10 14
W V0  VR  1  1   19
0.695  5 116  116   1.21m
q  NA ND  1.6  10 10 10 

J L  1.6  10 19 1.21  10 4  35 .4  10 4  10  10 4 10 21 
2
JL = 0.75 A/cm
Pc P
(iii) cp   100  c  100
P V.I
6
190 10
= 100 = 0.507%
1.5  25 10 3
07. (b)
Sol: Assume that the currents are moving away from the nodes.
Applying KCL at node 1,
V  20 V1  0.5V1  V2
2= 1 
20 5
 1 1 0.5  1
   V1  V2 = 3
 20 5 5  5
0.15V1 0.2V2 = 3
Applying KCL at node 2,

V2  0.5V1  V1 V2 V2  40
  =4
5 2 10
 0 .5 1  1 1 1  40
  V1     V2  4 
 5 5  5 2 10  10
0.1V1 + 0.8V2 = 8
Solving eqs. (i) and (ii),

V1 = 40 V
V2 = 15 V
07. (c)
Sol: Photoconductivity
Illumination of an insulating crystal by photons of energy equal to or greater than the band gap E g
usually excites electrons from the valence band to the conduction band. It makes available the free
electrons in the conduction band and the free holes in the valence band, both of which contribute to
the electric current under the influence of an external electric field. This phenomenon is called
photoconductivity and is used in light metres (in cameras) and solid state infrared detectors
photons
Wire
W
H
Ohmic
Contact L
Consider semiconducting slab placed in dark. Since a very small current flows in dark, the dark
conductivity is
d = nee + peh  0
Where n and p are free electron and hole concentrations, e and h are the electron and hole
mobilities, and e is the electron charge. When the electromagnetic radiation of an appropriate
frequency is allowed to fall on the semiconductor slab, the electrical conductivity increases, the
change in the conductivity (assuming n = p) is given by
 =  – d = n e(e + h)
 ne e   h 

d d
If “” is the carrier lifetime and f is the rate of their generation (i.e. number of electron-hole pairs
produced per second by the absorbed photons), then the average photo induced concentration is
given by
n = f
Where n = 1020m-3 for germanium
In a practical device, the sensitivity is expressed as a gain G.
If „t‟ is the transit time of the carriers between the electrodes then

G
t
Thus, photoconductivity is large when the lifetime is large. A pure material is generally found to
have low  (10-6s) due to the greater probability of electron hole recombination and hence is
relatively insensitive. However a careful doping can suppress recombination and hence increase 
and sensitivity.
intrinsic Extrinsic
h Ec
hole
h Electron
h
Ev
In CdS careful doping of iodine increases  to 10-3 sec.

Iodine substituting for sulphur acts as donor.
Cd2+ vacancies act as efficient hole traps. During photoexcitation, holes are readily trapped and
electron have much less chance of recombination and hence average lifetime is increased
CdS and CdTe single crystals are widely used as photoconductors because of their high sensitivity
and response to visible light wavelengths.
08. (a)
Sol: The valence of copper is one; therefore the number of valence electrons equals the number of
copper atoms in the material. The lattice parameter of copper is 3.6151 × 10 –8 cm and, since copper
is FCC, there are four atoms/unit cell. The conductivity  = 5.98 × 105–1 cm–1
n
4 atoms / cell1electron/ atom = 8.466 × 1022 electrons / cm3
3.6151 108 cm3 / cell
q = 1.6 × 10–19 C
 5.98  105  1cm1
(i)   
nq 8.466  1022 electrons/ cm3 1.6  1019 C 
cm2 cm2
= 44.1  44.1
.C V.s
(ii) The electric field is
V 10 V
E   0.1 V / cm
I 100cm
The mobility is 44.1 cm2/(V.s); therefore,
  E  [44.1cm2 /(V.s)](0.1V / cm) = 4.41 cm/s
08. (b)
Sol:
(i) Differences between Edge and Screw Dislocations:
S.No. Edge dislocation Screw dislocation
1. It is produced when there is a slight It is produced during crystallization, when
mismatch in the orientation of adjacent there is a twist in stacking sequence of atoms
part of growing crystal.
2. The region of disturbances extends along
The region of disturbances extends in two
an edge of the lattice. separate planes which are perpendicular to
each other.
3. Burger vector is perpendicular to edge Burger vector is parallel.
dislocation.
4. It has shear, tensile and compressive Only shear stresses exists.
stresses.
5. It can glide or slip in a direction It can move by slip.
perpendicular to its length
6. It has an incomplete plane which lies It has lattice planes which spirals around the
above or below the slip plane lattice planes like a left-hand or right hand
screw.
(ii) Given data:

Q = 21010 C
d = 4mm = 4103 m
I = 3.5
A = 650 mm2 = 65010-6 m2
Qd
V=
0 r A
2  1010  4  1013
=
8.85  1012  3.5  650  106
= 3.973 104 105
= 39.73 V
08. (c)
Sol: p = –NAq Axp
p
 N Aq x p 
A
– – – + + +
– – – + + +
p – – – + + + n
NA – – – + + + NP
–xp xn
ND
xp  .xW
NA  ND
2  1 1  KT  N A N D 
W V0    , V0  n  2


q  NA ND  q  ni 
Given NA = 1017/cm3 =1023/m3, ND = 1016/cm3 =1022/m3
ni = 1.5 1010/cm3 = 1.51016/m3
KT  N A N D   10 23  10 22 
V0  n   26 mV n    0.757 V
q 2
 ni

  2
 1.5  1016  
2  1 1  2  12  8.85  10 14  1 1 
W V0    19
 0.757  23  22 
q  NA ND  1.6  10 10 10 
W = 3.32510–8m = 3.32510–6cm
ND 10 22
xp    23  3.325  10 8 m  3.023  10 9 m
NA  ND 10  10 22
xp = 3.02310–7cm
p
  x p N A q  3.023  10 7  10 17  1.6  10 19
A
= –4.83610–9 C/cm2
08. (d)
Sol: XL1 = 2fL1 = 2  50  0.01 = 3.14 
XL2 = 2fL2 = 2  50  0.02 = 6.28 
1 1
Xc =  = 15.96 
2fC 2  50  200  106
Z1 = 6 + j3.14 
Z2 = 4 + j6.28 
Z3 = 2 j15.92 
Z = Z1  2 3 = 6  j3.14 
Z Z 4  j6.282  j15.92 = 17.2730.75
Z 2  Z3 (4  j6.28)(2  j15.92)
V 1000
I=  = 5.7930.75 A
Z 17.2730.75`
P = VIcos = 100  5.79  cos(30.75) = 497.94 W
Pf = cos = cos(30.75) = 0.86 (lagging)

ESE - 2020 Mains Test Series: Electronics & Telecommunication Engineering

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

ESE - 2020 Mains Test Series: Electronics & Telecommunication Engineering

Uploaded by

Copyright:

Available Formats

1 TEST CODE: 607

ESE - 2020 Mains Test Series

The complete incidence matrix (Aa) is written as

(ii) H = 1300 A/m, r = 1.006

Liquid phase methods:

(i) To determine Z12:

From fig. observe that,

(ii) To determine Y12:

Applying KVL to mesh 1,

Fig. 3 Fig. 4 Fig. 5

(ii) Given data:

(ii) Reverse saturation current

The current I due to the source V1 alone is given by

Fig. 4 Thevenin‟s equivalent network

Voc is also known as the Thevenin‟s equivalent voltage.

The relationships between the atomic radius and the

Also Dn & Dp are inversely proportional to T

Fig: The planar densities of the (010) and (020)

The planar packing fraction is given by,

Packing fraction (010) =

Crystal structure Lattice Parameters

Applying KVL to loop 1we get,

Applying KCL at node 2,

Solving eqs. (i) and (ii),

In CdS careful doping of iodine increases  to 10-3 sec.

(ii) Given data:

You might also like