Note: While solving the problem, I noticed the answer is not giving reasonable value.

I looked
into the problem again and noticed that permittivity 11.7 should have been multiplied by
permittivity of semiconductor material which was not given in the problem. So I have added the
permittivity of GaAs assuming the semiconductor is made out of it. This problem was highlighted
by Shahroze Tayyeb but I was unable to identify the issue when he asked. So thanks to him for
this one!
Q1
SOLUTION:
Width w=15 μm
active area= A=20 μ m2
R L=50 Ω

permitivity=ε =11.7 ε 0=103.5918 ×10−12 F m−1

( ε 0 for GaAsis 8.854 ×10−12 F m −1 )
saturation velocity=v=105 m/s
A.
1
Bandwidth=
2 π ( T tr +T RC )

w
T tr = =150 ps
v
εA
T RC =R L
w
103.5918 ×10−12 ×20 ×10−6
T RC =50 ×
15× 10−6
T RC =6906.12 ps
1
Bandwidth= −12
2 π ( 150 ×10 +6906.12 ×10−12)

Bandwidth ≈ 22.555 MHz

B.
w opt =√ v R L εA

w opt =√ 105 ×50 ×6906.12 ×10−12 ×20 ×10−6

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w opt ≈ 821.03 μm

Q2
SOLUTION:

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