Summer 2020

EEE 3107 / EEE 301

Electrical Properties of
Materials

Dr. Sadid Muneer

Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU

Crystal Direction in Cubic Crystal System
z

x
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Crystal Direction in Cubic Crystal System
z

x
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Crystal Direction in Cubic Crystal System

Principles of Electronic Materials

and Devices (3E), by S. O. Kasap
Figure 1.40c Page 57
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Crystal Planes

Why?
• Surface is immensely important for
semiconductor devices.
• Ex: higher planar concentration
means higher oxide growth.

Principles of Electronic Materials

and Devices (3E), by S. O. Kasap
Figure 1.41a Page 59
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Crystal Planes

How?
• Find the x, y, z intercepts using a, b, c
• Get rid of a, b, c
• Take reciprocal
• Multiply or divide to get the smallest
integers
• Write in parentheses without comma
• Use bar for negative integers
• These numbers are called Miller
Principles of Electronic Materials
indices. and Devices (3E), by S. O. Kasap
Figure 1.41a Page 59
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Crystal Planes in Cubic Crystal System
z

x
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Crystal Planes in Cubic Crystal System
z

x
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Family of Planes

Principles of Electronic Materials

and Devices (3E), by S. O. Kasap
Figure 1.41b Page 59
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Crystal Planes in Cubic Crystal System
z

x
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Crystal Planes in Cubic Crystal System
z

x
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Crystal Planes in Cubic Crystal System
z

x
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Family of Planes

Principles of Electronic Materials

and Devices (3E), by S. O. Kasap
Figure 1.41b Page 59
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Planar Concentration

• Planar concentration, n(hkl) is the number of

atoms per unit area on a given plane (hkl).
• To calculate n(hkl) we consider a bounded
area A in the unit cell.
• Only atoms whose centers line on A are
taken in the calculation. BCC crystal structure

Principles of Electronic Materials

and Devices (3E), by S. O. Kasap
Figure 1.32 Page 51
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Calculation of Planar Concentration of BCC

Problem: Niobium (Nb) has the

BCC crystal with lattice
parameter a = 0.3294 nm.
Calculate n(100).

(100) Plane of BCC BCC crystal structure

Principles of Electronic Materials

and Devices (3E), by S. O. Kasap
Figure 1.32 Page 51
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Calculation of Planar Concentration of BCC

Problem: Niobium (Nb) has the

BCC crystal with lattice
parameter a = 0.3294 nm.
Calculate n(110).

(110) Plane of BCC BCC crystal structure

Principles of Electronic Materials

and Devices (3E), by S. O. Kasap
Figure 1.32 Page 51
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
Calculation of Planar Concentration of BCC

Problem: Niobium (Nb) has the

BCC crystal with lattice
parameter a = 0.3294 nm.
Calculate n(111).

(111) Plane of BCC BCC crystal structure

Principles of Electronic Materials

and Devices (3E), by S. O. Kasap
Figure 1.32 Page 51
Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU
 Thanks!

Copyright: Dr. Sadid Muneer, Assistant Professor, Dept. of EEE, UIU