What is the expression of VDS in terms of VGS and VTH that separates the triode and saturation

region of a NMOS device?

Figure 6.22 of text book 1.

A NMOS device remains in saturation for two different lengths L1 and L2. If L1 > L2, change in
ID (ΔID) for same ΔVDS will be smaller for which length?
Figure 6.9 of text book 1.

Increasing the width W of an NMOS device increases or decreases the transconductance ?

Table 6.1 of text book 1.

Draw a small signal model of PMOS diode connected load. Assume λ 0.

Figure (c) of example 6.16 of text book 1.

Increasing the length L of an NMOS device increases or decreases the channel length
modulation coefficient λ?
Figure 6.26 of text book 1.

Given the gain of common-source and common-gate amplifier is same, what is the key
advantage of common-gate amplifier?
Equation 7.103 of text book 1.

What is the key advantage of using source-follower stage?

Equation 7.137 of text book 1.

In which region of operation the MOS transistor is operated for amplifiers?

Saturation region.

List two reasons for using an active current-source load instead of RD.
Section 7.2.2 of text book 1.

Increasing the width W of an NMOS transistor of a common-source amplifier increases or

decreases the voltage gain?
Equation 7.35 of text book 1.