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ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lecture Outline
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lecture Outline
Penn ESE 570 Spring 2019 – Khanna Penn ESE 570 Spring 2019 – Khanna 2
MOS Capacitor with External Bias 2-terminal MOS Cap # 3-terminal nMOS
! Three Regions of Operation:
" Accumulation Region – VG < 0 (Cut-off) 0
VG ≥ V T
- - - - - - - - - -
VG VD
VSB = 0
VS
VG VD
VS - -
- - -
-
- - - - -
- - - - - -
- - - -
depletion region - -
Penn ESE 570 Spring 2019 - Khanna 5 Penn ESE 570 Spring 2019 - Khanna 6
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Review: Threshold Voltage MOSFET – IV Characteristics
50
VDS
2qN Aε Si
γ= 10
Cox
0
0 2 4 6 8 10
Gate to source voltage [V]
VGS
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VGS -Vth - - -
IDS -
Depletion
VDS ≥VGS -VTH - - - - - -
region
Immobile
Substrate or
p acceptor
Bulk B
ions
VDS
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MOSFET – IV Characteristics Linear Region
VDS VGS > VT0
50
VDS small, VDS < VGS - VT0
Drain current [arbitrary unit]
40
30
IDS -
- - - -
20 n+ - - n+
- - - -
10
VGS
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y=0 y=L
V(y)
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Voltage along Channel Channel Field
! Voltage divider between VS and VD ! When voltage gap VG - Vy drops below Vth, channel
drops out of inversion
" If VDS = VGS – Vth #VGS – VDS =VG – VD = Vth
y=0 y=L
Vd
V(y)
Vs
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VDS - VDSAT
- -
-
- - - z - - - - V(x) = VDSAT
n+ - - - n+ n+ -
- - n+ -
- -
- - - - - -
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n+ z n+
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MOSFET IV Characteristics – Linear Region MOSFET IV Characteristics – Linear Region
VGS > VT0 VGS > VT0
VDS small, VDS < VGS - VT0 VDS small, VDS < VGS - VT0
n+ z n+ n+ z n+
V(y) V(y)
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z
n+ n+ yy
z
x
dy
dR = −
V(y) W ⋅ µ n ⋅ QI (y)
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∫ I D ⋅ dy = ∫ −W ⋅ µn ⋅ QI ( y) ⋅ dVC
0 0
VDS
I D ⋅ L = W ⋅ µ n ⋅Cox ∫ (VGS −VC −VT 0 ) ⋅ dVC
0
W⎛ V2 ⎞
I D = µ n ⋅Cox ⎜ (V −V )V − DS ⎟
L ⎜⎝ GS T 0 DS 2 ⎟⎠
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MOSFET IV Characteristics – Linear Region MOSFET IV Characteristics
! Example: For an nMOS transistor with μn = 600cm2/Vsec,
W# V2 & Cox = 7x10-8 F/cm2, W = 20μm, L = 2 μm, VT0 = 1V, plot
I D = µ n ⋅ Cox % (VGS −VT 0 )VDS − DS (
L$ 2 ' the relationship between ID and VDS, VGS.
W
k ' = µ n ⋅ Cox k = k'
L
k' W k
ID =
2 L
(2(VGS −VT 0 )VDS −V 2DS ) ID =
2
(2(VGS −VT 0 )VDS −V 2DS )
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Penn ESE 570 Spring 2019 – Khanna 33 Penn ESE 570 Spring 2019 – Khanna 34
W⎛ V2 ⎞ W⎛ V2 ⎞
I D = µ n ⋅Cox ⎜ (V −V )V − DS ⎟ I D = µ n ⋅Cox ⎜ (V −V )V − DS ⎟
L ⎜⎝ GS T 0 DS 2 ⎟⎠ L ⎜⎝ GS T 0 DS 2 ⎟⎠
VDS =VDSAT =VGS −VT 0 VDS =VDSAT =VGS −VT 0
W⎛ ⎞ W⎛ ⎞
2 2
(V −V ) (V −V )
I D = µ n ⋅Cox ⎜ (V −V )(V −V ) − GS T 0 ⎟ I D = µ n ⋅Cox ⎜ (V −V )(V −V ) − GS T 0 ⎟
L ⎜⎝ GS T 0 GS T 0 2 ⎟
⎠ L ⎜⎝ GS T 0 GS T 0 2 ⎟
⎠
µ n ⋅Cox W µ n ⋅Cox W
ID = (V −V ) 2 ID = (V −V ) 2
2 L GS T 0 2 L GS T 0
Penn ESE 570 Spring 2019 – Khanna 35 Penn ESE 570 Spring 2019 – Khanna 36
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MOSFET IV Characteristics MOSFET IV Characteristics
W⎛ V2 ⎞ W⎛ V2 ⎞
I D = µ n ⋅Cox ⎜ (V −V )V − DS ⎟ I D = µ n ⋅Cox ⎜ (V −V )V − DS ⎟
L ⎜⎝ GS T 0 DS 2 ⎟⎠ L ⎜⎝ GS T 0 DS 2 ⎟⎠
VDS =VDSAT =VGS −VT 0 VDS =VDSAT =VGS −VT 0
W⎛ (V −V ) 2 ⎞ W⎛ (V −V ) 2 ⎞
I D = µ n ⋅Cox ⎜⎜ (VGS −VT 0 )(VGS −VT 0 ) − GS T 0 ⎟⎟ I D = µ n ⋅Cox ⎜⎜ (VGS −VT 0 )(VGS −VT 0 ) − GS T 0 ⎟⎟
L⎝ 2 ⎠ L⎝ 2 ⎠
µ n ⋅Cox W µ n ⋅Cox W
ID = (V −V ) 2 ID = (V −V ) 2
2 L GS T 0 2 L GS T 0
IN GENERAL
ID(VDS = VDSAT) = ID(sat) ID(VDS = VDSAT) = ID(sat)
ID(sat)
LINEAR SAT LINEAR SAT
Penn ESE 570 Spring 2019 – Khanna 37 Penn ESE 570 Spring 2019 – Khanna 38
µ n ⋅ Cox W 2 µ ⋅C W 2
I DSAT = (VGS − VT 0 ) = n ox $ ΔL ' (VGS − VT 0 )
2 L' 2 L &1− )
% L (
Penn ESE 570 Spring 2019 – Khanna 39 Penn ESE 570 Spring 2019 – Khanna 40
If λ$VDS<<1, ΔL 1
1− ≈ 1− λ ⋅VDS ≈ λ≠0
L 1+ λ ⋅VDS λ=0
µ n ⋅ Cox W 2
ID = (VGS − VT 0 ) (1+ λ ⋅VDS )
2 L
Penn ESE 570 Spring 2019 – Khanna 41 Penn ESE 570 Spring 2019 – Khanna 42
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MOSFET IV Characteristics MOSFET IV Characteristics
W# V2 & W# V2 &
Linear Region: I D = µ n ⋅ Cox % (VGS −VT 0 )VDS − DS ( Linear Region: I D = µ n ⋅ Cox % (VGS −VT 0 )VDS − DS ( (1+ λ ⋅VDS )
L$ 2 ' L$ 2 '
µ n ⋅ Cox W 2 µ n ⋅ Cox W 2
Saturation Region: ID = (VGS − VT 0 ) (1+ λ ⋅VDS ) Saturation Region: ID = (VGS − VT 0 ) (1+ λ ⋅VDS )
2 L 2 L
DISCONTINUOUS! DISCONTINUOUS!
@ VDS = VDSAT @ VDS = VDSAT
λ≠0 λ≠0
λ=0 λ=0
Penn ESE 570 Spring 2019 – Khanna 43 Penn ESE 570 Spring 2019 – Khanna 44
µ n ⋅ Cox W 2
Saturation Region: ID = (VGS − VT 0 ) (1+ λ ⋅VDS ) W# V2 &
2 L Linear Region: I D = µ n ⋅ Cox % (VGS −VT (VSB ))VDS − DS ( (1+ λ ⋅VDS )
DISCONTINUOUS! L$ 2 '
Level 1 model
@ VDS = VDSAT
λ$VDS<<1
µ n ⋅ Cox W 2
λ≠0 Saturation Region: ID = (VGS − VT (VSB )) (1+ λ ⋅VDS )
λ=0 2 L
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% %
' 0 VGS ≤ VTn ' 0 VGS ≥ VTp
' Cutoff/Subthreshold
' Cutoff/Subthreshold
' µ ⋅C W ' µ ⋅C W
I D = & n ox
2 L
( GS Tn SB )) VDS − V 2DS ) (1+ λ ⋅VDS )
2 (V − V (V VGS > VTn ,VDS < VGS − VTn I D = & p ox
2 L
( )
2 (VGS − VTp (VSB )) VDS − V 2DS (1+ λ ⋅VDS ) VGS < VTp ,VDS > VGS − VTp
' Linear/Resistive ' Linear/Resistive
' µ n ⋅ Cox W 2 ' µ p ⋅ Cox W 2
' (VGS − VTn (VSB )) (1+ λ ⋅VDS ) VGS > VTn ,VDS ≥ VGS − VTn ' (VGS − VTp (VSB )) (1+ λ ⋅VDS ) VGS < VTp ,VDS ≤ VGS − VTp
( 2 L Saturation ( 2 L Saturation
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Measurement of Parameters – kn,p Probe Station
D
G B
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D
G B
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D D
G B G B
S S
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Measurement of Parameters – γ Measurement of Parameters – γ
D D
G B G B
S
=> S
=>
SA SA
T T
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Measurement of Parameters – λ
Subthreshold
=> SAT
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Below Threshold Below Threshold
! Transition from insulating to conducting is non- ! Transition from insulating to conducting is non-
linear, but not abrupt linear, but not abrupt
! Current does flow ! Current does flow
" But exponentially dependent on VGS " But exponentially dependent on VGS
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! Current is from the parasitic NPN BJT transistor " Units: V/decade
when gate is below threshold and there is no €
" Every S Volts, IDS is scaled by factor of 10
conducting channel
n is the capacitive divider between parasitic capacitances
⎛ W ⎞ ⎜ GS th ⎟ ⎛
" ⎛ V −V ⎞ ⎛ VDS ⎞ ⎞
⎜ ⎟
" Typically 1 < n < 1.5 C +C I DS = I S ⎜ ⎟ e⎝ nkT /q ⎠ ⎜1− e⎝ −kT /q ⎠ ⎟ (1+ λVDS )
n= js ox
⎝L⎠ ⎜ ⎟
Cox ⎝ ⎠
Penn ESE 570 Spring 2019 – Khanna 65 Penn ESE 570 Spring 2019 – Khanna 66
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Subthreshold Slope IDS vs. VGS
! Exponent in VGS determines how steep the turnon
is " % kT
S = n$ ' ln(10)
# q&
" Units: V/dec
" Every S Volts, IDS is scaled by factor of 10 (Logscale)
€
! n – depends on parasitic capacitance divider
" n=1 # S=60mV at Room Temp. (ideal)
" n=1.5 # S=90mV
" Single gate structure showing S=90-110mV
Penn ESE 570 Spring 2019 – Khanna 67 Penn ESE 570 Spring 2019 – Khanna 68
! What if S=60mV?
(Logscale) " kT %
S S = n$ ' ln(10)
# q&
⎛ W ⎞ ⎜ GS th ⎟ ⎛
⎛ V −V ⎞ ⎛ VDS ⎞ ⎞
⎜ ⎟
I S ⎜ ⎟ e⎝ nkT /q ⎠ ⎜1− e⎝ −kT /q ⎠ ⎟ (1+ λVDS )
I DS = €
⎝L⎠ ⎜ ⎟
⎝ ⎠
Penn ESE 570 Spring 2019 – Khanna 69 Penn ESE 570 Spring 2019 – Khanna 70
Penn ESE 570 Spring 2019 – Khanna 71 Penn ESE 570 Spring 2019 – Khanna 72
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Big Idea Admin
! 3 Regions of operation for MOSFET ! HW 2 due tomorrow
" Subthreshold ! HW 3 due Friday, 2/8
" Linear " Posted tomorrow
" Saturation " Gets you started with Cadence
" Pinch Off " Make sure you can setup and launch Cadence over the weekend
" Channel length modulation " Don’t wait until night before homework is due!
! Level 1 Model
" ID=f (VGS, VDS, VSB)
" Empirical measured parameters: k, γ,λ
Penn ESE 570 Spring 2019 – Khanna 73 Penn ESE 570 Spring 2019 - Khanna 74
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