See discussions, stats, and author profiles for this publication at: https://www.researchgate.

net/publication/333220732

Memristor NRSC 2019

Presentation · May 2019

CITATIONS READS

0 252

4 authors, including:

Sherief Nafea Ahmed Ahmed Shaaban Dessouki

Suez Canal University Port Said University
7 PUBLICATIONS   19 CITATIONS    48 PUBLICATIONS   99 CITATIONS   

SEE PROFILE SEE PROFILE

Some of the authors of this publication are also working on these related projects:

Design for Yield in Memristor-Based Memories View project

Speech Processing View project

All content following this page was uploaded by Sherief Nafea on 20 May 2019.

The user has requested enhancement of the downloaded file.

 2019 36th National Radio
Science Conference (NRSC)

Dr. Sherief Fathy Ibrahim Dr. Hassan Mostafa

Assistant Professor, Faculty of
Engineering, Suez Canal University
Dr. Ahmed A. Shaaban Dessouki
Associate Professor, Faculty of
Engineering, Port Said University
Associate Professor, Faculty of
Engineering, Cairo University
Dr. El-Sayed Mahmoud El-Rabaie
Professor, Faculty of Electronic
Engineering, Menoufia University
1 Introduction

2 Memristor Types and Fabrication

3 Memristor Modeling

4 Memristors Potential Applications

5 Conclusion

2
1 Introduction
ii

i
Electrical iii
Characteristics
What is the
Memristor? HP TiO2
Memristor

iv

Why using
1 Memristor?

3
i What is the Memristor?

4
i What is the Memristor?

Memristor combines the behavior of a

memory and a resistor:
(i.e. memory+resistor)

Memristance (M):

𝒅𝝋 = 𝑴 𝒅𝒒
Memristance(M): is a property of
the memristor

𝐯 = 𝐌 𝐪 .𝐢
5
ii Electrical Characteristics
Unique I-V characteristic

6
iii HP TiO2 Memristor

The first fabricated devices exhibiting the

characteristics of a memristor:
(by HP labs in 2008)
iii HP TiO2 Memristor

8
iii HP TiO2 Memristor (Basic Operation)

• HP memristor:
Very thin film of titanium
dioxide (TiO2-x) between two
platinum(Pt) plates.

9
(a) Initial state (b) Doped increase (c) Undoped increase
iii HP TiO2 Memristor (Basic Operation)

When the charge flows in one direction “(b)Bottom”

(the resistance of the memristor decreases)

When the charge flows through the opposite direction “(c)Up”

(the resistance of the memristor increases)

Thus, we can say that the memristor “remembers” the

history of the applied signal on it .
which give it the name “memory-resistor”

10
iii HP TiO2 Memristor (Basic Operation)

The pinched hysteresis loop shrinks with the

increase in frequency.

At higher frequencies
memristor behaves
closer to the resistor

11
iv Why using Memristor?

There are many advantageous of Memristor that makes

it a very promising candidate in the future of electronic
design:
1. Inherent Non-volatility property can be used in
many innovated circuits and memory devices.
2. Memristor can be designed in the metal layer
over chips and thus save the area on chip.
3. Ability of combining logic operation with
memory cells on the same place in chip.

12
 iv Why using Memristor?

4. They offer excellent scalability

Cell sizes=4F2
5. 3D stacking

4
 v Memristor Market & Research

No. of Publications
600

500

400

300

200

100

0
2010 2011 2012 2013 2014 2015 2016 2017 2018

No. of publications per year about memristors

from 2010 to 2018

Ref: Google Scholar

v Memristor Market & Research

• Ref: State-of-the-art of metal-oxide memristor devices

v Memristor Market & Research

 Memristor market was valued at US$12.693

million in 2017

 And is projected to expand at a CAGR of

57.19% over the forecast period to reach
US$191.501 million by 2023

Source : ResearchAndMarkets.com
Note: Compound annual growth rate (CAGR)
v Memristor Market & Research

**Companies working on memristor research

HP
Fujitsu
IBM
Adesto Technologies Corporation
SK Hynix
Crossbar
Rambus
HRL Laboratories LLC
Knowm, Inc.
2 Memristor Types and Fabrication
ii

i
Memristor
Fabrication iii
Types of
memristors
Fabrication
Challenges

18
i Types of memristors

Types of memristors

Molecular and Ionic Spin-based Memristors

Memristors

Spintronic
Resistive Polymeric Manganite Ferroelectric
Memristor
i Types of memristors

1- Molecular and Ionic Thin Film memristors:

This type of memristors mainly depends on thin
film atomic lattices of different materials that
shows hysteresis under the application of
charge.
• Resistive Memristor
• Polymeric Memristor
• Ferroelectric Memristor

20
ii Memristor Fabrication

Resistive Memristors:

Resistive memristor based on

MIM architecture

21
ii Memristor Fabrication

Switching Machanism (TiO2 Memrisor):

Formation of conductive filament (CF) (a) initial state (b) growth start from
anode to cathode (c) CF completed (d) Reverse voltage causes CF rupture .
ii Memristor Fabrication
2- Spin-based Memristors (Spintronic memristor):

The device is divided into two

ferromagnetic layers:
1. Pinned Layer (PL), and
2. Free Layer (FL).
FL
The magnetization direction in the
pinned layer (PL) is fixed. PL

The position of the domain-wall in

the free layer (FL) can be changed
by passing a driving current,
which changes the overall device
resistance.

23
ii Memristor Fabrication
• In one device resistance occurs when the spin
of electrons in one section of the device points
in a different direction from those in another
section, creating a boundary between the two
sections called a “domain wall”.
• Electrons flowing into the device have a
certain spin, which alters the device’s
magnetization state.
• Changing the magnetization of the device
moves the domain wall and changes its
resistance.

24
ii Memristor Fabrication
Comparison between different memristor types

Memristor
Resistive Spintronic Polymeric Ferroelectric Manganite
Type

ON/OFF Ratio 2000 5 100 300 100

Access Time
~10 ~10 ~25 ~10 ~100
(ns)

Relatively Relatively
Retention Very Long Very Long Long
Long Long

Endurance 109 1016 108 1014 1016

25
 ii Memristor Fabrication

Knowm Memristor
The Knowm Self Directed Channel (SDC)
Memristor material stack is metal ion-
conducting device which relies on Ag+
(Silver ions) movement into channels
within the active layer to change the device
resistance.
iii Fabrication Challenges

1. We need to have in-depth understanding of the

switching mechanism, which will allow for
further structural and performance optimization
of the device.
2. Memristors switching has a strong stochastic
behavior.
iii Fabrication Challenges

3. Memristive phenomenon increases with

scaling down, and thus shows a strong
effect of process variations.

4. Achieving high yield for a cost effective

devices that can be commercialized.
3 Memristor Modeling
ii
i
iii

Nonlinear Ion Drift

Linear Ion Drift
Physic based
model

iv

TEAM Empirical
model
3

29
i Linear Ion Drift Model
 Based on the HP memristor, but can be used as a
general form.
 A uniform electric field across the device is
assumed; thus, there is a linear relationship
between drift–diffusion velocity and the net
electric field.
𝒅𝒘(𝒕) 𝑹𝑶𝑵
= 𝝁𝑽 𝒊(𝒕) (State Equation)
𝒅𝒕 𝑫
• w(t) is a state variable defining the length of the
doped TiO2,

• RON is the equivalent resistance of the memristor

when the whole device is doped,
30
• 𝜇𝑉 is the average ion mobility.
i Linear Ion Drift Model
• According to the linear ion drift; the memristor can be
modeled as a two variable-resistor in series:
𝑤(𝑡) 𝑤(𝑡)
𝑣 𝑡 = 𝑅𝑂𝑁 + 𝑅𝑂𝐹𝐹 1 − 𝑖(𝑡)
𝐷 𝐷

where Ron & ROFF are the equivalent resistance of the memristor when the
whole device is undoped & the whole device is doped respectively.

31
i Linear Ion Drift Model

The memristance M(q) can be calculated as :

𝜇𝑉 𝑅𝑂𝑁
𝑀 𝑞 = 𝑅𝑂𝐹𝐹 1− 2
𝑞(𝑡)
𝐷

Scaling down devices increases

memristive effect

32
 ii Nonlinear Ion Drift Model

 The nanometre dimensions of memristor causes a high electric field

with only applying a few volts.
 The electric field can easily exceed 106V/cm, and it is reasonable to
expect a high nonlinearity in the ionic drift-diffusion.
 To consider this nonlinearity a “window functions F(w/D)”
multiplied by the right-hand side of the state equation.

𝑑𝑤(𝑡) 𝑅𝑂𝑁 𝑤
= 𝜇𝑉 𝑖 𝑡 𝐹
𝑑𝑡 𝐷 𝐷

33
ii Nonlinear Ion Drift Model

Window function

34
ii Physic Based Modeling
Simmons Tunnel Barrier Model (HP Memristor)
ii Physic Based Modeling
Issues of Simmons Tunnel Barrier Model

1. The model is complicated and requires a large

simulation time for large circuits.

2. Causes many convergence issues in simulators.

 iii Empirical Modeling (TEAM Model)

TEAM Model:
Uses a simplified form of the physic-
based model:
The state equation is as follows:
𝒂𝒐𝒇𝒇
𝒊 𝒕
𝒌𝒐𝒇𝒇 −𝟏 . 𝒇𝒐𝒇𝒇 𝒘 ; 𝟎 < 𝒊𝒐𝒇𝒇 < 𝒊
𝒊𝒐𝒇𝒇
𝒅𝒘(𝒕)
= 𝟎 ; 𝒊𝒐𝒏 < 𝒊 < 𝒊𝒐𝒇𝒇
𝒅𝒕
𝒊 𝒕 𝒂𝒐𝒏
𝒌𝒐𝒏 −𝟏 . 𝒇𝒐𝒏 𝒘 ; 𝟎 < 𝒊𝒐𝒏 < 𝒊
𝒊𝒐𝒏
ii Empirical Model

Advantages of TEAM Model:

1- Uses a more accurate state equation
compared to linear and nonlinear ion drift
models.
2- Less convergence issues compared to
physic based models
3- The Verilog-A code is available online.
Disadvantage of TEAM Model :
Because it is an empirical model, it cannot
be used to study process variations.
ii Model Comparison

Linear Ion- NonLinear Simmons

Model Drift Ion-Drift TEAM Tunneling
Barrier

State variable 𝟎≤𝐰≤𝐃 𝟎≤𝐰≤𝐃 𝒂𝒐𝒇𝒇 ≤ 𝐱 ≤ 𝒂𝒐𝒏 𝒙𝒐𝒏 ≤ 𝐱 ≤ 𝒙𝒐𝒇𝒇

Memristance Explicit Intermediate Intermediate Ambiguous

deduction

Accuracy Lowest Low Intermediate Highest

Threshold No No Yes Partially

exist

Probability of Lowest Low Moderate High

convergence

Complexity Simple Intermediate Intermediate Complex

iv Memristor Modeling Challenges

1) Developing robust device models that truly

reflect the operation of memristors and
integrate them with electronic design
automation tools is another major challenge.
2) The device fabrication is not widely
available which limits modeling research
advance.
3) The switching mechanism must be
understood clearly to achieve accurate
models.
iv Memristor Modeling Challenges

4) Each memristor type needs different

physic based model
5) Switching is stochastic, which make it
difficult to model it
6) Current physic-based models have a
known converges issues.
 4 Memristors Potential Applications

ii
iii

Neuromorphic
i Circuits Digital Circuits

iv
Memory Circuits

42
 Memristors Potential Applications

Ref: State-of-the-art of metal-oxide memristor devices

 Memristors Potential Applications

HP memristor roadmap:

44
 i Memory Circuits

5
i Memory Circuits

Crossbar arrays

Schematic of a conventional k x m memristive memory crossbar

i Memory Circuits

R/W Circuits

Yenpo R/W circuit

i Memory Circuits

Sneak Path Problem

48
 i Memory Circuits
Sneak Path Problem

69
i Memory Circuits

PROPOSED SOLUTION (1D1M CROSSBAR)

REDUCES MEMORY DENSITY

50
i Memory Circuits

Memory circuits Challenges

1) Memristor R/W Circuits Design is
challenging (Read can be destructive) .
2) The sneak path problem.
3) To use memristors only, other peripheral
circuits need to be designed using
memristor, or else it need to be
compatible with other technology like the
CMOS technology.
ii Memristors Neuromorphic Applications
The memristor based neuromorphic applications is a
very promising field as the memristor behaviour is
similar to the synapse.
Memristor change of conductance (synapse weight)

1 memristor
=
1 synapse

52
ii Memristors Neuromorphic Applications

• Using memristors as synapses in neuromorphic

circuits can potentially offer both high
connectivity, and high density required for
efficient computing.

• Spike-timing-dependent plasticity (STDP) is a

biological process that adjusts the strength of
connections between neurons in the brain.

• The process adjusts the connection strengths

based on the relative timing of a particular
neuron's output and input action potentials (or
spikes).

53
 ii Memristors Neuromorphic Applications

Memristor Training Circuit

Circuit used to program a single memristor to a target resistance.

71
ii Memristors Neuromorphic Applications

Neural Networks Challenges

• Interconnect (Crossbar Arrays)
• Programming (Training Memristor)
• Communication with classical computing
architectures
 iii Memristors Logic (Logic in Memory)

Memristor-based Ratioed Logic (MRL) Circuits

Schematic of MRL gates (a) OR gate (b) AND gate .

64
 iii Memristors Logic (Logic in Memory)

Memristor-based Implied Logic:

64
 Memristors in Field Programmable Gate
iv Arrays

 Jason Cong introduces a novel FPGA architecture

with memristor-based reconfiguration (mrFPGA).
 The programmable interconnects of mrFPGA
use only memristors and metal wires.
 Thus, the interconnections can be fabricated
over logic blocks, resulting in significant
reduction of overall area and interconnect delay.

64
 Memristors in Field Programmable Gate
iv Arrays

mrFPGA (a) Architecture (b) Design of

connections and switching blocks
59
iv Memristors Analog Applications

• Memristors can be used to implement

programmable analog circuits, Amplifiers,
and oscillators.
• Fine-resolution programmable resistance

60
iv Memristors Analog Applications

A Pulse-coded programmable resistor using

memristor is shown in figure.

Pulse-coded programmable resistor

using a memristor
61
iv Memristors Analog Applications

 M. Affan Zidan presented a memristor-based oscillator

without using any capacitors or inductors.

Memristor based reactance-less oscillator

(Memristor replaced capacitor)
62
 Conclusions

A review of memristor operation, types, fabrication,

1
and modeling is provided.

2 Fabrication, and Modeling Challenges are discussed.

Memristor potential Applications in memories,

3 Neuromorphic, logic, and analog are discussed.
Also some design challenges are discussed.

63
 Conclusions

Device implementation currently waits for robust

4
material and accurate modeling.

If memristors can overcome current fabrication,

5 modeling, and design challenges, it can lead the
future of Electronics Technology.

Memristor potential Applications in memories,

Neuromorphic, logic, and analog are discussed.
Also some design challenges are discussed.

64
Questions??

65
 66
View publication stats