LAB REPORTS

Course number: 119505

Group: SEM

Submitted by: Dam Thi Minh Nguyet

Student’s ID: 20175016

Submitted to: Ths. Nguyen Thi Tuyet Mai

Date of submission: Oct 15th,2020

Introduction

A semiconductor diode is a structural component consists of two semiconductors P and N

contacted together. P-type semiconductors have electromechanically carriers the village is a
‘’planting hole’’, while type N has an electric carrier are basically ‘’electron’’.

When the two p-n semiconductors are joined together, there is whole diffusion and electrons
through the junction, holes from p to n, electrons from n to p. This diffusion gives rise to a
double charged layer adjacent to the two sides of the junction, forming a junction electric field
Etx directed from semiconductor n to semiconductor p. This electric field will prevent carrier
movement through the junction.

This electric field will prevent carrier movement through the junction. If semiconductor p is
connected to the anode and semiconductor n to the cathode of a source U, then on the contact
surface there is a forward electric field E0 pulling the holes and electrons closer, resulting in a
reduced contact layer width go to facilitate the forward current It flow through the diode. When
increasing the voltage U of the power source, i.e. increasing the magnitude of the electric field
E0, the current It also increase very quickly.

One of the properties of the diode is the rectifier property. In the experiment, we will investigate
the rectifying properties of the diode by drawing a volt-aerometric line of this device.

Experimental Procedure

1. Apparatus
- Experimental circuit board with integrated source and measure (Figure 1).
- Components diode
- Resistors 820Ω and 100kΩ
- Wire connection
 Figure 1. Laboratory equipment
2. Prepare the experiment
- Step 1: Set up the circuit according to Figure 2
- Step 2: Turn the knob above A2 to 10mA scale. Valuable one the smallest division of the
corresponding group with this scale of A2.
- Step 3: Turn the knob above V to the scale of 1V. Determine the value of one degree the
smallest division of the corresponding measurement unit this scale of V.

Figure 2. Measuring circuit surveying the polarization characteristics of the diode

3. Measuring sequence
- Step 1: Connect the power meter to the 220V power outlet and press the K switch to
energize the device.
- Step 2: Preliminary investigation of the measurement process by slowly turning the
power knob U2 while observing clock A2. Note some definite value on V from which the
hand of clock A2 begins to indicate a nonzero current. Then, return U2 to 0.
- Step 3: Record the initial values of U and It. Turn U2 slowly up in 0.1V increments, and
record the corresponding value of It on clock A2 in table 1.
- Step 4: Starting from the U value at which the needle of A22 begins to move (which has
been preliminary investigated in step 2), slowly increase the value of U2 with a step of
0.2V or 0.04V, until observed clock A2's needle reaches its full scale value. Record the
corresponding value of It on clock A2 in table 1.
- Step 5: Return U2 to the 0 position, press switch K to turn off the power of the device.

Results

The results obtained are summarized in Table 1. This data is presented graphically in Figure
3.

Table 1. Data tables

Um = 1-10V ðV = 1.5%
It = 1-10mA ðA1 = 1.5%
In= 100µA ðA2 = 1.5 %
U(V) 0 0.1 0.2 0.3 0.4 0.5 0.52 0.54 0.56 0.58 0.6 0.62 0.64 0.66 0.68
I(mA) 0 0 0 0.02 0.04 0.3 0.42 0.58 0.82 1 1.4 1.8 2.4 2.8 3.6

Figure 3. Voltage-ampere characteristic graph of diode

Discussion