Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
CT2 Solution
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Temperature Dependence of Resistivity: b) Real Metals and Alloys
• Let us consider the case of an alloy.
• Randomly distributed impurity atoms: act
as scattering centers.
• τT : mean time between scattering due to
thermal vibrations alone. • τI : mean time between scattering due to collisions with impurities alone. Principles of Electronic Materials and Devices (3E), by S. O. Kasap
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Figure 2.6 Page 126 Temperature Dependence of Resistivity: b) Real Metals and Alloys • τT : mean time between scattering due to thermal vibrations alone. • τI : mean time between scattering due to collisions with impurities alone. • 1/τT : probability of scattering due to thermal vibrations alone. • 1/τI : probability of scattering due to collisions with impurities alone. • 1/τ : net probability of scattering. Principles of Electronic Materials and Devices (3E), by S. O. Kasap
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Figure 2.6 Page 126 Temperature Dependence of Resistivity: b) Real Metals and Alloys
Principles of Electronic Materials
and Devices (3E), by S. O. Kasap
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Figure 2.6 Page 126 Temperature Dependence of Resistivity: b) Real Metals and Alloys
Principles of Electronic Materials
and Devices (3E), by S. O. Kasap
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Figure 2.6 Page 126 Temperature Dependence of Resistivity: b) Real Metals and Alloys: TCR TCR: Temperature Coefficient of Resistivity. A small normalized change around a reference temperature.
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
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Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU