MACDOWEL

GE 108

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REPORT
ELECTRONICS
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2019EEB1170

 EXPERIMENT - 2

P N JUNCTION DIODE
AIM :
1) To explain the structure and function of a P N junction diode and
plotting the V I graphs for both biasing & observing the change.
2) To explain the forward and reverse biased characteristics of Silicon
diode and Germanium diode and plotting their V I graphs.

THEORY :
• Structure of P N junction diode :
The diode is a device basically formed from a junction of n-type and p-
type semiconductor material. The lead connected to the p-type material is
called the anode and the lead connected to the n-type material is the
cathode. The cathode of a diode is marked by a solid line on the diode, as
depicted in the igure.

Fig 1 : P N junction diode representation

A PN Junction Diode is one of the simplest semiconductor devices, which

has the characteristic of passing current in only one direction only.

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 However, unlike a resistor, a diode does not behave linearly with respect
to the applied voltage as the diode has an exponential current-voltage ( I
V ) relationship and therefore we can not described its operation by
simply using an equation such as Ohm’s law. The p-n junction diode is
made from the semiconductor materials such as silicon, germanium, and
gallium arsenide.

• Function of P N junction diode :

1. In Forward biased : In forward bias, he positive terminal of battery is
connected to the P side (or anode) and the negative terminal of
battery is connected to the N side(or cathode) of a diode.( If this
external voltage becomes greater than the value of the potential
barrier, approx. 0.7 volts for silicon and 0.3 volts for germanium, the
potential barriers opposition will be overcome and current will start to
low). The holes in the p-type region and the electrons in the n-type
region are pushed toward the junction and they start neutralising the
depletion zone and thereby reducing its width. Therefore the change
in potential between the p-side and n-side decreases and with the
increase in the forward bias voltage, the depletion zone ultimately
becomes so thin that the zone’s electric ield becomes weak to
counteract the charge carrier motion across the p–n junction (or the
potential barrier is lowered), thereby reducing the electrical resistance
and the diode conducts the current. It is therefore acts as a short
circuit in forward bias. The point at which this sudden increase in
current takes place is represented on the static I V characteristics
curve above as the “knee” point.

Fig 2 : P N junction diode in forward biased.

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 Fig 3 : Forward characteristics curve for p-n junction diode

2. In Reverse biased : A P N junction diode is said to be reverse biased

when the positive terminal of a cell or battery is connected to the n-
side of the junction and the negative terminal to the p-side. The
positive voltage applied to the N-type material attracts electrons
towards the positive electrode and away from the junction, while the
holes in the P-type end are also attracted away from the junction
towards the negative electrode. The net result is that the depletion
layer grows wider due to a lack of electrons and holes and presents a
high impedance path, almost an insulator and a high potential barrier
is created across the junction thus preventing current from lowing
through the
semiconductor
material. Thus, in
reverse biased,
the diode is said
to be in an open
circuit and acts
as an open
switch.
Fig 4 : P N junction diode under reverse biased.

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 Also, if the reverse bias voltage Vr applied to the diode is increased to a
su iciently high enough value, it will cause the diode’s PN junction to
overheat and fail due to the avalanche e ect around the junction. This
may cause the diode to become shorted and will result in the low of
maximum circuit current, and this shown as a step downward slope in the
reverse static characteristics curve below :

Fig 5 : Reverse characteristics curve for P N junction diode.

Fig 6 : Static I V characteristics of p-n junction diode.

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• Silicon Diode : In forward biased, the diode will conduct because the
forward biasing will decrease the depletion region width and overcome
the barrier potential. In order to conduct, the forward biasing voltage
should be greater than the barrier potential. Silicon diode acts like a
closed switch in forward biasing with a potential drop of approx. 0.7
Volts across it.

• Germanium Diode : In forward biased, it will also conduct similar to the

silicon diode but in this case the voltage drop across it is 0.3 Volts and
the germanium diode will start conducting when the forward biased
voltage exceeds 0.3 volts.

• Both the diodes ( Silicon & Germanium ) do not conduct electricity,

since reverse biasing leads to an increase in the depletion region width;
hence current carrier charges ind it more di icult to overcome the
barrier potential. The diodes will act like an open switch.

PROCEDURE :
1) FORWARD BIASED :
1. Set DC voltage to 0.2 V .
2. Select the diode ( Silicon or Germanium)
3. Now choose the resistance of the resistor.(1 kilo ohms for germanium).
4. Voltmeter is placed parallel to Silicon/germanium diode and ammeter
in series with resistor.
5. The positive side of battery to the P side(anode) and the negative of
battery to the N side(cathode) of the diode.
6. Now, we vary the voltage upto (5V in Silicon, 30V inGermanium )and
note the Voltmeter and Ammeter reading for particular DC voltage .
7. Take the readings and note Voltmeter reading across Silicon/
germanium diode and Ammeter reading.
8. Plot the V I graph and observe the change.

2) REVERSE BIASED :
1. Set DC voltage to 0.2 V .
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 2. Select the diode ( Silicon or germanium ).

3. Set the resistor.
4. Voltmeter is placed parallel to Silicon/germanium diode and
ammeter in series with resistor.
5. The positive terminal of battery is connected to the N side(cathode)
and the negative terminal of battery is connected to the P
side(anode) of the diode.
6. Now vary the voltage upto 30V and note the Voltmeter and
Ammeter reading for DC voltage .
7. Take the readings and note Voltmeter reading across Silicon/
germanium diode and Ammeter reading.
8. Plot the V I graph and observe the change.

OBSERVATIONS :
EXPERIMENTAL TABLES & GRAPHS :
• Forward bias - Silicon diode :
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 Graph : V I Plot - Forward bias- Si diode

Here we observe that the Silicon diode starts conducting when the
forward bias voltage exceeds around 0.6 volts. This voltage is known as
cut-in voltage. Also, the dynamic resistance of the diode is given as :
rd=ΔV/ΔI .

• Reverse bias - Silicon diode :

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 Graph : V I characteristics for reverse bias : Silicon diode

Here, practically zero current lows through the junction diode with an
increase in bias voltage, but there is a presence of a small leakage
current, in micro amperes. The sharp downward slope signi ies the
reverse breakdown region.

• Forward bias - Germanium diode :

Graph : V I Plot - Forward bias- Si diode

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 Here, the cut-in voltage can be observed from the V I plot and it is 0.3
Volts (Germanium diode).

• Reverse bias - Germanium diode :

Graph : V I characteristics for reverse bias : Germanium diode

Here in case of germanium diode also, we can see the reverse breakdown
region or the avalanche region when we apply reverse voltage = 30 V
approx. through the sharp downward slope.
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ASSIGNMENT SOLUTIONS