PROBLEMS 2 1 9

2 1 8 CHAPTERS DIODES

3V 3V
• A silicon diode conducts a negligible current until the for- a In p-type silicon there is an overabundance of holes (pos- +3V 1
ward voltage is at least 0.5 V. Then the current increases itively charged carriers), while in n-type silicon electrons
+3 V A
rapidly, with the voltage drop increasing by 60 mV to I*
are abundant.
120 mV (depending on the value of n) for every decade 1
M A carrier-depletion region develops at the interface in np 1 0 kO
of current change. n

junction, with the n side positively charged and thep side -o V

-o V
• In the reverse direction, a silicon diode conducts a cur- negatively charged. The voltage difference resulting i s

9
rent on the order of 10~ A. This current is much greater called the barrier voltage. 10 kft 10 kil
than I and increases with the magnitude of reverse
s I
H A diffusion current I flows in the forward direction (car-
D
voltage.
ried by holes from the p side and electrons from the
-3 V -3 V
H Beyond a certain value of reverse voltage (that depends n side), and a current I flows in the reverse direction (car-
s -3 V
ried by thermally generated minority carriers). In an open- -3 V (d)
on the diode) breakdown occurs, and current increases (c)
circuited junction, I = I and the barrier voltage is denoted (b)
rapidly with a small corresponding increase in voltage. D s
(a)
V . Vo is also called the junction built-in voltage.
0

• Diodes designed to operate in the breakdown region are FIGURE P 3 . 2

called zener diodes. They are employed in the design of B Applying a reverse-bias voltage | V] to a pn junction causes
voltage regulators whose function is to provide a constant the depletion region to widen, and the barrier voltage in- 3V
dc voltage that varies little with variations in power supply creases to (V + | V|). The diffusion current decreases and
0 Di A
voltage and/or load current. a net reverse current of (I - I ) flows.s D
+ 1 V<
B Applying a forward-bias voltage | V| to a pn junction causes l \ S 2 ki'l
• A hierarchy of diode models exists, with the selection of
the depletion region to become narrower, and the barrier +3 V'
an appropriate model dictated by the application.
voltage decreases to ( V - | V|). The diffusion current in-
0 D 2
-ov
• In many applications, a conducting diode is modeled as creases, and a net forward current of (I - I ) flows.
D s
/ ? 2 kii + 1 V<
having a constant voltage drop, usually approximately B For a summary of the diode models in the forward region,
0.7 V. refer to Table 3.1. -3 V o -
D,
• A diode biased to operate at a dc current I has a small-
D B For a summary of the relationships that govern the phys- -3 V
signal resistance r =
d nV /I .
T D ical operation of the injunction, refer to Table 3.2. (b)
(a)
S The silicon junction diode is basically apn junction. Such
FIGURE P3.3
a junction is formed in a single silicon crystal.
£>i D
£>i D
2

2
VjO- —Of^ -O v0
-o %
v,o -W— -o v 0
VjO W W-
•IkO
^ l k Q
•IkO

(c)
(b)
(a)
SECTION 3 . 1 : THE IDEAL DIODE 3 . 3 For the circuits shown in Fig. P3.3 using ideal diodes,
3.1 An A A flashlight cell, whose Thévenin equivalent is find the values of the labeled voltages and currents.
a voltage source of 1.5 V and a resistance of 1 Q, is 3.4 In each of the ideal-diode circuits shown in Fig. P3.4, v0 vi
connected to the terminals of an ideal diode. Describe VjO- —ov 0

V[ is a 1-kHz, 10-V peak sine wave. Sketch the waveform

i
two possible situations that result. What are the diode resulting at v . What are its positive and negative peak
0

current and terminal voltage when (a) the connection values? kn

is between the diode cathode and the positive terminal of D 2

the battery and (b) the anode and the positive terminal are 3.5 The circuit shown in Fig. P3.5 is a model for a battery
connected? charger. Here is a 10-V peak sine wave, D , and D are ideal 2
(I)
diodes, I is a 100-mA current source, and B is a 4.5-V battery. (e)
(d)
3 . 2 For the circuits shown in Fig. P3.2 using ideal diodes, Sketch and label the waveform of the battery current i . What B

find the values of the voltages and currents indicated. is its peak value? What is its average value? If the peak value F I G U R E P 3 . 4 (Continued)
 220 CHAPTER 3 DIODES PROBLEMS 2 2 1

D3.7 For the logic gate of Fig. 3.5(a), assume ideal diodes 0 3 . 1 1 For the rectifier circuit of Fig. 3.3(a), let the input
and input voltage levels of 0 V and +5 V. Find a suitable value sine wave have 120-V rms value and assume the diode to be
ideal. Select a suitable value for R so that the peak diode cur-
IkO fori? so that the current required from each of the input signal
IkO rent does not exceed 50 mA. What is the greatest reverse
-Ov sources does not exceed 0.1 mA.
n
-Ov n voltage that will appear across the diode?
0 3 . 8 Repeat Problem 3.7 for the logic gate of Fig. 3.5(b).
2 A
A 2 SO, 3 . 1 2 Consider the rectifier circuit of Fig. 3.3 in the event
3.9 Assuming that the diodes in the circuits of Fig. P3.9 that the input source v, has a source resistance R . For the case
s

are ideal, find the values of the labeled voltages and R = R and assuming the diode to be ideal, sketch and clearly
s

label the transfer characteristic v versus v,.

0
currents.
(g) (h) (i) +5V +5V 3 . 1 3 A square wave of 6-V peak-to-peak amplitude and zero
A average is applied to a circuit resembling that in Fig. 3.3(a) and
employing a 100-£2 resistor. What is the peak output voltage
+ 15 V . 10 k ß that results? What is the average output voltage that results?
, 5 kft
What is the peak diode current? What is the average diode cur-
rent? What is the maximum reverse voltage across the diode?

3 . 1 4 Repeat Problem 3.13 for the situation in which the

a S a 2 a average voltage of the square wave is 2 V while its peak-to-
-s>h peak value remains at 6 V.
- o y -OV
* D 3 . 1 S Design a battery-charging circuit, resembling that
ikn in Fig. 3.4 and using an ideal diode, in which current flows to
.10 kft . 5 kft the 12-V battery 20% of the time and has an average value of
:ikfj 100 mA. What peak-to-peak sine-wave voltage is required?
What resistance is required? What peak diode current flows?
t
What peak reverse voltage does the diode endure? If resistors
5V
- 5V can be specified to only one significant digit and the peak-to-
(j) (k) (a) peak voltage only to the nearest volt, what design would you
(b)
choose to guarantee the required charging current? What
FIGURE P3.4 (Continued) fraction of the cycle does diode current flow? What is the
FIGURE P 3 . 9
average diode current? What is the peak diode current? What
peak reverse voltage does the diode endure?
3.10 Assuming that the diodes in the circuits of Fig. P3.10
are ideal, utilize Thevenin's theorem to simplify the cir-
Ifbecome? ^ ^ ^ ^ ^ ^ ^ ^ t 0 d e D
° t e t h e W
"°" g h V a l u e
^ > t 0 d e n o t e l o w v a l u e
3 . 1 6 The circuit of Fig. P3.16 can be used in a signalling sys-
o i ecome. prepare a table with four columns including all possible input cuits and thus find the values of the labeled currents and
B
tem using one wire plus a common ground return. At any
combinations and the resulting values of X and Y. What logic voltages.
moment, the input has one of three values: +3 V, 0 V, - 3 V.
function is X of A and S ? What logic function is Y of A and B?
What is the status of the lamps for each input value? (Note that
For what values of A and 5 do X and Fhave the same value?
the lamps can be located apart from each other and that there
For what values of A and B do X and Y have opposite values? + 9V +9V +5V
may be several of each type of connection, all on one wire!).
A
0' a
a

y=
r+3 v
-jo o-
A o- 10 kft '
~W T o v I O K N | S10 k n -3 v
0

i
a a
Aft Dz 25 Ideal d i o d e s

a
Bo- -0- H3f -OV
a - V +
A o - ¡0 -OX

0- 20 kft' : 20 kft 10 k O io k n (§) (È) 3

" V l a m
P s

FIGURE P 3 . 5
S o -
-KJ-
a
! Ï
red green
(a) (b) (a) (b)
3 . 6 The circuits shown in Fig. P3.6 can function as logic
gates for input voltages are either high or low. Using " 1 " FIGURE P 3 . 6 FIGURE P 3 . 1 0 FIGURE P 3 . 1 6
 222 l^J CHAPTER 3 DIODES PROBLEMS ,'.„•! 223

SECTION 3 . 2 : TERMINAL CHARACTERISTICS current source, which varies from 0.5 mA to 1.5 mA, what
3 . 2 7 Several diodes having a range of sizes, but all with n=l,
OF JUNCTION DIODES junction voltage might be expected? What additional voltage

0
are measured at various temperatures and junction currents as
change might be expected for a temperature variation of +25°C?
3 . 1 7 Calculate the value of the thermal voltage, V , at -40°C,
T noted below. For each, estimate the diode voltage at 1 mA
0°C, +40°C, and +150°C. At what temperature is V exactly T
and25°C. * 3 . 3 1 As an alternative to the idea suggested in Prob­
25 mV? lem 3.30, the designer considers a second approach to pro­
(a) 620 mV at 10 fiA and 0°C
-OVn ducing a relatively constant small voltage from a variable
3 . 1 8 At what forward voltage does a diode for which n = 2 (b) 790 mV at 1 A and 50°C
current supply: It relies on the ability to make quite accurate
conduct a current equal to 10007 ? In terms of I , what current (c) 590 mV at 100 /M. and 100°C
s s
copies of any small current that is available (using a process
flows in the same diode when its forward voltage is 0.7 V? (d) 850 mV at 10 mA and - 5 0 ° C
(e) 700 mV at 100 mA and 75°C called current mirroring). The designer proposes to use this
3 . 1 9 A diode for which the forward voltage drop is 0.7 V at idea to supply two diodes of different junction areas with the
1.0 mA and for which n = 1 is operated at 0.5 V. What is the * 3 . 2 8 In the circuit shown in Fig. P3.28, D is a large-area same current and to measure their junction-voltage differ­
l

value of the current?

3 . 2 © A particular diode, for which n = 1, is found to con­

duct 5 mA with a junction voltage of 0.7 V. What is its satu­
t high-current diode whose reverse leakage is high and inde­
pendent of applied voltage while D is a much smaller, low-
2

current diode for which n = 1. At an ambient temperature of

ence. Two types of diodes are available; for a forward volt­
age of 700 mV, one conducts 0.1 mA while the other conducts
1 A. Now, for identical currents in the range of 0.5 m A to
1.5 mA supplied to each, what range of difference voltages
20°C, resistor fl, is adjusted to make V = V = 520 mV. Sub­
Rl 2
ration current I l What current will flow in this diode if the
s
FIGURE P 3 . 2 3 result? What is the effect of a temperature change of ±25°C
sequent measurement indicates that R is 520 kQ. What do
t
junction voltage is raised to 0.71 V? To 0.8 V? If the junction on this arrangement? Assume n = 1.
of V results? To obtain a value for V of 50 mV, what current you expect the voltages V and V, to become at 0°C and at
Rl
voltage is lowered to 0.69 V? To 0.6 V? What change injunc­
I is needed?
2 40°C?
tion voltage will increase the diode current by a factor of 10? SECTION 3 . 3 : MODELING THE DIODE FORWARD
3 . 2 1 The following measurements are taken on particular CHARACTERISTIC
+ 10V
junction diodes to which V is the terminal voltage and / i s the
diode current. For each diode, estimate values of I and the
terminal voltage at 1% of the measured current for n = 1 and
for n = 2. Use V = 25 mV in your computations.
T
s

0 h
10 mA
4 * 3 . 3 2 Consider the graphical analysis of the diode circuit
of Fig. 3.10 with V = 1 V, R = 1 k£l, and a diode having I =
15
DD

10"" A and n = 1. Calculate a small number of points on the

diode characteristic in the vicinity of where you expect the
s

(a) V= 0.700 V at / = 1.00 A load line to intersect it, and use a graphical process to refine
(b)
(c)
(d)
V=
y=
V=
0.650Vat/ =
0.650Vat/=
0.700 V a t / =
1.00mA
10^A
10 mA
A
ill -o
+
your estimate of diode current. What value of diode current
and voltage do you find? Analytically, find the voltage corre­
sponding to your estimate of current. By how much does it

3 . 2 2 Listed below are the results of measurements taken on

several different junction diodes. For each diode, the data
provided are the diode current /, the corresponding diode
h
0
2mA 1

I +
v 2
differ from the graphically estimated value?

3 . 3 3 Use the iterative-analysis procedure to determine the

diode current and voltage in the circuit of Fig. 3.10 for V = DD

voltage V, and the diode voltage at a current 1/10. In each 15

1 V, R = 1 kf2, and a diode having I = 10~ A and n = 1.
FIGURE P3.25 s

case, estimate I , n, and the diode voltage at 10/.

s

FIGURE P 3 . 2 8 3 . 3 4 A "1-mA diode" (i.e., one that has v = 0 . 7 V at i =

(a) 10.0 mA, 700 mV, 600 mV 3 . 2 6 For the circuit shown in Fig. P3.26, both diodes are D D

(b) 1.0 mA, 700 mV, 600 mV identical, conducting 10 mA at 0.7 V and 100 mA at 0.8 V. 1 mA) is connected in series with a 200-Q. resistor to a 1.0-V
(c) 10 A, 8 0 0 m V , 7 0 0 m V Find the value of R for which V = 80 mV. supply.
3.29 When a 15-A current is applied to a particular diode,
(d) 1 mA, 700 mV, 580 mV
it is found that the junction voltage immediately becomes (a) Provide a rough estimate of the diode current you would
(e) 10 fiA, 700 mV, 640 mV
700 mV. However, as the power being dissipated in the diode expect.
3 . 2 3 The circuit in Fig. P3.23 utilizes three identical diodes raises its temperature, it is found that the voltage decreases (b) If the diode is characterized by n = 2, estimate the diode
14
having n = 1 and I = 1 0 ~ A. Find the value of the current /
s
and eventually reaches 580 mV. What is the apparent rise in current more closely using iterative analysis.
required to obtain an output voltage V = 2 V. If a current of
0
junction temperature? What is the power dissipated in the
3 . 3 5 A collection of circuits,-which are variants of that
1 mA is drawn away from the output terminal by a load, what diode in its final state? What is the temperature rise per watt
shown in Fig. 3.10, are listed below. For each diode used, the
is the change in output voltage? of power dissipation? (This is called the thermal resistance.)
measured junction current I at junction voltage V is pro­
0 0

3 . 2 4 A junction diode is operated in a circuit in which it is vided, along with the change of junction voltage AV mea­
* 3 . 3 0 A designer of an instrument that must operate over a
supplied with a constant current /. What is the effect on the sured when the current is increased 10-fold. For each circuit,
wide supply-voltage range, noting that a diode's junction-
forward voltage of the diode if an identical diode is connected find the diode current I and diode voltage V that result,
D D
voltage drop is relatively independent of junction current,
in parallel? Assume n = 1. using the diode exponential equation and iteration. (Hint: To
considers the use of a large diode to establish a small rela­
reduce your workload, notice the very special relation between
tively constant voltage. A power diode, for which the nomi­
3 . 2 5 In the circuit shown in Fig. P3.25, both diodes have the circuit and diode parameters in many—but not all—cases.
nal current at 0.8 V is 10 A, is available. Furthermore, the
n = 1, but D has 10 times the junction area of D . What value
1 2 Finally, note that using such relationships, or approximations
FIGURE P 3 . 2 6 designer has reason to believe that n = 2. For the available
 PROBLEMS 225
2 2 4 . !
CHAPTER 3 DIODES

3 . 5 5 In the attenuator circuit of Fig. P3.54, let R = 10 k Q .s

does this correspond (consider both positive and negative

to them, can often make your first pass at a circuit design much uncertain whether to use 0.7 V or 0.6 V for V . For what value
D
The diode is a 1-mA device; that is, it exhibits a voltage
easier and faster!) of V is the difference in the calculated values of current only signals) for: drop of 0.7 V at a dc current of 1 mA and has n = 1. For small
1%? For V = 2 V and R = 1 k i i , what two currents would input signals, what value of current / is needed for v /v = a s
(a) « = 1?
Circuit V W DD ff.(kQ) /„ (mA) l/ (mV)
0 AV(mV) result from the use of the two values of V 1 What is their
D
0.50? 0.10? 0.01? 0.001? In each case, what is the largest
(b) n = 2?
percentage difference? input signal that can be used while ensuring that the signal
a 10.0 9.3 1.0 700 100 For each case, what is the maximum allowable voltage signal component of the diode current is limited to +10% of its dc
b 3.0 2.3 1.0 700 100 D 3 . 4 3 A designer has a relatively large number of diodes (positive or negative) if the current change is to be limited current? What output signals correspond?
c 2.0 2.0 10 700 100 for which a current of 20 mA flows at 0.7 V and the 0.1-V/
d 2.0 2.0 1.0 700 100 to 10%?
decade approximation is relatively good. Using a 10-mA cur­ 3 . 5 6 In the capacitor-coupled attenuator circuit shown in
e 1.0 0.30 10 700 100 3.53 In a particular circuit application, ten "20-mA diodes"
rent source, the designer wishes to create a reference voltage Fig. P 3 . 5 6 , 1 is a dc current that varies from 0 m A to 1 mA,
f 1.0 0.30 10 700 60 (a 20-mA diode is a diode that provides a 0.7-V drop when
of 1.25 V. Suggest a combination of series and parallel diodes D and D are diodes with n = 1, and C and C are large cou­
g 1.0 0.30 10 700 120 the current through it is 20 mA) connected in parallel operate
X 2 X 2

h 0.5 30 10 700 100 that will do the job as well as possible. How many diodes are pling capacitors. For very small input signals, find the values
needed? What voltage is actually achieved? at a total current of 0.1 A. For the diodes closely matched,
of the ratio v /v 0 tfor I equal to:
with n = 1, what current flows in each? What is the corre­
0 3 . 3 6 Assuming the availability of diodes for which v = D 3 . 4 4 Consider the half-wave rectifier circuit of Fig. 3.3(a) sponding small-signal resistance of each diode and of the (a) QuiA
0.7 V at i = 1 mA and n = 1, design a circuit that utilizes four
D with R = 1 kQ, and the diode having the characteristics and combination? Compare this with the incremental resistance (b) 1/iA
diodes connected in series, in series with a resistor R con­ the piecewise-linear model shown in Fig. 3.12 (V = 0.65 V,
m of a single diode conducting 0.1 A. If each of the 20-mA (c) 10 fiA
nected to a 10-V power supply. The voltage across the string r = 20 Q,). Analyze the rectifier circuit using the piecewise-
D diodes has a series resistance of 0.2 Q, associated with the (d) 100 fiA
of diodes is to be 3.0 V. linear model for the diode, and thus find the output voltage wire bonds to the junction, what is the equivalent resistance (e) 500 fiA
v as a function of v,. Sketch the transfer characteristic
0 of the 10 parallel-connected diodes? What connection resis­ (f) 600 juA
3 . 3 7 Find the parameters of a piecewise-linear model of a v versus v for 0 < v < 10 V. For v being a sinusoid with
0 t I t tance would a single diode need in order to be totally equiva­ (g) 900 ,uA
diode for which v = 0.7 V at i = 1 m A and n = 2. The model
D D
10 V peak amplitude, sketch and clearly label the waveform lent? (Note: This is why the parallel connection of real diodes (h) 990 fiA
is to fit exactly at 1 mA and 10 mA. Calculate the error in of v . (i) 1 mA
0 can often be used to advantage.)
millivolts in predicting v using the piecewise-linear model
D

at i = 0.5, 5, and 14 mA.

D 3 . 4 S Solve the problems in Example 3.2 using the constant- 3 . 5 4 In the circuit shown in Fig. P3.54,1 is a dc current and
voltage-drop (V = 0.7 V) diode model. v is a sinusoidal signal. Capacitors C and C are very large;

©
s t 2
D

3 . 3 8 Using a copy of the diode curve presented in Fig. 3.12,
approximate the diode characteristic using a straight line that
exactly matches the diode characteristic at both 10 mA and
1 mA. What is the slope? What is r 7 What is V ? D D0
3 . 4 6 For the circuits shown in Fig. P3.2, using the constant-
voltage-drop (V = 0.7 V) diode model, find the voltages and
D
currents indicated.
their function is to couple the signal to and from the diode but 11 mA
block the dc current from flowing into the signal source or the
load (not shown). Use the diode small-signal model to show
that the signal component of the output voltage is

3 . 3 9 On a copy of the diode characteristics presented in 3 . 4 7 For the circuits shown in Fig. P3.3, using the constant- 2 />, &D 2

Fig. 3.12, draw a load line corresponding to an external cir­ voltage-drop (V = 0.7 V) diode model, find the voltages and s
D
nV T + IR,
cuit consisting of a 0.9-V voltage source and a 100-O. resis­ currents indicated.
If v = 10 mV, find v for / = 1 mA, 0.1 mA, and 1 fiA. Let R - Vf o -
tor. What are the values of diode drop and loop current you s 0 s

3 . 4 8 For the circuits in Fig. P3.9, using the constant-voltage- 1 k h and n = 2. At what value of / does v become one-half
estimate using: 0

drop (V = 0.7 V) diode model, find the values of the labeled

D
of v l Note that this circuit functions as a signal attenuator
s

(a) the actual diode characteristics?
(b) the two-segment model shown?
3 . 4 ® For the diodes characterized below, find r and V ,
the elements of the battery-plus-resistor model for which the
straight line intersects the diode exponential characteristic at
currents and voltages. with the attenuation factor controlled by the value of the dc
3 . 4 9 For the circuits in Fig. P3.10, utilize Thevenin's theo­ current I.
D D0 rem to simplify the circuits and find the values of the labeled
currents and voltages. Assume that conducting diodes can be
FIGURE P3.56
represented by the constant-voltage-drop model (V = 0.7 V).
D

O.lx and lOx the specified diode current.

(a) V = 0 . 7 V a t / = l m A a n d n = l
D D
(b) V = 0 . 7 V a t / = l A a n d n = l
o D
(c) V = 0 . 7 V a t / = 1 0 u A a n d r a = l
c o
SI3.5© Repeat Problem 3.11, representing the diode by its
constant-voltage-drop (V = 0.7 V) model. How different is
D
©' c.
For the current in each diode in excess of 10 /lA, what is the
largest input signal for which the critical diode current
the resulting design?
remains within 10% of its dc value?
J -o
3 . 5 1 Repeat the problem in Example 3.1 assuming that the + * 3 . 5 7 In the circuit shown in Fig. P3.57, diodes D through T

3 . 4 1 The diode whose characteristic curve is shown in diode has 10 times the area of the device whose characteris­ Z> are identical. Each has n = 1 and is a ''1-mA diode"; that
4

Fig. 3.15 is to be operated at 10 mA. What would likely be a tics and piecewise-linear model are displayed in Fig. 3.12. is, it exhibits a voltage drop of 0.7 V at a 1-mA current,
suitable voltage choice for an appropriate constant-voltage-drop Represent the diode by its piecewise-linear model (v = D
(a) For small input signals (e.g., 10 m V peak), find values of
model? 0.65 + 2i ). D

the small-signal transmission v /v 0 { for various values of I:

3 . 4 2 A diode operates in a series circuit with R and V. 3 . 5 2 The small-signal model is said to be valid for voltage 0 fiA, 1 fiA, 10 fiA, 100 fiA, 1 mA, and 10 mA.
A designer, considering using a constant-voltage model, is FIGURE P 3 . 5 4
variations of about 10 mV. To what percentage current change
 226 CHAPTER 3 DIODES
o v.
10 m
FIGURE P 3 . 5 7
(b) For a forward-conducting diode, what is the largest signal-
voltage magnitude that it can support while the corresponding
signal current is limited to 10% of the dc bias current. Now, for
the circuit in Fig. P3.57, for 10-mV peak input, what is the
smallest value of I for which the diode currents remain within
±10% of their devalue?
(c) For 1=1 mA, what is the largest possible output signal
for which the diode currents deviate by at most 10% of their
dc values? What is the corresponding peak input?
* 3 . 5 8 In the circuit shown in Fig. P 3 . 5 8 , 1 is a dc current
and vi is a sinusoidal signal with small amplitude (less than
10 mV) and a frequency of 100 kHz. Representing the diode
by its small-signal resistance r , which is a function of I,
d
sketch the circuit for determining the sinusoidal output volt­
age V„ and thus find the phase shift between V, and V . Find0
the value of I that will provide a phase shift of - 4 5 ° , and find
the range of phase shift achieved as / is varied over the range
of 0.1 to 10 times this value. Assume n = 1.
This quantity is known as the load regulation and is usually
expressed in mV/mA. '
(b) If the value of R is selected such that at no load the volt­
age across the diode is 0.7 V and the diode current is I , show
that the expression derived in (a) becomes
FIGURE P 3 . 5 8
Select the lowest possible value for I that results in a load
regulation < 5 mV/mA. Assume n = 2. If V is nominally 10 V,
what value of R is required? Also, specify the diode required.
PROBLEMS : 2 2 7
* 3 . 5 9 Consider the voltage-regulator circuit shown in
Ftg. P3.59. The value o f * is selected to obtain an output voir (c) Generalize the expression derived in (b) for the case of SECTION 3 . 4 : OPERATION I N THE REVERSE
age V (across the diode) of 0.7 V.
0
diodes connected in series and 7? adjusted to obtain V =0 BREAKDOWN REGION—ZENER DIODES
0.7« V at no load. 3 . 6 4 Partial specifications of a collection of zener diodes
(a) Use the diode small-signal model to show that the chanse are provided below. Identify the missing parameter, and esti­
+
D 3.61 Design a diode voltage regulator to supply 1.5 V to a
m output voltage corresponding to a change of 1 V in V i s
mate its value. Note from Fig. 3.21 that V = V .
150-°- load. Use two diodes specified to have a 0.7-V drop at ZK zo
AV . r
a current of 10 mA and n = 1. The diodes are to be connected (a) V = 10.0 V, V = 9.6 V, and I^- = 50 mA
z ZK
+ +
to a +5-V supply through a resistor R. Specify the value for R. (b) I = 10 mA, V = 9.1 V, and r = 30 i i
AV V + nV ~Q.l T
ZT z z
What is the diode current with the load connected? What is the (c) r = 2 i i , V = 6.8 V, and V = 6.6 V
z z ZK
This quantity is known as the line regulation and is usually increase resulting in the output voltage when the load is dis­ (d) V = 18 V, 7 = 5 mA, and V = 17.2 V
z z r ZK
expressed in mV/V. connected? What change results if the load resistance is (e) 7 = 200 mA, V = 7.5 V, and r = 1.5 i i
z r z z
(b) Generalize tire expression above for the case of m diodes reduced to 100 i i ? To 75 £2? To 50 £2?
connected in series and the value of R adjusted so that the Assuming that the power rating of a breakdown diode is
* D 3 . 6 2 A voltage regulator consisting of two diodes in
voltage across each diode is 0.7 V (and V = 0.7m V). 0
established at about twice the specified zener current (7 ), zr
+
series fed with a constant-current source is used as a what is the power rating of each of the diodes described
(c) Calculate the value of line regulation for the case V =
replacement for a single carbon-zinc cell (battery) of nomi­ above?
T O V (nominally) and (i) m = 1 and (ii) m = 3. Use n = 2.
nal voltage 1.5 V. The regulator load current varies from 2 mA
to 7 mA. Constant-current supplies of 5 mA, 10 mA, and 0 3 . 6 5 A designer requires a shunt regulator of approxi­
15 mA are available. Which would you choose, and why? mately 20 V. Two kinds of zener diodes are available: 6.8-V
What change in output voltage would result when the load devices with r of 10 i i and 5.1-V devices with r of 30 i i .
z z
current varies over its full range? Assume that the diodes For the two major choices possible, find the load regula­
have n = 2. tion. In this calculation neglect the effect of the regulator
R.
resistance R.
* 3 . 6 3 A particular design of a voltage regulator is shown
—o in Fig. P3.63. Diodes D and D are 10-mA units; that is,
X 2
3 . 6 6 A shunt regulator utilizing a zener diode with an
each has a voltage drop of 0.7 V at a current of 10 mA. Each incremental resistance of 5 i i is fed through an 82-ii resjstor.
has n = l. If the raw supply changes by 1.3 V, what is the corresponding
change in the regulated output voltage?
(a) What is the regulator output voltage V with the 150-£i
0
load connected? 3 . 6 7 A 9.1-V zener diode exhibits its nominal voltage at a
(b) Find V with no load.
0
test current of 28 mA. At this current the incremental resis­
FIGURE P 3 . 5 9 (c) With the load connected, to what value can the 5-V sup­ tance is specified as 5 i i . Find V of the zener model. Find
z0
ply be lowered while maintaining the loaded output voltage the zener voltage at a current of 10 mA and at 100 mA.
* D 3 . 6 0 Consider the voltage-regulator circuit shown in within 0.1 V of its nominal value?
Fig P3.59 under the condition that a load current I is drawn D 3 . 6 8 Design a 7.5-V zener regulator circuit using a 7.5-V
L
(d) What does the loaded output voltage become when the
from the output terminal. zener specified at 12 mA. The zener has an incremental resis­
5-V supply is raised by the same amount as the drop found
(a) If the value of I is sufficiently small so that the corre­ in(c)? tance r = 30 i i and a knee current of 0.5 mA. The regulator
z
L
sponding change in regulator output voltage AV is small 0 (e) For the range of changes explored in (c) and (d), by what operates from a 10-V supply and has a 1.2-kii load. What is
enough to justify using the diode small-signal model, show percentage does the output voltage change for each percent­ the value of R you have chosen? What is the regulator output
that age change of supply voltage in the worst case? voltage when the supply is 10% high? Is 10% low? What is the
output voltage when both the supply is 10% high and the load
^ = -o-//*) d +5 V
is removed? What is the smallest possible load resistor that can
be used while the zener operates at a current no lower than
the knee current while the supply is 10% low?
* D 3 . 6 9 Provide two designs of shunt regulators utilizing
180 i i
the 1N5235 zener diode, which is specified as follows: V = z
D 6.8 V and r = 5 i i for I = 20 mA; at I = 0.25 mA (nearer the
z z z
knee), r = 750 i i . For both designs, the supply voltage is
z
nominally 9 V and varies by ± 1 V. For the first design, assume
AV .
r
+
V~ 0.7 that the availability of supply current is not a problem, and
+ V > 150 i i
D V • 0.7 + H V r
0
thus operate the diode at 20 mA. For the second design,
D
+
° ' l -1 assume that the current from the raw supply is limited, and
therefore you are forced to operate the diode at 0.25 mA. For
the purpose of these initial designs, assume no load. For each
FIGURE P 3 . 6 3 design find the value of R and the line regulation.
 2 2 8 O CHAPTER 3 DIODES
* D 3 . 7 0 A zener shunt regulator employs a 9.1-V zener
diode for which V = 9.1 V at I = 9 mA, with r = 30 Q and
z z
I = 0.3 mA. The available supply voltage of 15 V can vary
ZK
as much as ±10%. For this diode, what is the value of V 1
For a nominal load resistance R of 1 kQ and a nominal zener
current of 10 mA, what current must flow in the supply resis­
tor R7 For the nominal value of supply voltage, select a value
for resistor R, specified to one significant digit, to provide at
least that current. What nominal output voltage results? For a
±10% change in the supply voltage, what variation in output
voltage results? If the load current is reduced by 50%, what
increase in V results? What is the smallest value of load
0 rectifier transfer characteristic.
resistance that can be tolerated while maintaining regulation
when the supply voltage is low? What is the lowest possible
output voltage that results? Calculate values for the line regu­
lation and for the load regulation for this circuit using the
numerical results obtained in this problem.
* D 3 . 7 1 It is required to design a zener shunt regulator to pro­
vide a regulated voltage of about 10 V. The available 10-V, 1-W
zener of type 1N4740 is specified to have a 10-V drop at a test
current of 25 mA. At this current its r is 7 Q. The raw supply
available has a nominal value of 20 V but can vary by as much
as ±25%. The regulator is required to supply a load current of
0 mA to 20 mA. Design for a minimutn zener current of 5 mA.
(a) FindV . z0
(b) Calculate the required value of R.
(c) Find the line regulation. What is the change in V ex­
pressed as a percentage, corresponding to the ±25% change
in V ?5
(d) Find the load regulation. By what percentage does V
change from the no-load to the full-load condition?
(e) What is the maximum current that the zener in your
design is required to conduct? What is the zener power dissi­
pation under this condition?
SECTION 3 . 5 : RECTIFIER CIRCUITS
3.72 Consider the half-wave rectifier circuit of Fig. 3.25(a)
with the diode reversed. Let v be a sinusoid with 15-V peak
s
amplitude, and let R = 1.5 kQ. Use the constant-voltage-drop
diode model with V = 0.7 V. D
(a) Sketch the transfer characteristic.
(b) Sketch the waveform of v .
0 voltage of:
(c) Find the average value of v . 0
(d) Find the peak current in the diode.
(e) Find the PIV of the diode.
3.73 Using the exponential diode characteristic, show that
for v and v both greater than zero, the circuit of Fig. 3.25(a)
s 0
has the transfer characteristic
v = v- v ( a t ! = 1 mA) -nV
0 s D fl
where v and v are in volts and R is in kilohms.
s 0
3 . 7 4 Consider a half-wave rectifier circuit with a triangular.,
z wave input of 5-V peak-to-peak amplitude and zero average
and with R = 1 kQ. Assume that the diode can be represented
ZQ by the piecewise-linear model with V = 0.65 V and r = 20 Q
m D
L Find the average value of v . 0
3 . 7 5 For a half-wave rectifier circuit with R = 1 kQ, utiliz­
ing a diode whose voltage drop is 0.7 V at a current of 1 mA
and exhibiting a 0.1-V change per decade of current variation,
find the values of the input voltage to the rectifier correspond­
ing to v = 0.1 V, 0.5 V, 1 V, 2 V, 5 V, and 10 V. Plot the
0
3 . 7 6 A half-wave rectifier circuit with a 1-kQ load oper­
ates from a 120-V (rms) 60-Hz household supply through a
10-to-f step-down transformer. It uses a silicon diode that
can'be modeled to have a 0.7-V drop for any current. What
is the peak voltage of the rectified output? For what
fraction of the cycle does the diode conduct? What is the
average output voltage? What is the average current in the
load?
z » 0 3 . 8 7 Repeat Problem 3.86 for the case in which the
, 3 . 7 7 A full-wave rectifier circuit with a 1-kQ load operates
from a 120-V (rms) 60-Hz household supply through a 5-to-l
transformer having a center-tapped secondary winding. It
uses two silicon diodes that can be modeled to have a 0.7-V
drop for all currents. What is the peak voltage of the rectified
0
output? For what fraction of a cycle does each diode conduct?
What is the average output voltage? What is the average
current in the load?
0 the diode has a 0.7-V drop when conducting. Let the load
3 . 7 8 A full-wave bridge rectifier circuit with a 1-kQ load
operates from a 120-V (rms) 60-Hz household supply
through a 10-to-l step-down transformer having a single sec­
ondary winding. It uses four diodes, each of which can be
modeled to have a 0.7-V drop for any current. What is the
peak value of the rectified voltage across the load? For what
fraction of a cycle does each diode conduct? What is the
average voltage across the load? What is the average current
through the load?
0 3 . 7 9 It is required to design a full-wave rectifier circuit
using the circuit of Fig. 3.26 to provide an average output
(a) 10 V
(b) 100 V
In each case find the required turns ratio of the transformer.
Assume that a conducting diode has a voltage drop of 0.7 V.
The ac line voltage is 120 V rms.
In (v /R)
T 0
D 3 . 8 0 Repeat Problem 3.79 for the bridge rectifier circuit
of Fig. 3.27.
D3.81 Consider the full-wave rectifier in Fig. 3.26 when
the transformer turns ratio is such that the voltage across the
entire secondary winding is 24 V rms. If the input ac line
voltage (120 V rms) fluctuates by as much as ±10%, find the
required PIV of the diodes. (Remember to use a factor of
safety in your design.)
* 3 . 8 2 The circuit in Fig. P3.82 implements a complementary-
output rectifier. Sketch and clearly label the waveforms of
+
v and v' . Assume a 0.7-V drop across each conducting
0 0
diode. If the magnitude of the average of each output is to
be 15 V, find the required amplitude of the sine wave across
the entire secondary winding. What is the PIV of each
diode?
3.83 Augment the rectifier circuit of Problem 3.76 with a
capacitor chosen to provide a peak-to-peak ripple voltage of
(i) 10% of the peak output and (ii) 1% of the peak output. In
each case:
(a) What average output voltage results?
(b) What fraction of the cycle does the diode conduct?
(c) What is the average diode current?
(d) What is the peak diode current?
3 . 8 4 Repeat Problem 3.83 for the rectifier in Problem 3.77.
3.85 Repeat Problem 3.83 for the rectifier in Problem 3.78.
* D 3 . 8 6 It is required to use a peak rectifier to design a dc
power supply that provides an average dc output voltage of
15 V on which a maximum of +1-V ripple is allowed. The
rectifier feeds a load of 150 Q. The rectifier is fed from the line
voltage (120 V rms, 60 Hz) through a transformer. The diodes
available have 0.7-V drop when conducting. If the designer
opts for the half-wave circuit:
(a) Specify the rms voltage that must appear across the trans­
former secondary.
(b) Find the required value of the filter capacitor.
(c) Find the maximum reverse voltage that will appear across
the diode, and specify the PIV rating of the diode.
(d) Calculate the average current through the diode during
conduction.
(e) Calculate the peak diode current.
designer opts for a full-wave circuit utilizing a center-tapped
transformer.
* D 3 . 8 8 Repeat Problem 3.86 for the case in which the
designer opts for a full-wave bridge rectifier circuit.
» 3 . 8 9 Consider a half-wave peak rectifier fed with a volt­
age v having a triangular waveform with 20-V peak-to-peak
s
amplitude, zero average, and 1-kHz frequency. Assume that
resistance R = 100 Q and the filter capacitor C = 100 Find
the average dc output voltage, the time interval during which
the diode conducts, the average diode current during conduc­
tion, and the maximum diode current.
* D 3 . 9 0 Consider the circuit in Fig. P3.82 with two equal
filter capacitors placed across the load resistors R. Assume
that the diodes available exhibit a 0.7-V drop when conduct­
ing. Design the circuit to provide +15-V dc output voltages
with a peak-to-peak ripple no greater than 1 V. Each supply
should be capable of providing 200 mA dc current to its
load resistor R. Completely specify the capacitors, diodes
and the transformer.
3 . 9 1 The op amp in the precision rectifier circuit of Fig. P3.91
is ideal with output saturation levels of ±12 V. Assume that
when conducting the diode exhibits a constant voltage drop
of 0.7 V. Find v , and v for:
Q A
(a) = +1Y
V l
(b) v, = +2Y
(c) v, = -lV
(d) v, = -2V
 21 3
1
CHAPTER 3 DIODES PROBLEMS : M

Also, find the average output voltage obtained when v, is a

+2V voltage (8.2 V) is measured at a current of 10 mA and For inputs over the range of ±5 V, provide a calibrated sketch
symmetrical square wave of 1-kHz frequency, 5-V amplitude,
61 2 < 0 r e r e s e n t t n e z e n e r b y a i e c e w i s e l m of the voltages at outputs B and C. For a 5-V peak, 100-Hz
and zero average. ^at '' = ^' P P " ear
sinusoid applied at A, sketch the signals at nodes B and C.
model.

AAA -o v
o v 0
V[ o-
0
5 kfi
ikn A o—WV
(a)

+2V

FIGURE P3.91
lkfi
FIGURE P 3 . 9 7 FIGURE P 3 . 1 0 2
3 . 9 2 The op amp in the circuit of Fig. P3.92 is ideal with (b)
output saturation levels of ±12 V. The diodes exhibit a con­ * 3 . 9 8 Plot the transfer characteristic of the circuit in * * 3 . 1 0 3 Sketch and label the transfer characteristic of
stant 0.7-V drop when conducting. Find v_, v , and v for:
A 0 Fig.P3-98 by evaluating v, corresponding to v = 0.5 V, c
the circuit shown in Fig. P3.103 over a +10-V range of input
1 kfi 0.6 V, 0.7 V, 0.8 V, 0 V, - 0 . 5 V, - 0 . 6 V, - 0 . 7 V, and - 0 . 8 V. signals. All diodes are 1-mA units (i.e., each exhibits a 0.7-V
(a) v, = +lV v,o- Wv -o v drop at a current of 1 mA) with n=l. What are the slopes of
0
Assume that the diodes are 1-mA units (i.e., have 0.7-V drops
(b) v,= +2V
at 1-mA currents) having a 0.1-V/decade logarithmic charac­ the characteristic at the extreme ±10-V levels?
(c) i* = -lV
teristic. Characterize the circuit as a hard or soft limiter. What
(d) », = -2V
is the value of 7T? Estimate L+ and L_.
+ 1V
-2 V l kn A
(c) Vj o- - w v —

•lkfi

V) o
VjO-
lkfi
AAA -o vn
I I 3kfi
ZSD,

FIGURE P 3 . 9 8 H/ o- V v V -ov0

D 3 . 9 9 Design limiter circuits using only diodes and 10-kfi S O ,

FIGURE P3.92
SECTION 3 . 6 : LIMITING AND CLAMPING
CIRCUITS
3 . 9 3 Sketch the transfer characteristic v versus v, for the
0
limiter circuits shown in Fig. P3.93. All diodes begin con­
ducting at a forward voltage drop of 0.5 V and have voltage
drops of 0.7 V when fully conducting.
3 . 9 4 Repeat Problem 3.93 assuming that the diodes are
modeled with the piecewise-linear model with V = 0.65 V
D0
and r = 20 fi.
D
3 . 9 5 The circuits in Fig. P3.93(a) and (d) are connected as
follows: The two input terminals are tied together, and the
-2V
(d)
FIGURE P3.93
two output terminals are tied together. Sketch the transfer
characteristic of the circuit resulting, assuming that the cut-in
voltage of the diodes is 0.5 V and their voltage drop when
fully conducting is 0.7 V.
3 . 9 6 Repeat Problem 3.95 for the two circuits in Fig. P3.93(a)
and (b) connected together as follows: The two input terminals
are tied together, and the two output terminals are tied together.
*3.97 Sketch and clearly label the transfer characteristic of
the circuit in Fig. P3.97 for - 2 0 V < v, < +20 V. Assume that
the diodes can be represented by a piecewise-linear model
with V = 0.65 V and r = 20 fi. Assuming that the specified
m D
resistors to provide an output signal limited to the range:
(a) - 0 . 7 V and above
(b) - 2 . 1 V and above
'lkfi
(c) + 1 . 4 V
Assume that each diode has a 0.7-V drop when conducting.
t Y
D 3 . 1 0 0 Design a two-sided limiting circuit using a resistor, -2V
two diodes, and two power supplies to feed a 1-kfi load with
nominal limiting levels of ± 3 V. Use diodes modeled by a FIGURE P 3 . 1 0 3
constant 0.7 V. In the nonlimiting region, the circuit voltage
gain should be at least 0.95 V/V. 3 . 1 0 4 A clamped capacitor using an ideal diode with cath­
ode grounded is supplied with a sine wave of 10-V rms. What
* 3 . 1 0 1 Reconsider Problem 3.100 with diodes modeled by a
is the average (dc) value of the resulting output?
0.5-V offset and a resistor consistent with 10-mA conduction
at 0.7 V. Sketch and quantify the output voltage for inputs of
* * 3 . 1 0 5 For the circuits in Fig. P3.105, each utilizing an
±10 V.
ideal diode (or diodes), sketch the output for the input shown.
* 3 . 1 0 2 In the circuit shown in Fig. P3.102, the diodes ex­ Label the most positive and most negative output levels.
hibit a 0.7-V drop at 0.1 mA with a 0.1 V/decade characteristic. Assume CR > T.
 232 . CHAPTER 3 DIODES
PROBLEMS 233

over and above the concentrationp . If N = 10 / c m , n = n0 D

1 J
t extent in each of the p and n regions when the junction is
10 3
\ 5 x 10 /cm , and W = 5 pm, find the density of the current reverse biased with V = 5 V. At this value of reverse bias,
R

that will flow in the x direction. calculate the magnitude of the charge stored on either side
1
of the junction. Assume the junction area is 400 pm . Also,
3 . 1 0 9 Contrast the electron and hole drift velocities calculate Cj.
through a 10-/xm layer of intrinsic silicon across which a
voltage of 5 V is imposed. Let p = 1350 cm /V-s and p = n
2
p
3 . 1 1 6 Estimate the total charge stored in a 0.1-^m deple­
480 cm /V-s. 2
tion layer on one side of a 10-pm x 10-,um junction. The dop­
16 3
ing concentration on that side of the junction is 1 0 / c m .
3 . 1 1 0 Find the current flow in a silicon bar of 10-^im
length having a 5-pm x A-pm cross-section and having free- 3 . 1 1 7 Combine Eqs. (3.51) and (3.52) to f i n d q i n terms of }

electron and hole densities of 10 /cm and 1 0 / c m , respec­ 5 3 15 3

V . Differentiate this expression to find an expression for the
R

tively, with 1 V applied end-to-end. Use p = 1200 c m ' / V s n

junction capacitance C,-. Show that the expression you found
and p : 5 0 0 c n r 7 V - s .
: is the same as the result obtained using Eq. (3.54) in conjunc­
p

tion with Eq. (3.52).

3 . 1 1 1 In a 10-pm long bar of donor-doped silicon, what
donor concentration is needed to realize a current density of 3 . 1 1 8 For a particular junction for which C = 0.6 pF, V = j0 0

2
1 mA/pm in response to an applied voltage of 1 V. (Note: 0.75 V, and m= 1 / 3 , find the capacitance at reverse-bias
Although the carrier mobilities change with doping concen­ voltages of 1 V and 10 V.
tration [see the table associated with Problem 3.113], as a first
C approximation you may assume p to be constant and use the 3 . 1 1 9 An avalanche-breakdown diode, for which the
n

value for intrinsic silicon, 1350 cm /V-s.) 2 breakdown voltage is 12 V, has a rated power dissipation of
v, o 0.25 W. What continuous operating current will raise the dis­
3 . 1 1 2 In a phosphorous-doped silicon layer with impurity sipation to half the maximum value? If breakdown occurs for
16 3
concentration of 1 0 / c m , find the hole and electron concen­ only 10 ms in every 20 ms, what average breakdown current
tration at 25°C and 125°C. is allowed?

3 . 1 1 3 Both the carrier mobility and diffusivity decrease as 3.12® In a forward-biased pn junction show that the ratio
the doping concentration of silicon is increased. The follow­ of the current component due to hole injection across the
ing table provides a few data points for p and p versus n p junction to the component due to electron injection is given by
(e) (f) doping concentration. Use the Einstein relationship to obtain
FIGURE P 3 . 1 0 5 the corresponding value for D and D . n p

LN P D

SECTION 3 . 7 : PHYSICAL OPERATION Find the resistance in each case. For intrinsic silicon, use the Doping Evaluate this ratio for the case N = 10 / c m , N = 1 0 / c m ,
A
8 3
n
16 3

OF DIODES data in Table 3.2. For doped silicon, assume p = 2.5p = Concen­ u„
n
Pn 0 P L = 5 pm, L = 10 pm, D = 10 cm /s, D = 20 cm /s, and
p n p n
2
1200 c m / V - s . (Recall that R = pL/A.) " tration cm /Vs2 2
cm /V cm /s 2

Note: If in the following problems the need arises for the val­ hence find I and /„ for the case in which the diode is conduct­
p

ues of particular parameters or physical constants that are not 3 . 1 0 8 Holes are being steadily injected into a region of ing a forward current 1=1 mA.
Intrinsic 1350 480
stated, please consult Table 3.1. M-type silicon (connected to other devices, the details of 16
10 1100 400
which are not important for this question). In the steady state, 17
3 . 1 2 1 A p -n diode is one in which the doping concentra­
+

10 700 260
3 . 1 0 6 Find values of the intrinsic carrier concentration tion in the p region is much greater than that in the n region.
the excess-hole concentration profile shown in Fig. P3.108 is 10 18
360 150
for silicon at - 7 0 ° C , 0°C, 20°C, 100°C, and 125°C. At each In such a diode, the forward current is mostly due to hole
established in the n-type silicon region. Here "excess" means
temperature, what fraction of the atoms is ionized? Recall injection across the junction. Show that
2 2 3
that a silicon crystal has approximately 5 x 1 0 atoms/cm .
3 . 1 1 4 Calculate the built-in voltage of a junction in which
DP
= Aqn (e 1)
16 3
the p and n regions are doped equally with 1 0 atoms/cm . h t
3 . 1 0 7 A young designer, aiming to develop intuition con­ 10 3 LN
cerning conducting paths within an integrated circuit, exam­ Assume n, = 1 0 / c m . With no external voltage applied, P D

ines the end-to-end resistance of a connecting bar 10 pirn what is the width of the depletion region, and how far does it For the specific case in which N 5 x lO^/cnri, D =
D p

long, 3 pm wide, and 1 pm thick, made of various materials. extend into the p and n regions? If the cross-sectional area of 10 cm„2/„
z
p
_ N 1
/s, i„ = „„a
0.1 ps, and - 1 R\4 ,
Aa = 4 2
10 pm , find I and the voltage s

The designer considers: the junction is 100 pm , find the magnitude of the charge V obtained when I = 0.2 mA. Assume operation at 300 K
stored on either side of the junction, and calculate the junc­ where = 1.5 x 10 7 c m . Also, calculate the excess minority-
(a) intrinsic silicon tion capacitance Cj. carrier charge and the value of the diffusion capacitance at
16 3
(b) n-doped silicon with N = 1 0 / c m
D / = 0.2 mA.
(c) ;7-doped silicon with N = 1 0 / c m
D
i8 3
3 . 1 1 5 If, for a particular junction, the acceptor concen­
10 3 0 W 16 3
tration is 1 0 / c m and the donor concentration is 1 0 / c m , 15 3
* * 3 . 1 2 2 A short-base diode is one where the widths of the
(d) p-doped silicon with N = 1 0 / c m
A

(e) aluminum with resistivity of 2.8 pQ • cm find the junction built-in voltage. Assume n = 1 0 / c m . t
10 3
p and n regions are much smaller than L and L , respectively. n p
FIGURE P 3 . 1 0 8
Also, find the width of the depletion region (W ) and its dep
As a result, the excess minority-carrier distribution in each
 2 3 4 „ , CHAPTER 3 DIODES

region is a straight line rather than the exponentials shown in

Fig. 3.50. (c) Also, assuming Q = Q,
p / = s h o w t h a t

(a) For the short-base diode, sketch a figure corresponding to Cd = ^ /

Fig. 3.50, and assume, as in Fig. 3.50, that N > N . A D VT

(b) Following a derivation similar to that given on page 2 0 5 - where

206, show that if the widths of the p and n regions are
denoted W and W then
p n
1 W
2 D„
D„ D„ v/v
Aqn\ T
T

{W ~x )N (W.-xJN, (e ~l)
n n D
(d) If a designer wishes to limit Q to 8 pF at / = 1 mA what
and 2
should W be? Assume D. = 10 cm /s.
B

O _ 1 <W -x f
n n

U p 7
2 D "

1 W
F O R W
MOS Field-Effect
• 2 jftp' „ > x

Transistors (MOSFETs)
n

Introduction 235 4.8 T h e M O S F E T Internal

Capacitances and High-
4.1 Device Structure and Physical
Frequency Model 320
Operation 236
4.9 Frequency Response of
4.2 Current-Voltage
the C S Amplifier 326
Characteristics 248
4 . 1 0 T h e C M O S Digital L o g i c
4.3 M O S F E T C i r c u i t s at D C 262
Inverter 336
4.4 The M O S F E T as an Amplifier
4.11 The Depletion-Type
and as a Switch 270
MOSFET 346
4.5 B i a s i n g in M O S A m p l i f i e r
4.12 The S P I C E M O S F E T Model
Circuits 280
and Simulation Example 351
4.6 Small-Signal Operation and
Summary 359
Models 287
Problems 360
4.7 Single-Stage MOS
Amplifiers 299

INTRODUCTION
H a v i n g studied t h e j u n c t i o n diode, w h i c h is the m o s t basic t w o - t e r m i n a l s e m i c o n d u c t o r
device, w e n o w turn our attention to three-terminal s e m i c o n d u c t o r devices. Three-terminal
devices are far m o r e useful t h a n t w o - t e r m i n a l ones b e c a u s e they can b e u s e d in a m u l t i t u d e
of applications, r a n g i n g from signal amplification to digital logic and m e m o r y . T h e basic
principle i n v o l v e d is t h e u s e of the voltage b e t w e e n t w o terminals to control the current
flowing in t h e third terminal. In this w a y a three-terminal device can b e u s e d to realize a
controlled source, w h i c h as w e h a v e learned in C h a p t e r 1 is the basis for amplifier design.
Also, in the e x t r e m e , the control signal can b e u s e d to c a u s e t h e current in t h e third terminal
to change from z e r o to a large value, thus a l l o w i n g the device to act as a switch. A s w e also

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